TW200735187A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
TW200735187A
TW200735187A TW095116015A TW95116015A TW200735187A TW 200735187 A TW200735187 A TW 200735187A TW 095116015 A TW095116015 A TW 095116015A TW 95116015 A TW95116015 A TW 95116015A TW 200735187 A TW200735187 A TW 200735187A
Authority
TW
Taiwan
Prior art keywords
diffusion layer
type diffusion
semiconductor device
transistor
back gate
Prior art date
Application number
TW095116015A
Other languages
English (en)
Other versions
TWI297913B (zh
Inventor
Seiji Otake
Ryo Kanda
Shuichi Kikuchi
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200735187A publication Critical patent/TW200735187A/zh
Application granted granted Critical
Publication of TWI297913B publication Critical patent/TWI297913B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/0865—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/0869—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
TW095116015A 2005-08-31 2006-05-05 Semiconductor device and manufacturing method thereof TW200735187A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005250499A JP4979212B2 (ja) 2005-08-31 2005-08-31 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200735187A true TW200735187A (en) 2007-09-16
TWI297913B TWI297913B (zh) 2008-06-11

Family

ID=37817714

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116015A TW200735187A (en) 2005-08-31 2006-05-05 Semiconductor device and manufacturing method thereof

Country Status (5)

Country Link
US (1) US7391069B2 (zh)
JP (1) JP4979212B2 (zh)
KR (1) KR100787282B1 (zh)
CN (1) CN1925168A (zh)
TW (1) TW200735187A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8312120B2 (en) * 2006-08-22 2012-11-13 Citrix Systems, Inc. Systems and methods for providing dynamic spillover of virtual servers based on bandwidth
US8493858B2 (en) 2006-08-22 2013-07-23 Citrix Systems, Inc Systems and methods for providing dynamic connection spillover among virtual servers
JP5700649B2 (ja) * 2011-01-24 2015-04-15 旭化成エレクトロニクス株式会社 半導体装置の製造方法
KR101898751B1 (ko) * 2011-03-18 2018-09-13 르네사스 일렉트로닉스 가부시키가이샤 반도체장치 및 그 제조방법
JP6037085B2 (ja) 2014-05-14 2016-11-30 富士電機株式会社 半導体装置および半導体装置の製造方法
CN104658913B (zh) * 2015-02-10 2017-12-05 上海华虹宏力半导体制造有限公司 Nldmos的制造方法
CN109216462A (zh) * 2018-09-04 2019-01-15 深圳市福来过科技有限公司 半导体器件及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994874A (ja) * 1982-11-22 1984-05-31 Nissan Motor Co Ltd Ｍｏｓトランジスタ
JPS60117778A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置及びその製造方法
TW218424B (zh) * 1992-05-21 1994-01-01 Philips Nv
JP3114592B2 (ja) 1995-11-15 2000-12-04 株式会社デンソー 半導体装置およびその製造方法
TW417307B (en) * 1998-09-23 2001-01-01 Koninkl Philips Electronics Nv Semiconductor device
JP2001119019A (ja) 1999-10-19 2001-04-27 Nec Corp 半導体装置およびその製造方法
JP2002026328A (ja) 2000-07-04 2002-01-25 Toshiba Corp 横型半導体装置
JP5183835B2 (ja) * 2000-11-02 2013-04-17 ローム株式会社 半導体装置およびその製造方法
JP2002314065A (ja) * 2001-04-13 2002-10-25 Sanyo Electric Co Ltd Ｍｏｓ半導体装置およびその製造方法
JP2002314066A (ja) * 2001-04-13 2002-10-25 Sanyo Electric Co Ltd Ｍｏｓ半導体装置およびその製造方法
KR100456691B1 (ko) * 2002-03-05 2004-11-10 삼성전자주식회사 이중격리구조를 갖는 반도체 소자 및 그 제조방법
JP2004335633A (ja) * 2003-05-06 2004-11-25 Toshiba Lsi System Support Kk 半導体集積回路
JP2005158952A (ja) * 2003-11-25 2005-06-16 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
TWI297913B (zh) 2008-06-11
CN1925168A (zh) 2007-03-07
KR100787282B1 (ko) 2007-12-20
US20070052016A1 (en) 2007-03-08
US7391069B2 (en) 2008-06-24
JP2007067127A (ja) 2007-03-15
JP4979212B2 (ja) 2012-07-18
KR20070026037A (ko) 2007-03-08

Similar Documents

Publication Publication Date Title
TW200633220A (en) Lateral double-diffused MOS transistor and manufacturing method therefor
TW200735187A (en) Semiconductor device and manufacturing method thereof
TW200620629A (en) Semiconductor device
TW200633137A (en) Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors
WO2010051133A3 (en) Semiconductor devices having faceted silicide contacts, and related fabrication methods
SG137760A1 (en) Method of fabricating a transistor structure
TW200633125A (en) Semiconductor device and method of semiconductor device
JP2009516361A5 (zh)
WO2006039038A3 (en) Method for forming a semiconductor device having a strained channel and a heterojunction source/drain
EP1679743A3 (en) Semiconductor integrated circuit and fabrication process thereof
TW200611409A (en) Lateral semiconductor device using trench structure and method of manufacturing the same
TW200616154A (en) Forming dual metal complementary metal oxide semiconductor integrated circuits
TW200618290A (en) Semiconductor device and manufacturing method thereof
TW200625645A (en) Trench MOSFET and method of manufacturing same
TW200703570A (en) Semionductor device having cell transistor with recess channel structure and method of manufacturing the same
TWI265632B (en) Laterally double-diffused metal oxide semiconductor transistor and fabricating method the same
TW200620539A (en) BiCMOS compatible JFET device and method of manufacturing same
TW200731509A (en) Semiconductor device and manufacturing method thereof
WO2007072655A3 (en) Lateral soi semiconductor devices and manufacturing method thereof
US9553150B2 (en) Transistor design
WO2007072405A3 (en) Semiconductor device with recessed field plate and method of manufacturing the same
TW200802849A (en) Semiconductor device and manufacturing method of the same
TW200636868A (en) Manufacturing method of semiconductor device
EP2050128A4 (en) HIGH ITS STRUCTURE AND SUPERDAMASCENE TECHNIQUE FOR ENHANCED NMOSFET PERFORMANCE WITH INCORPORATED SILICON CARBON
TW200723410A (en) Method for manufacturing semiconductor device capable of improving breakdown voltage characteristics

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees