TW200731421A - Self-aligned trench MOSFET structure and method of manufacture - Google Patents

Self-aligned trench MOSFET structure and method of manufacture

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Publication number
TW200731421A
TW200731421A TW095147163A TW95147163A TW200731421A TW 200731421 A TW200731421 A TW 200731421A TW 095147163 A TW095147163 A TW 095147163A TW 95147163 A TW95147163 A TW 95147163A TW 200731421 A TW200731421 A TW 200731421A
Authority
TW
Taiwan
Prior art keywords
region
active
termination
regions
body region
Prior art date
Application number
TW095147163A
Other languages
English (en)
Other versions
TWI411046B (zh
Inventor
Christopher Boguslaw Kocon
Nathan Lawrence Kraft
Original Assignee
Fairchild Semiconductor
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Publication date
Application filed by Fairchild Semiconductor filed Critical Fairchild Semiconductor
Publication of TW200731421A publication Critical patent/TW200731421A/zh
Application granted granted Critical
Publication of TWI411046B publication Critical patent/TWI411046B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
TW095147163A 2006-01-25 2006-12-15 自我校準之溝槽式金屬氧化物半導體場效電晶體（ｍｏｓｆｅｔ）結構及其製造方法 TWI411046B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/339,998 US7452777B2 (en) 2006-01-25 2006-01-25 Self-aligned trench MOSFET structure and method of manufacture

Publications (2)

Publication Number Publication Date
TW200731421A true TW200731421A (en) 2007-08-16
TWI411046B TWI411046B (zh) 2013-10-01

Family

ID=38286069

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095147163A TWI411046B (zh) 2006-01-25 2006-12-15 自我校準之溝槽式金屬氧化物半導體場效電晶體（ｍｏｓｆｅｔ）結構及其製造方法

Country Status (9)

Country Link
US (1) US7452777B2 (zh)
JP (1) JP2009524931A (zh)
KR (1) KR101399707B1 (zh)
CN (1) CN101371343B (zh)
AT (1) AT505498A2 (zh)
DE (1) DE112006003705T5 (zh)
MY (1) MY146754A (zh)
TW (1) TWI411046B (zh)
WO (1) WO2007114863A2 (zh)

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US7659588B2 (en) * 2006-01-26 2010-02-09 Siliconix Technology C. V. Termination for a superjunction device
US7632733B2 (en) * 2006-04-29 2009-12-15 Alpha & Omega Semiconductor, Inc. Polysilicon control etch-back indicator
US7948033B2 (en) * 2007-02-06 2011-05-24 Semiconductor Components Industries, Llc Semiconductor device having trench edge termination structure
US7951688B2 (en) * 2007-10-01 2011-05-31 Fairchild Semiconductor Corporation Method and structure for dividing a substrate into individual devices
US20090096027A1 (en) * 2007-10-10 2009-04-16 Franz Hirler Power Semiconductor Device
KR100988776B1 (ko) * 2007-12-27 2010-10-20 주식회사 동부하이텍 리세스드 게이트 트랜지스터의 제조 방법
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
JP5407390B2 (ja) * 2009-02-09 2014-02-05 トヨタ自動車株式会社 半導体装置
US8072027B2 (en) * 2009-06-08 2011-12-06 Fairchild Semiconductor Corporation 3D channel architecture for semiconductor devices
JP2011124464A (ja) * 2009-12-14 2011-06-23 Toshiba Corp 半導体装置及びその製造方法
US20110198689A1 (en) * 2010-02-17 2011-08-18 Suku Kim Semiconductor devices containing trench mosfets with superjunctions
WO2011117920A1 (ja) * 2010-03-24 2011-09-29 パナソニック株式会社 半導体装置およびその製造方法
JP5601863B2 (ja) * 2010-03-29 2014-10-08 三菱電機株式会社 電力半導体装置
US20120018800A1 (en) * 2010-07-22 2012-01-26 Suku Kim Trench Superjunction MOSFET with Thin EPI Process
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) * 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8466513B2 (en) 2011-06-13 2013-06-18 Semiconductor Components Industries, Llc Semiconductor device with enhanced mobility and method
CN103426738B (zh) 2012-05-17 2018-05-18 恩智浦美国有限公司 具有边缘端部结构的沟槽半导体器件及其制造方法
TWI497719B (zh) * 2012-06-08 2015-08-21 Super Group Semiconductor Co Ltd 溝槽式功率半導體結構之製造方法
US8778764B2 (en) 2012-07-16 2014-07-15 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device having a shield electrode structure and structure therefor
JP2014063852A (ja) * 2012-09-20 2014-04-10 Toshiba Corp 半導体装置及びその製造方法
JP6164636B2 (ja) * 2013-03-05 2017-07-19 ローム株式会社 半導体装置
JP6164604B2 (ja) 2013-03-05 2017-07-19 ローム株式会社 半導体装置
CN103956382A (zh) * 2014-04-16 2014-07-30 常州旺童半导体科技有限公司 一种沟槽功率器件结构及其制造方法
US9269779B2 (en) 2014-07-21 2016-02-23 Semiconductor Components Industries, Llc Insulated gate semiconductor device having a shield electrode structure
CN105489649B (zh) * 2014-09-18 2018-06-15 万国半导体股份有限公司 在沟槽式功率器件中改善终端区低击穿电压的方法
DE102014220056B4 (de) * 2014-10-02 2019-02-14 Infineon Technologies Ag Halbleiterbauelement mit Sensorpotential im aktiven Gebiet
CN105576044B (zh) * 2014-10-16 2019-03-29 北大方正集团有限公司 一种肖特基二极管及其制作方法
KR101654848B1 (ko) * 2015-01-27 2016-09-22 주식회사 화진 전력 모스 소자의 과열을 방지할 수 있는 온도 가변 저항 소자를 포함하는 전자 소자
JP2016164906A (ja) * 2015-03-06 2016-09-08 豊田合成株式会社 半導体装置およびその製造方法ならびに電力変換装置
CN105428396B (zh) * 2015-11-16 2019-06-11 上海华虹宏力半导体制造有限公司 功率器件的终端结构及其制造方法
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Also Published As

Publication number Publication date
TWI411046B (zh) 2013-10-01
KR101399707B1 (ko) 2014-05-26
DE112006003705T5 (de) 2008-11-27
MY146754A (en) 2012-09-14
KR20080096528A (ko) 2008-10-30
US7452777B2 (en) 2008-11-18
WO2007114863A3 (en) 2008-10-30
CN101371343B (zh) 2010-09-01
CN101371343A (zh) 2009-02-18
JP2009524931A (ja) 2009-07-02
AT505498A2 (de) 2009-01-15
WO2007114863A2 (en) 2007-10-11
US20070173021A1 (en) 2007-07-26

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