TW200729406A - Zapping circuit - Google Patents

Zapping circuit

Info

Publication number
TW200729406A
TW200729406A TW096100281A TW96100281A TW200729406A TW 200729406 A TW200729406 A TW 200729406A TW 096100281 A TW096100281 A TW 096100281A TW 96100281 A TW96100281 A TW 96100281A TW 200729406 A TW200729406 A TW 200729406A
Authority
TW
Taiwan
Prior art keywords
zapping
mos transistors
withstand voltage
reduced
resistors
Prior art date
Application number
TW096100281A
Other languages
English (en)
Inventor
Seiji Otake
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200729406A publication Critical patent/TW200729406A/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/93—Two or more transistors are coupled in a Darlington composite transistor configuration, all transistors being of the same type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW096100281A 2006-01-20 2007-01-04 Zapping circuit TW200729406A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006012141A JP2007194458A (ja) 2006-01-20 2006-01-20 ザッピング回路

Publications (1)

Publication Number Publication Date
TW200729406A true TW200729406A (en) 2007-08-01

Family

ID=38285297

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100281A TW200729406A (en) 2006-01-20 2007-01-04 Zapping circuit

Country Status (5)

Country Link
US (1) US20070171589A1 (zh)
JP (1) JP2007194458A (zh)
KR (1) KR20070077066A (zh)
CN (1) CN101005069A (zh)
TW (1) TW200729406A (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2182551A1 (en) * 2008-10-29 2010-05-05 ABB Research Ltd. Connection arrangement for semiconductor power modules
US8186226B2 (en) * 2009-12-09 2012-05-29 Honeywell International Inc. Pressure sensor with on-board compensation
CN102163604B (zh) * 2010-02-23 2012-05-23 上海贝岭股份有限公司 一种电阻修正电路
US8656772B2 (en) 2010-03-22 2014-02-25 Honeywell International Inc. Flow sensor with pressure output signal
US8616065B2 (en) 2010-11-24 2013-12-31 Honeywell International Inc. Pressure sensor
US8695417B2 (en) 2011-01-31 2014-04-15 Honeywell International Inc. Flow sensor with enhanced flow range capability
JP2013211618A (ja) * 2012-03-30 2013-10-10 Nippon Telegr & Teleph Corp <Ntt> 複合トランジスタ
US9003897B2 (en) 2012-05-10 2015-04-14 Honeywell International Inc. Temperature compensated force sensor
US8837252B2 (en) 2012-05-31 2014-09-16 Atmel Corporation Memory decoder circuit
US9052217B2 (en) 2012-11-09 2015-06-09 Honeywell International Inc. Variable scale sensor
US9805964B2 (en) * 2016-03-14 2017-10-31 Applied Materials Israel Ltd. System and method for multi-location zapping
CN108122590B (zh) * 2017-08-07 2023-11-10 鸿秦（北京）科技有限公司 一种能够自行物理销毁的非易失存储芯片
US11443820B2 (en) 2018-01-23 2022-09-13 Microchip Technology Incorporated Memory device, memory address decoder, system, and related method for memory attack detection

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313177A (en) * 1992-04-06 1994-05-17 Motorola, Inc. Method and apparatus for an acoustic wave filter
KR100321169B1 (ko) * 1998-06-30 2002-05-13 박종섭 앤티퓨즈의프로그래밍회로
JP2000133717A (ja) * 1998-10-26 2000-05-12 Mitsubishi Electric Corp 半導体装置
KR100504433B1 (ko) * 1999-01-09 2005-07-29 주식회사 하이닉스반도체 앤티퓨즈를 이용한 메모리소자의 리페어 회로
US6859408B2 (en) * 2002-08-29 2005-02-22 Micron Technology, Inc. Current limiting antifuse programming path
US6710640B1 (en) * 2002-09-19 2004-03-23 Infineon Technologies Ag Active well-bias transistor for programming a fuse
JP4614775B2 (ja) * 2005-01-14 2011-01-19 パナソニック株式会社 電気ヒューズ回路
US7242239B2 (en) * 2005-06-07 2007-07-10 International Business Machines Corporation Programming and determining state of electrical fuse using field effect transistor having multiple conduction states

Also Published As

Publication number Publication date
KR20070077066A (ko) 2007-07-25
CN101005069A (zh) 2007-07-25
US20070171589A1 (en) 2007-07-26
JP2007194458A (ja) 2007-08-02

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