TW200729346A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- TW200729346A TW200729346A TW095139021A TW95139021A TW200729346A TW 200729346 A TW200729346 A TW 200729346A TW 095139021 A TW095139021 A TW 095139021A TW 95139021 A TW95139021 A TW 95139021A TW 200729346 A TW200729346 A TW 200729346A
- Authority
- TW
- Taiwan
- Prior art keywords
- aluminum membrane
- semiconductor device
- processing
- manufacturing semiconductor
- exposed
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 6
- 229910052782 aluminium Inorganic materials 0.000 abstract 6
- 239000012528 membrane Substances 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 2
- 150000001450 anions Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005317704A JP4734090B2 (ja) | 2005-10-31 | 2005-10-31 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200729346A true TW200729346A (en) | 2007-08-01 |
| TWI313034B TWI313034B (enExample) | 2009-08-01 |
Family
ID=38004333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095139021A TW200729346A (en) | 2005-10-31 | 2006-10-23 | Method of manufacturing semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7884027B2 (enExample) |
| JP (1) | JP4734090B2 (enExample) |
| TW (1) | TW200729346A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2149147A1 (en) * | 2007-05-14 | 2010-02-03 | Basf Se | Method for removing etching residues from semiconductor components |
| US8222160B2 (en) * | 2010-11-30 | 2012-07-17 | Kabushiki Kaisha Toshiba | Metal containing sacrifice material and method of damascene wiring formation |
| KR102659176B1 (ko) | 2020-12-28 | 2024-04-23 | 삼성디스플레이 주식회사 | 은 함유 박막의 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시장치의 제조 방법 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7144848B2 (en) * | 1992-07-09 | 2006-12-05 | Ekc Technology, Inc. | Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal |
| JPH0645296A (ja) | 1992-07-24 | 1994-02-18 | Nippon Steel Corp | 半導体装置の洗浄方法 |
| US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| JPH10303197A (ja) | 1997-04-24 | 1998-11-13 | Matsushita Electron Corp | 半導体装置の製造方法 |
| US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| JP4224652B2 (ja) * | 1999-03-08 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離液およびそれを用いたレジストの剥離方法 |
| US6248704B1 (en) * | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
| US6235693B1 (en) * | 1999-07-16 | 2001-05-22 | Ekc Technology, Inc. | Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices |
| JP2001168077A (ja) * | 1999-12-06 | 2001-06-22 | Seiko Epson Corp | サイドウォール除去剤、サイドウォールの除去方法および半導体素子の製造方法 |
| JP2002050607A (ja) * | 2000-08-03 | 2002-02-15 | Kaijo Corp | 基板処理方法 |
| JP4044296B2 (ja) | 2001-03-22 | 2008-02-06 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2003005388A (ja) * | 2001-06-26 | 2003-01-08 | Mitsubishi Gas Chem Co Inc | 半導体素子の製造方法。 |
| US6916772B2 (en) * | 2001-07-13 | 2005-07-12 | Ekc Technology, Inc. | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
| US7252718B2 (en) * | 2002-05-31 | 2007-08-07 | Ekc Technology, Inc. | Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture |
| US20040112409A1 (en) * | 2002-12-16 | 2004-06-17 | Supercritical Sysems, Inc. | Fluoride in supercritical fluid for photoresist and residue removal |
| JP2006054251A (ja) | 2004-08-10 | 2006-02-23 | Toshiba Corp | 半導体装置の製造方法 |
| KR100630737B1 (ko) * | 2005-02-04 | 2006-10-02 | 삼성전자주식회사 | 금속 ｃｍｐ 후 세정액 및 이를 이용한 반도체 소자의금속 배선 형성 방법 |
-
2005
- 2005-10-31 JP JP2005317704A patent/JP4734090B2/ja not_active Expired - Fee Related
-
2006
- 2006-10-23 TW TW095139021A patent/TW200729346A/zh unknown
- 2006-10-31 US US11/589,979 patent/US7884027B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7884027B2 (en) | 2011-02-08 |
| JP4734090B2 (ja) | 2011-07-27 |
| US20070105378A1 (en) | 2007-05-10 |
| JP2007123787A (ja) | 2007-05-17 |
| TWI313034B (enExample) | 2009-08-01 |
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