TW200723548A - A hybrid BULK-SOI 6T-SRAM cell for improved CELL stability and performance - Google Patents

A hybrid BULK-SOI 6T-SRAM cell for improved CELL stability and performance

Info

Publication number
TW200723548A
TW200723548A TW095112004A TW95112004A TW200723548A TW 200723548 A TW200723548 A TW 200723548A TW 095112004 A TW095112004 A TW 095112004A TW 95112004 A TW95112004 A TW 95112004A TW 200723548 A TW200723548 A TW 200723548A
Authority
TW
Taiwan
Prior art keywords
region
bulk
soi
performance
sram
Prior art date
Application number
TW095112004A
Other languages
English (en)
Inventor
Leland Chang
Shreesh Narasimha
Norman J Rohrer
Jeffrey W Sleight
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200723548A publication Critical patent/TW200723548A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
TW095112004A 2005-04-15 2006-04-04 A hybrid BULK-SOI 6T-SRAM cell for improved CELL stability and performance TW200723548A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/108,012 US7274072B2 (en) 2005-04-15 2005-04-15 Hybrid bulk-SOI 6T-SRAM cell for improved cell stability and performance

Publications (1)

Publication Number Publication Date
TW200723548A true TW200723548A (en) 2007-06-16

Family

ID=37107697

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112004A TW200723548A (en) 2005-04-15 2006-04-04 A hybrid BULK-SOI 6T-SRAM cell for improved CELL stability and performance

Country Status (6)

Country Link
US (1) US7274072B2 (zh)
EP (1) EP1875516A4 (zh)
JP (1) JP2008536334A (zh)
CN (1) CN101160667B (zh)
TW (1) TW200723548A (zh)
WO (1) WO2006113061A2 (zh)

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US7087965B2 (en) * 2004-04-22 2006-08-08 International Business Machines Corporation Strained silicon CMOS on hybrid crystal orientations
JP2007158295A (ja) * 2005-11-10 2007-06-21 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP2007234793A (ja) * 2006-02-28 2007-09-13 Seiko Epson Corp 半導体装置及びその製造方法
JP2007251005A (ja) * 2006-03-17 2007-09-27 Toshiba Corp 半導体装置及びその製造方法
DE102006015076B4 (de) * 2006-03-31 2014-03-20 Advanced Micro Devices, Inc. Halbleiterbauelement mit SOI-Transistoren und Vollsubstrattransistoren und ein Verfahren zur Herstellung
US20090026524A1 (en) * 2007-07-27 2009-01-29 Franz Kreupl Stacked Circuits
US7948008B2 (en) 2007-10-26 2011-05-24 Micron Technology, Inc. Floating body field-effect transistors, and methods of forming floating body field-effect transistors
US7985633B2 (en) * 2007-10-30 2011-07-26 International Business Machines Corporation Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistors
US7718496B2 (en) * 2007-10-30 2010-05-18 International Business Machines Corporation Techniques for enabling multiple Vt devices using high-K metal gate stacks
US20090200635A1 (en) * 2008-02-12 2009-08-13 Viktor Koldiaev Integrated Circuit Having Electrical Isolation Regions, Mask Technology and Method of Manufacturing Same
US20100200918A1 (en) * 2009-02-10 2010-08-12 Honeywell International Inc. Heavy Ion Upset Hardened Floating Body SRAM Cells
US8294485B2 (en) 2009-02-12 2012-10-23 International Business Machines Corporation Detecting asymmetrical transistor leakage defects
US8324665B2 (en) * 2009-04-21 2012-12-04 Texas Instruments Incorporated SRAM cell with different crystal orientation than associated logic
US8080456B2 (en) * 2009-05-20 2011-12-20 International Business Machines Corporation Robust top-down silicon nanowire structure using a conformal nitride
US8018007B2 (en) 2009-07-20 2011-09-13 International Business Machines Corporation Selective floating body SRAM cell
US8643107B2 (en) * 2010-01-07 2014-02-04 International Business Machines Corporation Body-tied asymmetric N-type field effect transistor
US8426917B2 (en) * 2010-01-07 2013-04-23 International Business Machines Corporation Body-tied asymmetric P-type field effect transistor
US8299519B2 (en) * 2010-01-11 2012-10-30 International Business Machines Corporation Read transistor for single poly non-volatile memory using body contacted SOI device
US8212294B2 (en) * 2010-01-28 2012-07-03 Raytheon Company Structure having silicon CMOS transistors with column III-V transistors on a common substrate
US8372725B2 (en) * 2010-02-23 2013-02-12 International Business Machines Corporation Structures and methods of forming pre fabricated deep trench capacitors for SOI substrates
CN103295951A (zh) * 2012-02-27 2013-09-11 中国科学院上海微系统与信息技术研究所 基于混合晶向soi的器件系统结构及制备方法
US8822295B2 (en) * 2012-04-03 2014-09-02 International Business Machines Corporation Low extension dose implants in SRAM fabrication
US9041105B2 (en) 2012-07-20 2015-05-26 International Business Machines Corporation Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structure
CN103579191B (zh) * 2012-07-20 2016-06-15 无锡华润上华半导体有限公司 用于测试六管sram的漏电流的半导体测试结构
US8963208B2 (en) * 2012-11-15 2015-02-24 GlobalFoundries, Inc. Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof
JP6178118B2 (ja) * 2013-05-31 2017-08-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10109638B1 (en) * 2017-10-23 2018-10-23 Globalfoundries Singapore Pte. Ltd. Embedded non-volatile memory (NVM) on fully depleted silicon-on-insulator (FD-SOI) substrate
US11749671B2 (en) * 2020-10-09 2023-09-05 Globalfoundries U.S. Inc. Integrated circuit structures with well boundary distal to substrate midpoint and methods to form the same

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KR100539243B1 (ko) * 2003-10-04 2005-12-27 삼성전자주식회사 부분 에스오아이 기판에 구현된 에스램 소자

Also Published As

Publication number Publication date
JP2008536334A (ja) 2008-09-04
EP1875516A4 (en) 2008-08-13
CN101160667B (zh) 2010-06-16
CN101160667A (zh) 2008-04-09
US7274072B2 (en) 2007-09-25
WO2006113061A2 (en) 2006-10-26
US20060231899A1 (en) 2006-10-19
EP1875516A2 (en) 2008-01-09
WO2006113061A3 (en) 2007-05-24

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