TW200721471A - Microelectronic imaging units and methods of manufacturing microelectronic imaging units at the wafer level - Google Patents
Microelectronic imaging units and methods of manufacturing microelectronic imaging units at the wafer levelInfo
- Publication number
- TW200721471A TW200721471A TW095132427A TW95132427A TW200721471A TW 200721471 A TW200721471 A TW 200721471A TW 095132427 A TW095132427 A TW 095132427A TW 95132427 A TW95132427 A TW 95132427A TW 200721471 A TW200721471 A TW 200721471A
- Authority
- TW
- Taiwan
- Prior art keywords
- imaging units
- cover layer
- manufacturing
- microelectronic imaging
- dark current
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000004377 microelectronic Methods 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/217,877 US7452743B2 (en) | 2005-09-01 | 2005-09-01 | Microelectronic imaging units and methods of manufacturing microelectronic imaging units at the wafer level |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200721471A true TW200721471A (en) | 2007-06-01 |
Family
ID=37582754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095132427A TW200721471A (en) | 2005-09-01 | 2006-09-01 | Microelectronic imaging units and methods of manufacturing microelectronic imaging units at the wafer level |
Country Status (7)
Country | Link |
---|---|
US (1) | US7452743B2 (zh) |
EP (1) | EP1932179A2 (zh) |
JP (1) | JP2009507376A (zh) |
KR (1) | KR20080045259A (zh) |
CN (1) | CN101292352A (zh) |
TW (1) | TW200721471A (zh) |
WO (1) | WO2007027880A2 (zh) |
Cited By (10)
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---|---|---|---|---|
TWI479553B (zh) * | 2008-06-19 | 2015-04-01 | Invensas Corp | 半導體晶粒分離方法及半導體晶粒區塊或半導體晶粒列的陣列 |
US9595511B1 (en) | 2016-05-12 | 2017-03-14 | Invensas Corporation | Microelectronic packages and assemblies with improved flyby signaling operation |
US9666513B2 (en) | 2015-07-17 | 2017-05-30 | Invensas Corporation | Wafer-level flipped die stacks with leadframes or metal foil interconnects |
US9728524B1 (en) | 2016-06-30 | 2017-08-08 | Invensas Corporation | Enhanced density assembly having microelectronic packages mounted at substantial angle to board |
US9773766B2 (en) | 2013-01-09 | 2017-09-26 | Sandisk Information Technology (Shanghai) Co., Ltd. | Semiconductor device including independent film layer for embedding and/or spacing semiconductor die |
US9825002B2 (en) | 2015-07-17 | 2017-11-21 | Invensas Corporation | Flipped die stack |
US9824999B2 (en) | 2007-09-10 | 2017-11-21 | Invensas Corporation | Semiconductor die mount by conformal die coating |
US9859257B2 (en) | 2015-12-16 | 2018-01-02 | Invensas Corporation | Flipped die stacks with multiple rows of leadframe interconnects |
US9871019B2 (en) | 2015-07-17 | 2018-01-16 | Invensas Corporation | Flipped die stack assemblies with leadframe interconnects |
US10566310B2 (en) | 2016-04-11 | 2020-02-18 | Invensas Corporation | Microelectronic packages having stacked die and wire bond interconnects |
Families Citing this family (61)
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US6764940B1 (en) | 2001-03-13 | 2004-07-20 | Novellus Systems, Inc. | Method for depositing a diffusion barrier for copper interconnect applications |
US8298933B2 (en) | 2003-04-11 | 2012-10-30 | Novellus Systems, Inc. | Conformal films on semiconductor substrates |
US7842605B1 (en) | 2003-04-11 | 2010-11-30 | Novellus Systems, Inc. | Atomic layer profiling of diffusion barrier and metal seed layers |
US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
US7091124B2 (en) * | 2003-11-13 | 2006-08-15 | Micron Technology, Inc. | Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices |
US20050247894A1 (en) | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
US7232754B2 (en) * | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US7189954B2 (en) * | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US7425499B2 (en) * | 2004-08-24 | 2008-09-16 | Micron Technology, Inc. | Methods for forming interconnects in vias and microelectronic workpieces including such interconnects |
US7083425B2 (en) | 2004-08-27 | 2006-08-01 | Micron Technology, Inc. | Slanted vias for electrical circuits on circuit boards and other substrates |
US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US7727881B1 (en) | 2004-11-03 | 2010-06-01 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
US7727880B1 (en) | 2004-11-03 | 2010-06-01 | Novellus Systems, Inc. | Protective self-aligned buffer layers for damascene interconnects |
US7271482B2 (en) * | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US7863187B2 (en) | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7749899B2 (en) | 2006-06-01 | 2010-07-06 | Micron Technology, Inc. | Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces |
US7629249B2 (en) | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
US7902643B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
US7510634B1 (en) | 2006-11-10 | 2009-03-31 | Novellus Systems, Inc. | Apparatus and methods for deposition and/or etch selectivity |
KR100823841B1 (ko) * | 2006-12-21 | 2008-04-21 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조 방법 |
US7682966B1 (en) | 2007-02-01 | 2010-03-23 | Novellus Systems, Inc. | Multistep method of depositing metal seed layers |
US7767544B2 (en) * | 2007-04-12 | 2010-08-03 | Micron Technology Inc. | Semiconductor fabrication method and system |
US7528420B2 (en) * | 2007-05-23 | 2009-05-05 | Visera Technologies Company Limited | Image sensing devices and methods for fabricating the same |
US8723332B2 (en) | 2007-06-11 | 2014-05-13 | Invensas Corporation | Electrically interconnected stacked die assemblies |
JP4939313B2 (ja) * | 2007-06-12 | 2012-05-23 | シャープ株式会社 | 半導体装置の製造方法 |
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SG149710A1 (en) | 2007-07-12 | 2009-02-27 | Micron Technology Inc | Interconnects for packaged semiconductor devices and methods for manufacturing such devices |
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JP4693827B2 (ja) * | 2007-09-20 | 2011-06-01 | 株式会社東芝 | 半導体装置とその製造方法 |
US7884015B2 (en) | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7924330B2 (en) * | 2007-12-20 | 2011-04-12 | Aptina Imaging Corporation | Methods and apparatuses for double sided dark reference pixel row-wise dark level non-uniformity compensation in image signals |
US8084854B2 (en) | 2007-12-28 | 2011-12-27 | Micron Technology, Inc. | Pass-through 3D interconnect for microelectronic dies and associated systems and methods |
US20090206431A1 (en) * | 2008-02-20 | 2009-08-20 | Micron Technology, Inc. | Imager wafer level module and method of fabrication and use |
JP5763924B2 (ja) | 2008-03-12 | 2015-08-12 | インヴェンサス・コーポレーション | ダイアセンブリを電気的に相互接続して取り付けられたサポート |
US7880244B2 (en) * | 2008-04-15 | 2011-02-01 | Analog Devices, Inc. | Wafer level CSP sensor |
US8253230B2 (en) | 2008-05-15 | 2012-08-28 | Micron Technology, Inc. | Disabling electrical connections using pass-through 3D interconnects and associated systems and methods |
US9153517B2 (en) | 2008-05-20 | 2015-10-06 | Invensas Corporation | Electrical connector between die pad and z-interconnect for stacked die assemblies |
KR20110051191A (ko) * | 2008-08-29 | 2011-05-17 | 버티칼 서킷, 인크. | 이미지 센서 |
US8268722B2 (en) * | 2009-06-03 | 2012-09-18 | Novellus Systems, Inc. | Interfacial capping layers for interconnects |
JP5963671B2 (ja) | 2009-06-26 | 2016-08-03 | インヴェンサス・コーポレーション | ジグザクの構成でスタックされたダイに関する電気的相互接続 |
WO2011056668A2 (en) | 2009-10-27 | 2011-05-12 | Vertical Circuits, Inc. | Selective die electrical insulation additive process |
TWI544604B (zh) | 2009-11-04 | 2016-08-01 | 英維瑟斯公司 | 具有降低應力電互連的堆疊晶粒總成 |
US20110294237A1 (en) * | 2010-05-27 | 2011-12-01 | MOS Art Pack Corporation | Packaging method of semiconductor device |
US9066072B2 (en) * | 2010-07-20 | 2015-06-23 | Semiconductor Components Industries, Llc | Systems and methods for calibrating image sensors |
US8349710B2 (en) | 2010-10-25 | 2013-01-08 | Stmicroelectronics Asia Pacific Pte. Ltd. | Shielding techniques for an integrated circuit |
WO2012167141A2 (en) | 2011-06-03 | 2012-12-06 | Novellus Systems, Inc. | Metal and silicon containing capping layers for interconnects |
JP5963448B2 (ja) * | 2012-01-13 | 2016-08-03 | キヤノン株式会社 | 撮像装置 |
US9269700B2 (en) | 2014-03-31 | 2016-02-23 | Micron Technology, Inc. | Stacked semiconductor die assemblies with improved thermal performance and associated systems and methods |
DE102015100686A1 (de) * | 2015-01-19 | 2016-07-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von Halbleiterchips und Halbleiterchip |
US9543347B2 (en) * | 2015-02-24 | 2017-01-10 | Optiz, Inc. | Stress released image sensor package structure and method |
US9741620B2 (en) | 2015-06-24 | 2017-08-22 | Invensas Corporation | Structures and methods for reliable packages |
JP6727948B2 (ja) * | 2015-07-24 | 2020-07-22 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、製造方法 |
EP3144032A1 (en) * | 2015-09-15 | 2017-03-22 | Pixium Vision SA | Photosensitive pixel structure with front side coating |
US9633896B1 (en) | 2015-10-09 | 2017-04-25 | Lam Research Corporation | Methods for formation of low-k aluminum-containing etch stop films |
US10199333B2 (en) * | 2017-07-05 | 2019-02-05 | Omnivision Technologies, Inc. | Delamination-resistant semiconductor device and associated method |
CN107611152B (zh) * | 2017-09-05 | 2020-02-04 | 中芯长电半导体(江阴)有限公司 | 背照式cmos传感器的封装方法 |
US11257679B2 (en) * | 2018-11-26 | 2022-02-22 | Stmicroelectronics Pte Ltd | Method for removing a sacrificial layer on semiconductor wafers |
FR3094140B1 (fr) | 2019-03-22 | 2022-04-08 | Isorg | Capteur d'images comprenant un filtre angulaire |
FR3104745B1 (fr) * | 2019-12-11 | 2023-04-28 | Isorg | Filtre optique adapté pour corriger le bruit électronique d'un capteur |
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JP3031756B2 (ja) | 1990-08-02 | 2000-04-10 | キヤノン株式会社 | 光電変換装置 |
JP3180748B2 (ja) | 1997-12-11 | 2001-06-25 | 日本電気株式会社 | 固体撮像装置 |
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TW513809B (en) * | 2002-02-07 | 2002-12-11 | United Microelectronics Corp | Method of fabricating an image sensor |
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JP3646720B2 (ja) | 2003-06-19 | 2005-05-11 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
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US7583862B2 (en) | 2003-11-26 | 2009-09-01 | Aptina Imaging Corporation | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US7253397B2 (en) | 2004-02-23 | 2007-08-07 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US7148715B2 (en) | 2004-06-02 | 2006-12-12 | Micron Technology, Inc. | Systems and methods for testing microelectronic imagers and microfeature devices |
-
2005
- 2005-09-01 US US11/217,877 patent/US7452743B2/en active Active
-
2006
- 2006-08-31 EP EP06790111A patent/EP1932179A2/en not_active Withdrawn
- 2006-08-31 KR KR1020087007940A patent/KR20080045259A/ko not_active Application Discontinuation
- 2006-08-31 WO PCT/US2006/034011 patent/WO2007027880A2/en active Application Filing
- 2006-08-31 JP JP2008529273A patent/JP2009507376A/ja not_active Withdrawn
- 2006-08-31 CN CNA2006800385991A patent/CN101292352A/zh active Pending
- 2006-09-01 TW TW095132427A patent/TW200721471A/zh unknown
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9824999B2 (en) | 2007-09-10 | 2017-11-21 | Invensas Corporation | Semiconductor die mount by conformal die coating |
TWI479553B (zh) * | 2008-06-19 | 2015-04-01 | Invensas Corp | 半導體晶粒分離方法及半導體晶粒區塊或半導體晶粒列的陣列 |
US9773766B2 (en) | 2013-01-09 | 2017-09-26 | Sandisk Information Technology (Shanghai) Co., Ltd. | Semiconductor device including independent film layer for embedding and/or spacing semiconductor die |
US9666513B2 (en) | 2015-07-17 | 2017-05-30 | Invensas Corporation | Wafer-level flipped die stacks with leadframes or metal foil interconnects |
US9825002B2 (en) | 2015-07-17 | 2017-11-21 | Invensas Corporation | Flipped die stack |
US9871019B2 (en) | 2015-07-17 | 2018-01-16 | Invensas Corporation | Flipped die stack assemblies with leadframe interconnects |
US9859257B2 (en) | 2015-12-16 | 2018-01-02 | Invensas Corporation | Flipped die stacks with multiple rows of leadframe interconnects |
US10566310B2 (en) | 2016-04-11 | 2020-02-18 | Invensas Corporation | Microelectronic packages having stacked die and wire bond interconnects |
US9595511B1 (en) | 2016-05-12 | 2017-03-14 | Invensas Corporation | Microelectronic packages and assemblies with improved flyby signaling operation |
US9728524B1 (en) | 2016-06-30 | 2017-08-08 | Invensas Corporation | Enhanced density assembly having microelectronic packages mounted at substantial angle to board |
Also Published As
Publication number | Publication date |
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EP1932179A2 (en) | 2008-06-18 |
KR20080045259A (ko) | 2008-05-22 |
US20070045632A1 (en) | 2007-03-01 |
CN101292352A (zh) | 2008-10-22 |
WO2007027880A2 (en) | 2007-03-08 |
JP2009507376A (ja) | 2009-02-19 |
US7452743B2 (en) | 2008-11-18 |
WO2007027880A3 (en) | 2008-01-17 |
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