TW200719101A - Laser beam exposure apparatus and method therefor - Google Patents

Laser beam exposure apparatus and method therefor

Info

Publication number
TW200719101A
TW200719101A TW095137692A TW95137692A TW200719101A TW 200719101 A TW200719101 A TW 200719101A TW 095137692 A TW095137692 A TW 095137692A TW 95137692 A TW95137692 A TW 95137692A TW 200719101 A TW200719101 A TW 200719101A
Authority
TW
Taiwan
Prior art keywords
laser beam
optical path
exposure apparatus
substrate
beam exposure
Prior art date
Application number
TW095137692A
Other languages
Chinese (zh)
Other versions
TWI324283B (en
Inventor
Haruyasu Kenmotsu
Hiroaki Sato
Yasuhito Ikeda
Masato Mori
Original Assignee
Orc Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orc Mfg Co Ltd filed Critical Orc Mfg Co Ltd
Publication of TW200719101A publication Critical patent/TW200719101A/en
Application granted granted Critical
Publication of TWI324283B publication Critical patent/TWI324283B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70025Production of exposure light, i.e. light sources by lasers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention is to provide a laser beam exposure apparatus and its method that will not cause deformation of identification mark or different optical path lengths, in a plurality of laser irradiation units. A laser beam exposure apparatus 5 comprises an optical path length control unit 6 for controlling the optical path length of a laser beam, from a laser beam light source 5a to a substrate; and a plurality of laser irradiation units 7, disposed on the moving path of the substrate and above the substrate and for irradiating the substrate with laser beams, having optical path lengths controlled by the optical path length control unit.
TW095137692A 2005-11-04 2006-10-13 Laser beam exposure apparatus and method therefor TW200719101A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005321256 2005-11-04
JP2006246266A JP4533874B2 (en) 2005-11-04 2006-09-12 Laser beam exposure system

Publications (2)

Publication Number Publication Date
TW200719101A true TW200719101A (en) 2007-05-16
TWI324283B TWI324283B (en) 2010-05-01

Family

ID=38209773

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137692A TW200719101A (en) 2005-11-04 2006-10-13 Laser beam exposure apparatus and method therefor

Country Status (3)

Country Link
JP (1) JP4533874B2 (en)
KR (1) KR100931712B1 (en)
TW (1) TW200719101A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101048785B1 (en) * 2008-09-25 2011-07-15 에이티엘(주) Digital exposure equipment
KR102225208B1 (en) * 2019-05-13 2021-03-09 디아이티 주식회사 System and method for treating the surface of semiconductor device
JP2024042874A (en) * 2022-09-16 2024-03-29 株式会社Screenホールディングス Exposure method and exposure apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3915851B2 (en) 1996-12-27 2007-05-16 オムロン株式会社 Method for marking using a laser beam and method for marking identification information on a glass substrate in the manufacturing process of a display panel
JP2000294501A (en) * 1999-04-09 2000-10-20 Nikon Corp Peripheral aligner and method
JP2000294500A (en) * 1999-04-09 2000-10-20 Nikon Corp Peripheral exposure device and the method
JP3091460B1 (en) * 1999-12-10 2000-09-25 東レエンジニアリング株式会社 Exposure equipment
JP4342663B2 (en) * 1999-12-20 2009-10-14 株式会社オーク製作所 Peripheral exposure equipment
JP2001201862A (en) * 2000-01-19 2001-07-27 Nikon Corp Peripheral aligner
JP3321733B2 (en) * 2000-09-20 2002-09-09 東レエンジニアリング株式会社 Exposure equipment
JP2002365811A (en) * 2001-06-08 2002-12-18 Mitsubishi Corp Method for exposing photoresist-coated substrate and exposure system therefor
JP3547418B2 (en) * 2001-10-25 2004-07-28 三菱商事株式会社 Method and apparatus for marking liquid crystal panel by laser beam
CN1288502C (en) * 2001-10-25 2006-12-06 东丽工程株式会社 Apparatus and method for marking an identifying code by using laser beam
KR20060053045A (en) * 2004-11-13 2006-05-19 삼성전자주식회사 Laser marking apparatus and method using galbanometer scanner
JP4664102B2 (en) * 2005-03-18 2011-04-06 東レエンジニアリング株式会社 Exposure apparatus and exposure method

Also Published As

Publication number Publication date
JP4533874B2 (en) 2010-09-01
KR20070048613A (en) 2007-05-09
KR100931712B1 (en) 2009-12-14
JP2007148359A (en) 2007-06-14
TWI324283B (en) 2010-05-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees