TW200715545A - Vertical anti-blooming control and cross-talk reduction for imagers - Google Patents

Vertical anti-blooming control and cross-talk reduction for imagers

Info

Publication number
TW200715545A
TW200715545A TW095131464A TW95131464A TW200715545A TW 200715545 A TW200715545 A TW 200715545A TW 095131464 A TW095131464 A TW 095131464A TW 95131464 A TW95131464 A TW 95131464A TW 200715545 A TW200715545 A TW 200715545A
Authority
TW
Taiwan
Prior art keywords
cross
imagers
vertical anti
talk reduction
blooming control
Prior art date
Application number
TW095131464A
Other languages
English (en)
Other versions
TWI314359B (en
Inventor
Frederick T Brady
Richard A Mauritzson
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200715545A publication Critical patent/TW200715545A/zh
Application granted granted Critical
Publication of TWI314359B publication Critical patent/TWI314359B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H01L27/14656—Overflow drain structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW095131464A 2005-08-26 2006-08-25 Vertical anti-blooming control and cross-talk reduction for imagers TWI314359B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/211,490 US20070045668A1 (en) 2005-08-26 2005-08-26 Vertical anti-blooming control and cross-talk reduction for imagers

Publications (2)

Publication Number Publication Date
TW200715545A true TW200715545A (en) 2007-04-16
TWI314359B TWI314359B (en) 2009-09-01

Family

ID=37461427

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131464A TWI314359B (en) 2005-08-26 2006-08-25 Vertical anti-blooming control and cross-talk reduction for imagers

Country Status (7)

Country Link
US (1) US20070045668A1 (zh)
EP (1) EP1929530A1 (zh)
JP (1) JP2009506547A (zh)
KR (1) KR20080037108A (zh)
CN (1) CN101292356A (zh)
TW (1) TWI314359B (zh)
WO (1) WO2007024819A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416717B (zh) * 2009-04-24 2013-11-21 Omnivision Tech Inc 用於減少串擾之多層影像感測器像素結構
TWI425629B (zh) * 2009-03-30 2014-02-01 Sony Corp 固態影像拾取裝置及其製造方法，影像拾取裝置及電子裝置
TWI503997B (zh) * 2009-09-18 2015-10-11 Ibm 區別波長之光檢測器及其成形方法及設計結構
TWI737833B (zh) * 2016-10-10 2021-09-01 法商索泰克公司 前側型影像感測器及用於製造該感測器之方法
TWI740641B (zh) * 2019-09-30 2021-09-21 台灣積體電路製造股份有限公司 影像感測器與用於形成影像感測器的方法

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US20080138926A1 (en) * 2006-12-11 2008-06-12 Lavine James P Two epitaxial layers to reduce crosstalk in an image sensor
KR100976886B1 (ko) 2006-12-22 2010-08-18 크로스텍 캐피탈, 엘엘씨 부동 베이스 판독 개념을 갖는 ｃｍｏｓ 이미지 센서
US20080217659A1 (en) * 2007-03-06 2008-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Device and Method To Reduce Cross-Talk and Blooming For Image Sensors
US20080217716A1 (en) * 2007-03-09 2008-09-11 Mauritzson Richard A Imaging apparatus, method, and system having reduced dark current
US7763837B2 (en) * 2007-11-20 2010-07-27 Aptina Imaging Corporation Method and apparatus for controlling anti-blooming timing to reduce effects of dark current
US20090166684A1 (en) * 2007-12-26 2009-07-02 3Dv Systems Ltd. Photogate cmos pixel for 3d cameras having reduced intra-pixel cross talk
KR20090098230A (ko) * 2008-03-13 2009-09-17 삼성전자주식회사 누설전류를 감소시킨 시모스 이미지 센서
US20090243025A1 (en) * 2008-03-25 2009-10-01 Stevens Eric G Pixel structure with a photodetector having an extended depletion depth
KR101534544B1 (ko) * 2008-09-17 2015-07-08 삼성전자주식회사 에피 층을 갖는 픽셀 셀을 구비한 이미지 센서, 이를 포함하는 시스템, 및 픽셀 셀 형성 방법
JP2010212319A (ja) * 2009-03-09 2010-09-24 Sony Corp 固体撮像装置、電子機器および固体撮像装置の製造方法
US8072041B2 (en) * 2009-04-08 2011-12-06 Finisar Corporation Passivated optical detectors with full protection layer
JP5971565B2 (ja) * 2011-06-22 2016-08-17 パナソニックＩｐマネジメント株式会社 固体撮像装置
GB201302664D0 (en) * 2013-02-15 2013-04-03 Cmosis Nv A pixel structure
US9070802B2 (en) * 2013-08-16 2015-06-30 Himax Imaging, Inc. Image sensor and fabricating method of image sensor
FR3022397B1 (fr) * 2014-06-13 2018-03-23 New Imaging Technologies Cellule photoelectrique de type c-mos a transfert de charge, et capteur matriciel comprenant un ensemble de telles cellules
KR102460175B1 (ko) 2015-08-21 2022-10-28 삼성전자주식회사 쉐어드 픽셀 및 이를 포함하는 이미지 센서
EP3422424B1 (en) * 2017-06-27 2022-09-07 ams AG Semiconductor photodetector device with protection against ambient back light

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US3971065A (en) * 1975-03-05 1976-07-20 Eastman Kodak Company Color imaging array
JP2793085B2 (ja) * 1992-06-25 1998-09-03 三洋電機株式会社 光半導体装置とその製造方法
KR100298178B1 (ko) * 1998-06-29 2001-08-07 박종섭 이미지센서의포토다이오드
US6218691B1 (en) * 1998-06-30 2001-04-17 Hyundai Electronics Industries Co., Ltd. Image sensor with improved dynamic range by applying negative voltage to unit pixel
US6140630A (en) * 1998-10-14 2000-10-31 Micron Technology, Inc. Vcc pump for CMOS imagers
US6376868B1 (en) * 1999-06-15 2002-04-23 Micron Technology, Inc. Multi-layered gate for a CMOS imager
US6310366B1 (en) * 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
US6326652B1 (en) * 1999-06-18 2001-12-04 Micron Technology, Inc., CMOS imager with a self-aligned buried contact
US6204524B1 (en) * 1999-07-14 2001-03-20 Micron Technology, Inc. CMOS imager with storage capacitor
US6333205B1 (en) * 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates
JP2001060680A (ja) * 1999-08-23 2001-03-06 Sony Corp 固体撮像素子およびその製造方法
JP4419238B2 (ja) * 1999-12-27 2010-02-24 ソニー株式会社 固体撮像素子及びその製造方法
JP2002203954A (ja) * 2000-10-31 2002-07-19 Sharp Corp 回路内蔵受光素子
US6783900B2 (en) * 2002-05-13 2004-08-31 Micron Technology, Inc. Color filter imaging array and method of formation
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
KR100523671B1 (ko) * 2003-04-30 2005-10-24 매그나칩 반도체 유한회사 이중 게이트절연막을 구비하는 씨모스 이미지 센서 및그의 제조 방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI425629B (zh) * 2009-03-30 2014-02-01 Sony Corp 固態影像拾取裝置及其製造方法，影像拾取裝置及電子裝置
TWI416717B (zh) * 2009-04-24 2013-11-21 Omnivision Tech Inc 用於減少串擾之多層影像感測器像素結構
TWI503997B (zh) * 2009-09-18 2015-10-11 Ibm 區別波長之光檢測器及其成形方法及設計結構
TWI737833B (zh) * 2016-10-10 2021-09-01 法商索泰克公司 前側型影像感測器及用於製造該感測器之方法
US11552123B2 (en) 2016-10-10 2023-01-10 Soitec Front-side type image sensors
TWI740641B (zh) * 2019-09-30 2021-09-21 台灣積體電路製造股份有限公司 影像感測器與用於形成影像感測器的方法

Also Published As

Publication number Publication date
WO2007024819A1 (en) 2007-03-01
EP1929530A1 (en) 2008-06-11
CN101292356A (zh) 2008-10-22
TWI314359B (en) 2009-09-01
US20070045668A1 (en) 2007-03-01
KR20080037108A (ko) 2008-04-29
JP2009506547A (ja) 2009-02-12

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