TW200715380A - Process for lateral disjonting of a semiconductor wafer and opto-electronic element - Google Patents

Process for lateral disjonting of a semiconductor wafer and opto-electronic element

Info

Publication number
TW200715380A
TW200715380A TW095131943A TW95131943A TW200715380A TW 200715380 A TW200715380 A TW 200715380A TW 095131943 A TW095131943 A TW 095131943A TW 95131943 A TW95131943 A TW 95131943A TW 200715380 A TW200715380 A TW 200715380A
Authority
TW
Taiwan
Prior art keywords
disjointing
semiconductor wafer
layer
lateral
disjonting
Prior art date
Application number
TW095131943A
Other languages
English (en)
Other versions
TWI314755B (en
Inventor
Volker Haerle
Christoph Eichler
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200715380A publication Critical patent/TW200715380A/zh
Application granted granted Critical
Publication of TWI314755B publication Critical patent/TWI314755B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
TW095131943A 2005-09-01 2006-08-30 Process for lateral disjointing of a semiconductor wafer and opto-electronic element TWI314755B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005041571 2005-09-01
DE102005052358A DE102005052358A1 (de) 2005-09-01 2005-11-02 Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement

Publications (2)

Publication Number Publication Date
TW200715380A true TW200715380A (en) 2007-04-16
TWI314755B TWI314755B (en) 2009-09-11

Family

ID=37075548

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131943A TWI314755B (en) 2005-09-01 2006-08-30 Process for lateral disjointing of a semiconductor wafer and opto-electronic element

Country Status (8)

Country Link
US (1) US20090117711A1 (zh)
EP (1) EP1920469B1 (zh)
JP (1) JP2009506969A (zh)
KR (1) KR101393777B1 (zh)
CN (1) CN101253636B (zh)
DE (2) DE102005052358A1 (zh)
TW (1) TWI314755B (zh)
WO (1) WO2007025497A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI472060B (zh) * 2011-09-19 2015-02-01 Osram Opto Semiconductors Gmbh 製造光電元件之方法

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DE102006007293B4 (de) * 2006-01-31 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper
DE102006061167A1 (de) 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
TW200802544A (en) 2006-04-25 2008-01-01 Osram Opto Semiconductors Gmbh Composite substrate and method for making the same
US7885306B2 (en) 2006-06-30 2011-02-08 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser chip
US20080303033A1 (en) * 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
DE102008019268A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2010180081A (ja) * 2009-02-04 2010-08-19 Sumitomo Electric Ind Ltd ＧａＮ基板およびその製造方法、ＧａＮ層接合基板の製造方法、ならびに半導体デバイスの製造方法
US8481411B2 (en) 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
US8860183B2 (en) 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
JP2012124473A (ja) * 2010-11-15 2012-06-28 Ngk Insulators Ltd 複合基板及び複合基板の製造方法
US20120309172A1 (en) * 2011-05-31 2012-12-06 Epowersoft, Inc. Epitaxial Lift-Off and Wafer Reuse
CN102867893A (zh) * 2012-09-17 2013-01-09 聚灿光电科技(苏州)有限公司 一种提高GaN衬底使用效率的方法
JP6213046B2 (ja) 2013-08-21 2017-10-18 信越半導体株式会社 貼り合わせウェーハの製造方法
US9577045B2 (en) 2014-08-04 2017-02-21 Fairchild Semiconductor Corporation Silicon carbide power bipolar devices with deep acceptor doping
EP3246937B1 (en) * 2015-01-16 2023-05-10 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor diamond substrate and semiconductor diamond substrate
CN110838463A (zh) * 2018-08-17 2020-02-25 胡兵 一种半导体衬底、将衬底层与其上功能层分离的方法
US20200321242A1 (en) * 2015-09-18 2020-10-08 Bing Hu Method of separating a film from a brittle material
DE102016114949B4 (de) * 2016-08-11 2023-08-24 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements
US10510532B1 (en) * 2018-05-29 2019-12-17 Industry-University Cooperation Foundation Hanyang University Method for manufacturing gallium nitride substrate using the multi ion implantation
DE102018119634A1 (de) * 2018-08-13 2020-02-13 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines halbleiterbauelements und werkstück
FR3109469B1 (fr) * 2020-04-15 2022-04-29 Centre Nat Rech Scient Procédé de fabrication d’un dispositif émetteur de rayonnement
CN112382563A (zh) * 2020-11-13 2021-02-19 济南晶正电子科技有限公司 离子注入薄膜晶圆剥离方法、单晶薄膜及电子元器件

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI472060B (zh) * 2011-09-19 2015-02-01 Osram Opto Semiconductors Gmbh 製造光電元件之方法
US9373747B2 (en) 2011-09-19 2016-06-21 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component

Also Published As

Publication number Publication date
CN101253636A (zh) 2008-08-27
DE102005052358A1 (de) 2007-03-15
DE502006009404D1 (de) 2011-06-09
TWI314755B (en) 2009-09-11
EP1920469B1 (de) 2011-04-27
WO2007025497A1 (de) 2007-03-08
KR101393777B1 (ko) 2014-05-12
CN101253636B (zh) 2011-09-07
US20090117711A1 (en) 2009-05-07
KR20080040795A (ko) 2008-05-08
JP2009506969A (ja) 2009-02-19
EP1920469A1 (de) 2008-05-14

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