FR3109469B1 - Procédé de fabrication d’un dispositif émetteur de rayonnement - Google Patents

Procédé de fabrication d’un dispositif émetteur de rayonnement Download PDF

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Publication number
FR3109469B1
FR3109469B1 FR2003779A FR2003779A FR3109469B1 FR 3109469 B1 FR3109469 B1 FR 3109469B1 FR 2003779 A FR2003779 A FR 2003779A FR 2003779 A FR2003779 A FR 2003779A FR 3109469 B1 FR3109469 B1 FR 3109469B1
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FR
France
Prior art keywords
face
manufacturing
emitting device
substrate
radiation emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2003779A
Other languages
English (en)
Other versions
FR3109469A1 (fr
Inventor
Julien Pernot
Gwenole Jacopin
Bruno Daudin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Grenoble Alpes
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique CEA
Universite Grenoble Alpes
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Commissariat a lEnergie Atomique CEA, Universite Grenoble Alpes, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR2003779A priority Critical patent/FR3109469B1/fr
Priority to EP21717112.3A priority patent/EP4136681A1/fr
Priority to PCT/EP2021/059580 priority patent/WO2021209460A1/fr
Priority to US17/996,240 priority patent/US20230197885A1/en
Publication of FR3109469A1 publication Critical patent/FR3109469A1/fr
Application granted granted Critical
Publication of FR3109469B1 publication Critical patent/FR3109469B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

Procédé de fabrication d’un dispositif émetteur de rayonnement L’invention concerne un procédé de fabrication d’un dispositif émetteur (10) comportant des étapes de : - fourniture d’un substrat (70) réalisé en un matériau semi-conducteur présentant une première face (85) délimitant le substrat (70) selon une direction (N) normale à la première face (85), - implantation, à travers la première face (85), d’atomes aptes à former une portion fragilisée dans le substrat, le substrat (70) comportant en outre une portion de surface (92) et une portion interne (95), la portion fragilisée (90) séparant la portion de surface (92) de la portion interne (95) selon la direction normale (N), - formation, sur la première face (85), d’une diode électroluminescente (20), - fixation d’une face (150) de la diode (20) à une deuxième face (155) d’un support (15), et - rupture de la portion fragilisée (90) pour séparer la portion de surface (92) de la portion interne (95). Figure pour l'abrégé : 1
FR2003779A 2020-04-15 2020-04-15 Procédé de fabrication d’un dispositif émetteur de rayonnement Active FR3109469B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2003779A FR3109469B1 (fr) 2020-04-15 2020-04-15 Procédé de fabrication d’un dispositif émetteur de rayonnement
EP21717112.3A EP4136681A1 (fr) 2020-04-15 2021-04-13 Procédé de fabrication d'un dispositif émetteur de rayonnement
PCT/EP2021/059580 WO2021209460A1 (fr) 2020-04-15 2021-04-13 Procédé de fabrication d'un dispositif émetteur de rayonnement
US17/996,240 US20230197885A1 (en) 2020-04-15 2021-04-13 Method for manufacturing a device for emitting radiation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2003779 2020-04-15
FR2003779A FR3109469B1 (fr) 2020-04-15 2020-04-15 Procédé de fabrication d’un dispositif émetteur de rayonnement

Publications (2)

Publication Number Publication Date
FR3109469A1 FR3109469A1 (fr) 2021-10-22
FR3109469B1 true FR3109469B1 (fr) 2022-04-29

Family

ID=72178663

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2003779A Active FR3109469B1 (fr) 2020-04-15 2020-04-15 Procédé de fabrication d’un dispositif émetteur de rayonnement

Country Status (4)

Country Link
US (1) US20230197885A1 (fr)
EP (1) EP4136681A1 (fr)
FR (1) FR3109469B1 (fr)
WO (1) WO2021209460A1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI442456B (zh) * 2004-08-31 2014-06-21 Sophia School Corp 發光元件
DE102004062290A1 (de) * 2004-12-23 2006-07-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterchips
DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
DE102005052357A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
US8163581B1 (en) * 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US8785294B2 (en) * 2012-07-26 2014-07-22 Gtat Corporation Silicon carbide lamina
CN110838463A (zh) * 2018-08-17 2020-02-25 胡兵 一种半导体衬底、将衬底层与其上功能层分离的方法
CN107706086B (zh) * 2017-07-31 2020-05-01 朱元勋 一种碳化硅衬底垂直结构簿膜电子器件及其制作方法

Also Published As

Publication number Publication date
WO2021209460A1 (fr) 2021-10-21
FR3109469A1 (fr) 2021-10-22
US20230197885A1 (en) 2023-06-22
EP4136681A1 (fr) 2023-02-22

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