TW200710258A - Carbon nanotube interconnect contacts - Google Patents

Carbon nanotube interconnect contacts

Info

Publication number
TW200710258A
TW200710258A TW095120251A TW95120251A TW200710258A TW 200710258 A TW200710258 A TW 200710258A TW 095120251 A TW095120251 A TW 095120251A TW 95120251 A TW95120251 A TW 95120251A TW 200710258 A TW200710258 A TW 200710258A
Authority
TW
Taiwan
Prior art keywords
carbon nanotube
opening
electroless plating
plating process
forming
Prior art date
Application number
TW095120251A
Other languages
English (en)
Inventor
Florian Gstrein
Adrien Lavoie
Valery Dubin
Juan Dominguez
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200710258A publication Critical patent/TW200710258A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1094—Conducting structures comprising nanotubes or nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
TW095120251A 2005-06-08 2006-06-07 Carbon nanotube interconnect contacts TW200710258A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/148,614 US20060281306A1 (en) 2005-06-08 2005-06-08 Carbon nanotube interconnect contacts

Publications (1)

Publication Number Publication Date
TW200710258A true TW200710258A (en) 2007-03-16

Family

ID=36901244

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095120251A TW200710258A (en) 2005-06-08 2006-06-07 Carbon nanotube interconnect contacts

Country Status (8)

Country Link
US (1) US20060281306A1 (zh)
JP (1) JP4829964B2 (zh)
KR (1) KR20080009325A (zh)
CN (1) CN101208793A (zh)
DE (1) DE112006001397B4 (zh)
GB (1) GB2442634A (zh)
TW (1) TW200710258A (zh)
WO (1) WO2006133318A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460839B (zh) * 2010-10-05 2014-11-11 Toshiba Kk 石墨烯（ｇｒａｐｈｅｎｅ）內連線及其製造方法
TWI463627B (zh) * 2010-07-09 2014-12-01 Micron Technology Inc 導電疊層結構，電氣互連及形成電氣互連之方法

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006148063A (ja) * 2004-10-22 2006-06-08 Renesas Technology Corp 配線構造、半導体装置、ｍｒａｍおよび半導体装置の製造方法
US20070155025A1 (en) * 2006-01-04 2007-07-05 Anping Zhang Nanowire structures and devices for use in large-area electronics and methods of making the same
US8119032B2 (en) * 2006-02-07 2012-02-21 President And Fellows Of Harvard College Gas-phase functionalization of surfaces including carbon-based surfaces
US8679630B2 (en) * 2006-05-17 2014-03-25 Purdue Research Foundation Vertical carbon nanotube device in nanoporous templates
US8174084B2 (en) * 2006-09-19 2012-05-08 Intel Corporation Stress sensor for in-situ measurement of package-induced stress in semiconductor devices
US9487877B2 (en) * 2007-02-01 2016-11-08 Purdue Research Foundation Contact metallization of carbon nanotubes
US20100200991A1 (en) * 2007-03-15 2010-08-12 Rohan Akolkar Dopant Enhanced Interconnect
US20100218801A1 (en) * 2008-07-08 2010-09-02 Chien-Min Sung Graphene and Hexagonal Boron Nitride Planes and Associated Methods
US20100055464A1 (en) * 2008-07-08 2010-03-04 Chien-Min Sung Graphene and Hexagonal Boron Nitride Planes and Associated Methods
KR101045128B1 (ko) 2008-08-04 2011-06-30 서울대학교산학협력단 나노구조물들의 교차 구조들의 제조
KR101681950B1 (ko) 2009-01-15 2016-12-05 삼성전자주식회사 그라펜 에지의 화학적 변형 방법 및 이에 의하여 얻어진 그라펜
US8715981B2 (en) * 2009-01-27 2014-05-06 Purdue Research Foundation Electrochemical biosensor
US8872154B2 (en) * 2009-04-06 2014-10-28 Purdue Research Foundation Field effect transistor fabrication from carbon nanotubes
US8128993B2 (en) * 2009-07-31 2012-03-06 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
US8574673B2 (en) * 2009-07-31 2013-11-05 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
JP5439120B2 (ja) * 2009-11-02 2014-03-12 株式会社東芝 半導体装置およびその製造方法
US8450202B1 (en) * 2009-11-05 2013-05-28 The Boeing Company Nanotube electronics templated self-assembly
US20110108854A1 (en) * 2009-11-10 2011-05-12 Chien-Min Sung Substantially lattice matched semiconductor materials and associated methods
US20110163298A1 (en) * 2010-01-04 2011-07-07 Chien-Min Sung Graphene and Hexagonal Boron Nitride Devices
CN102376633A (zh) * 2010-08-26 2012-03-14 中国科学院微电子研究所 一种半导体结构及其制造方法
CN102468220B (zh) * 2010-11-08 2013-12-25 中国科学院微电子研究所 一种金属互连结构及其形成方法
CN102136306B (zh) * 2010-11-10 2012-07-04 西北师范大学 Ag/石墨烯纳米导电复合材料及其制备方法
CN102130040A (zh) * 2010-12-17 2011-07-20 天津理工大学 一种形成碳纳米管通孔互连金属化接触的方法
CN102070120B (zh) * 2010-12-31 2012-09-05 东南大学 用于微电子系统级封装的高密度转接板的制备方法
CN102208350B (zh) * 2011-05-19 2012-08-29 北京大学 一种选择性湿法刻蚀制备内嵌碳纳米管沟槽结构的方法
EP2716604B1 (en) * 2011-06-03 2018-12-26 Sekisui Chemical Co., Ltd. Composite material and method for producing same
CN103187391B (zh) * 2011-12-31 2016-01-06 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
US9074295B2 (en) * 2013-03-15 2015-07-07 Raytheon Company Methods of etching carbon nanotube sheet material for electrical circuit and thin film thermal structure applications
US9406888B2 (en) 2013-08-07 2016-08-02 GlobalFoundries, Inc. Carbon nanotube device
JP6868609B2 (ja) * 2016-03-24 2021-05-12 古河電気工業株式会社 カーボンナノチューブ複合体及びカーボンナノチューブ線材
CN106229292A (zh) * 2016-08-26 2016-12-14 江苏大学 一种制作微电子器件的方法
JP7402502B2 (ja) 2017-04-04 2023-12-21 ナンヤン テクノロジカル ユニヴァーシティー メッキ物及びそれを形成する方法
US11325348B2 (en) * 2017-05-23 2022-05-10 Ut-Battelle, Llc Metal-carbon composites and methods for their production
US10141528B1 (en) 2017-05-23 2018-11-27 International Business Machines Corporation Enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors
CN110190122B (zh) * 2018-02-23 2022-07-12 中芯国际集成电路制造(上海)有限公司 晶体管及其形成方法
CN109321143A (zh) * 2018-08-28 2019-02-12 上海大学 垂直碳纳米管阵列与纳米银浆复合互连材料及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6129901A (en) * 1997-11-18 2000-10-10 Martin Moskovits Controlled synthesis and metal-filling of aligned carbon nanotubes
JP2003504857A (ja) * 1999-07-02 2003-02-04 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ ナノスコピックワイヤを用いる装置、アレイおよびその製造方法
DE10006964C2 (de) * 2000-02-16 2002-01-31 Infineon Technologies Ag Elektronisches Bauelement mit einer leitenden Verbindung zwischen zwei leitenden Schichten und Verfahren zum Herstellen eines elektronischen Bauelements
SE0001123L (sv) * 2000-03-30 2001-10-01 Abb Ab Kraftkabel
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
US6548313B1 (en) * 2002-05-31 2003-04-15 Intel Corporation Amorphous carbon insulation and carbon nanotube wires
JP2004067485A (ja) * 2002-08-09 2004-03-04 National Institute Of Advanced Industrial & Technology カーボンナノチューブの導電性改善方法
US7253434B2 (en) * 2002-10-29 2007-08-07 President And Fellows Of Harvard College Suspended carbon nanotube field effect transistor
US7518247B2 (en) * 2002-11-29 2009-04-14 Nec Corporation Semiconductor device and its manufacturing method
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
JP4448356B2 (ja) * 2004-03-26 2010-04-07 富士通株式会社 半導体装置およびその製造方法
US7227066B1 (en) * 2004-04-21 2007-06-05 Nanosolar, Inc. Polycrystalline optoelectronic devices based on templating technique
US7550179B2 (en) * 2004-08-30 2009-06-23 E.I Du Pont De Nemours And Company Method of copper deposition from a supercritical fluid solution containing copper (I) complexes with monoanionic bidentate and neutral monodentate ligands
JP2006120730A (ja) * 2004-10-19 2006-05-11 Fujitsu Ltd 層間配線に多層カーボンナノチューブを用いる配線構造及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463627B (zh) * 2010-07-09 2014-12-01 Micron Technology Inc 導電疊層結構，電氣互連及形成電氣互連之方法
TWI460839B (zh) * 2010-10-05 2014-11-11 Toshiba Kk 石墨烯（ｇｒａｐｈｅｎｅ）內連線及其製造方法
US9159615B2 (en) 2010-10-05 2015-10-13 Kabushiki Kaisha Toshiba Graphene interconnection and method of manufacturing the same

Also Published As

Publication number Publication date
WO2006133318A1 (en) 2006-12-14
GB0724761D0 (en) 2008-01-30
US20060281306A1 (en) 2006-12-14
CN101208793A (zh) 2008-06-25
JP2008544495A (ja) 2008-12-04
GB2442634A (en) 2008-04-09
DE112006001397T5 (de) 2008-05-08
KR20080009325A (ko) 2008-01-28
JP4829964B2 (ja) 2011-12-07
DE112006001397B4 (de) 2012-10-18

Similar Documents

Publication Publication Date Title
TW200710258A (en) Carbon nanotube interconnect contacts
TW200717709A (en) A method for forming a ruthenium metal layer on a patterned substrate
TW200707640A (en) Contact metallization scheme using a barrier layer over a silicide layer
SG166786A1 (en) Methods of fabricating interconnects for semiconductor components
TW200644164A (en) Method for forming a barrier/seed layer for copper metallization
TWI522499B (zh) A method of modifying the reduced graphene layer on the surface of the substrate
WO2009088522A3 (en) Cobalt nitride layers for copper interconnects and methods for forming them
WO2008118222A3 (en) Selective electroless deposition for solar cells
WO2008049019A3 (en) Copper deposition for filling features in manufacture of microelectronic devices
WO2002019418A3 (en) Method for achieving copper fill of high aspect ratio interconnect features
WO2009004855A1 (ja) 配線基板の製造方法
TW200518266A (en) Method for forming a multi-layer seed layer for improved Cu ECP
TW200717624A (en) Method for integrating a ruthenium layer with bulk copper in copper metallization
CN102971840A (zh) 用于金属化的方法、器件和材料
WO2009120727A3 (en) Processes and solutions for substrate cleaning and electroless deposition
WO2007025521A3 (de) Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement
WO2008055007A3 (en) Methods of fabricating a barrier layer with varying composition for copper metallization
WO2007058913A3 (en) Hydrogen transport membrane fabrication method
KR20010096602A (ko) 반도체 피처 형성 방법 및 반도체 구조체
TW200716794A (en) Integrated electroless deposition system
WO2008011403A3 (en) New scheme for copper filling in vias and trenches
JP2014067941A5 (zh)
WO2007092868A3 (en) Method for preparing a metal feature surface prior to electroless metal deposition
US20080315422A1 (en) Methods and apparatuses for three dimensional integrated circuits
ATE543190T1 (de) Materialabscheidung aus einer verflüssigten gaslösung