TW200709281A - Method for forming film of group iii nitride such as gallium nitride - Google Patents

Method for forming film of group iii nitride such as gallium nitride

Info

Publication number
TW200709281A
TW200709281A TW095128574A TW95128574A TW200709281A TW 200709281 A TW200709281 A TW 200709281A TW 095128574 A TW095128574 A TW 095128574A TW 95128574 A TW95128574 A TW 95128574A TW 200709281 A TW200709281 A TW 200709281A
Authority
TW
Taiwan
Prior art keywords
group iii
nitride
forming film
substrate
iii nitride
Prior art date
Application number
TW095128574A
Other languages
English (en)
Other versions
TWI308365B (zh
Inventor
Takahiro Nagata
Toyohiro Chikyo
Tsuyoshi Uehara
Original Assignee
Nat Inst For Materials Science
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Inst For Materials Science, Sekisui Chemical Co Ltd filed Critical Nat Inst For Materials Science
Publication of TW200709281A publication Critical patent/TW200709281A/zh
Application granted granted Critical
Publication of TWI308365B publication Critical patent/TWI308365B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
TW095128574A 2005-08-05 2006-08-04 Method for forming film of group iii nitride such as gallium nitride TW200709281A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005228727 2005-08-05

Publications (2)

Publication Number Publication Date
TW200709281A true TW200709281A (en) 2007-03-01
TWI308365B TWI308365B (zh) 2009-04-01

Family

ID=37727306

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095128574A TW200709281A (en) 2005-08-05 2006-08-04 Method for forming film of group iii nitride such as gallium nitride

Country Status (7)

Country Link
US (1) US20090170294A1 (zh)
EP (1) EP1916704A4 (zh)
JP (1) JPWO2007018121A1 (zh)
KR (1) KR20080034022A (zh)
CN (1) CN100589229C (zh)
TW (1) TW200709281A (zh)
WO (1) WO2007018121A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008111401A1 (ja) * 2007-03-14 2008-09-18 Sekisui Chemical Co., Ltd. 窒化ガリウム等のiii族窒化物の成膜方法
US20100006023A1 (en) * 2008-07-11 2010-01-14 Palo Alto Research Center Incorporated Method For Preparing Films And Devices Under High Nitrogen Chemical Potential
JP2012504873A (ja) * 2008-10-03 2012-02-23 ビーコ プロセス イクイップメント， インコーポレイテッド 気相エピタキシーシステム
TW201250017A (en) * 2011-06-08 2012-12-16 Ind Tech Res Inst Method and apparatus for depositing selenium thin-film and plasma head thereof
CN104561940A (zh) * 2014-12-24 2015-04-29 苏州矩阵光电有限公司 等离子体辅助的金属有机物化学气相沉积设备及方法
JP7097767B2 (ja) * 2018-07-19 2022-07-08 サカタインクス株式会社 プラズマ処理立体造形装置
JP2022139024A (ja) * 2021-03-11 2022-09-26 株式会社Ｓｃｒｅｅｎホールディングス Ｉｉｉ族窒化物半導体の製造方法および製造装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334277A (en) * 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
US5433169A (en) * 1990-10-25 1995-07-18 Nichia Chemical Industries, Ltd. Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer
JP3774257B2 (ja) * 1996-01-30 2006-05-10 京セラ株式会社 窒化物半導体単結晶薄膜の成長方法及び同装置
JPH11217673A (ja) * 1997-11-28 1999-08-10 Japan Pionics Co Ltd 窒化膜の製造方法
US6106898A (en) * 1997-11-28 2000-08-22 Japan Pionics, Co., Ltd. Process for preparing nitride film
JP2000109979A (ja) * 1998-10-05 2000-04-18 Tokujiro Okui 直流アーク放電プラズマによる表面処理方法
JP2000232256A (ja) * 1999-02-09 2000-08-22 Fuji Xerox Co Ltd 半導体素子及び半導体素子の製造方法
US6306739B1 (en) * 1999-04-27 2001-10-23 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom
US6562124B1 (en) * 1999-06-02 2003-05-13 Technologies And Devices International, Inc. Method of manufacturing GaN ingots
JP2001217193A (ja) * 2000-02-01 2001-08-10 Namiki Precision Jewel Co Ltd ＡｌＮバッファ層の作成方法、ＡｌＮバッファ層、ＧａＮ単結晶膜の作成方法およびＧａＮ単結晶膜
JP2002029896A (ja) * 2000-07-05 2002-01-29 National Institute Of Advanced Industrial & Technology 窒化物半導体の結晶成長方法
US7919791B2 (en) * 2002-03-25 2011-04-05 Cree, Inc. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US7507678B2 (en) * 2004-03-26 2009-03-24 Sekesui Chemical Co., Ltd. Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film, and substrate

Also Published As

Publication number Publication date
JPWO2007018121A1 (ja) 2009-02-19
KR20080034022A (ko) 2008-04-17
WO2007018121A1 (ja) 2007-02-15
US20090170294A1 (en) 2009-07-02
EP1916704A1 (en) 2008-04-30
CN100589229C (zh) 2010-02-10
CN101233602A (zh) 2008-07-30
TWI308365B (zh) 2009-04-01
EP1916704A4 (en) 2011-06-08

Similar Documents

Publication Publication Date Title
TW200709281A (en) Method for forming film of group iii nitride such as gallium nitride
TW200614372A (en) Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film and base material
WO2007109491A3 (en) Selective deposition
TW200618112A (en) Semiconductor device manufacturing method and plasma oxidation treatment method
TW200714843A (en) A vapor drying method and an apparatus
TW200729339A (en) Selective etch of films with high dielectric constant with H2 addition
WO2006007313A3 (en) Improving water-barrier performance of an encapsulating film
TW200717611A (en) Film formation method and apparatus for semiconductor process
TW200610033A (en) Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
TW200733196A (en) Vaporizer, semiconductor manufacturing apparatus and manufacturing method thereof
WO2011028349A3 (en) Remote hydrogen plasma source of silicon containing film deposition
TW200634927A (en) Method of manufacturing semiconductor device
WO2010044430A1 (ja) 半導体装置
WO2008149643A1 (ja) プラズマドーピング装置及び方法
WO2006022905A3 (en) Discharge-enhanced atmospheric pressure chemical vapor deposition
TW200802550A (en) Plasma CVD apparatus and thin film forming method as well as semiconductor device
TW200707550A (en) Film formation method and apparatus for semiconductor process
TW200746356A (en) Semiconductor integrated circuit device and method for manufacture thereof
TW200644090A (en) Plasma doping method and system
TW200746265A (en) Methods and apparatus for epitaxial film formation
TW200721265A (en) Silicon dot forming method and silicon dot forming apparatus
WO2008090763A1 (ja) 半導体装置の製造方法及び半導体製造装置
JP2010507924A5 (zh)
TW200503114A (en) Single-substrate heat-processing apparatus for semiconductor processing system
TW200707587A (en) Apparatus and method for maintaining a near-atmospheric pressure inside a process chamber

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees