TW200708898A - Chemical amplification-type resist composition and production process thereof - Google Patents
Chemical amplification-type resist composition and production process thereofInfo
- Publication number
- TW200708898A TW200708898A TW095127054A TW95127054A TW200708898A TW 200708898 A TW200708898 A TW 200708898A TW 095127054 A TW095127054 A TW 095127054A TW 95127054 A TW95127054 A TW 95127054A TW 200708898 A TW200708898 A TW 200708898A
- Authority
- TW
- Taiwan
- Prior art keywords
- production process
- chemical amplification
- resist composition
- type resist
- acid
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D61/00—Processes of separation using semi-permeable membranes, e.g. dialysis, osmosis or ultrafiltration; Apparatus, accessories or auxiliary operations specially adapted therefor
- B01D61/14—Ultrafiltration; Microfiltration
- B01D61/145—Ultrafiltration
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/136—Coating process making radiation sensitive element
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005219198A JP5002137B2 (ja) | 2005-07-28 | 2005-07-28 | 化学増幅型レジスト組成物及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200708898A true TW200708898A (en) | 2007-03-01 |
TWI481960B TWI481960B (zh) | 2015-04-21 |
Family
ID=37441768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095127054A TWI481960B (zh) | 2005-07-28 | 2006-07-25 | 化學增幅型光阻組成物之製法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7294450B2 (zh) |
EP (1) | EP1748318B1 (zh) |
JP (1) | JP5002137B2 (zh) |
KR (1) | KR101453350B1 (zh) |
TW (1) | TWI481960B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI394802B (zh) * | 2007-11-22 | 2013-05-01 | Shinetsu Chemical Co | 含金屬氧化物之膜形成用組成物,含金屬氧化物膜、含金屬氧化物膜所形成之基板及使用其之圖型形成方法 |
TWI494693B (zh) * | 2010-01-13 | 2015-08-01 | Shinetsu Chemical Co | 負型光阻組成物及圖型之形成方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI403843B (zh) * | 2005-09-13 | 2013-08-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
JP4976229B2 (ja) * | 2007-08-03 | 2012-07-18 | 株式会社ダイセル | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 |
JP5136202B2 (ja) * | 2008-05-19 | 2013-02-06 | Jsr株式会社 | レジスト用樹脂含有溶液の製造方法 |
JP5282015B2 (ja) * | 2008-12-09 | 2013-09-04 | 住友化学株式会社 | 樹脂溶解液の精製方法、取得方法及び化学増幅型フォトレジスト組成物の製造方法 |
WO2010082232A1 (ja) * | 2009-01-15 | 2010-07-22 | ダイセル化学工業株式会社 | フォトレジスト用樹脂溶液の製造方法、フォトレジスト組成物およびパターン形成方法 |
TW201106101A (en) * | 2009-06-01 | 2011-02-16 | Fujifilm Electronic Materials | Chemically amplified positive photoresist composition |
KR20130090756A (ko) * | 2010-03-31 | 2013-08-14 | 스미또모 베이크라이트 가부시키가이샤 | 포지티브형 감광성 수지 조성물의 제조 방법, 포지티브형 감광성 수지 조성물, 및 필터 |
US20120018813A1 (en) * | 2010-07-22 | 2012-01-26 | International Business Machines Corporation | BARRIER COAT FOR ELIMINATION OF RESIST RESIDUES ON HIGH k/METAL GATE STACKS |
JP6060012B2 (ja) * | 2013-03-15 | 2017-01-11 | 富士フイルム株式会社 | パターン形成方法、及び、電子デバイスの製造方法 |
JP5728517B2 (ja) * | 2013-04-02 | 2015-06-03 | 富士フイルム株式会社 | 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法 |
JP2015197509A (ja) * | 2014-03-31 | 2015-11-09 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物の製造方法及び感活性光線性又は感放射線性樹脂組成物 |
Family Cites Families (18)
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US5521052A (en) * | 1994-12-30 | 1996-05-28 | Hoechst Celanese Corporation | Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom |
US6232417B1 (en) * | 1996-03-07 | 2001-05-15 | The B. F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
US7147983B1 (en) * | 1996-10-07 | 2006-12-12 | Shipley Company, L.L.C. | Dyed photoresists and methods and articles of manufacture comprising same |
JP3436045B2 (ja) * | 1997-02-18 | 2003-08-11 | 住友化学工業株式会社 | レジスト組成物の製造方法 |
US6037107A (en) * | 1997-08-28 | 2000-03-14 | Shipley Company, L.L.C. | Photoresist compositions |
JP2001350266A (ja) | 2000-06-09 | 2001-12-21 | Sumitomo Chem Co Ltd | レジスト組成物の製造方法 |
US6447980B1 (en) * | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
JP2002062667A (ja) | 2000-08-23 | 2002-02-28 | Sumitomo Chem Co Ltd | 微粒子量の低減されたフォトレジスト組成物の製造方法 |
JP4190167B2 (ja) * | 2000-09-26 | 2008-12-03 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
US6610465B2 (en) * | 2001-04-11 | 2003-08-26 | Clariant Finance (Bvi) Limited | Process for producing film forming resins for photoresist compositions |
US7264912B2 (en) * | 2001-04-13 | 2007-09-04 | Sumitomo Chemical Company, Limited | Method of producing photoresist |
US6989224B2 (en) * | 2001-10-09 | 2006-01-24 | Shipley Company, L.L.C. | Polymers with mixed photoacid-labile groups and photoresists comprising same |
JP4557497B2 (ja) * | 2002-03-03 | 2010-10-06 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | シランモノマー及びポリマーを製造する方法及びそれを含むフォトレジスト組成物 |
JP2003330202A (ja) * | 2002-05-09 | 2003-11-19 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物の製造方法 |
JP4637476B2 (ja) * | 2002-12-19 | 2011-02-23 | 東京応化工業株式会社 | ホトレジスト組成物の製造方法 |
US20040191674A1 (en) * | 2003-03-28 | 2004-09-30 | Yukio Hanamoto | Chemical amplification resist composition |
JP2005049695A (ja) * | 2003-07-30 | 2005-02-24 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
US7537879B2 (en) * | 2004-11-22 | 2009-05-26 | Az Electronic Materials Usa Corp. | Photoresist composition for deep UV and process thereof |
-
2005
- 2005-07-28 JP JP2005219198A patent/JP5002137B2/ja active Active
-
2006
- 2006-07-25 TW TW095127054A patent/TWI481960B/zh active
- 2006-07-27 EP EP06015686.6A patent/EP1748318B1/en active Active
- 2006-07-27 US US11/493,517 patent/US7294450B2/en active Active
- 2006-07-28 KR KR1020060071222A patent/KR101453350B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI394802B (zh) * | 2007-11-22 | 2013-05-01 | Shinetsu Chemical Co | 含金屬氧化物之膜形成用組成物,含金屬氧化物膜、含金屬氧化物膜所形成之基板及使用其之圖型形成方法 |
TWI494693B (zh) * | 2010-01-13 | 2015-08-01 | Shinetsu Chemical Co | 負型光阻組成物及圖型之形成方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1748318A3 (en) | 2011-02-02 |
JP5002137B2 (ja) | 2012-08-15 |
US20070026343A1 (en) | 2007-02-01 |
US7294450B2 (en) | 2007-11-13 |
KR20070015055A (ko) | 2007-02-01 |
EP1748318B1 (en) | 2013-07-03 |
KR101453350B1 (ko) | 2014-10-21 |
EP1748318A2 (en) | 2007-01-31 |
JP2007034049A (ja) | 2007-02-08 |
TWI481960B (zh) | 2015-04-21 |
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