TW200700921A - Positive photoresist composition, thick-film photoresist layer laminate, method for forming thick-film resist pattern and method for forming connection terminal - Google Patents
Positive photoresist composition, thick-film photoresist layer laminate, method for forming thick-film resist pattern and method for forming connection terminalInfo
- Publication number
- TW200700921A TW200700921A TW095112204A TW95112204A TW200700921A TW 200700921 A TW200700921 A TW 200700921A TW 095112204 A TW095112204 A TW 095112204A TW 95112204 A TW95112204 A TW 95112204A TW 200700921 A TW200700921 A TW 200700921A
- Authority
- TW
- Taiwan
- Prior art keywords
- thick
- forming
- film
- photoresist composition
- positive photoresist
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/282—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005151252A JP2006330180A (ja) | 2005-05-24 | 2005-05-24 | ポジ型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜レジストパターンの製造方法および接続端子の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200700921A true TW200700921A (en) | 2007-01-01 |
Family
ID=37451761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095112204A TW200700921A (en) | 2005-05-24 | 2006-04-06 | Positive photoresist composition, thick-film photoresist layer laminate, method for forming thick-film resist pattern and method for forming connection terminal |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090068342A1 (zh) |
JP (1) | JP2006330180A (zh) |
KR (1) | KR20080006018A (zh) |
TW (1) | TW200700921A (zh) |
WO (1) | WO2006126329A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008191218A (ja) * | 2007-02-01 | 2008-08-21 | Tokyo Ohka Kogyo Co Ltd | 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法 |
US8017303B2 (en) * | 2009-02-23 | 2011-09-13 | International Business Machines Corporation | Ultra low post exposure bake photoresist materials |
WO2011053100A2 (ko) * | 2009-11-02 | 2011-05-05 | 주식회사 엘지화학 | 아크릴레이트 수지, 이를 포함하는 포토레지스트 조성물, 및 포토레지스트 패턴 |
JP5708082B2 (ja) * | 2010-03-24 | 2015-04-30 | 信越化学工業株式会社 | パターン形成方法及びネガ型レジスト組成物 |
JP6195445B2 (ja) * | 2012-02-27 | 2017-09-13 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物、ホトレジスト積層体、ホトレジストパターンの製造方法、及び接続端子の製造方法 |
JP6136355B2 (ja) * | 2012-02-27 | 2017-05-31 | 住友化学株式会社 | レジストパターンの製造方法 |
JP6327066B2 (ja) * | 2013-09-03 | 2018-05-23 | 住友化学株式会社 | 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法 |
JP6688178B2 (ja) * | 2015-07-14 | 2020-04-28 | 住友化学株式会社 | レジスト組成物 |
JP6739251B2 (ja) * | 2015-07-24 | 2020-08-12 | 住友化学株式会社 | レジスト組成物 |
TWI696891B (zh) * | 2015-12-09 | 2020-06-21 | 日商住友化學股份有限公司 | 光阻組成物及光阻圖案之製造方法 |
JP7257142B2 (ja) * | 2018-12-27 | 2023-04-13 | 東京応化工業株式会社 | 化学増幅型感光性組成物、感光性ドライフィルム、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法及びめっき造形物の製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3476374B2 (ja) * | 1998-10-09 | 2003-12-10 | 富士写真フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
US7068381B1 (en) * | 2000-02-02 | 2006-06-27 | Raja Tuli | Portable high speed internet access device |
JP4370668B2 (ja) * | 2000-03-29 | 2009-11-25 | Jsr株式会社 | メッキ造形物製造用ポジ型感放射線性樹脂組成物およびメッキ造形物の製造方法 |
JP2001318465A (ja) * | 2000-05-11 | 2001-11-16 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JP3710717B2 (ja) * | 2001-03-06 | 2005-10-26 | 東京応化工業株式会社 | 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法 |
KR20020090489A (ko) * | 2001-05-28 | 2002-12-05 | 금호석유화학 주식회사 | 화학증폭형 레지스트용 중합체 및 이를 함유한 화학증폭형레지스트 조성물 |
US7122589B2 (en) * | 2002-09-30 | 2006-10-17 | Fuji Photo Film Co., Ltd | Positive resist composition and pattern formation method using the same |
US7338740B2 (en) * | 2003-03-27 | 2008-03-04 | Fujifilm Corporation | Positive resist composition |
JP4267356B2 (ja) * | 2003-04-07 | 2009-05-27 | 東京応化工業株式会社 | 厚膜用化学増幅型ポジ型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜レジストパターンの製造方法及び接続端子の製造方法 |
JP4318944B2 (ja) * | 2003-04-07 | 2009-08-26 | 東京応化工業株式会社 | 厚膜用化学増幅型ポジ型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜レジストパターンの製造方法及び接続端子の製造方法 |
JP4318946B2 (ja) * | 2003-04-07 | 2009-08-26 | 東京応化工業株式会社 | 厚膜用化学増幅型ポジ型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜レジストパターンの製造方法及び接続端子の製造方法 |
KR101115224B1 (ko) * | 2004-02-04 | 2012-02-14 | 가부시끼가이샤 다이셀 | 불포화 카르복실산 헤미아세탈 에스테르, 고분자 화합물 및포토레지스트용 수지 조성물 |
JP2006096965A (ja) * | 2004-02-20 | 2006-04-13 | Tokyo Ohka Kogyo Co Ltd | 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法 |
JP2005300998A (ja) * | 2004-04-13 | 2005-10-27 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物及びレジストパターン形成方法 |
JP4622579B2 (ja) * | 2004-04-23 | 2011-02-02 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物及び(メタ)アクリル酸誘導体とその製法 |
WO2005111097A1 (ja) * | 2004-05-18 | 2005-11-24 | Idemitsu Kosan Co., Ltd. | アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料 |
JP4942925B2 (ja) * | 2004-06-18 | 2012-05-30 | 東京応化工業株式会社 | 高分子化合物、ポジ型レジスト組成物及びレジストパターン形成方法 |
JP2006001907A (ja) * | 2004-06-21 | 2006-01-05 | Tokyo Ohka Kogyo Co Ltd | 化合物、高分子化合物、ポジ型レジスト組成物、およびレジストパターン形成方法 |
JP4714488B2 (ja) * | 2004-08-26 | 2011-06-29 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US7081327B2 (en) * | 2004-12-29 | 2006-07-25 | Tokyo Ohka Kogyo Co., Ltd. | Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal |
JP4754265B2 (ja) * | 2005-05-17 | 2011-08-24 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
KR101054158B1 (ko) * | 2006-07-06 | 2011-08-03 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포지티브형 레지스트 조성물 및 패턴 형성 방법 |
-
2005
- 2005-05-24 JP JP2005151252A patent/JP2006330180A/ja not_active Withdrawn
-
2006
- 2006-03-30 WO PCT/JP2006/306674 patent/WO2006126329A1/ja active Application Filing
- 2006-03-30 US US11/915,134 patent/US20090068342A1/en not_active Abandoned
- 2006-03-30 KR KR1020077028859A patent/KR20080006018A/ko not_active Application Discontinuation
- 2006-04-06 TW TW095112204A patent/TW200700921A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20080006018A (ko) | 2008-01-15 |
WO2006126329A1 (ja) | 2006-11-30 |
JP2006330180A (ja) | 2006-12-07 |
US20090068342A1 (en) | 2009-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200700921A (en) | Positive photoresist composition, thick-film photoresist layer laminate, method for forming thick-film resist pattern and method for forming connection terminal | |
TW200619239A (en) | Positive resist composition and method for forming resist pattern | |
TW200732842A (en) | Positive resist composition and pattern forming method using the same | |
TW200600529A (en) | Polymer compound, photoresist composition including polymer compound, and method for forming resist pattern | |
TW200606589A (en) | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | |
TW200834240A (en) | Positive photosensitive resin composition | |
TW201100962A (en) | Positive resist composition, method of forming resist pattern, polymer compound | |
TW200715058A (en) | Positive resist composition and pattern-forming method using the same | |
TW200741347A (en) | Resist composition for use in immersion lithography and process for forming resist pattern | |
TW200627071A (en) | Resist composition for immersion exposure and method for forming resist pattern | |
TW200641522A (en) | Positive resist composition, method for forming resist pattern and compound | |
EP1975705A3 (en) | Positive resist composition and pattern-forming method | |
TW200834234A (en) | Radiation-sensitive resin compositions | |
TW200741348A (en) | Positive resist composition and pattern forming method using the same | |
TW200710576A (en) | Positive resist composition and method of pattern formation with the same | |
TW200801814A (en) | Positive resist composition and pattern formation method using the same | |
TW200745757A (en) | Positive resist composition for thick-film resist film forming, thick-film resist laminated product, and method for forming resist pattern | |
TW200801818A (en) | Composition for forming under film and method for forming pattern | |
TW200712777A (en) | Positive photosensitive resin composition, uses thereof, and method for forming positive pattern | |
TW200707107A (en) | Positive resist composition and method for forming resist pattern | |
TW200628983A (en) | Positive resist composition for immersion lithography and process for forming resist pattern | |
TW200602810A (en) | High molecular weight compound, photoresist composition containing the compound and formation method for photoresist pattern | |
TW200725181A (en) | Positive resist composition and pattern forming method using the same | |
TW200801812A (en) | Positive resist composition and pattern formation method using the positive resist composition | |
TW200707108A (en) | Positive resist composition and method for forming resist pattern |