TW200643847A - Electro-optical device, method of manufacturing electro-optical device, andelectronic appatatus - Google Patents
Electro-optical device, method of manufacturing electro-optical device, andelectronic appatatusInfo
- Publication number
- TW200643847A TW200643847A TW095112691A TW95112691A TW200643847A TW 200643847 A TW200643847 A TW 200643847A TW 095112691 A TW095112691 A TW 095112691A TW 95112691 A TW95112691 A TW 95112691A TW 200643847 A TW200643847 A TW 200643847A
- Authority
- TW
- Taiwan
- Prior art keywords
- optical device
- electro
- substrate
- region
- disposed
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 239000010409 thin film Substances 0.000 abstract 4
- 239000010408 film Substances 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005113146 | 2005-04-11 | ||
JP2006020094A JP4442569B2 (ja) | 2005-04-11 | 2006-01-30 | 電気光学装置及び電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200643847A true TW200643847A (en) | 2006-12-16 |
TWI283380B TWI283380B (en) | 2007-07-01 |
Family
ID=37233585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095112691A TWI283380B (en) | 2005-04-11 | 2006-04-10 | Electro-optical device, method of manufacturing electro-optical device |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060243977A1 (zh) |
JP (1) | JP4442569B2 (zh) |
KR (1) | KR100769068B1 (zh) |
TW (1) | TWI283380B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI449088B (zh) * | 2010-11-22 | 2014-08-11 | Lg Display Co Ltd | 液晶顯示裝置及其製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101252002B1 (ko) * | 2006-05-23 | 2013-04-08 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP4349406B2 (ja) * | 2006-08-24 | 2009-10-21 | セイコーエプソン株式会社 | 電気光学装置用基板及び電気光学装置、並びに電子機器 |
JP5130711B2 (ja) * | 2006-12-26 | 2013-01-30 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法 |
CN101620347B (zh) * | 2008-07-03 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶器件及其制造方法 |
KR102408898B1 (ko) | 2015-06-19 | 2022-06-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
KR102621005B1 (ko) * | 2018-12-26 | 2024-01-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5840821A (en) * | 1994-03-11 | 1998-11-24 | Kawasaki Steel Corporation | Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution |
KR100654927B1 (ko) * | 1999-03-04 | 2006-12-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그의 제작방법 |
JP4193339B2 (ja) * | 1999-09-29 | 2008-12-10 | セイコーエプソン株式会社 | 液晶装置及び投射型表示装置並びに液晶装置の製造方法 |
WO2001082273A1 (fr) * | 2000-04-21 | 2001-11-01 | Seiko Epson Corporation | Dispositif electro-optique |
US6636284B2 (en) * | 2000-08-11 | 2003-10-21 | Seiko Epson Corporation | System and method for providing an electro-optical device having light shield layers |
JP4798907B2 (ja) * | 2001-09-26 | 2011-10-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP3791517B2 (ja) * | 2002-10-31 | 2006-06-28 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
KR100870701B1 (ko) * | 2002-12-17 | 2008-11-27 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
TWI300508B (en) * | 2003-01-13 | 2008-09-01 | Toppoly Optoelectronics Corp | Liquid crystal display |
KR100961945B1 (ko) * | 2003-03-26 | 2010-06-08 | 삼성전자주식회사 | 액정 표시 장치 및 그에 사용되는 표시판 |
JP4341570B2 (ja) * | 2005-03-25 | 2009-10-07 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
KR101180863B1 (ko) * | 2005-05-31 | 2012-10-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
JP4586732B2 (ja) * | 2006-01-06 | 2010-11-24 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
-
2006
- 2006-01-30 JP JP2006020094A patent/JP4442569B2/ja not_active Expired - Fee Related
- 2006-04-10 US US11/401,007 patent/US20060243977A1/en not_active Abandoned
- 2006-04-10 KR KR1020060032304A patent/KR100769068B1/ko active IP Right Grant
- 2006-04-10 TW TW095112691A patent/TWI283380B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI449088B (zh) * | 2010-11-22 | 2014-08-11 | Lg Display Co Ltd | 液晶顯示裝置及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100769068B1 (ko) | 2007-10-22 |
JP4442569B2 (ja) | 2010-03-31 |
JP2006317901A (ja) | 2006-11-24 |
TWI283380B (en) | 2007-07-01 |
KR20060107928A (ko) | 2006-10-16 |
US20060243977A1 (en) | 2006-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |