TW200639576A - Method of manufacturing gray level mask, gray level mask, and gray level mask blank - Google Patents

Method of manufacturing gray level mask, gray level mask, and gray level mask blank

Info

Publication number
TW200639576A
TW200639576A TW095106896A TW95106896A TW200639576A TW 200639576 A TW200639576 A TW 200639576A TW 095106896 A TW095106896 A TW 095106896A TW 95106896 A TW95106896 A TW 95106896A TW 200639576 A TW200639576 A TW 200639576A
Authority
TW
Taiwan
Prior art keywords
gray level
level mask
film
semi
transparent
Prior art date
Application number
TW095106896A
Other languages
English (en)
Chinese (zh)
Inventor
Masaru Mitsui
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200639576A publication Critical patent/TW200639576A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW095106896A 2005-02-28 2006-02-27 Method of manufacturing gray level mask, gray level mask, and gray level mask blank TW200639576A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005054352 2005-02-28

Publications (1)

Publication Number Publication Date
TW200639576A true TW200639576A (en) 2006-11-16

Family

ID=37625148

Family Applications (2)

Application Number Title Priority Date Filing Date
TW095106896A TW200639576A (en) 2005-02-28 2006-02-27 Method of manufacturing gray level mask, gray level mask, and gray level mask blank
TW099103293A TWI395053B (zh) 2005-02-28 2006-02-27 灰階罩幕及灰階罩幕毛胚

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW099103293A TWI395053B (zh) 2005-02-28 2006-02-27 灰階罩幕及灰階罩幕毛胚

Country Status (3)

Country Link
JP (1) JP5201762B2 (enrdf_load_stackoverflow)
KR (3) KR20060095522A (enrdf_load_stackoverflow)
TW (2) TW200639576A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111367142A (zh) * 2018-12-26 2020-07-03 聚灿光电科技（宿迁）有限公司 一种包含不同透光性的新型光学掩膜版

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101329525B1 (ko) * 2006-10-04 2013-11-14 주식회사 에스앤에스텍 그레이톤 블랭크 마스크와 그레이톤 포토마스크 및 그제조방법
JP5064116B2 (ja) * 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法
TWI422961B (zh) * 2007-07-19 2014-01-11 Hoya Corp 光罩及其製造方法、圖案轉印方法、以及顯示裝置之製造方法
KR101216242B1 (ko) * 2010-03-05 2013-01-18 주식회사 피케이엘 슬릿형 하프톤 패턴을 이용한 포토 마스크 제조 방법 및 이를 이용하여 제조된 포토 마스크
JP6076593B2 (ja) * 2011-09-30 2017-02-08 Hoya株式会社 表示装置製造用多階調フォトマスク、表示装置製造用多階調フォトマスクの製造方法、パターン転写方法及び薄膜トランジスタの製造方法
KR101414335B1 (ko) * 2012-06-25 2014-07-02 주식회사 피케이엘 해상도 및 초점심도가 우수한 하프톤 위상반전마스크 및 그 제조 방법
JP5686216B1 (ja) * 2013-08-20 2015-03-18 大日本印刷株式会社 マスクブランクス、位相シフトマスク及びその製造方法
JP6322607B2 (ja) * 2015-07-30 2018-05-09 Hoya株式会社 表示デバイス製造用多階調フォトマスク、表示デバイス製造用多階調フォトマスクの製造方法、及び薄膜トランジスタの製造方法
JP6761255B2 (ja) * 2016-02-15 2020-09-23 関東化学株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP6322682B2 (ja) * 2016-10-26 2018-05-09 Hoya株式会社 パターン転写方法、表示装置の製造方法、及び、多階調フォトマスク
JP6463536B1 (ja) * 2018-05-09 2019-02-06 株式会社エスケーエレクトロニクス プロキシミティ露光用フォトマスクとその製造方法
KR102697809B1 (ko) * 2019-01-16 2024-08-23 엘지이노텍 주식회사 포토 마스크

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295385B1 (ko) * 1993-04-09 2001-09-17 기타지마 요시토시 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법
JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
JP3289992B2 (ja) * 1993-05-11 2002-06-10 株式会社長谷工コーポレーション 建物の共用縦管収納部の構築方法とその方法に用いる収納部構成用の区画壁
JP3453435B2 (ja) * 1993-10-08 2003-10-06 大日本印刷株式会社 位相シフトマスクおよびその製造方法
JP2878143B2 (ja) * 1994-02-22 1999-04-05 インターナショナル・ビジネス・マシーンズ・コーポレイション 減衰位相シフト・マスク作成用の薄膜材料及びその作成方法
TW312820B (en) * 1996-09-26 1997-08-11 Winbond Electronics Corp Contact defined photomask and method of applying to etching
JP4290386B2 (ja) * 2002-04-26 2009-07-01 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2004177683A (ja) * 2002-11-27 2004-06-24 Clariant (Japan) Kk 超高耐熱ポジ型感光性組成物を用いたパターン形成方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP4521694B2 (ja) * 2004-03-09 2010-08-11 Ｈｏｙａ株式会社 グレートーンマスク及び薄膜トランジスタの製造方法
JP5161419B2 (ja) * 2004-06-22 2013-03-13 Ｈｏｙａ株式会社 グレートーンマスクブランク及びグレートーンマスクの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111367142A (zh) * 2018-12-26 2020-07-03 聚灿光电科技（宿迁）有限公司 一种包含不同透光性的新型光学掩膜版

Also Published As

Publication number Publication date
TW201027235A (en) 2010-07-16
KR20060095522A (ko) 2006-08-31
JP2011090344A (ja) 2011-05-06
KR101269364B1 (ko) 2013-05-29
TWI395053B (zh) 2013-05-01
KR20120042809A (ko) 2012-05-03
JP5201762B2 (ja) 2013-06-05
KR20090128354A (ko) 2009-12-15

Similar Documents

Publication Publication Date Title
TW200639576A (en) Method of manufacturing gray level mask, gray level mask, and gray level mask blank
TW200600963A (en) Gray scale mask and method of manufacturing the same
TW200506514A (en) Method for manufacturing gray tone mask, and gray tone mask
TW200518172A (en) Photomask, and method for forming pattern
TW200733375A (en) Semiconductor device and manufacturing method thereof
TW200705564A (en) Method for manufacturing a narrow structure on an integrated circuit
TW200717176A (en) Photo mask having gradation sequence and method for manufacturing the same
TW200745737A (en) Photomask blank and photomask making method
TW200623233A (en) Photomask blank and photomask
TW200513789A (en) Attenuating phase shift mask and method of fabricating the same
TW200506506A (en) Method for manufacturing gray tone mask
TW200951621A (en) Multi-tone photomask, method of manufacturing a multi-tone photomask, pattern transfer method, and method of manufacturing a thin-film transistor
TW200707083A (en) Method for forming a lithograohy pattern
SG139530A1 (en) Method of optical proximity correction design for contact hole mask
TW200504234A (en) Method for producing mask for evaporation and the mask for evaporation
TW200702928A (en) Composition for underlayer film of resist and process for producing the same
WO2008117693A1 (ja) ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法
EP1387189A3 (de) Mindestens zweischichtiges Substrat für die Mikrolithographie
WO2008064176A3 (en) Method and system for improving particle beam lithography
TW200801791A (en) Pattern forming method and phase shift mask manufacturing method
TW200702935A (en) Methods for manufacturing gray level mask and thin film transistor substrate
TW200731005A (en) Photomask blank, photomask manufacturing method and semiconductor device manufacturing method
TW200721260A (en) Substrate processing method, photomask manufacturing method, photomask and device manufacturing method
TW200834226A (en) Mask blank and method for manufacturing transfer mask
TW200736818A (en) Pattern forming method and phase shift mask manufacturing method