TW200637042A - Microelectronic assembly with built-in thermoelectric cooler and method of fabricating same - Google Patents

Microelectronic assembly with built-in thermoelectric cooler and method of fabricating same

Info

Publication number
TW200637042A
TW200637042A TW094146538A TW94146538A TW200637042A TW 200637042 A TW200637042 A TW 200637042A TW 094146538 A TW094146538 A TW 094146538A TW 94146538 A TW94146538 A TW 94146538A TW 200637042 A TW200637042 A TW 200637042A
Authority
TW
Taiwan
Prior art keywords
built
microelectronic assembly
thermoelectric cooler
fabricating same
microelectronic
Prior art date
Application number
TW094146538A
Other languages
English (en)
Other versions
TWI313077B (en
Inventor
Mohammad Farahani
Gregory Chrysler
Kris Frutschy
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200637042A publication Critical patent/TW200637042A/zh
Application granted granted Critical
Publication of TWI313077B publication Critical patent/TWI313077B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094146538A 2004-12-27 2005-12-26 Microelectronic assembly with built-in thermoelectric cooler and method of fabricating same TWI313077B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/024,357 US8686277B2 (en) 2004-12-27 2004-12-27 Microelectronic assembly including built-in thermoelectric cooler and method of fabricating same

Publications (2)

Publication Number Publication Date
TW200637042A true TW200637042A (en) 2006-10-16
TWI313077B TWI313077B (en) 2009-08-01

Family

ID=36147629

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146538A TWI313077B (en) 2004-12-27 2005-12-26 Microelectronic assembly with built-in thermoelectric cooler and method of fabricating same

Country Status (8)

Country Link
US (2) US8686277B2 (zh)
EP (1) EP1834354B1 (zh)
JP (2) JP4922947B2 (zh)
KR (1) KR100897422B1 (zh)
CN (1) CN101091246B (zh)
SG (1) SG158173A1 (zh)
TW (1) TWI313077B (zh)
WO (1) WO2006072063A1 (zh)

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US8026567B2 (en) * 2008-12-22 2011-09-27 Taiwan Semiconductor Manufactuirng Co., Ltd. Thermoelectric cooler for semiconductor devices with TSV
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JP6191512B2 (ja) * 2014-03-06 2017-09-06 富士通株式会社 熱電変換素子及びその製造方法
CN105336848B (zh) * 2014-06-12 2018-01-09 中芯国际集成电路制造(上海)有限公司 Mram器件的形成方法
WO2017015640A1 (en) 2015-07-23 2017-01-26 Cepheid Thermal control device and methods of use
JP7052200B2 (ja) * 2016-03-24 2022-04-12 三菱マテリアル株式会社 熱電変換モジュール
CN108511404B (zh) * 2017-02-28 2020-03-10 华为技术有限公司 芯片封装系统
CN107968315A (zh) * 2017-12-14 2018-04-27 苏州矩阵光电有限公司 一种半导体激光器
CN111370396B (zh) * 2020-04-15 2021-07-20 广东鸿芯科技有限公司 一种具有恒温控制功能的光电模块组件及其制造方法
CN111370993A (zh) * 2020-04-15 2020-07-03 广东鸿芯科技有限公司 一种具有恒温控制功能的半导体激光器件及其制造方法
US11649525B2 (en) 2020-05-01 2023-05-16 Birmingham Technologies, Inc. Single electron transistor (SET), circuit containing set and energy harvesting device, and fabrication method
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US11985895B2 (en) * 2021-05-17 2024-05-14 The United States Of America As Represented By The Secretary Of The Army Thermoelectrically actuated phase change thermal energy storage (TES) module
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Also Published As

Publication number Publication date
KR100897422B1 (ko) 2009-05-14
WO2006072063A1 (en) 2006-07-06
EP1834354A1 (en) 2007-09-19
JP2012099836A (ja) 2012-05-24
JP2008526035A (ja) 2008-07-17
JP5846894B2 (ja) 2016-01-20
KR20070095377A (ko) 2007-09-28
SG158173A1 (en) 2010-01-29
EP1834354B1 (en) 2020-11-25
JP4922947B2 (ja) 2012-04-25
CN101091246A (zh) 2007-12-19
US20060137732A1 (en) 2006-06-29
CN101091246B (zh) 2010-10-06
TWI313077B (en) 2009-08-01
US20150332987A1 (en) 2015-11-19
US8686277B2 (en) 2014-04-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees