TW200636725A - Non-volatile memory device and method of preventing hot electron program disturb phenomenon - Google Patents

Non-volatile memory device and method of preventing hot electron program disturb phenomenon

Info

Publication number
TW200636725A
TW200636725A TW094146410A TW94146410A TW200636725A TW 200636725 A TW200636725 A TW 200636725A TW 094146410 A TW094146410 A TW 094146410A TW 94146410 A TW94146410 A TW 94146410A TW 200636725 A TW200636725 A TW 200636725A
Authority
TW
Taiwan
Prior art keywords
memory device
volatile memory
hot electron
word lines
program disturb
Prior art date
Application number
TW094146410A
Other languages
English (en)
Other versions
TWI303429B (en
Inventor
Seok-Jin Joo
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200636725A publication Critical patent/TW200636725A/zh
Application granted granted Critical
Publication of TWI303429B publication Critical patent/TWI303429B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
TW094146410A 2005-04-11 2005-12-23 Non-volatile memory device and method of preventing hot electron program disturb phenomenon TWI303429B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050030048A KR100680462B1 (ko) 2005-04-11 2005-04-11 비휘발성 메모리 장치 및 그것의 핫 일렉트론 프로그램디스터브 방지방법

Publications (2)

Publication Number Publication Date
TW200636725A true TW200636725A (en) 2006-10-16
TWI303429B TWI303429B (en) 2008-11-21

Family

ID=37026446

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146410A TWI303429B (en) 2005-04-11 2005-12-23 Non-volatile memory device and method of preventing hot electron program disturb phenomenon

Country Status (6)

Country Link
US (3) US7304894B2 (zh)
JP (3) JP2006294205A (zh)
KR (1) KR100680462B1 (zh)
CN (1) CN100511483C (zh)
DE (1) DE102005057553A1 (zh)
TW (1) TWI303429B (zh)

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TWI404069B (zh) * 2007-12-26 2013-08-01 Micron Technology Inc 記憶體單元串，具有記憶體單元串之記憶體裝置，及其程式化方法
TWI419308B (zh) * 2011-12-16 2013-12-11 Toshiba Kk 半導體儲存裝置、非揮發性半導體記憶體測試方法、及媒體

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US7466590B2 (en) * 2004-02-06 2008-12-16 Sandisk Corporation Self-boosting method for flash memory cells
US7428165B2 (en) 2006-03-30 2008-09-23 Sandisk Corporation Self-boosting method with suppression of high lateral electric fields
US7511995B2 (en) 2006-03-30 2009-03-31 Sandisk Corporation Self-boosting system with suppression of high lateral electric fields
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
US7586157B2 (en) * 2006-10-17 2009-09-08 Sandisk Corporation Non-volatile memory with dual voltage select gate structure
US7691710B2 (en) * 2006-10-17 2010-04-06 Sandisk Corporation Fabricating non-volatile memory with dual voltage select gate structure
WO2008048812A1 (en) * 2006-10-17 2008-04-24 Sandisk Corporation Fabricating non-volatile memory with dual voltage select gate structure
KR100888616B1 (ko) * 2006-11-28 2009-03-17 삼성전자주식회사 소거 동작 전에 프리 프로그램 동작을 수행하는 낸드플래시 메모리 및 그것의 소거 방법
US7511996B2 (en) * 2006-11-30 2009-03-31 Mosaid Technologies Incorporated Flash memory program inhibit scheme
US7450430B2 (en) * 2006-12-29 2008-11-11 Sandisk Corporation Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
US7554853B2 (en) * 2006-12-30 2009-06-30 Sandisk Corporation Non-volatile storage with bias based on selective word line
US7525843B2 (en) * 2006-12-30 2009-04-28 Sandisk Corporation Non-volatile storage with adaptive body bias
US7468920B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Applying adaptive body bias to non-volatile storage
US7583539B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Non-volatile storage with bias for temperature compensation
US7583535B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Biasing non-volatile storage to compensate for temperature variations
US7468919B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Biasing non-volatile storage based on selected word line
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US7738291B2 (en) * 2007-03-12 2010-06-15 Micron Technology, Inc. Memory page boosting method, device and system
US7606072B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop
KR100889780B1 (ko) * 2007-04-24 2009-03-20 삼성전자주식회사 패스 전압 윈도우를 향상시킬 수 있는 플래시 메모리 장치및 그것의 프로그램 방법
US7606071B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Compensating source voltage drop in non-volatile storage
US7577026B2 (en) * 2007-05-07 2009-08-18 Sandisk Corporation Source and drain side early boosting using local self boosting for non-volatile storage
US7463522B2 (en) * 2007-05-07 2008-12-09 Sandisk Corporation Non-volatile storage with boosting using channel isolation switching
US7460404B1 (en) * 2007-05-07 2008-12-02 Sandisk Corporation Boosting for non-volatile storage using channel isolation switching
JP2008300019A (ja) * 2007-06-04 2008-12-11 Toshiba Corp 不揮発性半導体記憶装置
KR101416740B1 (ko) 2007-11-26 2014-07-09 삼성전자주식회사 플래시 메모리 장치 및 그것의 읽기 방법
KR100922977B1 (ko) 2007-12-27 2009-10-22 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
DE102007062929A1 (de) 2007-12-28 2009-07-02 Rodenstock Gmbh Verfahren zur Berechnung und Optimierung eines Brillenglaspaares unter Berücksichtigung binokularer Eigenschaften
KR100936879B1 (ko) 2007-12-28 2010-01-14 주식회사 하이닉스반도체 불휘발성 메모리 장치의 소거 방법 및 소프트 프로그램방법
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KR101407361B1 (ko) 2008-04-14 2014-06-13 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
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US8194455B2 (en) 2009-02-06 2012-06-05 Samsung Electronics Co., Ltd. Methods for programming nonvolatile memory devices
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US7916546B2 (en) * 2009-04-27 2011-03-29 Micron Technology, Inc. Methods for programming a memory device and memory devices using inhibit voltages that are less than a supply voltage
JP4750906B2 (ja) * 2009-04-30 2011-08-17 Ｐｏｗｅｒｃｈｉｐ株式会社 Ｎａｎｄフラッシュメモリデバイスのプログラミング方法
US8139419B2 (en) 2009-12-08 2012-03-20 Micron Technology, Inc. Programming methods and memories
US8755227B2 (en) * 2012-01-30 2014-06-17 Phison Electronics Corp. NAND flash memory unit, NAND flash memory array, and methods for operating them
KR102062314B1 (ko) * 2013-03-15 2020-01-03 삼성전자주식회사 불휘발성 메모리 장치 및 프로그램 방법
KR102070667B1 (ko) 2013-08-26 2020-01-29 삼성전자주식회사 비휘발성 메모리 장치의 구동 방법
US8988945B1 (en) 2013-10-10 2015-03-24 Sandisk Technologies Inc. Programming time improvement for non-volatile memory
US9361993B1 (en) 2015-01-21 2016-06-07 Sandisk Technologies Inc. Method of reducing hot electron injection type of read disturb in memory
US10832765B2 (en) * 2018-06-29 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Variation tolerant read assist circuit for SRAM
CN111951865B (zh) * 2019-05-14 2023-04-07 兆易创新科技集团股份有限公司 一种非易失存储器读处理方法及装置
CN111951869B (zh) * 2019-05-14 2022-10-18 兆易创新科技集团股份有限公司 一种非易失存储器读处理方法及装置
CN111951854B (zh) * 2019-05-14 2022-10-18 兆易创新科技集团股份有限公司 一种非易失存储器写处理方法及装置
CN111951860B (zh) * 2019-05-14 2022-10-18 兆易创新科技集团股份有限公司 一种非易失存储器写处理方法及装置
JP7332343B2 (ja) * 2019-05-28 2023-08-23 キオクシア株式会社 半導体記憶装置
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TWI404069B (zh) * 2007-12-26 2013-08-01 Micron Technology Inc 記憶體單元串，具有記憶體單元串之記憶體裝置，及其程式化方法
TWI419308B (zh) * 2011-12-16 2013-12-11 Toshiba Kk 半導體儲存裝置、非揮發性半導體記憶體測試方法、及媒體

Also Published As

Publication number Publication date
US20080055982A1 (en) 2008-03-06
KR20060107697A (ko) 2006-10-16
CN100511483C (zh) 2009-07-08
CN1848297A (zh) 2006-10-18
JP2006294205A (ja) 2006-10-26
US7596019B2 (en) 2009-09-29
US20060227613A1 (en) 2006-10-12
DE102005057553A1 (de) 2006-10-12
JP2011238348A (ja) 2011-11-24
US7428166B2 (en) 2008-09-23
KR100680462B1 (ko) 2007-02-08
JP2011204357A (ja) 2011-10-13
TWI303429B (en) 2008-11-21
US20080055981A1 (en) 2008-03-06
US7304894B2 (en) 2007-12-04

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