TW200634119A - Method and composition for polishing a substrate - Google Patents

Method and composition for polishing a substrate

Info

Publication number
TW200634119A
TW200634119A TW095103796A TW95103796A TW200634119A TW 200634119 A TW200634119 A TW 200634119A TW 095103796 A TW095103796 A TW 095103796A TW 95103796 A TW95103796 A TW 95103796A TW 200634119 A TW200634119 A TW 200634119A
Authority
TW
Taiwan
Prior art keywords
composition
substrate surface
polishing
substrate
polishing compositions
Prior art date
Application number
TW095103796A
Other languages
English (en)
Inventor
Jun-Zi Zhao
Feng Q Liu
You Wang
Stan D Tsai
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200634119A publication Critical patent/TW200634119A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Electrochemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095103796A 2005-02-07 2006-02-03 Method and composition for polishing a substrate TW200634119A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65067605P 2005-02-07 2005-02-07

Publications (1)

Publication Number Publication Date
TW200634119A true TW200634119A (en) 2006-10-01

Family

ID=36581660

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095103796A TW200634119A (en) 2005-02-07 2006-02-03 Method and composition for polishing a substrate

Country Status (3)

Country Link
US (2) US20060175298A1 (zh)
TW (1) TW200634119A (zh)
WO (1) WO2006086265A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107557786A (zh) * 2015-07-16 2018-01-09 宁波科廷光电科技有限公司 用于包含银纳米线的透明导电层的蚀刻组合物

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278522A (ja) * 2005-03-28 2006-10-12 Seimi Chem Co Ltd 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
KR101134590B1 (ko) * 2005-03-28 2012-04-09 삼성코닝정밀소재 주식회사 분산 안정성이 우수한 연마 슬러리의 제조방법
US20070135024A1 (en) * 2005-12-08 2007-06-14 Itsuki Kobata Polishing pad and polishing apparatus
US20070221495A1 (en) * 2006-03-23 2007-09-27 Applied Materials, Inc. Electropolish assisted electrochemical mechanical polishing apparatus
TW200745313A (en) * 2006-05-26 2007-12-16 Wako Pure Chem Ind Ltd Substrate etching liquid
US20080096385A1 (en) * 2006-09-27 2008-04-24 Hynix Semiconductor Inc. Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same
EP2125985B1 (en) * 2006-12-29 2012-08-15 LG Chem, Ltd. Cmp slurry composition for forming metal wiring line
US8047899B2 (en) * 2007-07-26 2011-11-01 Macronix International Co., Ltd. Pad and method for chemical mechanical polishing
US20100096360A1 (en) * 2008-10-20 2010-04-22 Applied Materials, Inc. Compositions and methods for barrier layer polishing
JP2010219406A (ja) * 2009-03-18 2010-09-30 Tokyo Electron Ltd 化学的機械研磨方法
EP2427522B1 (en) * 2009-05-06 2017-03-01 Basf Se An aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
WO2011064734A1 (en) * 2009-11-30 2011-06-03 Basf Se Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process
US9005472B2 (en) 2010-02-24 2015-04-14 Basf Se Aqueous polishing agent and graft copolymers and their use in a process for polishing patterned and unstructured metal surfaces
JP2013533614A (ja) * 2010-06-01 2013-08-22 アプライド マテリアルズ インコーポレイテッド 銅ウエハ研磨の化学的平坦化
KR20120019242A (ko) * 2010-08-25 2012-03-06 삼성전자주식회사 연마용 슬러리 및 이를 이용하는 반도체 장치의 제조 방법
US9121101B2 (en) * 2011-06-30 2015-09-01 Asahi Kasei E-Materials Corporation Etchant and etching method using the same
CN103649373B (zh) * 2011-07-04 2017-04-12 三菱瓦斯化学株式会社 铜或以铜为主要成分的化合物的蚀刻液
CN103160909B (zh) * 2011-12-15 2016-04-27 比亚迪股份有限公司 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法
CN104508072A (zh) * 2012-02-15 2015-04-08 安格斯公司 用于cmp后去除的组合物及使用方法
JP6135999B2 (ja) * 2012-04-10 2017-05-31 三菱瓦斯化学株式会社 銅およびモリブデンを含む多層膜のエッチングに使用される液体組成物、およびそれを用いたエッチング方法
US20130338227A1 (en) 2012-06-13 2013-12-19 Marie-Esther Saint Victor Green Glycine Betaine Derivative Compounds And Compositions Containing Same
JP5909157B2 (ja) * 2012-06-28 2016-04-26 株式会社東芝 半導体装置の製造方法
US9688912B2 (en) * 2012-07-27 2017-06-27 Fujifilm Corporation Etching method, and etching liquid to be used therein and method of producing a semiconductor substrate product using the same
WO2015129342A1 (ja) * 2014-02-26 2015-09-03 株式会社フジミインコーポレーテッド 研磨用組成物
US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US20150259804A1 (en) * 2014-03-12 2015-09-17 Cabot Microelectronics Corporation Compositions and methods for cmp of tungsten materials
US9207824B2 (en) 2014-03-25 2015-12-08 Hailiang Wang Systems and methods for touch sensors on polymer lenses
KR102205699B1 (ko) * 2014-04-11 2021-01-21 삼성전자주식회사 양자점을 갖는 전자소자 및 그 제조방법
JP6817186B6 (ja) * 2014-07-15 2021-02-10 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ 化学機械研磨（ｃｍｐ）組成物
US10747372B2 (en) 2015-03-25 2020-08-18 Hailiang Wang Systems and high throughput methods for touch sensors
JP6589622B2 (ja) * 2015-12-22 2019-10-16 日立化成株式会社 研磨液、研磨方法、半導体基板及び電子機器
KR101761789B1 (ko) * 2015-12-24 2017-07-26 주식회사 케이씨텍 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물
JP6751326B2 (ja) * 2016-09-16 2020-09-02 キオクシア株式会社 基板処理装置および半導体装置の製造方法
EP3700990B1 (en) * 2017-10-25 2023-03-29 Saint-Gobain Ceramics & Plastics, Inc. Composition for conducting material removal operations and method for forming same
US11993729B2 (en) * 2017-11-22 2024-05-28 Basf Se Chemical mechanical polishing composition
CN115181866B (zh) * 2022-07-25 2023-05-30 中南大学 一种联合浸出剂及其在正极浸出中的应用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
JP2005539384A (ja) * 2002-09-16 2005-12-22 アプライド　マテリアルズ　インコーポレイテッド 電気化学的に支援されたｃｍｐにおける除去プロファイルの制御
US6893328B2 (en) * 2003-04-23 2005-05-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Conductive polishing pad with anode and cathode
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
TW200527521A (en) * 2003-10-31 2005-08-16 Du Pont Membrane-mediated electropolishing
US20060219663A1 (en) * 2005-03-31 2006-10-05 Applied Materials, Inc. Metal CMP process on one or more polishing stations using slurries with oxidizers
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107557786A (zh) * 2015-07-16 2018-01-09 宁波科廷光电科技有限公司 用于包含银纳米线的透明导电层的蚀刻组合物

Also Published As

Publication number Publication date
US20060175298A1 (en) 2006-08-10
US20080035882A1 (en) 2008-02-14
WO2006086265A2 (en) 2006-08-17
WO2006086265A3 (en) 2006-09-28

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