TW200634119A - Method and composition for polishing a substrate - Google Patents
Method and composition for polishing a substrateInfo
- Publication number
- TW200634119A TW200634119A TW095103796A TW95103796A TW200634119A TW 200634119 A TW200634119 A TW 200634119A TW 095103796 A TW095103796 A TW 095103796A TW 95103796 A TW95103796 A TW 95103796A TW 200634119 A TW200634119 A TW 200634119A
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- substrate surface
- polishing
- substrate
- polishing compositions
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000005498 polishing Methods 0.000 title abstract 3
- 230000004888 barrier function Effects 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 239000002253 acid Substances 0.000 abstract 1
- 239000002738 chelating agent Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 239000003002 pH adjusting agent Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Electrochemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Dispersion Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65067605P | 2005-02-07 | 2005-02-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200634119A true TW200634119A (en) | 2006-10-01 |
Family
ID=36581660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095103796A TW200634119A (en) | 2005-02-07 | 2006-02-03 | Method and composition for polishing a substrate |
Country Status (3)
Country | Link |
---|---|
US (2) | US20060175298A1 (zh) |
TW (1) | TW200634119A (zh) |
WO (1) | WO2006086265A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107557786A (zh) * | 2015-07-16 | 2018-01-09 | 宁波科廷光电科技有限公司 | 用于包含银纳米线的透明导电层的蚀刻组合物 |
Families Citing this family (36)
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---|---|---|---|---|
JP2006278522A (ja) * | 2005-03-28 | 2006-10-12 | Seimi Chem Co Ltd | 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 |
KR101134590B1 (ko) * | 2005-03-28 | 2012-04-09 | 삼성코닝정밀소재 주식회사 | 분산 안정성이 우수한 연마 슬러리의 제조방법 |
US20070135024A1 (en) * | 2005-12-08 | 2007-06-14 | Itsuki Kobata | Polishing pad and polishing apparatus |
US20070221495A1 (en) * | 2006-03-23 | 2007-09-27 | Applied Materials, Inc. | Electropolish assisted electrochemical mechanical polishing apparatus |
TW200745313A (en) * | 2006-05-26 | 2007-12-16 | Wako Pure Chem Ind Ltd | Substrate etching liquid |
US20080096385A1 (en) * | 2006-09-27 | 2008-04-24 | Hynix Semiconductor Inc. | Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same |
EP2125985B1 (en) * | 2006-12-29 | 2012-08-15 | LG Chem, Ltd. | Cmp slurry composition for forming metal wiring line |
US8047899B2 (en) * | 2007-07-26 | 2011-11-01 | Macronix International Co., Ltd. | Pad and method for chemical mechanical polishing |
US20100096360A1 (en) * | 2008-10-20 | 2010-04-22 | Applied Materials, Inc. | Compositions and methods for barrier layer polishing |
JP2010219406A (ja) * | 2009-03-18 | 2010-09-30 | Tokyo Electron Ltd | 化学的機械研磨方法 |
EP2427522B1 (en) * | 2009-05-06 | 2017-03-01 | Basf Se | An aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces |
WO2011064734A1 (en) * | 2009-11-30 | 2011-06-03 | Basf Se | Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process |
US9005472B2 (en) | 2010-02-24 | 2015-04-14 | Basf Se | Aqueous polishing agent and graft copolymers and their use in a process for polishing patterned and unstructured metal surfaces |
JP2013533614A (ja) * | 2010-06-01 | 2013-08-22 | アプライド マテリアルズ インコーポレイテッド | 銅ウエハ研磨の化学的平坦化 |
KR20120019242A (ko) * | 2010-08-25 | 2012-03-06 | 삼성전자주식회사 | 연마용 슬러리 및 이를 이용하는 반도체 장치의 제조 방법 |
US9121101B2 (en) * | 2011-06-30 | 2015-09-01 | Asahi Kasei E-Materials Corporation | Etchant and etching method using the same |
CN103649373B (zh) * | 2011-07-04 | 2017-04-12 | 三菱瓦斯化学株式会社 | 铜或以铜为主要成分的化合物的蚀刻液 |
CN103160909B (zh) * | 2011-12-15 | 2016-04-27 | 比亚迪股份有限公司 | 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法 |
CN104508072A (zh) * | 2012-02-15 | 2015-04-08 | 安格斯公司 | 用于cmp后去除的组合物及使用方法 |
JP6135999B2 (ja) * | 2012-04-10 | 2017-05-31 | 三菱瓦斯化学株式会社 | 銅およびモリブデンを含む多層膜のエッチングに使用される液体組成物、およびそれを用いたエッチング方法 |
US20130338227A1 (en) | 2012-06-13 | 2013-12-19 | Marie-Esther Saint Victor | Green Glycine Betaine Derivative Compounds And Compositions Containing Same |
JP5909157B2 (ja) * | 2012-06-28 | 2016-04-26 | 株式会社東芝 | 半導体装置の製造方法 |
US9688912B2 (en) * | 2012-07-27 | 2017-06-27 | Fujifilm Corporation | Etching method, and etching liquid to be used therein and method of producing a semiconductor substrate product using the same |
WO2015129342A1 (ja) * | 2014-02-26 | 2015-09-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US9238754B2 (en) * | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US20150259804A1 (en) * | 2014-03-12 | 2015-09-17 | Cabot Microelectronics Corporation | Compositions and methods for cmp of tungsten materials |
US9207824B2 (en) | 2014-03-25 | 2015-12-08 | Hailiang Wang | Systems and methods for touch sensors on polymer lenses |
KR102205699B1 (ko) * | 2014-04-11 | 2021-01-21 | 삼성전자주식회사 | 양자점을 갖는 전자소자 및 그 제조방법 |
JP6817186B6 (ja) * | 2014-07-15 | 2021-02-10 | ビーエイエスエフ・ソシエタス・エウロパエアBasf Se | 化学機械研磨(cmp)組成物 |
US10747372B2 (en) | 2015-03-25 | 2020-08-18 | Hailiang Wang | Systems and high throughput methods for touch sensors |
JP6589622B2 (ja) * | 2015-12-22 | 2019-10-16 | 日立化成株式会社 | 研磨液、研磨方法、半導体基板及び電子機器 |
KR101761789B1 (ko) * | 2015-12-24 | 2017-07-26 | 주식회사 케이씨텍 | 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물 |
JP6751326B2 (ja) * | 2016-09-16 | 2020-09-02 | キオクシア株式会社 | 基板処理装置および半導体装置の製造方法 |
EP3700990B1 (en) * | 2017-10-25 | 2023-03-29 | Saint-Gobain Ceramics & Plastics, Inc. | Composition for conducting material removal operations and method for forming same |
US11993729B2 (en) * | 2017-11-22 | 2024-05-28 | Basf Se | Chemical mechanical polishing composition |
CN115181866B (zh) * | 2022-07-25 | 2023-05-30 | 中南大学 | 一种联合浸出剂及其在正极浸出中的应用 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6899804B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
US7128825B2 (en) * | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7582564B2 (en) * | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
US7232514B2 (en) * | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
JP2005539384A (ja) * | 2002-09-16 | 2005-12-22 | アプライド マテリアルズ インコーポレイテッド | 電気化学的に支援されたcmpにおける除去プロファイルの制御 |
US6893328B2 (en) * | 2003-04-23 | 2005-05-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Conductive polishing pad with anode and cathode |
US7390429B2 (en) * | 2003-06-06 | 2008-06-24 | Applied Materials, Inc. | Method and composition for electrochemical mechanical polishing processing |
TW200527521A (en) * | 2003-10-31 | 2005-08-16 | Du Pont | Membrane-mediated electropolishing |
US20060219663A1 (en) * | 2005-03-31 | 2006-10-05 | Applied Materials, Inc. | Metal CMP process on one or more polishing stations using slurries with oxidizers |
US20060249395A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Material, Inc. | Process and composition for electrochemical mechanical polishing |
-
2006
- 2006-02-02 WO PCT/US2006/004013 patent/WO2006086265A2/en active Application Filing
- 2006-02-03 TW TW095103796A patent/TW200634119A/zh unknown
- 2006-02-07 US US11/350,051 patent/US20060175298A1/en not_active Abandoned
-
2007
- 2007-10-23 US US11/877,344 patent/US20080035882A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107557786A (zh) * | 2015-07-16 | 2018-01-09 | 宁波科廷光电科技有限公司 | 用于包含银纳米线的透明导电层的蚀刻组合物 |
Also Published As
Publication number | Publication date |
---|---|
US20060175298A1 (en) | 2006-08-10 |
US20080035882A1 (en) | 2008-02-14 |
WO2006086265A2 (en) | 2006-08-17 |
WO2006086265A3 (en) | 2006-09-28 |
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