TW200633285A - N-type semiconductor materials for thin film transistors - Google Patents

N-type semiconductor materials for thin film transistors

Info

Publication number
TW200633285A
TW200633285A TW094144605A TW94144605A TW200633285A TW 200633285 A TW200633285 A TW 200633285A TW 094144605 A TW094144605 A TW 094144605A TW 94144605 A TW94144605 A TW 94144605A TW 200633285 A TW200633285 A TW 200633285A
Authority
TW
Taiwan
Prior art keywords
thin film
type semiconductor
film transistors
semiconductor materials
film transistor
Prior art date
Application number
TW094144605A
Other languages
English (en)
Chinese (zh)
Inventor
Deepak Shukla
Diane C Freeman
Shelby F Nelson
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of TW200633285A publication Critical patent/TW200633285A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
    • C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
TW094144605A 2004-12-17 2005-12-16 N-type semiconductor materials for thin film transistors TW200633285A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/015,897 US7326956B2 (en) 2004-12-17 2004-12-17 Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors

Publications (1)

Publication Number Publication Date
TW200633285A true TW200633285A (en) 2006-09-16

Family

ID=36588362

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144605A TW200633285A (en) 2004-12-17 2005-12-16 N-type semiconductor materials for thin film transistors

Country Status (7)

Country Link
US (1) US7326956B2 (https=)
EP (1) EP1825533A2 (https=)
JP (1) JP2008524846A (https=)
KR (1) KR20070098807A (https=)
CN (1) CN101084589A (https=)
TW (1) TW200633285A (https=)
WO (1) WO2006065548A2 (https=)

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US7198977B2 (en) * 2004-12-21 2007-04-03 Eastman Kodak Company N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
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US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
WO2007146250A2 (en) * 2006-06-12 2007-12-21 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
EP2089398A2 (en) * 2006-10-25 2009-08-19 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
WO2008063609A2 (en) * 2006-11-17 2008-05-29 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
CN101622253B (zh) * 2007-01-08 2015-04-29 破立纪元有限公司 用于制备基于芳烃-双（二羧酰亚胺）的半导体材料的方法和用于制备它们的相关中间体
CN100456517C (zh) * 2007-01-23 2009-01-28 中国科学院长春应用化学研究所 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用
WO2008091670A2 (en) * 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
KR101012542B1 (ko) * 2008-12-12 2011-02-07 재단법인대구경북과학기술원 고분자 화합물 및 그를 포함하는 태양전지
TWI431005B (zh) 2009-10-29 2014-03-21 Dainichiseika Color Chem Perylene tetracarboxyldiimide derivatives
US9133193B2 (en) 2009-10-29 2015-09-15 Dainichiseika Color & Chemicals Mfg. Co., Ltd. Organic semiconductor material, organic semiconductor thin film, and organic thin film transistor
US8283469B2 (en) * 2010-03-24 2012-10-09 National Tsing Hua University Perylene diimide derivative and organic semiconductor element using the same material
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
CN103081149B (zh) 2010-08-29 2016-07-06 国立大学法人信州大学 有机半导体微粒材料、有机半导体薄膜、有机半导体膜形成用分散液、有机半导体薄膜的制造方法及有机薄膜晶体管
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EP2681217A1 (en) 2011-03-03 2014-01-08 Basf Se Perylene-based semiconducting materials
JP5744323B2 (ja) * 2011-05-11 2015-07-08 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ハロゲン化ペリレンベースの半導体材料
CN103764787A (zh) 2011-08-12 2014-04-30 巴斯夫欧洲公司 氟化苝基半导体材料
CN105862133B (zh) * 2015-01-23 2021-04-13 国家纳米科学中心 一种n型有机半导体晶体材料及其制备方法和用途
JP7464397B2 (ja) * 2020-01-31 2024-04-09 保土谷化学工業株式会社 ペリレン誘導体化合物、該化合物を用いた有機半導体用組成物、該有機半導体用組成物を用いた有機薄膜トランジスタ
CN111892605B (zh) * 2020-06-10 2021-11-02 中国科学院化学研究所 新型五元环苝二酰亚胺分子材料及其制备方法与应用
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Also Published As

Publication number Publication date
US20060131564A1 (en) 2006-06-22
JP2008524846A (ja) 2008-07-10
CN101084589A (zh) 2007-12-05
KR20070098807A (ko) 2007-10-05
WO2006065548A2 (en) 2006-06-22
WO2006065548A3 (en) 2007-01-04
US7326956B2 (en) 2008-02-05
EP1825533A2 (en) 2007-08-29

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