TW200632129A - Method for forming tantalum nitride film - Google Patents

Method for forming tantalum nitride film

Info

Publication number
TW200632129A
TW200632129A TW095106832A TW95106832A TW200632129A TW 200632129 A TW200632129 A TW 200632129A TW 095106832 A TW095106832 A TW 095106832A TW 95106832 A TW95106832 A TW 95106832A TW 200632129 A TW200632129 A TW 200632129A
Authority
TW
Taiwan
Prior art keywords
film
tantalum nitride
nitride film
tantalum
atom
Prior art date
Application number
TW095106832A
Other languages
English (en)
Chinese (zh)
Inventor
Narishi Gonohe
Satoru Toyoda
Harunori Ushikawa
Tomoyasu Kondo
Kyuzo Nakamura
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200632129A publication Critical patent/TW200632129A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
TW095106832A 2005-03-03 2006-03-01 Method for forming tantalum nitride film TW200632129A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005059084A JP4931172B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Publications (1)

Publication Number Publication Date
TW200632129A true TW200632129A (en) 2006-09-16

Family

ID=36941291

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095106832A TW200632129A (en) 2005-03-03 2006-03-01 Method for forming tantalum nitride film

Country Status (6)

Country Link
US (1) US20090162565A1 (https=)
JP (1) JP4931172B2 (https=)
KR (1) KR100911644B1 (https=)
CN (1) CN101091001B (https=)
TW (1) TW200632129A (https=)
WO (1) WO2006093261A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020247237A1 (en) 2019-06-05 2020-12-10 Versum Materials Us, Llc New group v and vi transition metal precursors for thin film deposition
US11728177B2 (en) * 2021-02-11 2023-08-15 Applied Materials, Inc. Systems and methods for nitride-containing film removal

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100200739B1 (ko) * 1996-10-16 1999-06-15 윤종용 장벽금속막 형성방법
CN1185025A (zh) * 1996-12-10 1998-06-17 联华电子股份有限公司 低压化学气相沉积Ta2O5的低漏电流薄膜的制作方法
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
CN1265449C (zh) * 2002-05-17 2006-07-19 台湾积体电路制造股份有限公司 铜金属化制作工艺的低电阻值阻挡层的制造方法
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
JP2006241523A (ja) 2006-09-14
WO2006093261A1 (ja) 2006-09-08
KR20070084621A (ko) 2007-08-24
CN101091001A (zh) 2007-12-19
CN101091001B (zh) 2010-06-16
JP4931172B2 (ja) 2012-05-16
US20090162565A1 (en) 2009-06-25
KR100911644B1 (ko) 2009-08-10

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