KR100911644B1 - 탄탈 질화물막의 형성 방법 - Google Patents

탄탈 질화물막의 형성 방법 Download PDF

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Publication number
KR100911644B1
KR100911644B1 KR1020077012310A KR20077012310A KR100911644B1 KR 100911644 B1 KR100911644 B1 KR 100911644B1 KR 1020077012310 A KR1020077012310 A KR 1020077012310A KR 20077012310 A KR20077012310 A KR 20077012310A KR 100911644 B1 KR100911644 B1 KR 100911644B1
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South Korea
Prior art keywords
tantalum
film
gas
nitride film
compound
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Expired - Fee Related
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KR1020077012310A
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English (en)
Korean (ko)
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KR20070084621A (ko
Inventor
나리시 고노헤
사토루 도요다
하루노리 우시카와
도모야스 곤도
규조 나카무라
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가부시키가이샤 알박
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Publication of KR100911644B1 publication Critical patent/KR100911644B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020077012310A 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법 Expired - Fee Related KR100911644B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005059084A JP4931172B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
JPJP-P-2005-00059084 2005-03-03

Publications (2)

Publication Number Publication Date
KR20070084621A KR20070084621A (ko) 2007-08-24
KR100911644B1 true KR100911644B1 (ko) 2009-08-10

Family

ID=36941291

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077012310A Expired - Fee Related KR100911644B1 (ko) 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법

Country Status (6)

Country Link
US (1) US20090162565A1 (https=)
JP (1) JP4931172B2 (https=)
KR (1) KR100911644B1 (https=)
CN (1) CN101091001B (https=)
TW (1) TW200632129A (https=)
WO (1) WO2006093261A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020247237A1 (en) 2019-06-05 2020-12-10 Versum Materials Us, Llc New group v and vi transition metal precursors for thin film deposition
US11728177B2 (en) * 2021-02-11 2023-08-15 Applied Materials, Inc. Systems and methods for nitride-containing film removal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135155A (ja) 1996-10-16 1998-05-22 Samsung Electron Co Ltd 障壁金属膜の形成方法
JP2003342732A (ja) 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1185025A (zh) * 1996-12-10 1998-06-17 联华电子股份有限公司 低压化学气相沉积Ta2O5的低漏电流薄膜的制作方法
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
CN1265449C (zh) * 2002-05-17 2006-07-19 台湾积体电路制造股份有限公司 铜金属化制作工艺的低电阻值阻挡层的制造方法
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135155A (ja) 1996-10-16 1998-05-22 Samsung Electron Co Ltd 障壁金属膜の形成方法
JP2003342732A (ja) 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Cho, K.-N. et al., Jpn. J. Appl. Phys. Vol.37, pp.6502-6505.
Park, S. G. et al., Jpn. J. Appl. Phys. Vol.43, pp.303-304.

Also Published As

Publication number Publication date
JP2006241523A (ja) 2006-09-14
WO2006093261A1 (ja) 2006-09-08
KR20070084621A (ko) 2007-08-24
CN101091001A (zh) 2007-12-19
CN101091001B (zh) 2010-06-16
JP4931172B2 (ja) 2012-05-16
TW200632129A (en) 2006-09-16
US20090162565A1 (en) 2009-06-25

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