CN101091001B - 钽氮化物膜的形成方法 - Google Patents

钽氮化物膜的形成方法 Download PDF

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Publication number
CN101091001B
CN101091001B CN2006800014597A CN200680001459A CN101091001B CN 101091001 B CN101091001 B CN 101091001B CN 2006800014597 A CN2006800014597 A CN 2006800014597A CN 200680001459 A CN200680001459 A CN 200680001459A CN 101091001 B CN101091001 B CN 101091001B
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CN
China
Prior art keywords
film
tantalum
gas
tantalum nitride
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CN2006800014597A
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English (en)
Chinese (zh)
Other versions
CN101091001A (zh
Inventor
五户成史
丰田聪
牛川治宪
近藤智保
中村久三
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Ulvac Inc
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Ulvac Inc
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Publication date
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Publication of CN101091001A publication Critical patent/CN101091001A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
CN2006800014597A 2005-03-03 2006-03-03 钽氮化物膜的形成方法 Expired - Lifetime CN101091001B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005059084A JP4931172B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
JP059084/2005 2005-03-03
PCT/JP2006/304071 WO2006093261A1 (ja) 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法

Publications (2)

Publication Number Publication Date
CN101091001A CN101091001A (zh) 2007-12-19
CN101091001B true CN101091001B (zh) 2010-06-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800014597A Expired - Lifetime CN101091001B (zh) 2005-03-03 2006-03-03 钽氮化物膜的形成方法

Country Status (6)

Country Link
US (1) US20090162565A1 (https=)
JP (1) JP4931172B2 (https=)
KR (1) KR100911644B1 (https=)
CN (1) CN101091001B (https=)
TW (1) TW200632129A (https=)
WO (1) WO2006093261A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020247237A1 (en) 2019-06-05 2020-12-10 Versum Materials Us, Llc New group v and vi transition metal precursors for thin film deposition
US11728177B2 (en) * 2021-02-11 2023-08-15 Applied Materials, Inc. Systems and methods for nitride-containing film removal

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1185025A (zh) * 1996-12-10 1998-06-17 联华电子股份有限公司 低压化学气相沉积Ta2O5的低漏电流薄膜的制作方法
US6013576A (en) * 1996-10-16 2000-01-11 Samsung Electronics Co., Ltd. Methods for forming an amorphous tantalum nitride film
CN1458680A (zh) * 2002-05-17 2003-11-26 台湾积体电路制造股份有限公司 铜金属化制作工艺的低电阻值阻挡层的制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013576A (en) * 1996-10-16 2000-01-11 Samsung Electronics Co., Ltd. Methods for forming an amorphous tantalum nitride film
CN1185025A (zh) * 1996-12-10 1998-06-17 联华电子股份有限公司 低压化学气相沉积Ta2O5的低漏电流薄膜的制作方法
CN1458680A (zh) * 2002-05-17 2003-11-26 台湾积体电路制造股份有限公司 铜金属化制作工艺的低电阻值阻挡层的制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特開2003-342732A 2003.12.03

Also Published As

Publication number Publication date
JP2006241523A (ja) 2006-09-14
WO2006093261A1 (ja) 2006-09-08
KR20070084621A (ko) 2007-08-24
CN101091001A (zh) 2007-12-19
JP4931172B2 (ja) 2012-05-16
TW200632129A (en) 2006-09-16
US20090162565A1 (en) 2009-06-25
KR100911644B1 (ko) 2009-08-10

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Granted publication date: 20100616