JP4931172B2 - タンタル窒化物膜の形成方法 - Google Patents

タンタル窒化物膜の形成方法 Download PDF

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Publication number
JP4931172B2
JP4931172B2 JP2005059084A JP2005059084A JP4931172B2 JP 4931172 B2 JP4931172 B2 JP 4931172B2 JP 2005059084 A JP2005059084 A JP 2005059084A JP 2005059084 A JP2005059084 A JP 2005059084A JP 4931172 B2 JP4931172 B2 JP 4931172B2
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JP
Japan
Prior art keywords
film
tantalum
gas
tantalum nitride
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005059084A
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English (en)
Japanese (ja)
Other versions
JP2006241523A (ja
JP2006241523A5 (https=
Inventor
成史 五戸
聡 豊田
治憲 牛川
智保 近藤
久三 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2005059084A priority Critical patent/JP4931172B2/ja
Priority to TW095106832A priority patent/TW200632129A/zh
Priority to PCT/JP2006/304071 priority patent/WO2006093261A1/ja
Priority to US11/885,350 priority patent/US20090162565A1/en
Priority to CN2006800014597A priority patent/CN101091001B/zh
Priority to KR1020077012310A priority patent/KR100911644B1/ko
Publication of JP2006241523A publication Critical patent/JP2006241523A/ja
Publication of JP2006241523A5 publication Critical patent/JP2006241523A5/ja
Application granted granted Critical
Publication of JP4931172B2 publication Critical patent/JP4931172B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2005059084A 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法 Expired - Fee Related JP4931172B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005059084A JP4931172B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
TW095106832A TW200632129A (en) 2005-03-03 2006-03-01 Method for forming tantalum nitride film
US11/885,350 US20090162565A1 (en) 2005-03-03 2006-03-03 Method for Forming Tantalum Nitride Film
CN2006800014597A CN101091001B (zh) 2005-03-03 2006-03-03 钽氮化物膜的形成方法
PCT/JP2006/304071 WO2006093261A1 (ja) 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法
KR1020077012310A KR100911644B1 (ko) 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005059084A JP4931172B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Publications (3)

Publication Number Publication Date
JP2006241523A JP2006241523A (ja) 2006-09-14
JP2006241523A5 JP2006241523A5 (https=) 2008-04-24
JP4931172B2 true JP4931172B2 (ja) 2012-05-16

Family

ID=36941291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005059084A Expired - Fee Related JP4931172B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Country Status (6)

Country Link
US (1) US20090162565A1 (https=)
JP (1) JP4931172B2 (https=)
KR (1) KR100911644B1 (https=)
CN (1) CN101091001B (https=)
TW (1) TW200632129A (https=)
WO (1) WO2006093261A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020247237A1 (en) 2019-06-05 2020-12-10 Versum Materials Us, Llc New group v and vi transition metal precursors for thin film deposition
US11728177B2 (en) * 2021-02-11 2023-08-15 Applied Materials, Inc. Systems and methods for nitride-containing film removal

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100200739B1 (ko) * 1996-10-16 1999-06-15 윤종용 장벽금속막 형성방법
CN1185025A (zh) * 1996-12-10 1998-06-17 联华电子股份有限公司 低压化学气相沉积Ta2O5的低漏电流薄膜的制作方法
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
CN1265449C (zh) * 2002-05-17 2006-07-19 台湾积体电路制造股份有限公司 铜金属化制作工艺的低电阻值阻挡层的制造方法
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
JP2006241523A (ja) 2006-09-14
WO2006093261A1 (ja) 2006-09-08
KR20070084621A (ko) 2007-08-24
CN101091001A (zh) 2007-12-19
CN101091001B (zh) 2010-06-16
TW200632129A (en) 2006-09-16
US20090162565A1 (en) 2009-06-25
KR100911644B1 (ko) 2009-08-10

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