JP2006241523A5 - - Google Patents

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Publication number
JP2006241523A5
JP2006241523A5 JP2005059084A JP2005059084A JP2006241523A5 JP 2006241523 A5 JP2006241523 A5 JP 2006241523A5 JP 2005059084 A JP2005059084 A JP 2005059084A JP 2005059084 A JP2005059084 A JP 2005059084A JP 2006241523 A5 JP2006241523 A5 JP 2006241523A5
Authority
JP
Japan
Prior art keywords
tantalum
forming
nitride film
tantalum nitride
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005059084A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006241523A (ja
JP4931172B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2005059084A external-priority patent/JP4931172B2/ja
Priority to JP2005059084A priority Critical patent/JP4931172B2/ja
Priority to TW095106832A priority patent/TW200632129A/zh
Priority to PCT/JP2006/304071 priority patent/WO2006093261A1/ja
Priority to CN2006800014597A priority patent/CN101091001B/zh
Priority to US11/885,350 priority patent/US20090162565A1/en
Priority to KR1020077012310A priority patent/KR100911644B1/ko
Publication of JP2006241523A publication Critical patent/JP2006241523A/ja
Publication of JP2006241523A5 publication Critical patent/JP2006241523A5/ja
Publication of JP4931172B2 publication Critical patent/JP4931172B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005059084A 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法 Expired - Fee Related JP4931172B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005059084A JP4931172B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
TW095106832A TW200632129A (en) 2005-03-03 2006-03-01 Method for forming tantalum nitride film
US11/885,350 US20090162565A1 (en) 2005-03-03 2006-03-03 Method for Forming Tantalum Nitride Film
CN2006800014597A CN101091001B (zh) 2005-03-03 2006-03-03 钽氮化物膜的形成方法
PCT/JP2006/304071 WO2006093261A1 (ja) 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法
KR1020077012310A KR100911644B1 (ko) 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005059084A JP4931172B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Publications (3)

Publication Number Publication Date
JP2006241523A JP2006241523A (ja) 2006-09-14
JP2006241523A5 true JP2006241523A5 (https=) 2008-04-24
JP4931172B2 JP4931172B2 (ja) 2012-05-16

Family

ID=36941291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005059084A Expired - Fee Related JP4931172B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Country Status (6)

Country Link
US (1) US20090162565A1 (https=)
JP (1) JP4931172B2 (https=)
KR (1) KR100911644B1 (https=)
CN (1) CN101091001B (https=)
TW (1) TW200632129A (https=)
WO (1) WO2006093261A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020247237A1 (en) 2019-06-05 2020-12-10 Versum Materials Us, Llc New group v and vi transition metal precursors for thin film deposition
US11728177B2 (en) * 2021-02-11 2023-08-15 Applied Materials, Inc. Systems and methods for nitride-containing film removal

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100200739B1 (ko) * 1996-10-16 1999-06-15 윤종용 장벽금속막 형성방법
CN1185025A (zh) * 1996-12-10 1998-06-17 联华电子股份有限公司 低压化学气相沉积Ta2O5的低漏电流薄膜的制作方法
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
CN1265449C (zh) * 2002-05-17 2006-07-19 台湾积体电路制造股份有限公司 铜金属化制作工艺的低电阻值阻挡层的制造方法
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

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