JP2006241525A5 - - Google Patents

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Publication number
JP2006241525A5
JP2006241525A5 JP2005059086A JP2005059086A JP2006241525A5 JP 2006241525 A5 JP2006241525 A5 JP 2006241525A5 JP 2005059086 A JP2005059086 A JP 2005059086A JP 2005059086 A JP2005059086 A JP 2005059086A JP 2006241525 A5 JP2006241525 A5 JP 2006241525A5
Authority
JP
Japan
Prior art keywords
tantalum
nitride film
forming
tantalum nitride
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005059086A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006241525A (ja
JP4931174B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2005059086A external-priority patent/JP4931174B2/ja
Priority to JP2005059086A priority Critical patent/JP4931174B2/ja
Priority to TW095106850A priority patent/TWI410517B/zh
Priority to KR1020077012312A priority patent/KR100911643B1/ko
Priority to US11/885,347 priority patent/US8158197B2/en
Priority to PCT/JP2006/304073 priority patent/WO2006093263A1/ja
Priority to CN2006800014756A priority patent/CN101091005B/zh
Publication of JP2006241525A publication Critical patent/JP2006241525A/ja
Publication of JP2006241525A5 publication Critical patent/JP2006241525A5/ja
Publication of JP4931174B2 publication Critical patent/JP4931174B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005059086A 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法 Expired - Fee Related JP4931174B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005059086A JP4931174B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
TW095106850A TWI410517B (zh) 2005-03-03 2006-03-01 Method for forming tantalum nitride film
PCT/JP2006/304073 WO2006093263A1 (ja) 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法
US11/885,347 US8158197B2 (en) 2005-03-03 2006-03-03 Method for forming tantalum nitride film
KR1020077012312A KR100911643B1 (ko) 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법
CN2006800014756A CN101091005B (zh) 2005-03-03 2006-03-03 钽氮化物膜的形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005059086A JP4931174B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Publications (3)

Publication Number Publication Date
JP2006241525A JP2006241525A (ja) 2006-09-14
JP2006241525A5 true JP2006241525A5 (https=) 2008-04-24
JP4931174B2 JP4931174B2 (ja) 2012-05-16

Family

ID=36941293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005059086A Expired - Fee Related JP4931174B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Country Status (5)

Country Link
JP (1) JP4931174B2 (https=)
KR (1) KR100911643B1 (https=)
CN (1) CN101091005B (https=)
TW (1) TWI410517B (https=)
WO (1) WO2006093263A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009111251A (ja) * 2007-10-31 2009-05-21 Tohoku Univ 半導体装置およびその製造方法
WO2011162255A1 (ja) * 2010-06-22 2011-12-29 株式会社アルバック バリア膜の形成方法及び金属配線膜の形成方法
CN110350051B (zh) * 2019-07-30 2024-12-06 通威太阳能（成都）有限公司 一种含氮化合物晶硅叠瓦双面太阳电池及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
KR100200739B1 (ko) * 1996-10-16 1999-06-15 윤종용 장벽금속막 형성방법
US6410432B1 (en) * 1999-04-27 2002-06-25 Tokyo Electron Limited CVD of integrated Ta and TaNx films from tantalum halide precursors
US6265311B1 (en) * 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
TW200411923A (en) * 2002-07-19 2004-07-01 Asml Us Inc In-situ formation of metal insulator metal capacitors
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

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