WO2006093263A1 - タンタル窒化物膜の形成方法 - Google Patents

タンタル窒化物膜の形成方法 Download PDF

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Publication number
WO2006093263A1
WO2006093263A1 PCT/JP2006/304073 JP2006304073W WO2006093263A1 WO 2006093263 A1 WO2006093263 A1 WO 2006093263A1 JP 2006304073 W JP2006304073 W JP 2006304073W WO 2006093263 A1 WO2006093263 A1 WO 2006093263A1
Authority
WO
WIPO (PCT)
Prior art keywords
tantalum
film
gas
nitride film
tantalum nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2006/304073
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Narishi Gonohe
Satoru Toyoda
Harunori Ushikawa
Tomoyasu Kondo
Kyuzo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to US11/885,347 priority Critical patent/US8158197B2/en
Priority to CN2006800014756A priority patent/CN101091005B/zh
Publication of WO2006093263A1 publication Critical patent/WO2006093263A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/051—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Definitions

  • the content of C and N is low, the Ta / N composition ratio is high, and a wiring film (for example, It is an object of the present invention to provide a method for forming a low-resistance tantalum nitride film useful as a noria film that ensures adhesion to a (Cu wiring film).
  • a halogenated compound film made of xyz compound (wherein Hal represents a halogen atom)
  • Hal represents a halogen atom
  • a halogen atom or R (R ′) group bonded to N is cut and removed to form a tantalum-rich tantalum nitride film. If the number of carbon atoms in the coordination compound is exceeded, a large amount of carbon remains in the film.
  • a tantalum-rich tantalum nitride film can also be formed by implanting tantalum particles into the tantalum nitride film formed as described above by a PVD method such as sputtering.
  • a PVD method such as sputtering.
  • it can be carried out using a known sputtering apparatus in which a target is installed at a position facing the substrate holder above the vacuum chamber.
  • a laminated film is formed on the substrate S through the above steps, and then a wiring film is formed on the wiring film side adhesion layer by a known method.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
PCT/JP2006/304073 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法 Ceased WO2006093263A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/885,347 US8158197B2 (en) 2005-03-03 2006-03-03 Method for forming tantalum nitride film
CN2006800014756A CN101091005B (zh) 2005-03-03 2006-03-03 钽氮化物膜的形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005059086A JP4931174B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
JP2005-059086 2005-03-03

Publications (1)

Publication Number Publication Date
WO2006093263A1 true WO2006093263A1 (ja) 2006-09-08

Family

ID=36941293

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/304073 Ceased WO2006093263A1 (ja) 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法

Country Status (5)

Country Link
JP (1) JP4931174B2 (https=)
KR (1) KR100911643B1 (https=)
CN (1) CN101091005B (https=)
TW (1) TWI410517B (https=)
WO (1) WO2006093263A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110350051A (zh) * 2019-07-30 2019-10-18 通威太阳能（成都）有限公司 一种含氮化合物晶硅叠瓦双面太阳电池及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009111251A (ja) * 2007-10-31 2009-05-21 Tohoku Univ 半導体装置およびその製造方法
WO2011162255A1 (ja) * 2010-06-22 2011-12-29 株式会社アルバック バリア膜の形成方法及び金属配線膜の形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135155A (ja) * 1996-10-16 1998-05-22 Samsung Electron Co Ltd 障壁金属膜の形成方法
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
US6410432B1 (en) * 1999-04-27 2002-06-25 Tokyo Electron Limited CVD of integrated Ta and TaNx films from tantalum halide precursors
US6265311B1 (en) * 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
TW200411923A (en) * 2002-07-19 2004-07-01 Asml Us Inc In-situ formation of metal insulator metal capacitors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135155A (ja) * 1996-10-16 1998-05-22 Samsung Electron Co Ltd 障壁金属膜の形成方法
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHO K.-N. ET AL.: "Remote Plasma-Assisted Metal Organic Chemical Vapor Deposition of Tantalum Nitride Thin Films with Different Radicals", JPN. J. APPL. PHYS., vol. 37, no. 12A, PART 1, December 1998 (1998-12-01), pages 6502 - 6505, XP000927319 *
PARK S.G. AND KIM D.-H.: "Stability of Plasma Posttreated TiN Films Prepared by Alternating Cyclic Pulses of Tetrakis-Dimethylamido-Titanium and Ammonia", JPN. J. APPL. PHYS., vol. 43, no. 1, 2004, pages 303 - 304, XP002998700 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110350051A (zh) * 2019-07-30 2019-10-18 通威太阳能（成都）有限公司 一种含氮化合物晶硅叠瓦双面太阳电池及其制备方法

Also Published As

Publication number Publication date
TWI410517B (zh) 2013-10-01
TW200641176A (en) 2006-12-01
CN101091005B (zh) 2010-05-19
KR100911643B1 (ko) 2009-08-10
KR20070085593A (ko) 2007-08-27
JP2006241525A (ja) 2006-09-14
JP4931174B2 (ja) 2012-05-16
CN101091005A (zh) 2007-12-19

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