JP4931174B2 - タンタル窒化物膜の形成方法 - Google Patents

タンタル窒化物膜の形成方法 Download PDF

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Publication number
JP4931174B2
JP4931174B2 JP2005059086A JP2005059086A JP4931174B2 JP 4931174 B2 JP4931174 B2 JP 4931174B2 JP 2005059086 A JP2005059086 A JP 2005059086A JP 2005059086 A JP2005059086 A JP 2005059086A JP 4931174 B2 JP4931174 B2 JP 4931174B2
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JP
Japan
Prior art keywords
film
gas
tantalum
tantalum nitride
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005059086A
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English (en)
Japanese (ja)
Other versions
JP2006241525A (ja
JP2006241525A5 (https=
Inventor
成史 五戸
聡 豊田
治憲 牛川
智保 近藤
久三 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2005059086A priority Critical patent/JP4931174B2/ja
Priority to TW095106850A priority patent/TWI410517B/zh
Priority to KR1020077012312A priority patent/KR100911643B1/ko
Priority to PCT/JP2006/304073 priority patent/WO2006093263A1/ja
Priority to US11/885,347 priority patent/US8158197B2/en
Priority to CN2006800014756A priority patent/CN101091005B/zh
Publication of JP2006241525A publication Critical patent/JP2006241525A/ja
Publication of JP2006241525A5 publication Critical patent/JP2006241525A5/ja
Application granted granted Critical
Publication of JP4931174B2 publication Critical patent/JP4931174B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/051—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005059086A 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法 Expired - Fee Related JP4931174B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005059086A JP4931174B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
TW095106850A TWI410517B (zh) 2005-03-03 2006-03-01 Method for forming tantalum nitride film
PCT/JP2006/304073 WO2006093263A1 (ja) 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法
US11/885,347 US8158197B2 (en) 2005-03-03 2006-03-03 Method for forming tantalum nitride film
KR1020077012312A KR100911643B1 (ko) 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법
CN2006800014756A CN101091005B (zh) 2005-03-03 2006-03-03 钽氮化物膜的形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005059086A JP4931174B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Publications (3)

Publication Number Publication Date
JP2006241525A JP2006241525A (ja) 2006-09-14
JP2006241525A5 JP2006241525A5 (https=) 2008-04-24
JP4931174B2 true JP4931174B2 (ja) 2012-05-16

Family

ID=36941293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005059086A Expired - Fee Related JP4931174B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Country Status (5)

Country Link
JP (1) JP4931174B2 (https=)
KR (1) KR100911643B1 (https=)
CN (1) CN101091005B (https=)
TW (1) TWI410517B (https=)
WO (1) WO2006093263A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009111251A (ja) * 2007-10-31 2009-05-21 Tohoku Univ 半導体装置およびその製造方法
WO2011162255A1 (ja) * 2010-06-22 2011-12-29 株式会社アルバック バリア膜の形成方法及び金属配線膜の形成方法
CN110350051B (zh) * 2019-07-30 2024-12-06 通威太阳能（成都）有限公司 一种含氮化合物晶硅叠瓦双面太阳电池及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
KR100200739B1 (ko) * 1996-10-16 1999-06-15 윤종용 장벽금속막 형성방법
US6410432B1 (en) * 1999-04-27 2002-06-25 Tokyo Electron Limited CVD of integrated Ta and TaNx films from tantalum halide precursors
US6265311B1 (en) * 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
TW200411923A (en) * 2002-07-19 2004-07-01 Asml Us Inc In-situ formation of metal insulator metal capacitors
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
TWI410517B (zh) 2013-10-01
TW200641176A (en) 2006-12-01
CN101091005B (zh) 2010-05-19
WO2006093263A1 (ja) 2006-09-08
KR100911643B1 (ko) 2009-08-10
KR20070085593A (ko) 2007-08-27
JP2006241525A (ja) 2006-09-14
CN101091005A (zh) 2007-12-19

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