KR100911643B1 - 탄탈 질화물막의 형성 방법 - Google Patents

탄탈 질화물막의 형성 방법 Download PDF

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Publication number
KR100911643B1
KR100911643B1 KR1020077012312A KR20077012312A KR100911643B1 KR 100911643 B1 KR100911643 B1 KR 100911643B1 KR 1020077012312 A KR1020077012312 A KR 1020077012312A KR 20077012312 A KR20077012312 A KR 20077012312A KR 100911643 B1 KR100911643 B1 KR 100911643B1
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South Korea
Prior art keywords
tantalum
film
gas
nitride film
compound
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Expired - Fee Related
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KR1020077012312A
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English (en)
Korean (ko)
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KR20070085593A (ko
Inventor
나리시 고노헤
사토루 도요다
하루노리 우시카와
도모야스 곤도
규조 나카무라
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가부시키가이샤 알박
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/051—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020077012312A 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법 Expired - Fee Related KR100911643B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005059086A JP4931174B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
JPJP-P-2005-00059086 2005-03-03

Publications (2)

Publication Number Publication Date
KR20070085593A KR20070085593A (ko) 2007-08-27
KR100911643B1 true KR100911643B1 (ko) 2009-08-10

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Application Number Title Priority Date Filing Date
KR1020077012312A Expired - Fee Related KR100911643B1 (ko) 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법

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Country Link
JP (1) JP4931174B2 (https=)
KR (1) KR100911643B1 (https=)
CN (1) CN101091005B (https=)
TW (1) TWI410517B (https=)
WO (1) WO2006093263A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009111251A (ja) * 2007-10-31 2009-05-21 Tohoku Univ 半導体装置およびその製造方法
WO2011162255A1 (ja) * 2010-06-22 2011-12-29 株式会社アルバック バリア膜の形成方法及び金属配線膜の形成方法
CN110350051B (zh) * 2019-07-30 2024-12-06 通威太阳能（成都）有限公司 一种含氮化合物晶硅叠瓦双面太阳电池及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135155A (ja) 1996-10-16 1998-05-22 Samsung Electron Co Ltd 障壁金属膜の形成方法
JP2003342732A (ja) 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
US6410432B1 (en) * 1999-04-27 2002-06-25 Tokyo Electron Limited CVD of integrated Ta and TaNx films from tantalum halide precursors
US6265311B1 (en) * 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
TW200411923A (en) * 2002-07-19 2004-07-01 Asml Us Inc In-situ formation of metal insulator metal capacitors
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135155A (ja) 1996-10-16 1998-05-22 Samsung Electron Co Ltd 障壁金属膜の形成方法
JP2003342732A (ja) 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Cho, K.-N. et al., Jpn. J. Appl. Phys. Vol.37, pp.6502-6505.
Park, S. G. et al., Jpn. J. Appl. Phys. Vol.43, pp.303-304.

Also Published As

Publication number Publication date
TWI410517B (zh) 2013-10-01
TW200641176A (en) 2006-12-01
CN101091005B (zh) 2010-05-19
WO2006093263A1 (ja) 2006-09-08
KR20070085593A (ko) 2007-08-27
JP2006241525A (ja) 2006-09-14
JP4931174B2 (ja) 2012-05-16
CN101091005A (zh) 2007-12-19

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