CN101091005B - 钽氮化物膜的形成方法 - Google Patents

钽氮化物膜的形成方法 Download PDF

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Publication number
CN101091005B
CN101091005B CN2006800014756A CN200680001475A CN101091005B CN 101091005 B CN101091005 B CN 101091005B CN 2006800014756 A CN2006800014756 A CN 2006800014756A CN 200680001475 A CN200680001475 A CN 200680001475A CN 101091005 B CN101091005 B CN 101091005B
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CN
China
Prior art keywords
film
gas
tantalum
substrate
tantalum nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CN2006800014756A
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English (en)
Chinese (zh)
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CN101091005A (zh
Inventor
五户成史
丰田聪
牛川治宪
近藤智保
中村久三
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Ulvac Inc
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Ulvac Inc
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Publication date
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Publication of CN101091005A publication Critical patent/CN101091005A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/051—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2006800014756A 2005-03-03 2006-03-03 钽氮化物膜的形成方法 Expired - Lifetime CN101091005B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP059086/2005 2005-03-03
JP2005059086A JP4931174B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
PCT/JP2006/304073 WO2006093263A1 (ja) 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法

Publications (2)

Publication Number Publication Date
CN101091005A CN101091005A (zh) 2007-12-19
CN101091005B true CN101091005B (zh) 2010-05-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800014756A Expired - Lifetime CN101091005B (zh) 2005-03-03 2006-03-03 钽氮化物膜的形成方法

Country Status (5)

Country Link
JP (1) JP4931174B2 (https=)
KR (1) KR100911643B1 (https=)
CN (1) CN101091005B (https=)
TW (1) TWI410517B (https=)
WO (1) WO2006093263A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009111251A (ja) * 2007-10-31 2009-05-21 Tohoku Univ 半導体装置およびその製造方法
WO2011162255A1 (ja) * 2010-06-22 2011-12-29 株式会社アルバック バリア膜の形成方法及び金属配線膜の形成方法
CN110350051B (zh) * 2019-07-30 2024-12-06 通威太阳能（成都）有限公司 一种含氮化合物晶硅叠瓦双面太阳电池及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1351677A (zh) * 1999-04-27 2002-05-29 东京电子株式会社 从钽卤化物前体得到的钽氮化物膜的等离子增强的化学气相沉积方法
CN1354807A (zh) * 1999-04-27 2002-06-19 东京电子株式会社 自钽卤化物前体获得整体式的钽和钽氮化物膜的化学气相沉积方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
KR100200739B1 (ko) * 1996-10-16 1999-06-15 윤종용 장벽금속막 형성방법
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
TW200411923A (en) * 2002-07-19 2004-07-01 Asml Us Inc In-situ formation of metal insulator metal capacitors
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1351677A (zh) * 1999-04-27 2002-05-29 东京电子株式会社 从钽卤化物前体得到的钽氮化物膜的等离子增强的化学气相沉积方法
CN1354807A (zh) * 1999-04-27 2002-06-19 东京电子株式会社 自钽卤化物前体获得整体式的钽和钽氮化物膜的化学气相沉积方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2003-342732A 2003.12.03
JP特开平10-135155A 1998.05.22

Also Published As

Publication number Publication date
TWI410517B (zh) 2013-10-01
TW200641176A (en) 2006-12-01
WO2006093263A1 (ja) 2006-09-08
KR100911643B1 (ko) 2009-08-10
KR20070085593A (ko) 2007-08-27
JP2006241525A (ja) 2006-09-14
JP4931174B2 (ja) 2012-05-16
CN101091005A (zh) 2007-12-19

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