TW200631185A - Electronic tag chip - Google Patents

Electronic tag chip

Info

Publication number
TW200631185A
TW200631185A TW094146131A TW94146131A TW200631185A TW 200631185 A TW200631185 A TW 200631185A TW 094146131 A TW094146131 A TW 094146131A TW 94146131 A TW94146131 A TW 94146131A TW 200631185 A TW200631185 A TW 200631185A
Authority
TW
Taiwan
Prior art keywords
electronic tag
tag chip
reduce
soi
diodes
Prior art date
Application number
TW094146131A
Other languages
English (en)
Inventor
Mitsuo Usami
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of TW200631185A publication Critical patent/TW200631185A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0811—MIS diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW094146131A 2005-02-16 2005-12-23 Electronic tag chip TW200631185A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2005/002837 WO2006087822A1 (ja) 2005-02-16 2005-02-16 電子タグチップ

Publications (1)

Publication Number Publication Date
TW200631185A true TW200631185A (en) 2006-09-01

Family

ID=36916238

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146131A TW200631185A (en) 2005-02-16 2005-12-23 Electronic tag chip

Country Status (7)

Country Link
US (1) US7863718B2 (zh)
EP (1) EP1855315A4 (zh)
JP (1) JP4867915B2 (zh)
KR (2) KR20090127173A (zh)
CN (1) CN100568487C (zh)
TW (1) TW200631185A (zh)
WO (1) WO2006087822A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7298008B2 (en) * 2006-01-20 2007-11-20 International Business Machines Corporation Electrostatic discharge protection device and method of fabricating same
US8164933B2 (en) * 2007-04-04 2012-04-24 Semiconductor Energy Laboratory Co., Ltd. Power source circuit
FR2917895B1 (fr) * 2007-06-21 2010-04-09 Commissariat Energie Atomique Procede de fabrication d'un assemblage de puces reliees mecaniquement au moyen d'une connexion souple
JP5155616B2 (ja) * 2007-07-25 2013-03-06 沖プリンテッドサーキット株式会社 Ｒｆｉｄタグ、ｒｆｉｄシステムおよびｒｆｉｄタグの製造方法
JP5103127B2 (ja) * 2007-10-05 2012-12-19 株式会社日立製作所 Ｒｆｉｄタグ
US8445947B2 (en) * 2008-07-04 2013-05-21 Stmicroelectronics (Rousset) Sas Electronic circuit having a diode-connected MOS transistor with an improved efficiency
JP5655534B2 (ja) * 2009-12-18 2015-01-21 日本電波工業株式会社 電圧制御可変容量及び電圧制御発振器
JP5519318B2 (ja) * 2010-02-19 2014-06-11 日立Ｇｅニュークリア・エナジー株式会社 芯線認識システムおよび芯線認識方法
JP5632663B2 (ja) * 2010-06-29 2014-11-26 ルネサスエレクトロニクス株式会社 半導体装置
US9947688B2 (en) 2011-06-22 2018-04-17 Psemi Corporation Integrated circuits with components on both sides of a selected substrate and methods of fabrication
US9705363B2 (en) * 2013-06-14 2017-07-11 Renesas Electronics Corporation Communication control device and mounting board
DE102013108518B4 (de) 2013-08-07 2016-11-24 Infineon Technologies Ag Halbleitervorrichtung und verfahren zum herstellen derselben
US9502586B1 (en) * 2015-09-14 2016-11-22 Qualcomm Incorporated Backside coupled symmetric varactor structure
EP3843009A4 (en) * 2018-08-22 2022-05-11 Kyocera Corporation RFID LABEL SUBSTRATE,RFID LABEL AND RFID SYSTEM
CN109261477A (zh) * 2018-10-23 2019-01-25 浙江大学 一种具有刻蚀孔及分块式上电极的微机电压电超声波换能器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3850855T2 (de) * 1987-11-13 1994-11-10 Nissan Motor Halbleitervorrichtung.
JPH04352470A (ja) * 1991-05-30 1992-12-07 Mitsubishi Electric Corp 半導体装置
JPH05129423A (ja) * 1991-10-30 1993-05-25 Rohm Co Ltd 半導体装置及びその製造方法
JPH0664379A (ja) * 1992-08-12 1994-03-08 Oki Electric Ind Co Ltd Ｉｃカードおよびその製造方法
KR100306988B1 (ko) * 1992-10-26 2001-12-15 윌리엄 비. 켐플러 장치패키지
JP3254113B2 (ja) 1994-08-30 2002-02-04 セイコーインスツルメンツ株式会社 加速度センサ
JPH1154548A (ja) 1997-08-04 1999-02-26 Mitsubishi Heavy Ind Ltd 非接触タグにおけるｉｃチップ電極接続構造
JP2000299440A (ja) 1999-04-15 2000-10-24 Hitachi Ltd 電界効果トランジスタ及びそれを用いた集積化電圧発生回路
US6368901B2 (en) * 1999-07-15 2002-04-09 Texas Instruments Incorporated Integrated circuit wireless tagging
GB2352931A (en) 1999-07-29 2001-02-07 Marconi Electronic Syst Ltd Piezoelectric tag
JP2001230425A (ja) * 2000-02-17 2001-08-24 Seiko Epson Corp Ｍｏｓダイオード回路
JP4433629B2 (ja) * 2001-03-13 2010-03-17 株式会社日立製作所 半導体装置及びその製造方法
JP2004362190A (ja) 2003-06-04 2004-12-24 Hitachi Ltd 半導体装置
JP4525002B2 (ja) 2003-06-06 2010-08-18 株式会社日立製作所 無線認識半導体装置および無線認識半導体装置製造方法
US7271076B2 (en) * 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device

Also Published As

Publication number Publication date
US20090140300A1 (en) 2009-06-04
KR20070072595A (ko) 2007-07-04
KR20090127173A (ko) 2009-12-09
CN100568487C (zh) 2009-12-09
JPWO2006087822A1 (ja) 2008-07-03
WO2006087822A1 (ja) 2006-08-24
EP1855315A1 (en) 2007-11-14
KR101029215B1 (ko) 2011-04-12
US7863718B2 (en) 2011-01-04
EP1855315A4 (en) 2009-05-27
CN101076887A (zh) 2007-11-21
JP4867915B2 (ja) 2012-02-01

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