TW200621960A - Polishing composition and polishing method using the same - Google Patents

Polishing composition and polishing method using the same

Info

Publication number
TW200621960A
TW200621960A TW094135700A TW94135700A TW200621960A TW 200621960 A TW200621960 A TW 200621960A TW 094135700 A TW094135700 A TW 094135700A TW 94135700 A TW94135700 A TW 94135700A TW 200621960 A TW200621960 A TW 200621960A
Authority
TW
Taiwan
Prior art keywords
polishing
polishing composition
same
composition
water
Prior art date
Application number
TW094135700A
Other languages
English (en)
Inventor
Shinichiro Takami
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of TW200621960A publication Critical patent/TW200621960A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094135700A 2004-10-15 2005-10-13 Polishing composition and polishing method using the same TW200621960A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004300873A JP5026665B2 (ja) 2004-10-15 2004-10-15 研磨用組成物及びそれを用いた研磨方法

Publications (1)

Publication Number Publication Date
TW200621960A true TW200621960A (en) 2006-07-01

Family

ID=35451598

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094135700A TW200621960A (en) 2004-10-15 2005-10-13 Polishing composition and polishing method using the same

Country Status (7)

Country Link
US (2) US20060080896A1 (zh)
JP (1) JP5026665B2 (zh)
KR (2) KR101362837B1 (zh)
CN (1) CN1760307B (zh)
DE (1) DE102005049202A1 (zh)
GB (1) GB2420122B (zh)
TW (1) TW200621960A (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008041781A (ja) * 2006-08-02 2008-02-21 Fujimi Inc 研磨用組成物及び研磨方法
JP5335183B2 (ja) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR100725803B1 (ko) * 2006-12-05 2007-06-08 제일모직주식회사 실리콘 웨이퍼 최종 연마용 슬러리 조성물　및 이를 이용한실리콘 웨이퍼 최종 연마 방법
JP5474400B2 (ja) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
JP5575735B2 (ja) * 2008-07-03 2014-08-20 株式会社フジミインコーポレーテッド 研磨用組成物濃縮物
KR101125934B1 (ko) 2008-11-19 2012-03-21 한남대학교 산학협력단 열감응성 조직 유착 방지 조성물 및 이의 제조 방법
WO2012141145A1 (ja) * 2011-04-13 2012-10-18 株式会社 フジミインコーポレーテッド 基板のエッジ研磨用組成物及びそれを用いた基板のエッジ研磨方法
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
KR102226441B1 (ko) * 2013-02-13 2021-03-12 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마용 조성물 제조 방법 및 연마물 제조 방법
US8757265B1 (en) 2013-03-12 2014-06-24 EirCan Downhole Technologies, LLC Frac valve
JP6389629B2 (ja) * 2014-03-31 2018-09-12 ニッタ・ハース株式会社 研磨用組成物
CN106077659A (zh) * 2016-07-25 2016-11-09 北京工业大学 一种3d打印金属件表面抛光方法
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
CN112454017A (zh) * 2020-11-25 2021-03-09 西安奕斯伟硅片技术有限公司 硅片抛光方法和硅片抛光设备
CN115260912B (zh) * 2022-07-29 2024-03-26 江苏山水半导体科技有限公司 用于降低硅片表面腐蚀的抛光液及其制备和使用方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3183174B2 (ja) * 1996-06-27 2001-07-03 三菱化学株式会社 基体の表面処理方法及びそれに用いる有機錯化剤含有アンモニア水溶液
JP4113282B2 (ja) * 1998-05-07 2008-07-09 スピードファム株式会社 研磨組成物及びそれを用いたエッジポリッシング方法
JPH11349925A (ja) * 1998-06-05 1999-12-21 Fujimi Inc エッジポリッシング用組成物
JP2002114970A (ja) * 2000-10-04 2002-04-16 Asahi Denka Kogyo Kk 水系ラップ液及び水系ラップ剤
JP2002231666A (ja) 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2002249762A (ja) * 2001-02-27 2002-09-06 Sanyo Chem Ind Ltd 研磨材用添加剤
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
JP4707864B2 (ja) 2001-04-18 2011-06-22 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
JP3899456B2 (ja) * 2001-10-19 2007-03-28 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP2003303792A (ja) * 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体と研磨方法
WO2003094216A1 (fr) * 2002-04-30 2003-11-13 Hitachi Chemical Co., Ltd. Fluide de polissage et procede de polissage
JP2004031446A (ja) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2004128069A (ja) 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4865703B2 (ja) 2005-04-08 2012-02-01 イーグル工業株式会社 容量制御弁

Also Published As

Publication number Publication date
US20070256368A1 (en) 2007-11-08
KR20130142982A (ko) 2013-12-30
JP5026665B2 (ja) 2012-09-12
GB2420122A (en) 2006-05-17
GB0520729D0 (en) 2005-11-23
GB2420122B (en) 2010-02-10
US20060080896A1 (en) 2006-04-20
KR101362837B1 (ko) 2014-02-14
DE102005049202A1 (de) 2006-05-04
US7597729B2 (en) 2009-10-06
JP2006114713A (ja) 2006-04-27
CN1760307A (zh) 2006-04-19
CN1760307B (zh) 2012-02-15
KR20060053279A (ko) 2006-05-19

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