TW200610118A - Semiconductor device embedded structure and method for fabricating the same - Google Patents

Semiconductor device embedded structure and method for fabricating the same

Info

Publication number
TW200610118A
TW200610118A TW093127248A TW93127248A TW200610118A TW 200610118 A TW200610118 A TW 200610118A TW 093127248 A TW093127248 A TW 093127248A TW 93127248 A TW93127248 A TW 93127248A TW 200610118 A TW200610118 A TW 200610118A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
insulating layer
fabricating
same
embedded structure
Prior art date
Application number
TW093127248A
Other languages
English (en)
Other versions
TWI241007B (en
Inventor
Shih-Ping Hsu
Original Assignee
Phoenix Prec Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phoenix Prec Technology Corp filed Critical Phoenix Prec Technology Corp
Priority to TW093127248A priority Critical patent/TWI241007B/zh
Priority to US11/008,964 priority patent/US7129117B2/en
Application granted granted Critical
Publication of TWI241007B publication Critical patent/TWI241007B/zh
Publication of TW200610118A publication Critical patent/TW200610118A/zh
Priority to US11/510,604 priority patent/US7274099B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/82009—Pre-treatment of the connector or the bonding area
    • H01L2224/8203—Reshaping, e.g. forming vias
    • H01L2224/82035—Reshaping, e.g. forming vias by heating means
    • H01L2224/82039—Reshaping, e.g. forming vias by heating means using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
TW093127248A 2004-09-09 2004-09-09 Semiconductor device embedded structure and method for fabricating the same TWI241007B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW093127248A TWI241007B (en) 2004-09-09 2004-09-09 Semiconductor device embedded structure and method for fabricating the same
US11/008,964 US7129117B2 (en) 2004-09-09 2004-12-13 Method of embedding semiconductor chip in support plate and embedded structure thereof
US11/510,604 US7274099B2 (en) 2004-09-09 2006-08-28 Method of embedding semiconductor chip in support plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093127248A TWI241007B (en) 2004-09-09 2004-09-09 Semiconductor device embedded structure and method for fabricating the same

Publications (2)

Publication Number Publication Date
TWI241007B TWI241007B (en) 2005-10-01
TW200610118A true TW200610118A (en) 2006-03-16

Family

ID=35995386

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093127248A TWI241007B (en) 2004-09-09 2004-09-09 Semiconductor device embedded structure and method for fabricating the same

Country Status (2)

Country Link
US (2) US7129117B2 (zh)
TW (1) TWI241007B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103906372A (zh) * 2012-12-27 2014-07-02 富葵精密组件(深圳)有限公司 具有内埋元件的电路板及其制作方法

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9691635B1 (en) * 2002-05-01 2017-06-27 Amkor Technology, Inc. Buildup dielectric layer having metallization pattern semiconductor package fabrication method
JP4528062B2 (ja) * 2004-08-25 2010-08-18 富士通株式会社 半導体装置およびその製造方法
TWI241007B (en) * 2004-09-09 2005-10-01 Phoenix Prec Technology Corp Semiconductor device embedded structure and method for fabricating the same
TWI245384B (en) * 2004-12-10 2005-12-11 Phoenix Prec Technology Corp Package structure with embedded chip and method for fabricating the same
JP2006210852A (ja) * 2005-01-31 2006-08-10 Toshiba Corp 表面実装型回路部品を実装する回路基板及びその製造方法
US7303947B1 (en) * 2005-07-13 2007-12-04 Lockheed Martin Corporation Source bridge for cooling and/or external connection
US7602062B1 (en) * 2005-08-10 2009-10-13 Altera Corporation Package substrate with dual material build-up layers
TWI297941B (en) * 2005-10-13 2008-06-11 Phoenix Prec Technology Corp Semiconductor device with electroless plating metal connecting layer and method for fabricating the same
US7759167B2 (en) * 2005-11-23 2010-07-20 Imec Method for embedding dies
CN100463128C (zh) * 2005-11-25 2009-02-18 全懋精密科技股份有限公司 半导体芯片埋入基板的三维构装结构及其制作方法
TWI279897B (en) * 2005-12-23 2007-04-21 Phoenix Prec Technology Corp Embedded semiconductor chip structure and method for fabricating the same
US8067253B2 (en) * 2005-12-21 2011-11-29 Avery Dennison Corporation Electrical device and method of manufacturing electrical devices using film embossing techniques to embed integrated circuits into film
US8153472B2 (en) 2006-06-20 2012-04-10 Unimicron Technology Corp. Embedded chip package process
TWI292947B (en) 2006-06-20 2008-01-21 Unimicron Technology Corp The structure of embedded chip packaging and the fabricating method thereof
TWI327361B (en) * 2006-07-28 2010-07-11 Unimicron Technology Corp Circuit board structure having passive component and stack structure thereof
KR100796523B1 (ko) 2006-08-17 2008-01-21 삼성전기주식회사 전자부품 내장형 다층 인쇄배선기판 및 그 제조방법
US7851331B2 (en) * 2006-11-27 2010-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding structures and methods of forming bonding structures
TWI330401B (en) * 2006-12-25 2010-09-11 Unimicron Technology Corp Circuit board structure having embedded semiconductor component and fabrication method thereof
US20090160053A1 (en) * 2007-12-19 2009-06-25 Infineon Technologies Ag Method of manufacturing a semiconducotor device
KR101070798B1 (ko) * 2008-01-15 2011-10-06 삼성전기주식회사 인쇄회로기판 및 그 제조방법
TWI443789B (zh) * 2008-07-04 2014-07-01 Unimicron Technology Corp 嵌埋有半導體晶片之電路板及其製法
US7855439B2 (en) * 2008-08-28 2010-12-21 Fairchild Semiconductor Corporation Molded ultra thin semiconductor die packages, systems using the same, and methods of making the same
US7993941B2 (en) * 2008-12-05 2011-08-09 Stats Chippac, Ltd. Semiconductor package and method of forming Z-direction conductive posts embedded in structurally protective encapsulant
US20110156261A1 (en) * 2009-03-24 2011-06-30 Christopher James Kapusta Integrated circuit package and method of making same
US9299661B2 (en) * 2009-03-24 2016-03-29 General Electric Company Integrated circuit package and method of making same
KR101170878B1 (ko) * 2009-06-29 2012-08-02 삼성전기주식회사 반도체 칩 패키지 및 그의 제조방법
TWI418272B (zh) * 2009-08-25 2013-12-01 Samsung Electro Mech 處理核心基板之空腔的方法
TWI501376B (zh) * 2009-10-07 2015-09-21 Xintec Inc 晶片封裝體及其製造方法
DE102009058764A1 (de) * 2009-12-15 2011-06-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer elektronischen Baugruppe und elektronische Baugruppe
US8421226B2 (en) * 2010-02-25 2013-04-16 Infineon Technologies Ag Device including an encapsulated semiconductor chip and manufacturing method thereof
US8927339B2 (en) 2010-11-22 2015-01-06 Bridge Semiconductor Corporation Method of making thermally enhanced semiconductor assembly with bump/base/flange heat spreader and build-up circuitry
US8680683B1 (en) * 2010-11-30 2014-03-25 Triquint Semiconductor, Inc. Wafer level package with embedded passive components and method of manufacturing
CN103367339A (zh) * 2012-03-26 2013-10-23 宏启胜精密电子(秦皇岛)有限公司 芯片封装方法及芯片封装结构
CN103929895A (zh) * 2013-01-15 2014-07-16 宏启胜精密电子(秦皇岛)有限公司 具有内埋元件的电路板、其制作方法及封装结构
AT514564B1 (de) * 2013-07-04 2015-02-15 Austria Tech & System Tech Verfahren zum Ankontaktieren und Umverdrahten
CN105934823A (zh) 2013-11-27 2016-09-07 At&S奥地利科技与系统技术股份公司 印刷电路板结构
AT515101B1 (de) * 2013-12-12 2015-06-15 Austria Tech & System Tech Verfahren zum Einbetten einer Komponente in eine Leiterplatte
US9171795B2 (en) 2013-12-16 2015-10-27 Stats Chippac Ltd. Integrated circuit packaging system with embedded component and method of manufacture thereof
AT515447B1 (de) 2014-02-27 2019-10-15 At & S Austria Tech & Systemtechnik Ag Verfahren zum Kontaktieren eines in eine Leiterplatte eingebetteten Bauelements sowie Leiterplatte
US11523520B2 (en) 2014-02-27 2022-12-06 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Method for making contact with a component embedded in a printed circuit board
TWI517321B (zh) 2014-12-08 2016-01-11 旭德科技股份有限公司 封裝結構及其製作方法
US9806063B2 (en) 2015-04-29 2017-10-31 Qualcomm Incorporated Reinforced wafer level package comprising a core layer for reducing stress in a solder joint and improving solder joint reliability
CN107463193B (zh) * 2017-08-30 2022-09-09 中国医科大学附属第一医院 一种低温组织包埋温度控制系统
EP3481162B1 (en) * 2017-11-06 2023-09-06 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with two component carrier portions and a component being embedded in a blind opening of one of the component carrier portions
US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
TWI718011B (zh) * 2019-02-26 2021-02-01 日商長瀨產業股份有限公司 嵌入式半導體封裝及其方法
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
IT201900006740A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di strutturazione di substrati
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
US11232951B1 (en) 2020-07-14 2022-01-25 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918811A (en) * 1986-09-26 1990-04-24 General Electric Company Multichip integrated circuit packaging method
US5682066A (en) * 1996-08-12 1997-10-28 Motorola, Inc. Microelectronic assembly including a transparent encapsulant
CN101232776B (zh) * 1999-09-02 2011-04-20 揖斐电株式会社 印刷布线板
JP3813402B2 (ja) * 2000-01-31 2006-08-23 新光電気工業株式会社 半導体装置の製造方法
US6586276B2 (en) * 2001-07-11 2003-07-01 Intel Corporation Method for fabricating a microelectronic device using wafer-level adhesion layer deposition
US20030066679A1 (en) * 2001-10-09 2003-04-10 Castro Abram M. Electrical circuit and method of formation
FI115285B (fi) * 2002-01-31 2005-03-31 Imbera Electronics Oy Menetelmä komponentin upottamiseksi alustaan ja kontaktin muodostamiseksi
TWI241007B (en) * 2004-09-09 2005-10-01 Phoenix Prec Technology Corp Semiconductor device embedded structure and method for fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103906372A (zh) * 2012-12-27 2014-07-02 富葵精密组件(深圳)有限公司 具有内埋元件的电路板及其制作方法
TWI466607B (zh) * 2012-12-27 2014-12-21 Zhen Ding Technology Co Ltd 具有內埋元件的電路板及其製作方法
US9089082B2 (en) 2012-12-27 2015-07-21 Zhen Ding Technology Co., Ltd. Printed circuit board with embedded component and method for manufacturing same
CN103906372B (zh) * 2012-12-27 2017-03-01 碁鼎科技秦皇岛有限公司 具有内埋元件的电路板及其制作方法

Also Published As

Publication number Publication date
US7129117B2 (en) 2006-10-31
US20060049530A1 (en) 2006-03-09
US7274099B2 (en) 2007-09-25
US20060290010A1 (en) 2006-12-28
TWI241007B (en) 2005-10-01

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