DE102005054872A1 - Vertikales Leistungshalbleiterbauelement, Halbleiterbauteil und Verfahren zu deren Herstellung - Google Patents

Vertikales Leistungshalbleiterbauelement, Halbleiterbauteil und Verfahren zu deren Herstellung Download PDF

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Publication number
DE102005054872A1
DE102005054872A1 DE102005054872A DE102005054872A DE102005054872A1 DE 102005054872 A1 DE102005054872 A1 DE 102005054872A1 DE 102005054872 A DE102005054872 A DE 102005054872A DE 102005054872 A DE102005054872 A DE 102005054872A DE 102005054872 A1 DE102005054872 A1 DE 102005054872A1
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plating
thickness
semiconductor device
control electrode
power semiconductor
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DE102005054872A
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DE102005054872B4 (de
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Ralf Otremba
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Infineon Technologies AG
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Infineon Technologies AG
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Priority to DE102005054872A priority Critical patent/DE102005054872B4/de
Priority to US11/560,158 priority patent/US7659611B2/en
Publication of DE102005054872A1 publication Critical patent/DE102005054872A1/de
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

Ein vertikales Leistungshalbleiterbauelement (1) mit einer Oberseite (3) und einer Rückseite (4) wird vorgesehen. Die Oberseite (3) weist mindestens eine erste Elektrodenkontaktfläche (8) und mindestens eine Steuerungselektrodenoberfläche (9) auf und die Rückseite (4) weist eine zweite Elektrodenkontaktfläche (7) auf. Eine erste Metallisierung (10) mit einer Dicke a ist auf der ersten Elektrodenkontaktfläche (8) angeordnet. Eine zweite Metallisierung (11) mit einer Dicke b ist auf der Steuerungselektrodenfläche (9) angeordnet. Eine dritte Metallisierung (6) mit einer Dicke c ist auf der zweiten Elektrodenkontaktfläche (7) angeordnet. Die Dicke a der ersten Metallisierung (10) ist mindestens 10-fach dicker als die Dicke b der zweiten Metallisierung (11).
DE102005054872A 2005-11-15 2005-11-15 Vertikales Leistungshalbleiterbauelement, Halbleiterbauteil und Verfahren zu deren Herstellung Expired - Fee Related DE102005054872B4 (de)

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US11/560,158 US7659611B2 (en) 2005-11-15 2006-11-15 Vertical power semiconductor component, semiconductor device and methods for the production thereof

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US7902665B2 (en) 2008-09-02 2011-03-08 Linear Technology Corporation Semiconductor device having a suspended isolating interconnect
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US10109609B2 (en) 2014-01-13 2018-10-23 Infineon Technologies Austria Ag Connection structure and electronic component
DE112015004770B4 (de) * 2014-10-20 2021-01-14 Mitsubishi Electric Corporation Leistungsmodul
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CN111052325A (zh) * 2017-09-04 2020-04-21 三菱电机株式会社 半导体模块以及电力转换装置
CN111052325B (zh) * 2017-09-04 2024-03-08 三菱电机株式会社 半导体模块以及电力转换装置
DE102019108443A1 (de) * 2019-04-01 2020-10-01 Infineon Technologies Ag Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls
US11715719B2 (en) 2019-05-17 2023-08-01 Infineon Technologies Ag Semiconductor package and method of forming a semiconductor package
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