TW200609378A - Device and method for high-throughput chemical vapor deposition - Google Patents

Device and method for high-throughput chemical vapor deposition

Info

Publication number
TW200609378A
TW200609378A TW094125541A TW94125541A TW200609378A TW 200609378 A TW200609378 A TW 200609378A TW 094125541 A TW094125541 A TW 094125541A TW 94125541 A TW94125541 A TW 94125541A TW 200609378 A TW200609378 A TW 200609378A
Authority
TW
Taiwan
Prior art keywords
substrate
process chamber
depositing
fed
run
Prior art date
Application number
TW094125541A
Other languages
English (en)
Inventor
Piotr Stryzewski
Peter Baumann
Marcus Schumacher
Johannes Lindner
Antonio Mesquida Kusters
Original Assignee
Aixtron Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Ag filed Critical Aixtron Ag
Publication of TW200609378A publication Critical patent/TW200609378A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
    • B05C3/18—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material only one side of the work coming into contact with the liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
TW094125541A 2004-08-06 2005-07-28 Device and method for high-throughput chemical vapor deposition TW200609378A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004038539 2004-08-06
DE102004056170A DE102004056170A1 (de) 2004-08-06 2004-11-20 Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz

Publications (1)

Publication Number Publication Date
TW200609378A true TW200609378A (en) 2006-03-16

Family

ID=35033498

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094125541A TW200609378A (en) 2004-08-06 2005-07-28 Device and method for high-throughput chemical vapor deposition

Country Status (7)

Country Link
US (2) US20080096369A1 (zh)
EP (1) EP1774057B1 (zh)
JP (1) JP2008509547A (zh)
KR (1) KR101318940B1 (zh)
DE (2) DE102004056170A1 (zh)
TW (1) TW200609378A (zh)
WO (1) WO2006015915A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102134710A (zh) * 2009-12-25 2011-07-27 东京毅力科创株式会社 成膜装置

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US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
EP2042619A3 (de) * 2007-09-28 2010-06-02 OSRAM Opto Semiconductors GmbH Beschichtungsvorrichtung und Verfahren zu deren Betrieb
DE102008010041A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Schichtabscheidevorrichtung und Verfahren zu deren Betrieb
JP4661990B2 (ja) * 2008-06-27 2011-03-30 東京エレクトロン株式会社 成膜装置、成膜方法、基板処理装置及び記憶媒体
JP5310283B2 (ja) * 2008-06-27 2013-10-09 東京エレクトロン株式会社 成膜方法、成膜装置、基板処理装置及び記憶媒体
JP5195676B2 (ja) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP5262452B2 (ja) * 2008-08-29 2013-08-14 東京エレクトロン株式会社 成膜装置及び基板処理装置
US8808456B2 (en) * 2008-08-29 2014-08-19 Tokyo Electron Limited Film deposition apparatus and substrate process apparatus
JP5195176B2 (ja) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置
JP5549754B2 (ja) * 2008-08-29 2014-07-16 東京エレクトロン株式会社 成膜装置
JP5253932B2 (ja) 2008-09-04 2013-07-31 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
JP5253933B2 (ja) * 2008-09-04 2013-07-31 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
JP5280964B2 (ja) * 2008-09-04 2013-09-04 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
JP5062144B2 (ja) * 2008-11-10 2012-10-31 東京エレクトロン株式会社 ガスインジェクター
JP5031013B2 (ja) * 2008-11-19 2012-09-19 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法、プログラム、プログラムを記憶するコンピュータ可読記憶媒体
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JP5056735B2 (ja) 2008-12-02 2012-10-24 東京エレクトロン株式会社 成膜装置
US20100227059A1 (en) 2009-03-04 2010-09-09 Tokyo Electron Limited Film deposition apparatus, film deposition method, and computer readable storage medium
JP5107285B2 (ja) * 2009-03-04 2012-12-26 東京エレクトロン株式会社 成膜装置、成膜方法、プログラム、およびコンピュータ可読記憶媒体
JP5141607B2 (ja) * 2009-03-13 2013-02-13 東京エレクトロン株式会社 成膜装置
JP5181100B2 (ja) * 2009-04-09 2013-04-10 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5131240B2 (ja) * 2009-04-09 2013-01-30 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
JP5553588B2 (ja) 2009-12-10 2014-07-16 東京エレクトロン株式会社 成膜装置
JP5497423B2 (ja) * 2009-12-25 2014-05-21 東京エレクトロン株式会社 成膜装置
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JP5493062B2 (ja) * 2010-04-15 2014-05-14 サムコ株式会社 有機金属気相成長装置
KR101502857B1 (ko) * 2010-12-29 2015-03-18 세메스 주식회사 기판지지부재, 이를 갖는 기판처리장치 및 기판처리방법
EP2721191B1 (en) 2011-06-16 2022-09-14 Zimmer, Inc. Chemical vapor infiltration apparatus and process
CA2839407C (en) 2011-06-16 2017-07-04 Zimmer, Inc. Micro-alloyed porous metal having optimized chemical composition and method of manufacturing the same
JP2013222884A (ja) 2012-04-18 2013-10-28 Furukawa Co Ltd 気相成長装置および成膜方法
JP5403113B2 (ja) * 2012-06-15 2014-01-29 東京エレクトロン株式会社 成膜装置
JP5883154B2 (ja) * 2012-10-11 2016-03-09 東京エレクトロン株式会社 成膜装置
JP5447632B2 (ja) * 2012-11-29 2014-03-19 東京エレクトロン株式会社 基板処理装置
JP2014195043A (ja) * 2013-02-27 2014-10-09 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法並びにガス給排方法
TWI683382B (zh) * 2013-03-15 2020-01-21 應用材料股份有限公司 具有光學測量的旋轉氣體分配組件
TWI627305B (zh) * 2013-03-15 2018-06-21 應用材料股份有限公司 用於轉盤處理室之具有剛性板的大氣蓋
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JP6087236B2 (ja) * 2013-07-24 2017-03-01 東京エレクトロン株式会社 成膜方法
CN104342751B (zh) * 2013-08-02 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔和mocvd设备
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Also Published As

Publication number Publication date
DE502005008063D1 (de) 2009-10-15
JP2008509547A (ja) 2008-03-27
WO2006015915A1 (de) 2006-02-16
WO2006015915B1 (de) 2007-11-22
KR101318940B1 (ko) 2013-10-17
DE102004056170A1 (de) 2006-03-16
EP1774057B1 (de) 2009-09-02
EP1774057A1 (de) 2007-04-18
US8906456B2 (en) 2014-12-09
KR20070039958A (ko) 2007-04-13
US20080096369A1 (en) 2008-04-24
US20140030434A1 (en) 2014-01-30

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