TW200745367A - Gas manifold valve cluster - Google Patents
Gas manifold valve clusterInfo
- Publication number
- TW200745367A TW200745367A TW095128000A TW95128000A TW200745367A TW 200745367 A TW200745367 A TW 200745367A TW 095128000 A TW095128000 A TW 095128000A TW 95128000 A TW95128000 A TW 95128000A TW 200745367 A TW200745367 A TW 200745367A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas manifold
- manifold valve
- valve cluster
- present
- process chamber
- Prior art date
Links
- 239000007789 gas Substances 0.000 abstract 5
- 238000000231 atomic layer deposition Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000012423 maintenance Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a gas manifold valve cluster and deposition apparatus. In some embodiments of the present invention a gas manifold valve cluster and system are provided that promotes reduced length and volumes of gas lines that will be exposed to atmosphere during cleaning which minimizes the time required to perform process chamber maintenance and therefore increase the productivity of the process chamber. In other embodiments a gas manifold valve cluster and system are provided that promote fast actuation of gases during semiconductor processing, particularly during atomic layer deposition (ALD).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70371105P | 2005-07-29 | 2005-07-29 | |
US70371705P | 2005-07-29 | 2005-07-29 | |
US70372305P | 2005-07-29 | 2005-07-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200745367A true TW200745367A (en) | 2007-12-16 |
Family
ID=37709329
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095128000A TW200745367A (en) | 2005-07-29 | 2006-07-31 | Gas manifold valve cluster |
TW095127999A TW200721269A (en) | 2005-07-29 | 2006-07-31 | Deposition apparatus for semiconductor processing |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095127999A TW200721269A (en) | 2005-07-29 | 2006-07-31 | Deposition apparatus for semiconductor processing |
Country Status (6)
Country | Link |
---|---|
US (2) | US20070022959A1 (en) |
EP (2) | EP1915470A4 (en) |
JP (2) | JP2009503875A (en) |
KR (2) | KR20080033406A (en) |
TW (2) | TW200745367A (en) |
WO (2) | WO2007016701A2 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008210980A (en) * | 2007-02-26 | 2008-09-11 | Toshiba Corp | Method of forming pattern |
JP5347294B2 (en) * | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, and storage medium |
JP2009088346A (en) * | 2007-10-01 | 2009-04-23 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
KR20100126545A (en) * | 2008-03-25 | 2010-12-01 | 오씨 외를리콘 발처스 악티엔게젤샤프트 | Processing chamber |
US20100183825A1 (en) * | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
US8832916B2 (en) * | 2011-07-12 | 2014-09-16 | Lam Research Corporation | Methods of dechucking and system thereof |
JP5513544B2 (en) * | 2012-04-23 | 2014-06-04 | 東京エレクトロン株式会社 | Substrate processing equipment |
US9490152B2 (en) * | 2012-05-29 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Asymmetrical chamber configuration |
JP5772736B2 (en) * | 2012-06-18 | 2015-09-02 | 株式会社デンソー | Atomic layer deposition equipment |
US10669625B2 (en) * | 2013-03-15 | 2020-06-02 | Taiwan Semiconductor Manufacturing Company Limited | Pumping liner for chemical vapor deposition |
US20150211114A1 (en) * | 2014-01-30 | 2015-07-30 | Applied Materials, Inc. | Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects |
US20160033070A1 (en) * | 2014-08-01 | 2016-02-04 | Applied Materials, Inc. | Recursive pumping member |
DE102016101003A1 (en) | 2016-01-21 | 2017-07-27 | Aixtron Se | CVD apparatus with a process chamber housing which can be removed from the reactor housing as an assembly |
TWI727024B (en) * | 2016-04-15 | 2021-05-11 | 美商應用材料股份有限公司 | Micro-volume deposition chamber |
KR102326377B1 (en) | 2016-06-07 | 2021-11-15 | 가부시키가이샤 코쿠사이 엘렉트릭 | Substrate processing apparatus, method of manufacturing semiconductor device and program |
JP6890085B2 (en) * | 2017-11-30 | 2021-06-18 | 東京エレクトロン株式会社 | Board processing equipment |
JP7186032B2 (en) * | 2018-07-27 | 2022-12-08 | 東京エレクトロン株式会社 | Film forming apparatus and film forming method |
JP6768134B2 (en) * | 2019-11-08 | 2020-10-14 | 株式会社Kokusai Electric | Substrate processing equipment and semiconductor equipment manufacturing methods and programs |
US11447866B2 (en) | 2020-06-17 | 2022-09-20 | Applied Materials, Inc. | High temperature chemical vapor deposition lid |
US20220084845A1 (en) * | 2020-09-17 | 2022-03-17 | Applied Materials, Inc. | High conductance process kit |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2638020B1 (en) * | 1988-10-14 | 1990-12-28 | Labo Electronique Physique | EPITAXY REACTOR WITH IMPROVED GAS COLLECTOR |
JPH02114530A (en) * | 1988-10-25 | 1990-04-26 | Mitsubishi Electric Corp | Thin film formation device |
DE4011933C2 (en) * | 1990-04-12 | 1996-11-21 | Balzers Hochvakuum | Process for the reactive surface treatment of a workpiece and treatment chamber therefor |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5567267A (en) * | 1992-11-20 | 1996-10-22 | Tokyo Electron Limited | Method of controlling temperature of susceptor |
US5453124A (en) * | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
CH687258A5 (en) * | 1993-04-22 | 1996-10-31 | Balzers Hochvakuum | Gas inlet arrangement. |
TW296534B (en) * | 1993-12-17 | 1997-01-21 | Tokyo Electron Co Ltd | |
GB9410567D0 (en) * | 1994-05-26 | 1994-07-13 | Philips Electronics Uk Ltd | Plasma treatment and apparatus in electronic device manufacture |
US5441568A (en) * | 1994-07-15 | 1995-08-15 | Applied Materials, Inc. | Exhaust baffle for uniform gas flow pattern |
JP3360098B2 (en) * | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | Shower head structure of processing equipment |
JPH09149921A (en) * | 1995-09-26 | 1997-06-10 | Shimadzu Corp | Rescue supporter |
US5568406A (en) * | 1995-12-01 | 1996-10-22 | Gerber; Eliot S. | Stolen car detection system and method |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
US5993916A (en) * | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
JP3310171B2 (en) * | 1996-07-17 | 2002-07-29 | 松下電器産業株式会社 | Plasma processing equipment |
US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
US5938333A (en) * | 1996-10-04 | 1999-08-17 | Amalgamated Research, Inc. | Fractal cascade as an alternative to inter-fluid turbulence |
FR2755443B1 (en) * | 1996-11-05 | 1999-01-15 | Centre Nat Etd Spatiales | PIGMENTS COATED WITH AN ULTRAVIOLET RADIATION ABSORBING AGENT, PROCESS FOR THEIR PREPARATION AND PAINTS CONTAINING THEM |
US6152070A (en) * | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
GB9712400D0 (en) * | 1997-06-16 | 1997-08-13 | Trikon Equip Ltd | Shower head |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6161500A (en) * | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US5955952A (en) * | 1997-10-24 | 1999-09-21 | Sunset Advertising Enterprises, Inc. | Method and system for locating a lost person or lost personal property |
US5983238A (en) * | 1997-12-26 | 1999-11-09 | Diamond Id | Gemstons identification tracking and recovery system |
DE19802572A1 (en) * | 1998-01-23 | 1999-08-05 | Siemens Health Service Gmbh & | Medical system architecture |
JP4217299B2 (en) * | 1998-03-06 | 2009-01-28 | 東京エレクトロン株式会社 | Processing equipment |
US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
US6302964B1 (en) * | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6148761A (en) * | 1998-06-16 | 2000-11-21 | Applied Materials, Inc. | Dual channel gas distribution plate |
US6086677A (en) * | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US5955953A (en) * | 1998-07-02 | 1999-09-21 | Hanson; Michael C. | Pet identifier |
US6034605A (en) * | 1998-12-08 | 2000-03-07 | March; Anthony W. | System/method for secure storage of personal information and for broadcast of the personal information at a time of emergency |
US6364954B2 (en) * | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
US6499425B1 (en) * | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
US6333019B1 (en) * | 1999-04-29 | 2001-12-25 | Marc-Olivier Coppens | Method for operating a chemical and/or physical process by means of a hierarchical fluid injection system |
WO2000074127A1 (en) * | 1999-05-26 | 2000-12-07 | Tokyo Electron Limited | Plasma process device |
US6530992B1 (en) * | 1999-07-09 | 2003-03-11 | Applied Materials, Inc. | Method of forming a film in a chamber and positioning a substitute in a chamber |
US6449611B1 (en) * | 1999-09-30 | 2002-09-10 | Fred Frankel | Business model for recovery of missing goods, persons, or fugitive or disbursements of unclaimed goods using the internet |
US20020107947A1 (en) * | 1999-12-09 | 2002-08-08 | Zephyr Media, Inc. | System and method for integration of a universally publicly accessible global network |
JP2001167054A (en) * | 1999-12-09 | 2001-06-22 | Casio Comput Co Ltd | Portable information equipment, device and system for authentication |
US6502530B1 (en) * | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
JP4422295B2 (en) * | 2000-05-17 | 2010-02-24 | キヤノンアネルバ株式会社 | CVD equipment |
US6572706B1 (en) * | 2000-06-19 | 2003-06-03 | Simplus Systems Corporation | Integrated precursor delivery system |
AU2001283101A1 (en) * | 2000-08-14 | 2002-02-25 | Adbeep. Com, Llc | Method and apparatus for displaying advertising indicia on wireless device |
US6896737B1 (en) * | 2000-08-28 | 2005-05-24 | Micron Technology, Inc. | Gas delivery device for improved deposition of dielectric material |
US20020039067A1 (en) * | 2000-10-03 | 2002-04-04 | Timothy Eubanks | Personnel location system |
KR100434487B1 (en) * | 2001-01-17 | 2004-06-05 | 삼성전자주식회사 | Shower head & film forming apparatus having the same |
JP3500359B2 (en) * | 2001-01-30 | 2004-02-23 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method, substrate treatment apparatus and substrate treatment method |
US6660126B2 (en) * | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US7085616B2 (en) * | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US7780785B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US20030116087A1 (en) * | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US7175713B2 (en) * | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US20030159653A1 (en) * | 2002-02-28 | 2003-08-28 | Dando Ross S. | Manifold assembly for feeding reactive precursors to substrate processing chambers |
US6932871B2 (en) * | 2002-04-16 | 2005-08-23 | Applied Materials, Inc. | Multi-station deposition apparatus and method |
US20040050326A1 (en) * | 2002-09-12 | 2004-03-18 | Thilderkvist Karin Anna Lena | Apparatus and method for automatically controlling gas flow in a substrate processing system |
US20040050325A1 (en) * | 2002-09-12 | 2004-03-18 | Samoilov Arkadii V. | Apparatus and method for delivering process gas to a substrate processing system |
US7494560B2 (en) * | 2002-11-27 | 2009-02-24 | International Business Machines Corporation | Non-plasma reaction apparatus and method |
US20040118519A1 (en) * | 2002-12-20 | 2004-06-24 | Applied Materials, Inc. | Blocker plate bypass design to improve clean rate at the edge of the chamber |
US7572337B2 (en) * | 2004-05-26 | 2009-08-11 | Applied Materials, Inc. | Blocker plate bypass to distribute gases in a chemical vapor deposition system |
US7601242B2 (en) * | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
-
2006
- 2006-07-31 EP EP06800800A patent/EP1915470A4/en not_active Withdrawn
- 2006-07-31 JP JP2008524283A patent/JP2009503875A/en active Pending
- 2006-07-31 KR KR1020087003607A patent/KR20080033406A/en not_active Application Discontinuation
- 2006-07-31 WO PCT/US2006/030547 patent/WO2007016701A2/en active Application Filing
- 2006-07-31 TW TW095128000A patent/TW200745367A/en unknown
- 2006-07-31 KR KR1020087003609A patent/KR20080034157A/en not_active Application Discontinuation
- 2006-07-31 US US11/496,787 patent/US20070022959A1/en not_active Abandoned
- 2006-07-31 JP JP2008524287A patent/JP2009503876A/en active Pending
- 2006-07-31 EP EP06789139A patent/EP1913172A2/en not_active Withdrawn
- 2006-07-31 US US11/496,993 patent/US20070028838A1/en not_active Abandoned
- 2006-07-31 WO PCT/US2006/030000 patent/WO2007016592A2/en active Application Filing
- 2006-07-31 TW TW095127999A patent/TW200721269A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007016701A2 (en) | 2007-02-08 |
JP2009503875A (en) | 2009-01-29 |
EP1915470A4 (en) | 2012-04-04 |
EP1913172A2 (en) | 2008-04-23 |
TW200721269A (en) | 2007-06-01 |
WO2007016592A2 (en) | 2007-02-08 |
WO2007016592A3 (en) | 2007-10-04 |
EP1915470A2 (en) | 2008-04-30 |
WO2007016701A3 (en) | 2007-12-21 |
US20070028838A1 (en) | 2007-02-08 |
WO2007016592A9 (en) | 2007-04-19 |
JP2009503876A (en) | 2009-01-29 |
KR20080033406A (en) | 2008-04-16 |
KR20080034157A (en) | 2008-04-18 |
US20070022959A1 (en) | 2007-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200745367A (en) | Gas manifold valve cluster | |
TW200710948A (en) | Substrate processing apparatus using a batch processing chamber | |
WO2012118955A3 (en) | Apparatus and process for atomic layer deposition | |
TW200644085A (en) | A plasma enhanced atomic layer deposition system having reduced contamination | |
WO2010129292A3 (en) | Cluster tool for leds | |
TW200609378A (en) | Device and method for high-throughput chemical vapor deposition | |
WO2003065424A3 (en) | Apparatus for cyclical deposition of thin films | |
WO2012136876A8 (en) | Atomic layer deposition with plasma source | |
TW200802543A (en) | Cluster tool for epitaxial film formation | |
TW200641998A (en) | Formation of silicon nitride film | |
WO2010129183A3 (en) | Mocvd single chamber split process for led manufacturing | |
WO2012148801A3 (en) | Semiconductor substrate processing system | |
GB201121034D0 (en) | Apparatus and method for depositing a layer onto a substrate | |
TW200732501A (en) | High temperature ALD inlet manifold | |
WO2007053607A3 (en) | Pumping system for atomic layer deposition | |
TW200730661A (en) | Method and system for performing plasma enhanced atomic layer deposition | |
WO2008024566A3 (en) | Overall defect reduction for pecvd films | |
GB2516372A (en) | High quality large scale single and multilayer graphene production by chemical vapor deposition | |
TW200621095A (en) | Plasma processing system for treating a substrate | |
TW200802554A (en) | A method of manufacturing a semiconductor device and device of processing substrate | |
ATE551438T1 (en) | CVD REACTOR WITH LOWERABLE PROCESS CHAMBER CEILING | |
WO2010118293A3 (en) | Hvpe chamber hardware | |
TW200643213A (en) | Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same | |
WO2013016191A3 (en) | Methods and apparatus for the deposition of materials on a substrate | |
JP2012204655A5 (en) |