TW200607094A - Semiconductor device and method of manufacturing thereof - Google Patents
Semiconductor device and method of manufacturing thereofInfo
- Publication number
- TW200607094A TW200607094A TW094125542A TW94125542A TW200607094A TW 200607094 A TW200607094 A TW 200607094A TW 094125542 A TW094125542 A TW 094125542A TW 94125542 A TW94125542 A TW 94125542A TW 200607094 A TW200607094 A TW 200607094A
- Authority
- TW
- Taiwan
- Prior art keywords
- insulation film
- fin
- buried insulation
- gate electrode
- side surfaces
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004229535A JP2006049627A (ja) | 2004-08-05 | 2004-08-05 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200607094A true TW200607094A (en) | 2006-02-16 |
| TWI279002B TWI279002B (en) | 2007-04-11 |
Family
ID=35756592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094125542A TWI279002B (en) | 2004-08-05 | 2005-07-28 | Semiconductor device and method of manufacturing thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20060027870A1 (zh) |
| JP (1) | JP2006049627A (zh) |
| CN (1) | CN1731589A (zh) |
| TW (1) | TWI279002B (zh) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4256381B2 (ja) * | 2005-11-09 | 2009-04-22 | 株式会社東芝 | 半導体装置 |
| JP4855786B2 (ja) * | 2006-01-25 | 2012-01-18 | 株式会社東芝 | 半導体装置 |
| US8616959B2 (en) | 2006-09-27 | 2013-12-31 | Igt | Server based gaming system having system triggered loyalty award sequences |
| US8779495B2 (en) * | 2007-04-19 | 2014-07-15 | Qimonda Ag | Stacked SONOS memory |
| KR100870189B1 (ko) * | 2007-05-28 | 2008-11-25 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| JP2008300384A (ja) * | 2007-05-29 | 2008-12-11 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| JP2009054705A (ja) * | 2007-08-24 | 2009-03-12 | Toshiba Corp | 半導体基板、半導体装置およびその製造方法 |
| JP2009206306A (ja) * | 2008-02-28 | 2009-09-10 | Seiko Epson Corp | 半導体装置の製造方法及び電気光学装置の製造方法 |
| CN102034865B (zh) * | 2009-09-30 | 2012-07-04 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| US8211772B2 (en) * | 2009-12-23 | 2012-07-03 | Intel Corporation | Two-dimensional condensation for uniaxially strained semiconductor fins |
| CN102315265B (zh) | 2010-06-30 | 2013-12-04 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| CN102842507B (zh) * | 2011-06-24 | 2015-08-19 | 中国科学院微电子研究所 | 半导体场效应晶体管的制备方法 |
| US8778744B2 (en) * | 2011-06-24 | 2014-07-15 | Institute of Microelectronics, Chinese Academy of Sciences | Method for manufacturing semiconductor field effect transistor |
| US8759874B1 (en) * | 2012-11-30 | 2014-06-24 | Stmicroelectronics, Inc. | FinFET device with isolated channel |
| US9123654B2 (en) * | 2013-02-15 | 2015-09-01 | International Business Machines Corporation | Trilayer SIT process with transfer layer for FINFET patterning |
| KR102017625B1 (ko) | 2013-05-10 | 2019-10-22 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
| US9006736B2 (en) | 2013-07-12 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10170315B2 (en) | 2013-07-17 | 2019-01-01 | Globalfoundries Inc. | Semiconductor device having local buried oxide |
| US9252272B2 (en) * | 2013-11-18 | 2016-02-02 | Globalfoundries Inc. | FinFET semiconductor device having local buried oxide |
| US9087743B2 (en) * | 2013-11-20 | 2015-07-21 | Globalfoundries Inc. | Silicon-on-insulator finFET with bulk source and drain |
| CN103681356A (zh) * | 2013-12-27 | 2014-03-26 | 上海集成电路研发中心有限公司 | 以碳纳米管为掩膜制备FinFET的方法 |
| US9859420B1 (en) * | 2016-08-18 | 2018-01-02 | International Business Machines Corporation | Tapered vertical FET having III-V channel |
| CN108962986B (zh) * | 2017-05-18 | 2021-07-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4044276B2 (ja) * | 2000-09-28 | 2008-02-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP4216676B2 (ja) * | 2003-09-08 | 2009-01-28 | 株式会社東芝 | 半導体装置 |
| JP2005116969A (ja) * | 2003-10-10 | 2005-04-28 | Toshiba Corp | 半導体装置及びその製造方法 |
| WO2005064682A1 (en) * | 2003-12-08 | 2005-07-14 | International Business Machines Corporation | Semiconductor memory device with increased node capacitance |
| US6949768B1 (en) * | 2004-10-18 | 2005-09-27 | International Business Machines Corporation | Planar substrate devices integrated with finfets and method of manufacture |
-
2004
- 2004-08-05 JP JP2004229535A patent/JP2006049627A/ja not_active Abandoned
-
2005
- 2005-04-07 US US11/100,559 patent/US20060027870A1/en not_active Abandoned
- 2005-07-28 TW TW094125542A patent/TWI279002B/zh not_active IP Right Cessation
- 2005-08-05 CN CN200510091695.XA patent/CN1731589A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006049627A (ja) | 2006-02-16 |
| TWI279002B (en) | 2007-04-11 |
| CN1731589A (zh) | 2006-02-08 |
| US20060027870A1 (en) | 2006-02-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |