TW200605367A - Nand flash memory with densely packed memory gates and fabrication process - Google Patents

Nand flash memory with densely packed memory gates and fabrication process

Info

Publication number
TW200605367A
TW200605367A TW093141450A TW93141450A TW200605367A TW 200605367 A TW200605367 A TW 200605367A TW 093141450 A TW093141450 A TW 093141450A TW 93141450 A TW93141450 A TW 93141450A TW 200605367 A TW200605367 A TW 200605367A
Authority
TW
Taiwan
Prior art keywords
gates
charge storage
memory
cells
silicon substrate
Prior art date
Application number
TW093141450A
Other languages
English (en)
Inventor
Prateep Tuntasood
Der-Tsyr Fan
Chiou-Feng Chen
Original Assignee
Actrans System Inc Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Actrans System Inc Usa filed Critical Actrans System Inc Usa
Publication of TW200605367A publication Critical patent/TW200605367A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW093141450A 2004-07-26 2004-12-30 Nand flash memory with densely packed memory gates and fabrication process TW200605367A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/900,413 US20060017085A1 (en) 2004-07-26 2004-07-26 NAND flash memory with densely packed memory gates and fabrication process

Publications (1)

Publication Number Publication Date
TW200605367A true TW200605367A (en) 2006-02-01

Family

ID=35656220

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093141450A TW200605367A (en) 2004-07-26 2004-12-30 Nand flash memory with densely packed memory gates and fabrication process

Country Status (5)

Country Link
US (2) US20060017085A1 (zh)
JP (1) JP2006041525A (zh)
KR (1) KR20060046773A (zh)
CN (1) CN1728393A (zh)
TW (1) TW200605367A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI787080B (zh) * 2022-02-10 2022-12-11 旺宏電子股份有限公司 三維快閃記憶體元件

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7387932B2 (en) * 2004-07-06 2008-06-17 Macronix International Co., Ltd. Method for manufacturing a multiple-gate charge trapping non-volatile memory
US7473589B2 (en) * 2005-12-09 2009-01-06 Macronix International Co., Ltd. Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
US7315474B2 (en) 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US8482052B2 (en) 2005-01-03 2013-07-09 Macronix International Co., Ltd. Silicon on insulator and thin film transistor bandgap engineered split gate memory
TWI273699B (en) * 2005-02-04 2007-02-11 Powerchip Semiconductor Corp Non-volatile memory and operating method thereof
TWI263342B (en) * 2005-03-04 2006-10-01 Powerchip Semiconductor Corp Non-volatile memory and manufacturing method and operating method thereof
US7247907B2 (en) * 2005-05-20 2007-07-24 Silicon Storage Technology, Inc. Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
US7763927B2 (en) * 2005-12-15 2010-07-27 Macronix International Co., Ltd. Non-volatile memory device having a nitride-oxide dielectric layer
US7772068B2 (en) * 2006-08-30 2010-08-10 Macronix International Co., Ltd. Method of manufacturing non-volatile memory
US8772858B2 (en) * 2006-10-11 2014-07-08 Macronix International Co., Ltd. Vertical channel memory and manufacturing method thereof and operating method using the same
US7811890B2 (en) * 2006-10-11 2010-10-12 Macronix International Co., Ltd. Vertical channel transistor structure and manufacturing method thereof
KR100855978B1 (ko) * 2006-11-03 2008-09-02 삼성전자주식회사 비휘발성 메모리 소자, 그 적층 구조, 그 동작 방법, 그제조방법 및 비휘발성 메모리 소자를 이용한 시스템
KR100856701B1 (ko) * 2006-12-04 2008-09-04 경북대학교 산학협력단 고집적 플래시 메모리 셀 스트링，셀 소자，및 그 제조방법
JP5166442B2 (ja) * 2006-12-21 2013-03-21 サンディスク テクノロジィース インコーポレイテッド 不揮発性メモリセルの低電圧プログラミングの方法およびシステム
KR20080087580A (ko) * 2007-03-27 2008-10-01 삼성전자주식회사 비휘발성 메모리 소자의 제조 방법
US7737488B2 (en) * 2007-08-09 2010-06-15 Macronix International Co., Ltd. Blocking dielectric engineered charge trapping memory cell with high speed erase
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US9240405B2 (en) 2011-04-19 2016-01-19 Macronix International Co., Ltd. Memory with off-chip controller
US8885404B2 (en) * 2011-12-24 2014-11-11 Sandisk Technologies Inc. Non-volatile storage system with three layer floating gate
CN112365913B (zh) * 2020-09-29 2021-09-03 中天弘宇集成电路有限责任公司 3d nand闪存编程方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685770B2 (ja) * 1987-12-28 1997-12-03 株式会社東芝 不揮発性半導体記憶装置
US5050125A (en) * 1987-11-18 1991-09-17 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cellstructure
KR0167874B1 (ko) * 1993-06-29 1999-01-15 사토 후미오 반도체 기억장치
JP3354418B2 (ja) * 1997-01-20 2002-12-09 株式会社東芝 半導体記憶装置
KR100297728B1 (ko) * 1999-05-17 2001-09-26 윤종용 플래쉬 메모리 소자의 제조방법 및 그에 의해 제조된 플래쉬 메모리 소자
US6580120B2 (en) 2001-06-07 2003-06-17 Interuniversitair Microelektronica Centrum (Imec Vzw) Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure
US6891262B2 (en) * 2001-07-19 2005-05-10 Sony Corporation Semiconductor device and method of producing the same
US6885586B2 (en) * 2002-09-19 2005-04-26 Actrans System Inc. Self-aligned split-gate NAND flash memory and fabrication process
US6885590B1 (en) * 2003-01-14 2005-04-26 Advanced Micro Devices, Inc. Memory device having A P+ gate and thin bottom oxide and method of erasing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI787080B (zh) * 2022-02-10 2022-12-11 旺宏電子股份有限公司 三維快閃記憶體元件

Also Published As

Publication number Publication date
US20060017085A1 (en) 2006-01-26
JP2006041525A (ja) 2006-02-09
US7501321B2 (en) 2009-03-10
US20070032018A1 (en) 2007-02-08
KR20060046773A (ko) 2006-05-17
CN1728393A (zh) 2006-02-01

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