TW200536643A - Electrolytic processing apparatus - Google Patents
Electrolytic processing apparatus Download PDFInfo
- Publication number
- TW200536643A TW200536643A TW094109721A TW94109721A TW200536643A TW 200536643 A TW200536643 A TW 200536643A TW 094109721 A TW094109721 A TW 094109721A TW 94109721 A TW94109721 A TW 94109721A TW 200536643 A TW200536643 A TW 200536643A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- processing
- liquid
- regeneration
- electrolytic
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 186
- 239000007788 liquid Substances 0.000 claims abstract description 106
- 230000008929 regeneration Effects 0.000 claims abstract description 77
- 238000011069 regeneration method Methods 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000001172 regenerating effect Effects 0.000 claims description 38
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 238000005192 partition Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 5
- 230000035699 permeability Effects 0.000 claims description 3
- 239000003014 ion exchange membrane Substances 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 210000000078 claw Anatomy 0.000 claims 2
- 238000004070 electrodeposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 65
- 230000008569 process Effects 0.000 abstract description 16
- 150000002500 ions Chemical class 0.000 description 95
- 238000005342 ion exchange Methods 0.000 description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 29
- 239000000463 material Substances 0.000 description 29
- 229910052802 copper Inorganic materials 0.000 description 28
- 239000010949 copper Substances 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 25
- 229910021642 ultra pure water Inorganic materials 0.000 description 18
- 239000012498 ultrapure water Substances 0.000 description 18
- 239000012535 impurity Substances 0.000 description 15
- 239000000047 product Substances 0.000 description 14
- 150000001450 anions Chemical class 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 238000005868 electrolysis reaction Methods 0.000 description 11
- 238000005349 anion exchange Methods 0.000 description 10
- 150000001768 cations Chemical class 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 239000004745 nonwoven fabric Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- -1 chloride oxygen ion Chemical class 0.000 description 9
- 238000010559 graft polymerization reaction Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000005341 cation exchange Methods 0.000 description 7
- 239000008151 electrolyte solution Substances 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- 206010011469 Crying Diseases 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 2
- 244000046052 Phaseolus vulgaris Species 0.000 description 2
- 229910052778 Plutonium Inorganic materials 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- OMPPDPLZONNXCQ-UHFFFAOYSA-N 2-aminoacetic acid;ethyl prop-2-enoate Chemical compound NCC(O)=O.CCOC(=O)C=C OMPPDPLZONNXCQ-UHFFFAOYSA-N 0.000 description 1
- PEKQBUGAEPFZBE-UHFFFAOYSA-N C=CC1=CC=CC=C1.[S-2].[Na+].[Na+] Chemical compound C=CC1=CC=CC=C1.[S-2].[Na+].[Na+] PEKQBUGAEPFZBE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 244000269722 Thea sinensis Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 239000005548 dental material Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 159000000011 group IA salts Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004096287A JP2005281753A (ja) | 2004-03-29 | 2004-03-29 | 電解加工装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200536643A true TW200536643A (en) | 2005-11-16 |
Family
ID=35056231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094109721A TW200536643A (en) | 2004-03-29 | 2005-03-29 | Electrolytic processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20080217164A1 (ja) |
| JP (1) | JP2005281753A (ja) |
| TW (1) | TW200536643A (ja) |
| WO (1) | WO2005093135A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6699604B2 (ja) * | 2017-03-14 | 2020-05-27 | トヨタ自動車株式会社 | 金属皮膜の成膜方法 |
| JP6699606B2 (ja) * | 2017-03-15 | 2020-05-27 | トヨタ自動車株式会社 | 金属皮膜の成膜装置 |
| JP6699605B2 (ja) * | 2017-03-15 | 2020-05-27 | トヨタ自動車株式会社 | 金属皮膜の成膜方法 |
| JP6740951B2 (ja) * | 2017-04-03 | 2020-08-19 | トヨタ自動車株式会社 | 金属皮膜の成膜装置 |
| DE102019200832A1 (de) * | 2019-01-24 | 2020-07-30 | MTU Aero Engines AG | VERFAHREN ZUM ENTFERNEN VON Cr(VI)-IONEN AUS EINER WÄSSRIGEN ELEKTROLYTLÖSUNG |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6722950B1 (en) * | 2000-11-07 | 2004-04-20 | Planar Labs Corporation | Method and apparatus for electrodialytic chemical mechanical polishing and deposition |
| KR100917433B1 (ko) * | 2001-11-29 | 2009-09-14 | 가부시키가이샤 에바라 세이사꾸쇼 | 이온 교환기를 재생시키는 방법 및 장치, 그리고 전해질처리장치 |
| JP4056359B2 (ja) * | 2002-03-22 | 2008-03-05 | 株式会社荏原製作所 | 電解加工装置及び方法 |
| JP4076430B2 (ja) * | 2002-01-31 | 2008-04-16 | 株式会社荏原製作所 | 基板処理装置 |
| JP3967207B2 (ja) * | 2002-06-12 | 2007-08-29 | 株式会社荏原製作所 | 電解加工装置 |
| JP2004015028A (ja) * | 2002-06-11 | 2004-01-15 | Ebara Corp | 基板処理方法及び半導体装置 |
-
2004
- 2004-03-29 JP JP2004096287A patent/JP2005281753A/ja not_active Ceased
-
2005
- 2005-03-24 WO PCT/JP2005/006208 patent/WO2005093135A1/en active Application Filing
- 2005-03-24 US US10/585,739 patent/US20080217164A1/en not_active Abandoned
- 2005-03-29 TW TW094109721A patent/TW200536643A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005093135A1 (en) | 2005-10-06 |
| US20080217164A1 (en) | 2008-09-11 |
| JP2005281753A (ja) | 2005-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI277473B (en) | Electrolytic processing apparatus and method, fixing method, fixing structure for ion exchanging member | |
| TWI291732B (en) | Substrate treating device and substrate treating method | |
| JP5817826B2 (ja) | 膜電解スタックを含む電気透析装置および無電解メッキ浴の再生方法 | |
| US8133380B2 (en) | Method for regenerating ion exchanger | |
| CN100449705C (zh) | 电解处理装置和衬底处理设备 | |
| TWI224531B (en) | Substrate processing apparatus and method | |
| TW200536643A (en) | Electrolytic processing apparatus | |
| TW200305470A (en) | Electrochemical machining device and electrochemical machining method | |
| JP2006000792A (ja) | 電解析出処理装置および方法 | |
| CN102491460B (zh) | 一种可溶金属盐回收与废水净化装置及其方法 | |
| JP2009231238A (ja) | 廃棄電解液のリサイクル方法 | |
| TWI310790B (en) | Device and method for regenerating an electroless metal plating bath | |
| TWI283196B (en) | Electrolytic processing apparatus and method | |
| TW592859B (en) | Electrolytic processing apparatus and method | |
| JP2003205428A (ja) | 電解加工装置及び方法 | |
| CN102491461B (zh) | 一种无膜电去离子硬水软化装置及其方法 | |
| JP3995463B2 (ja) | 電解加工方法 | |
| JP4172945B2 (ja) | 電解加工用イオン交換体の再生方法及び再生装置 | |
| JP4130073B2 (ja) | イオン交換体の再生方法及び再生装置 | |
| JP2004250776A (ja) | 基板処理装置及び方法 | |
| JP4274714B2 (ja) | 加工装置及び加工方法 | |
| CN101101861A (zh) | 衬底加工设备和衬底加工方法 | |
| JP4056359B2 (ja) | 電解加工装置及び方法 | |
| JP5036746B2 (ja) | 塩化物イオン除去装置及び塩化物イオン除去方法 | |
| JP3967207B2 (ja) | 電解加工装置 |