TW200536073A - Hybrid integrated circuit package and method of the same - Google Patents

Hybrid integrated circuit package and method of the same Download PDF

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Publication number
TW200536073A
TW200536073A TW093111305A TW93111305A TW200536073A TW 200536073 A TW200536073 A TW 200536073A TW 093111305 A TW093111305 A TW 093111305A TW 93111305 A TW93111305 A TW 93111305A TW 200536073 A TW200536073 A TW 200536073A
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Taiwan
Prior art keywords
area
substrate
integrated circuit
packaging
item
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TW093111305A
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Chinese (zh)
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TWI230448B (en
Inventor
Sheng-Tsung Liu
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Advanced Semiconductor Eng
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Publication of TWI230448B publication Critical patent/TWI230448B/en
Publication of TW200536073A publication Critical patent/TW200536073A/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15151Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A hybrid integrated circuit package includes a substrate. The substrate has an upper surface and a lower surface. The upper surface includes a molding area, a clamping area and a coupling area. A chip is attached to the molding area. A plurality of surface mounting devices are attached to the coupling area. The chip and the surface mounting devices electrically connect the substrate. The clamping area surrounds the molding area. The substrate has a molding opening passing through the upper surface and the lower surface of the substrate and adjacent to the molding area. A molding compound through the molding opening is molded on the molding area of the substrate for sealing the chip.

Description

200536073200536073

五、發明說明(1) 【發明所屬之技術領域】 本發明係有關於一種積體電路之封裝& 關於一種混裝型積體電路之封裝構造。冓^,特別係有 【先前技術】 目前在半導體封裝製程中,通常以移轉主模 (transfer mold)形成—固態封膠(m〇ldi / ^ -基板上表面之封裝區,以密封設在該封 〇:n = 匕而為了使該固態封膠能夠順利形成於該:裝;曰片需2 s亥基板之上表面設計—鍍有金層之流道區,V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a package of an integrated circuit & a package structure of a mixed type integrated circuit.冓 ^, in particular, [prior art] At present, in the semiconductor packaging process, it is usually formed by a transfer mold—a solid-state sealant (m0ldi / ^-the packaging area on the upper surface of the substrate), which is provided in a sealed manner. The seal 〇: n = dagger and in order to enable the solid sealant to be successfully formed in the: device; the film needs 2 s of the surface design on the substrate-a channel area plated with gold,

積體電路(㈣…⑹之封裝構造,其基板在封 晶Ϊ 之周圍係形成有複數個用以接合表面接合W )兀件之接&墊,若使用移轉注模形成固態封膠之方法製造 該混裝型積體電路之封裝構造,該移轉注模之模且可能會 褒在ϊ合區之該些接合墊,且因該基板:封裝區 距離该基板之邊緣較遠’縱使能克服上述之問題,使得該 $接合墊不被移轉注模之模具污染或損壞,但由於需另外 设计較長之流道區,而使得廢料增多,造成成本增加,且 可能使得注膠壓力不足,而無法填滿該封裝區,故混裝型 積,電路之封㈣造不$用以#轉注模形&固態封膠之方 法製作,而以液態封膠(liquid c〇mp〇und)密封該封裝Μ 區。 請參閱第1及2圖,習知之混裝型積體電路之封裝構造 100,其係包含一基板110,該基板11()係具有一上表面U1 及一下表面112,該基板110之上表面ηι係包含有一封裝For integrated circuit (㈣ ... ⑹ package structure, the substrate is formed with a plurality of bonding pads on the substrate around the sealing chip Ϊ), and if a transfer injection molding method is used to form a solid sealant Manufacturing the packaging structure of the mixed-type integrated circuit, the transfer injection mold may be stuck in the bonding pads in the bonding area, and because the substrate: the packaging area is far from the edge of the substrate, it can be overcome The above problems prevent the $ bonding pad from being contaminated or damaged by the mold of the transfer injection mold, but because of the need to design a longer runner area, the waste is increased, the cost is increased, and the injection pressure may be insufficient. The packaging area cannot be filled, so the mixed type product is used. The circuit seal can not be made by the method of #transfer injection molding & solid sealant, and the liquid sealant (liquid commpund) is used to seal the seal. Encapsulate the M area. Please refer to FIGS. 1 and 2 for a conventional package structure 100 of a hybrid integrated circuit, which includes a substrate 110, and the substrate 11 () has an upper surface U1 and a lower surface 112, and an upper surface of the substrate 110. ηι system contains a package

200536073 五、發明說明(2) 區11 3及一結合區1 1 4,該封裝區丨丨3係設有一晶片丨2 0,該 晶片1 2 0係藉由複數個銲線丨3〇與該基板丨丨〇電性連接,該 結合區11 4係設有複數個表面接合元件丨5〇,且該些表面接 合元件1 5 0係與該基板11 〇電性連接,由於該結合區丨1 4設 有該些表面接合元件150,因此該晶片12〇與該銲線丨3〇係 以一 /夜態封膠1 4 0 ( 1 i qu i d compound )密封,但以該液態封 膠1 4 0密封該晶片1 2 0與該銲線1 3 〇,不僅產能與可靠度不 及以固態封膠密封該晶片1 2 〇與該銲線1 30,且該液態封膠 1 40之成本比固態封膠高,但以固態封膠密封該晶片丨2 〇與 該銲線1 30又會有上述廢料較多、注膠壓力不足等問題。 【發明内容】 β 本發明之主要目的係在於提供一混裝型積體電路 (Hybrid 1C)之封裝構造,其係包含一基板、一晶片、複 數個表面接合元件及一固態封膠,該基板係具有一封膠注 入口’該封膠注入口係貫通該基板之上表面與下表面並鄰 接該基板之封裝區,該固態封膠(m〇lding compound)係由 該基板之下表面經過該封膠注入口而模設(m〇lded)於該基 板之封裝區,以密封該晶片,其係取代習知之混裝型積體 電路之封裝構造必須以液態封膠(1 i qu i d compound )密封 5玄晶片’以提高產能及產品信賴性,並降低成本。 鲁儀1 本發明之主要目的係在於提供一混裝型積體電路之封 裝構造之製造方法,其係經由一基板之封膠注入口,模設 (mo 1 d 1 ng) —固態封膠於該基板之封裝區,以密封一晶 片’取代習知之混裝型積體電路之封裝構造必須以液態封200536073 V. Description of the invention (2) Area 11 3 and a bonding area 1 1 4 The package area 丨 3 is provided with a chip 丨 2 0, and the chip 1 2 0 is provided by a plurality of bonding wires 丨 30 and the The substrate 丨 丨 is electrically connected. The bonding region 114 is provided with a plurality of surface bonding elements 501, and the surface bonding elements 1500 are electrically connected to the substrate 1100. 4 are provided with the surface bonding elements 150, so the wafer 12 and the bonding wire 丨 30 are sealed with a 1 / night sealant 1 4 0 (1 i qu id compound), but with the liquid sealant 1 4 0 Seal the wafer 1 2 0 and the bonding wire 1 3 0, not only the productivity and reliability are not as good as sealing the wafer 1 2 0 and the bonding wire 1 30 with a solid sealant, but also the cost of the liquid sealant 1 40 is higher than the solid seal. The glue is high, but sealing the wafer with a solid-state sealant and the bonding wire 130 will cause problems such as the above-mentioned waste and insufficient injection pressure. [Summary of the Invention] β The main purpose of the present invention is to provide a package structure of a hybrid integrated circuit (Hybrid 1C), which includes a substrate, a wafer, a plurality of surface-bonding elements, and a solid-state sealant. The substrate It has a glue injection port. The sealant injection port penetrates the upper and lower surfaces of the substrate and adjoins the packaging area of the substrate. The solid sealing compound passes through the lower surface of the substrate through the substrate. Seal the injection port and mold (mold) in the packaging area of the substrate to seal the chip. This is to replace the packaging structure of the conventional mixed-type integrated circuit with a liquid sealing compound (1 i qu id compound). Sealed 5 Xuan wafers' to increase productivity and product reliability, and reduce costs. Lu Yi 1 The main purpose of the present invention is to provide a method for manufacturing a package structure of a mixed-type integrated circuit, which is moulded (mo 1 d 1 ng) through a sealant injection port of a substrate—solid state sealant The packaging area of the substrate must be sealed with a wafer 'instead of the conventional packaging structure of a packaged integrated circuit.

第7頁 200536073 五、發明說明(3) 膠密封該晶片,以提高產能及產品信賴性,並降低成本。 依本f明之混裝型積體電路之封裝構造,其係包含一 基板、一晶片、—固態封膠及複數個表面接合元 板係具! 了上表面及一下表面,該上表面係包含有一封i 區、一合模區及一結合區,該合模區係圍繞該封裝區,該 基板係具有一封膠注入口,其係貫通該基板之上表面與^ 表面並鄰接該封裝區,該晶片係設於該基板之封裝區了並 $該基板電性連接,該固態封膠係經由該封膠注入口而模 設於該基板之封裝區,以密封該晶片,該些表面接合元件 係設於該基板之結合區,並與該基板電性連接 【實施方式】 參閱所附圖式,本發明將列舉以下之實施例說明。 依本發明之一具體實施例,請參閱第3及4圖,一種混 裝型積體電路(Hybrid 1C)之封裝構造200,其係包含一基 板210、一晶片 220、一固態封膠230 (mol ding compound)" 及複數個表面接合元件2 4〇,該基板2 1()之材質係可為βτ、 FR-4或FR-5,其係具有一上表面2n及一不表面212,該上 表面211係包含有一封裝區2 13、一合模區214及一結合區 215,該封裝區2 13係可呈矩形,且該封裝區213係形成有 複數個銲墊216,該合模區214係圍繞該封裝區215而呈回馨 形’其係設於該封裝區2 13與該結合區215之間,且該合模 區21 4之寬度係不小於i 〇mni,以供一上模具3丨〇與一下模 具3 20合模(如第5C圖所示),該結合區215係形成有複數個 結合墊217,該基板210係具有一封膠注入口218,其係貫Page 7 200536073 V. Description of the invention (3) Seal the chip with glue to improve productivity and product reliability, and reduce costs. The package structure of the mixed-type integrated circuit according to this document includes a substrate, a wafer, a solid-state sealant, and a plurality of surface bonding element boards. The upper surface and the lower surface include an upper surface and a lower surface. A sealing area, a mold clamping area, and a bonding area. The mold clamping area surrounds the packaging area. The substrate has a glue injection port that penetrates the upper surface and the surface of the substrate and abuts the packaging area. The chip is located in the packaging area of the substrate and is electrically connected to the substrate. The solid-state sealant is molded in the packaging area of the substrate through the sealant injection port to seal the chip, and the surface bonding components It is set in the bonding area of the substrate and is electrically connected to the substrate. [Embodiment] Referring to the attached drawings, the present invention will enumerate the following embodiments. According to a specific embodiment of the present invention, please refer to FIGS. 3 and 4, a package structure 200 of a hybrid integrated circuit (Hybrid 1C), which includes a substrate 210, a wafer 220, and a solid-state sealant 230 ( mol ding compound) " and a plurality of surface bonding elements 2 4〇, the material of the substrate 2 1 () may be βτ, FR-4 or FR-5, which has an upper surface 2n and a non-surface 212, The upper surface 211 includes a packaging area 2 13, a mold clamping area 214, and a bonding area 215. The packaging area 2 13 may be rectangular, and the packaging area 213 is formed with a plurality of bonding pads 216. The area 214 surrounds the packaging area 215 and is shaped like a sweet-scented shape. It is located between the packaging area 213 and the bonding area 215, and the width of the mold clamping area 21 4 is not less than i 0mni. The upper mold 3 丨 〇 is closed with the lower mold 3 20 (as shown in FIG. 5C). The bonding area 215 is formed with a plurality of bonding pads 217. The substrate 210 is provided with a glue injection port 218.

第8頁 200536073 五、發明說明(4) ί Sim表面211與下表面212,㈣隸人口218 mf 之角隅而鄰接該封裝區213,在本實施 * Λ注入口218係同時鄰接該封裝區213與該合模 ί Γ盆Ϊ = Ί20係為一種混裝型積體電路(Hybrid 料伽妒砼1°又方;s亥基板21 〇上表面211之封裝區213,並以複 數個鲜線250電性連接於該基板21〇之銲墊216,該固態封 勝230係藉由該基板21〇之封膠注入口218而模設— η⑷ 於該基板210上表面211之封裝區213 ’且填充於該封膠注 入口 21 8,以密封該晶片220與該些銲線25〇,較佳地,該 封膠注入口 2 1 8之側壁係形成有一金屬層2丨9,使得該固 封膠230在該封膠注入口218之模流較為平順,且必要時 係可將留置該封膠注入口 2丨8中之該固態封膠23 〇移除,該 些表面接合元件240係以銲料260固設於該結合區21 5之該 些結合墊2 1 7,並與該基板2 1 〇電性連接。 上述混裝型積體電路之封裝構造2 〇〇之製造方法,首 先’請參閱第5A圖,其係提供一基板21〇 ,該基板2 1〇之上 表面2 1 1係包含有該封裝區2丨3、該合模區2丨4及該結合區 215,該些銲墊216係形成於該封裝區213,該些結合墊217 係形成於該結合區2 1 5,該基板2 1 〇係具有一封膠注入口 218,其係貫通該基板21〇之上表面21]1與下表面212,該 膠注入口 21 8係設於該封裝區21 3之角隅而鄰接該封裝區 21 3,且該封膠注入口 21 8之側壁係形成有該金屬層21 9 ; 再請參閱第5 Β圖,貼設該晶片2 2 〇於該基板21 0之封裝區 213 ’並以該些銲線250電性連接於該基板210之銲墊216 ;Page 8 200536073 V. Description of the invention (4) ί Sim surface 211 and lower surface 212, the corner of the population 218 mf adjacent to the packaging area 213, in this implementation * Λ injection port 218 is adjacent to the packaging area 213 at the same time With this mold, Γ Ϊ Ϊ = 系 20 is a mixed-type integrated circuit (Hybrid material is 1 ° square); the substrate 21 〇 the packaging area 213 on the upper surface 211, and a plurality of fresh wires 250 Electrically connected to the solder pad 216 of the substrate 21, the solid seal 230 is molded through the sealant injection port 218 of the substrate 21—the packaging area 213 'on the upper surface 211 of the substrate 210 and filled A metal layer 2 丨 9 is formed on the side wall of the sealant injection port 2 1 8 at the sealant injection port 21 8 to seal the wafer 220 and the bonding wires 250. The mold flow of 230 at the sealant injection port 218 is relatively smooth, and if necessary, the solid sealant 23 in the sealant injection port 2 丨 8 can be removed. The surface bonding elements 240 are solder 260. The bonding pads 2 1 7 fixed in the bonding area 21 5 are electrically connected to the substrate 2 1 0. The above mixed type product The manufacturing method of the circuit packaging structure 2000, first of all, please refer to FIG. 5A, which is provided with a substrate 2110, the substrate 2 1O upper surface 2 1 1 contains the packaging area 2 3, the combination The die area 2 丨 4 and the bonding area 215, the bonding pads 216 are formed in the packaging area 213, the bonding pads 217 are formed in the bonding area 2 1 5 and the substrate 2 1 0 has an adhesive note The inlet 218 penetrates the upper surface 21] 1 and the lower surface 212 of the substrate 21, the glue injection port 21 8 is disposed at a corner of the packaging area 21 3 and is adjacent to the packaging area 21 3, and the sealing glue Note that the metal layer 21 9 is formed on the side wall of the entrance 21 8; referring to FIG. 5B again, the chip 2 2 0 is mounted on the packaging area 213 ′ of the substrate 21 0 and electrically connected by the bonding wires 250. Pads 216 on the substrate 210;

第9頁 200536073 五、發明說明(5) 再請參閱第5C圖,經由該封膠注入口 21 8,模設(molding) 該固態封膠2 3 0於該基板2 1 0之封裝區2 1 3,當該混裝型積 體電路之封裝構造200在封膠時,係以該上模具31〇與該下 模具320合模壓住該基板21〇之上表面21]1與下表面212,該 上模具310係具有一壓模面311與一模穴312,該壓模面311 係壓住該基板2 1 0之合模區2 1 4,使得該模穴3 1 2對應基板 210之該封裝區213,該下模具32 0係具有一流道321,該流 道32Γ係對應該基板210之封膠注入口218,以使得該固態 封膠2 3 0係經由該流道3 2 1流出,再經過該封膠注入口 2 1 8 注入該上模具310之該模穴312,以模設於該基板21〇上表 面2 11之該封裝區2 1 3,並且密封該晶片2 2 〇與該些銲線·®丨 250 ;再請參閱第4圖,利用銲料260將該些表面接合元件 240固設於該基板210之結合區213,並使該些表面接合元 件2 4 0與該基板211 0之該些結合墊2 1 7電性連接。 由於該基板21 0係具有一貫穿該上表面21]1與該下表面 2 1 2之封膠注入口 2 1 8,因此在製造該混裝型積體電路之封 裝構造200時,該固態封膠230可利用移轉注模(transfer mold)經由該基板2 10之下表面21 1經過該之封膠注入口218 而模设於戒基板2 1 0上表面2 11之該封裝區21 3,以密封該 晶片2 2 0與該些銲線2 5 0,取代習知之混裝型積體電路之 裝構造必須以液態封膠(1 i quid compound)密封該晶片21 〇 與該些銲線2 5 0,且不必在該基板2 1〇之上表面211設計習 知之流道區,以提高該混裝型積體電路之封裝構造2〇〇之 產能及產品信賴性,並降低成本。Page 9 200536073 V. Description of the invention (5) Please refer to FIG. 5C again, through the sealant injection port 21 8, mold the solid sealant 2 3 0 in the packaging area 2 1 0 of the substrate 2 1 3. When the package structure 200 of the mixed-type integrated circuit is sealed, the upper mold 31 and the lower mold 320 are clamped to press the upper surface 21] 1 and the lower surface 212 of the substrate 21, The upper mold 310 has a mold surface 311 and a cavity 312. The mold surface 311 presses the mold clamping area 2 1 4 of the substrate 2 1 0, so that the mold cavity 3 1 2 corresponds to the mold 210 of the substrate 210. In the packaging area 213, the lower mold 32 0 has a first-rate channel 321, and the flow channel 32Γ corresponds to the sealant injection port 218 of the substrate 210, so that the solid sealant 2 3 0 flows out through the flow channel 3 2 1. Then inject the cavity 312 of the upper mold 310 through the sealant injection port 2 1 8 to mold the packaging area 2 1 3 of the upper surface 2 11 of the substrate 21 and seal the wafer 2 2 0 and the These bonding wires are shown in FIG. 4. Referring to FIG. 4 again, the surface bonding elements 240 are fixed to the bonding region 213 of the substrate 210 by using solder 260 and the surface bonding elements are fixed. 2 4 0 is electrically connected to the bonding pads 2 1 7 of the substrate 21 10. Since the substrate 21 0 has a sealant injection port 2 1 8 penetrating the upper surface 21] 1 and the lower surface 2 1 2, the solid-state seal is used when manufacturing the package structure 200 of the mixed-type integrated circuit. The glue 230 can be transferred to the encapsulation area 21 3 of the upper surface 2 11 of the substrate 2 1 0 through the sealant injection port 218 through the lower surface 21 1 of the substrate 2 10 through a transfer mold. The wafer 2 2 0 and the bonding wires 2 50 are used to replace the conventional mixed-type integrated circuit. The structure of the chip must be sealed with a liquid compound (1 i quid compound) and the bonding wires 2 5 0, and it is not necessary to design a conventional flow channel region on the upper surface 211 of the substrate 2 10 to improve the production capacity and product reliability of the package structure 2000 of the mixed integrated circuit, and reduce costs.

200536073 五、發明說明(6) 本發明之保護範圍當視後附之申請專利範圍所界定者 為準,任何熟知此項技藝者,在不脫離本發明之精神和範 圍内所作之任何變化與修改,均屬於本發明之保護範圍。200536073 V. Description of the invention (6) The scope of protection of the present invention shall be determined by the scope of the appended patent application. Any person skilled in the art will make any changes and modifications without departing from the spirit and scope of the present invention. All belong to the protection scope of the present invention.

第11頁 200536073Page 11 200536073

圖式簡單說明 【圖式簡單說明】 ί阁\圖:習知之混裝型積體電路之封裝構造之俯視示 &圓, !^2.圖:習知之混裝型積體電路之封裝構造之截面示 第 3 圖:依據本發明之一 體電路之封裝構造之俯視示意 第 4 圖:依據本發明之一 電路之封装構造之截面示意圖 第5Α至5C圖:依據本發明之一 體電路之封裝構造之製造方法 構造之基板在製造過程中之截 具體實施例,一種混裝型積 圖; ~ 具體實施例,該混裝型積體 ,·及 具體實施例,一種混裝型迄· ,該混裝型積體電路之封 面示意。 元件符號簡單說明: I 0 0混裝型積體電路之封裝構造 112下表面 1 4 0 液態封膠 II 0基板 111上表面 11 3封裝區 11 4結合區 1 2 0晶片 1 3 0銲線 1 5 0表面接合元件 200 210 213 216 219 混裝型積體電路之封裝構造 基板 211上表面 封裝區 214合模區 銲墊 21 7結合墊 金屬層 220晶片Brief description of the diagram [Schematic description of the diagram] ί Ge \ Picture: Top view of the package structure of the conventional mixed-type integrated circuit & circle,! ^ 2. Figure: Package structure of the conventional mixed-type integrated circuit Sectional drawing 3: A schematic plan view of a packaging structure of a body circuit according to the present invention. FIG. 4: A schematic cross-sectional view of a packaging structure of a circuit according to the present invention. FIGS. 5A to 5C: A packaging structure of a body circuit according to the present invention. A specific embodiment of the manufacturing method of the substrate constructed in the manufacturing process, a mixed type product map; ~ a specific embodiment, the mixed type product, and a specific embodiment, a mixed type so far, the mixed type The cover of the integrated circuit is shown. Brief description of component symbols: I 0 0 Package structure of integrated circuit 112 Lower surface 1 4 0 Liquid sealant II 0 Substrate 111 upper surface 11 3 Packaging area 11 4 Bonding area 1 2 0 Chip 1 3 0 Welding wire 1 5 0 Surface-bonding component 200 210 213 216 219 Package structure substrate for mixed integrated circuit 211 Upper surface packaging area 214 Molding area solder pad 21 7 Bonding pad metal layer 220 Wafer

2 1 2下表面 21 5結合區 218封膠注入口 230固態封膠2 1 2 Lower surface 21 5 Bonding area 218 Seal injection port 230 Solid sealant

第12貢 200536073 圖式簡單說明 2 4 0 表面接合元件2 5 0 辉線 3 1 1 壓模面 3 2 1 流道 2 6 0銲料 3 1 2模穴 3 1 0 上模具 320下模具 第13頁 ΜThe 12th tribute 200536073 Brief description of the drawing 2 4 0 Surface bonding element 2 5 0 Glow line 3 1 1 Mold surface 3 2 1 Flow channel 2 6 0 Solder 3 1 2 Mold cavity 3 1 0 Upper mold 320 Lower mold page 13 Μ

Claims (1)

200536073 六、申請專利範圍 【申請專利範目 1、 一種混裝 一基板, 包含有一封裝 該封裝區,該 之上表面與下 一晶片, 連接; 一固態封 於該基板之封 複數個表 與該基板電性 2、 如申請專 構造,其中該 3、 如申請專 構造,其中該 4、 如申請專 構造,其中該 5、 如申請專 構造,其中該 6、 如申請專 構造,其中該 區。 7、 一種混裝 盟積體電路之封裝構造,包含·· ,係具有一上表面及一下表面,該上表面係 區、一合模區及一結合區,該合模區係圍繞 基板係具有一封膠注入口,其係貫通該基板 表面並鄰接該封裝區; 其係設於該基板之封裝區,並與該基板電性 膠,其 裝區, 面接合 連接。 利範圍 固態封 利範圍 合模區 利範圍 封膠注 利範圍 封膠注 利範圍 封膠注 型積體 係藉由該封膠注入口而模設(molded) 以密封該晶片;及 元件’其係設於該基板之結合區, 11項所述之混裝型積體電路之封裝 膠係填充於該封膠注入口。 第1項所述之混裝型積體電路之封裝 之寬度係不小於1. 〇_。 、 第1項所述之混裝型積體電路之封 入口之側壁係形成有一金屬層。χ 第1項所述之混裝型積體電路之封 入口係設於該封裝區之角隅。、、 第1項所述之混裝型積體電路之 入口係同時鄰接該封裝區與該入'模I 電路之封裝構造,包含:200536073 6. Scope of patent application [Patent for patent application 1. A mixed substrate includes a package area, the upper surface of which is connected to the next chip; a solid-state package of several watches and the Substrate electrical properties 2, such as applying for a special structure, where the 3, such as applying for a special structure, where the 4, such as applying for a special structure, where the 5, such as applying for a special structure, where the 6, such as applying for a special structure, and the area. 7. A packaging structure for a mixed integrated circuit, including ..., having an upper surface and a lower surface, the upper surface system area, a mold clamping area, and a bonding area, the mold clamping area having A glue injection port penetrates the surface of the substrate and abuts the packaging area; it is provided in the packaging area of the substrate, and is electrically connected to the substrate's electrical glue, its mounting area, and surface. The solid-state sealing range, the clamping range, the sealing range, the sealing range, the sealing range, the sealing range, the sealing range, and the sealing-molding system are molded by the sealing injection port to seal the chip; It is set in the bonding area of the substrate, and the sealing glue of the mixed type integrated circuit described in item 11 is filled in the sealing glue injection port. 〇_。 The width of the package of the mixed type integrated circuit described in item 1 is not less than 1. 〇_. 2. The side wall of the entrance of the sealed integrated circuit described in item 1 is formed with a metal layer. The sealed inlet of the mixed type integrated circuit described in item 1 is located at the corner of the package area. The entrance of the mixed-type integrated circuit described in item 1 is the packaging structure adjacent to the packaging area and the input mode circuit at the same time, including: 200536073 六'申請專利範圍 一基板, 包含有一封裝 該基板係具有 下表面並鄰接 ,一晶片, 連接;及 其係具有一上表面及一下表面,該上表面係 區及一合模區,該合模區係圍繞該封裝區/ 一封膠注人口,其係貫通該基板之上^二I 該封裝區; ^ 其係設於該基板之封裝區,並與該基板電性 於該基板之封 該封膠注入口 8、 如申請專 構造,其中該 9、 如申請專 構造,其中該 10、如申請專 構造,其中該 1 1、如申請專 構造,其中該 區。 12、一種混裝 提供一基 上表面係包含 區係圍繞該封 通該基板之上 貼設一晶 一固態封膠,其係藉由該封膠注入口而模設(m〇ided) 裝區,以密封該晶片,該固態封膠係填充於 利範圍第7項所述之混裝型積體電路之封裝 合模區之寬度係不小於丨.0mm。 利範圍第7項所述之混裝型積體電路之封裝 封膠注入口之側壁係形成有一金屬層。 利範圍第7項所述之混裝型積體電路之封裝 封膠注入口係設於該封裝區之角隅。 利範圍第7項所述之混裝型積體電路之封裝 封膠注入口係同時鄰接該封裝區與該合模 型積體電路之封裝構造之製造方法,包含: 板’該基板係具有一上表面及一下表面, 有一封裝區、一合模區及一結合區,該合模 裝區’該基板係具有一封膠注入口,其係貫 表面與下表面並鄰接該封裝區; 片於该基板之封裝區,該晶片係與該基板電200536073 Six 'patent application scope a substrate, including a package, the substrate has a lower surface and abutting, a chip, connected; and its system has an upper surface and a lower surface, the upper surface system area and a mold clamping area, the combination The mold area surrounds the packaging area / one glued population, which passes through the substrate ^ III the packaging area; ^ It is located in the packaging area of the substrate, and is electrically sealed to the substrate with the substrate The sealant injection port 8 is applied for a special structure, wherein the 9, is applied for a special structure, wherein the 10, is applied for a special structure, wherein 11, is applied for a special structure, and the area. 12. A mixed package provided with a base upper surface including a region is mounted on the substrate through a crystal-solid sealant, which is molded through the sealant injection port. In order to seal the chip, the solid sealant is filled in the package clamping area of the mixed type integrated circuit described in the profit range item 7 with a width of not less than 0. 0mm. A metal layer is formed on the side wall of the sealant injection port of the mixed type integrated circuit as described in the seventh item of the utility model. The encapsulation of the mixed integrated circuit described in item 7 of the scope of interest is provided at the corner of the packaging area. The method for manufacturing a package seal injection port of the mixed type integrated circuit described in item 7 of the utility model is adjacent to the packaging structure of the packaging area and the combined integrated circuit. The manufacturing method includes: On the surface and the lower surface, there is a packaging area, a mold clamping area, and a bonding area. The mold clamping area 'the substrate has a glue injection port, which runs through the surface and the lower surface and is adjacent to the packaging area; Package area of a substrate, the chip is electrically connected to the substrate 200536073200536073 性連接; 經由该封膠注入口,模設(molding) —固態封膠 基板之封裂區,以密封該晶片;及 、〜 固設複數個表面接合元件於該基板之結合區,該此表 面接合元件係與該基板電性連接。 一 1 3、如申請專利範圍第丨2項所述之混裝型積體電路之封裝 構造之製造方法,其中該固態封膠係填充於該封膠注入、 π 〇 1 4、如申請專利範圍第1 2項所述之混裝型積體電路之封裝 構造之製造方法,其中該合模區之寬度係不小於h 〇mm 1 5、如申請專利範圍第1 2項所述之混裝型積體電路之封 構造之製造方法,其中該封膠注入口之側壁係形成有_金 屬層。 16、如申請專利範圍第12項所述之混裝型積體電路之封裝 構造之製造方法,其中該封膠浲入口係設於該封裝區之角 隅。 1 7、如申請專利範圍第丨2項所述之混裝型積體電路之封裝 構造之製造方法,其中該対#浲入口係同時鄰接該封裝區 與該合模區。Through the sealant injection port, molding—a sealing region of the solid-state sealant substrate to seal the wafer; and ~ fixing a plurality of surface-bonding elements to a bonding region of the substrate, the surface The bonding element is electrically connected to the substrate. 1-3. The manufacturing method of the packaging structure of the mixed type integrated circuit as described in item 丨 2 of the scope of patent application, wherein the solid-state sealant is filled in the sealant injection, π 〇4, as in the scope of patent application The manufacturing method of the packaging structure of the mixed type integrated circuit described in Item 12, wherein the width of the mold clamping area is not less than h 0 mm 15. The mixed type described in Item 12 of the scope of patent application A method for manufacturing a sealed structure of an integrated circuit, wherein a sidewall of the sealant injection port is formed with a metal layer. 16. The manufacturing method of the package structure of the mixed-type integrated circuit as described in item 12 of the scope of the patent application, wherein the inlet of the sealant is set at a corner of the packaging area. 17. The manufacturing method of the package structure of the mixed type integrated circuit as described in item 2 of the patent application scope, wherein the 対 # 浲 entrance is adjacent to the packaging area and the mold clamping area at the same time.
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