TW200520103A - Control of phosphorus profile by carbon in-situ doping for high performance vertical PNP transistor - Google Patents

Control of phosphorus profile by carbon in-situ doping for high performance vertical PNP transistor

Info

Publication number
TW200520103A
TW200520103A TW093132852A TW93132852A TW200520103A TW 200520103 A TW200520103 A TW 200520103A TW 093132852 A TW093132852 A TW 093132852A TW 93132852 A TW93132852 A TW 93132852A TW 200520103 A TW200520103 A TW 200520103A
Authority
TW
Taiwan
Prior art keywords
carbon
pnp transistor
control
high performance
situ doping
Prior art date
Application number
TW093132852A
Other languages
English (en)
Inventor
Hiroshi Yasuda
Badih El-Kareh
Manfred Schiekofer
Scott Balster
Original Assignee
Texas Instruments Deutschland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Deutschland filed Critical Texas Instruments Deutschland
Publication of TW200520103A publication Critical patent/TW200520103A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
TW093132852A 2003-10-31 2004-10-29 Control of phosphorus profile by carbon in-situ doping for high performance vertical PNP transistor TW200520103A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10351100A DE10351100B4 (de) 2003-10-31 2003-10-31 Verfahren zur Herstellung eines vertikalen PNP-Transistors aus einem Halbleiterwerkstoff und vertikaler bipolarer PNP-Transitor

Publications (1)

Publication Number Publication Date
TW200520103A true TW200520103A (en) 2005-06-16

Family

ID=34399642

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093132852A TW200520103A (en) 2003-10-31 2004-10-29 Control of phosphorus profile by carbon in-situ doping for high performance vertical PNP transistor

Country Status (5)

Country Link
US (1) US20050118771A1 (zh)
EP (1) EP1528598A1 (zh)
JP (1) JP2005136424A (zh)
DE (1) DE10351100B4 (zh)
TW (1) TW200520103A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011108334B4 (de) * 2011-07-25 2016-05-25 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zum Erhöhen der Zuverlässigkeit von Bipolartransistoren unter Hochspannungsbedingungen

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177025A (en) * 1992-01-24 1993-01-05 Hewlett-Packard Company Method of fabricating an ultra-thin active region for high speed semiconductor devices
EP0717435A1 (en) * 1994-12-01 1996-06-19 AT&T Corp. Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby
JP3549408B2 (ja) * 1998-09-03 2004-08-04 松下電器産業株式会社 バイポーラトランジスタ
DE10005405A1 (de) * 2000-02-04 2001-08-09 Inst Halbleiterphysik Gmbh Schichtstapel für pnp-Heterobipolar-Transistor
US6576535B2 (en) * 2001-04-11 2003-06-10 Texas Instruments Incorporated Carbon doped epitaxial layer for high speed CB-CMOS
US20030082882A1 (en) * 2001-10-31 2003-05-01 Babcock Jeffrey A. Control of dopant diffusion from buried layers in bipolar integrated circuits
DE10160511A1 (de) * 2001-11-30 2003-06-12 Ihp Gmbh Bipolarer Transistor
US6759674B2 (en) * 2002-02-04 2004-07-06 Newport Fab, Llc Band gap compensated HBT
JP3976601B2 (ja) * 2002-03-28 2007-09-19 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2003297761A (ja) * 2002-04-03 2003-10-17 Matsushita Electric Ind Co Ltd エピタキシャル成長方法

Also Published As

Publication number Publication date
JP2005136424A (ja) 2005-05-26
US20050118771A1 (en) 2005-06-02
EP1528598A1 (en) 2005-05-04
DE10351100A1 (de) 2005-06-16
DE10351100B4 (de) 2007-02-08

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