TW200509759A - Circuit device - Google Patents

Circuit device

Info

Publication number
TW200509759A
TW200509759A TW093118742A TW93118742A TW200509759A TW 200509759 A TW200509759 A TW 200509759A TW 093118742 A TW093118742 A TW 093118742A TW 93118742 A TW93118742 A TW 93118742A TW 200509759 A TW200509759 A TW 200509759A
Authority
TW
Taiwan
Prior art keywords
semiconductor element
lead
circuit device
metal wire
connected electrically
Prior art date
Application number
TW093118742A
Other languages
English (en)
Other versions
TWI299966B (en
Inventor
Makoto Tsubonoya
Katsuhiko Shibusawa
Takashi Kitazawa
Original Assignee
Sanyo Electric Co
Kanto Sanyo Semiconductors Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co, Kanto Sanyo Semiconductors Co filed Critical Sanyo Electric Co
Publication of TW200509759A publication Critical patent/TW200509759A/zh
Application granted granted Critical
Publication of TWI299966B publication Critical patent/TWI299966B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
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    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49589Capacitor integral with or on the leadframe
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/0554External layer
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
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    • H01L2924/13Discrete devices, e.g. 3 terminal devices
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    • H01L2924/1305Bipolar Junction Transistor [BJT]
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    • H01L2924/19101Disposition of discrete passive components
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    • H01L2924/19107Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
TW93118742A 2003-08-20 2004-06-28 Circuit device TWI299966B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003208094A JP4471600B2 (ja) 2003-08-20 2003-08-20 回路装置

Publications (2)

Publication Number Publication Date
TW200509759A true TW200509759A (en) 2005-03-01
TWI299966B TWI299966B (en) 2008-08-11

Family

ID=34190092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93118742A TWI299966B (en) 2003-08-20 2004-06-28 Circuit device

Country Status (5)

Country Link
US (1) US7332803B2 (zh)
JP (1) JP4471600B2 (zh)
KR (1) KR100652106B1 (zh)
CN (1) CN100474579C (zh)
TW (1) TWI299966B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423417B (zh) * 2007-09-28 2014-01-11 Renesas Electronics Corp 半導體裝置

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JP4701779B2 (ja) * 2005-03-25 2011-06-15 日本電気株式会社 集積回路パッケージ組立構造
JP4744320B2 (ja) * 2005-04-04 2011-08-10 パナソニック株式会社 リードフレーム
JP2008078445A (ja) 2006-09-22 2008-04-03 Yamaha Corp リードフレーム
JP2008147438A (ja) * 2006-12-11 2008-06-26 Nec Electronics Corp 半導体装置
DE102006060429B4 (de) * 2006-12-20 2013-08-22 Epcos Ag Elektrisches Bauelement mit Leadframe-Strukturen
JP5543724B2 (ja) 2008-08-28 2014-07-09 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 樹脂封止型半導体装置及びその製造方法
JP5634033B2 (ja) 2008-08-29 2014-12-03 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 樹脂封止型半導体装置とその製造方法
JP5257096B2 (ja) * 2009-01-23 2013-08-07 サンケン電気株式会社 半導体装置
JP2010258289A (ja) * 2009-04-27 2010-11-11 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2018107416A (ja) * 2016-12-28 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6743802B2 (ja) * 2017-11-22 2020-08-19 Tdk株式会社 半導体装置
TWI781863B (zh) * 2021-12-30 2022-10-21 宏齊科技股份有限公司 平面式多晶片裝置

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JPS5324256U (zh) * 1976-08-05 1978-03-01
JPS61137352A (ja) * 1984-12-10 1986-06-25 Hitachi Ltd 半導体装置
JPH01308058A (ja) * 1988-06-06 1989-12-12 Hitachi Ltd 電子装置
JPH03219663A (ja) * 1990-01-25 1991-09-27 Seiko Epson Corp 半導体装置用リードフレーム
JPH04249655A (ja) * 1990-12-29 1992-09-04 Mazda Motor Corp 無段変速機
JPH05291485A (ja) * 1992-02-14 1993-11-05 Fuji Electric Co Ltd 半導体装置
US6424035B1 (en) * 1998-11-05 2002-07-23 Fairchild Semiconductor Corporation Semiconductor bilateral switch
US6777785B1 (en) * 1999-08-25 2004-08-17 Winbond Electronics Corp. Lead frame containing a master and a slave IC chips and a testing circuit embedded within the master IC chip
JP3702152B2 (ja) * 2000-06-29 2005-10-05 三洋電機株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423417B (zh) * 2007-09-28 2014-01-11 Renesas Electronics Corp 半導體裝置

Also Published As

Publication number Publication date
CN1585125A (zh) 2005-02-23
US7332803B2 (en) 2008-02-19
JP4471600B2 (ja) 2010-06-02
TWI299966B (en) 2008-08-11
KR100652106B1 (ko) 2006-12-06
KR20050020930A (ko) 2005-03-04
CN100474579C (zh) 2009-04-01
JP2005064076A (ja) 2005-03-10
US20050040512A1 (en) 2005-02-24

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