TWI299966B - Circuit device - Google Patents

Circuit device Download PDF

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Publication number
TWI299966B
TWI299966B TW93118742A TW93118742A TWI299966B TW I299966 B TWI299966 B TW I299966B TW 93118742 A TW93118742 A TW 93118742A TW 93118742 A TW93118742 A TW 93118742A TW I299966 B TWI299966 B TW I299966B
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TW
Taiwan
Prior art keywords
lead
circuit device
circuit
package
semiconductor
Prior art date
Application number
TW93118742A
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English (en)
Other versions
TW200509759A (en
Inventor
Makoto Tsubonoya
Katsuhiko Shibusawa
Takashi Kitazawa
Original Assignee
Sanyo Electric Co
Kanto Sanyo Semiconductors Co
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Publication date
Application filed by Sanyo Electric Co, Kanto Sanyo Semiconductors Co filed Critical Sanyo Electric Co
Publication of TW200509759A publication Critical patent/TW200509759A/zh
Application granted granted Critical
Publication of TWI299966B publication Critical patent/TWI299966B/zh

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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Description

1299966 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種具有延伸於外部之引線作為外部端 子的電路裝置。 【先前技術】 翏照第5圖說明先前型之電路裝置1〇〇的構成。第$ 圖（A)為電路裝置1〇〇之平面圖，第5圖為其剖視圖（來 照專利文獻1)。 > 參照第5圖（A)及第5圖（B)，在電路裝置1〇〇之中央 部形成有由導電材料構成之焊盤（land)1〇2，多個引 Μ 1之一端介由金屬細 一端自密封樹脂1〇3 之一端接近焊盤102之周圍。引線ι〇1之 線105與半導體元件104電連接，而另一 露出。密封樹脂103具有密封半導體元件1〇4、焊盤 及引線101並支持成一體的作用。 (專利文獻1) 曰本專利特開平11-340257號公報 【發明内容】 (發明所欲解決之問題）
種具有引線且在内部能構成電路之電 315984 5 1299966 路裝置。 (解決問題之手段） 本發明之特徵在於包含：複數個半導體元件；第1引 線群，與上述半導體元件之搭接焊墊（Bondingpad)相連接 並導出至封裝之外部用以構成外部端子；以及第2引線 群’在上述封裝内部用以連接上述半導體彼此間。 本發明之特徵在於包含··第！半導體元件及第2半導 體疋件；第1引線，介由金屬細線與上述第丨半導體元件 或上述第2半導體元件電性連接，而其端部導出至外部； 以及第2引線，介由金屬細線電性連接在上述第工半導體 元件及上述第2半導體元件之雙方上，用以電性連接上述 第1及上述第2半導體元件。 接近本發明之特徵在於包含:第i引線;第2引線 2電路元件 更且，
係包含島部（island)、 、具有 1階梯部； 並設有朝_ 上述第1 \ 部及上述j 更且， 引線，介d 而其端部_ 315984 6 1299966 外部引線之第丨引線及設於上述島部上之半導體元件者， 該外部引線係介由將其一端接近設於上述島部周圍之内部 ” 引線而使其另一端自密封樹脂突出所構成，其特徵在於：· 具有配線引線，該配線引線自上述密封樹脂所構成之封裝 側邊的一區域延伸至上述封裝之内部，並自上述内部延· 伸至上述封裝之一侧邊的另一區域；介由上述配線引線，· 將上述半導體元件與密封在上述封裝内且和上述半導體元 件為不同之其他電路元件進行電性連接。 更且，本發明之電路裝置，係包含複數個島部、具有馨 外部引線之第1引線及分別設於上述複數個島部上之半導 體元件者，該外部引線係介由將其一端接近設於上述複數 個島部周圍之内部引線而使其另一端自密封樹脂突出所構 成’其特徵在於：具有配線引線，該配線引線自上述密封♦ 樹脂所構成之封裝-侧邊的一區域延伸至上述複數個^部· 之附近，並自上述附近延伸至上述封裝之一側邊的另一區 域，介由上述配線引線，電性連接密封於上述封裝内之 述複數個半導體元件。 _ 【實施方式】 本發明係關於-種在封裝内包含具有配線功能之引 ‘ 線，用以實現所謂SIP(系統封裝）之技術者。 · -般而言，引線架具有一個或二個左右之“ · (island)，於其周圍配置有一端接近島部之内部引線、及各-作電極而構成並自封裝朝外部導出作為外部引線之—系: 的引線'然後在各自之島部上設有半導體晶片，在半導體. 315984 7 1299966 晶片之各自的電極中 述引線。換句話說為 用上述引線。 ，為了使輸入/輸出訊號通過而採用上 了在半導體it件間進行連接而沒有採 但是例外有2個。第i、 的堆疊型多晶片封裝，第2、 之平面型多晶片封裝。 為疊層有半導體元件所構成 為島部與島部之間設作橋樑
、弟1堆宜型中，引線係為了在半導體元件間進行 接而被活用者。但是該引線，被採用作為外部引線電極( 另方面在第2平面型多晶片中，於島部間配置有橋樑， 並利=該橋樑進行電性連接。此係用以連接設於互為相斐 之半導體晶片之侧邊的電極彼此間者。該橋 黏接片來貼合保持著。 例如於第丨时，具有卿祕狀之第25丨線，係本 申睛案之重點’並活用該引線作為配線者。第ι圖中為了 連接複數個半導體元件之間，第4圖中為了連接半導體元 件與被動元件’而採用引線。該引線，本來並非盥安裝基 板上之電極進行電性連接者。因而，在封裝内部，只要二 於島部之周圍即可，其形狀並未被限定。 在此，考慮及第2引線落下之情況，乃以可利用上下 之金屬模來保持之^進行如鉤形括弧之配置。又，若採 用黏接膠帶，則無使用鉤形括弧之理由。另外，本發明中， 所明内部引線’係指内藏於封裝或密封樹脂内之部分的引 線。又’所謂配線引線，係指具有電性連接電路元件彼此 間之任務的引線。又，本發明中所謂引線，除以下實施例 315984 8 1299966 所不之框表狀的引線外，尚包含形成於安裝基板上 圖案等。 守电 參照第1圖說明本發明之電路裝置的詳細構成。第！ ，係說明本發明之電路裝置1()的平面圖。參照該圖，電路 〇之構成包含··第1半導體元件13A及第2半導體 :件第i引線UA ’介由金屬細線W與 =Γ13Α或第2半導體元件⑽電性連接且其端部導出 U第2引線11B，介由金屬細線15C 幻+導體元件UA及第2半導體元件13B ^ 二電性連接第！及第2半導體元件13a、13b。以下用 该種的各構成要素。 第1半導體元件13A例如為 電：ΤΓ!:大!積體電路)晶片，介由黏接劑固接 Si:: 部附近的第1島部12A±。作為在此 電性物、或樹脂製之絕緣性物雙方。 ^1之¥ 第2半導體元件13B係例如與上述第】半導體元件 目同的LSI晶片’固定在連續 島邻1 μ 弟1島部12Α之第2 σ 。又’上述之兩島部亦可作電性隔離。 .部12Α及第2島部12β，係利用衝壓或蝕刻， =由成形”之導電所形成。又，第第 島部12B’係介由連結部^ : 於上方之第！島部12A，係自在紙面上，位 * 1 馬口P 12A 之上都 士* & 電路裳置之上部左右角部延伸有懸吊引線^更 315984 9 1299966 1在紙面上’位於下方之第2島部12B，係自第2島部 Μ =部左右角部，至電路裝置之下部左右角部延伸有 :吊19。該懸吊引、線19，在電路裝置Η)之製造㈣ 中，具有機械性支撑第1島部12Α及第2島部12Β之作用。 -杜Ή線11Α，—端介由金屬細線ΐ5Α與第1半導體 U或第2半導體元件13Β連接。然後，第1引線 右你端，自密封全體之密封樹脂16導出至外部，具 有作=與外部進行電訊號之輸出人的外部端子之功能。 13A電：介由金屬細線说與第1半導體元件 13B電性ίΓ Γ介由金屬細線與第2半導體元件 元件咖可介由金屬細線^;體;^3A與第2半導體 .祕品L 及弟2引線11B電性連接。 /置H)之Λ1/第2半導體元件13a、i3b，係在電路 …方附近整齊排列配置於上下方向。然後，以 :右二向包夹經整齊排列之第i及第2半導體元件 包夾第！及第2半導體第2引線ιιβ。亦即，以 入示Ζ千¥體兀件13Α、13 第2半導體元件13Α、13Β整齊排列之方J 1及 引線仙。又，第2引㈣/排狀方向，延伸有第2 延伸。 、、’1 B之兩端係自密封樹脂朝外部 要辛係在電路裝置1〇内部不與其他的構成 ^素^仃電性連接，而其端部自密封 成 又，電路裝置10之用、息加 罚外# ¥出〇 之周邊部，以大略等間隔導出上述之第丨 315984 10 1299966 =形成端子部。在此，在紙面上之電路 :、工右端部之第2引線11B所包夾的區域上，設 有禝數個第3引線UC。 又 仰密封樹脂16具有被覆第1及第2半導體元件13A、 、引線il及金屬細線15以支撐全體的作用。又亦 L而41引線11之月面露出的構成’亦可包含引線11之背 面而利用密封樹脂16來被覆全體。 之第丨=之重點’在於㈣電性連接半導體元件彼此間 之弟2引線11B。說明採用第 1及第2半導體元件13a、Ub相斜夕潘二。又於弟 13B相對之邊上的電極彼此間， ^此係利用金屬細線15B直接電性連接。然而，只利用金 細線15來電性連接形成於第1及第2半導體元件13A : 13B相對之邊以外之部位上的電極彼此間是很困難的。因 此，本發明藉由採用第2引線11B來解決此問題。例如， 介由金屬細線15C，電性連接在紙面上設於第導體元 件ΠΑ之橫周邊部上的電極、及第2引線uB。然後，第 2引線11B，自帛i半導體元件ΠΑ之橫周邊部，至第2 半導體元件之橫周邊部，延伸於紙面上之上下方向。缺後， 介由金屬細線15C ’電性連接第2半導體元件削與第2 引線11B。藉此’即可介由上述第2引線來電性連接除盘 第2半導體元件13B鄰接之邊以外之部位的第w導體元 件13A之取出電極、及除與第i半導體元件μ鄰接之邊 以外之部位的第2半導體元件13B之取出電極。 更且，藉由介由金屬細線15連接引線u彼此間，即 315984 11 1299966 Ζ:ί成更：的配線。在此說明介由金屬細線15及引線11 γ連接第1半導體元件13Α之電極E1、與第2半導體 ^件13B之電極E2的構成。在此，所謂電極E1，係設於 舁第2半導體元件13B鄰接之邊相對之周邊部之第工半導 體=件13A上的取出電極。然後，所謂電極，係設於 舁第1半導體元件13A鄰接之邊相對之 體f件13B上的取出電極。電極E1係介由金屬細二 Μ1相連接，第1引線Μ1係介由金屬細線 =在第2引線11B1之紙面上部。第2引線麗係 ==及第2半導體元件13A、13B之紙面右侧側方 向。然後，介由金屬細線15E電性連接第2引線 1之紙面下部、與電極E2。 就第1引線11A1附近之電性連接構造加以說明。第！ —方的端部’係自形成封裝外形之密封樹脂 =月夕Μ導出而形成外部端子。然後，第i引線_之
方的端部，係延伸至作為電路元件之第！半導體元件 A的附近’並利用金屬細線15A與第 之搭接焊墊電性連接 '然後，第WA =係數介，金屬細線-電性連接。在此，心 ，越複數㈣線而電性連接引線彼此間 日 可“使用引線所構成之配線的自由度。又，第】 = 具有—方朝外部導出以構成外部 同時精由上述金屬細線15D之連接，即可具有作為^於 315984 12 1299966 封裝内之配線圖案的局部之功能。 又’第1圖所示之電路裝詈φ , ^ 引緩HR月楚1 η丨& ’由弟1引線11A、第2 及弟3引線11C的端部所構成的外部端子丄 :咖曰16之四周邊部以大略等間隔導：自 疒子固接於安裝基板上，即可進行電路=，外 且可使電路裝置10之安裝穩定化。 之文衣， 參照第2圖，說明其他形態 圖所示之電路裝置的基本構成係與成。同 下將以不同部位為主加以說明。 ㈡斤丁者相同，以 第3半導體元件13c係例如 其固接在設於第2引線11B之中途曰體晶片等， 後，介由金屬細線15，半導體 3 **—M2C上。然 半導，元株就可直接連接在第1 + =體兀件13A或苐2半導體元件ΐ3β上 ^牛況亦可介由金屬細線15電性連接在第】或第^體 、，泉11A、11B上。同圖中 二 引 m m 接近連結部18之方式， 第：二突出並延伸之2個第3島部12C。 …弟4+V體兀件13D係LSI晶片等， 半導體元件13B之表面上。亦即 半 ㈣、及固接於該第2半導體元件導體-件 件UD，可實現堆曼構造。χ 導體元 由金屬細線15與第！引線11Α第2+二體…3D係介 電路元件電性連接。弟2引線^或其他的 封谢二1引線11B，在此係成為内藏於構成封裝外形之褒 封树脂内的形式。亦即，第2引請之主要任務由； 315984 13 1299966 係使内藏之電路元件彼此間進行電性連接，所以如 全體内藏於封震内部。又，在此，成為已省略第3引線uc 之構成。因而，可提供經簡化之構成的電路妒置。 =膠帶25’具有支擇第2引線UB之:務:亦即， 弟2引線11B由於各個作機械式分離， 脂之形成的步驟為止，需要有機械式支擇該等丁^封= 此藉由使用支撐謬帶25，自背面或表面固定第二=如 即可防止製程途中，第2引線UB之位 且 體而言，支_帶25,具有將複數個第2引線仙固定於 引、線UA或其他引線上的作用。又，進行樹脂密封時，、 等所構成之黏接片貼合引線全體之背面，而進 仃树知狁封。可防止樹脂繞進引線背面。 次：㈣第3圖㈧，說明設於形成有金屬細線15C 口立之第2引線11B上的階梯部17之詳細。該圖係自 方向親看第】圖所示之區域A的圖。階梯部Η之構成 延伸於水平方向之第2引線11β朝斜上方延伸的傾 斜# 20、及自傾斜部2〇延伸於水平方向的平坦部η。利 ^亥，成，可使平坦部21之位置位於比其他之第2引線 上方又’由於平坦部21係介由傾斜部20而連接， 提高階梯部17之剛性，且可防止打線接合時之超音 ^月匕里分散。上述之階梯部17亦可設於第2引線上， 亦可設於第1引線11A上。
^照第3圖⑻’說明第2引線11B與半導體元件13 構造。同圖係自X2方向觀看第】圖所示之區域A 315984 14 1299966 的圖。金屬細線15c，超越至少一個引、線11之上方，而連 於第2引線UB之階梯部17上。利用該構成，可 门至屬、田線15C全體之位置，並可增大金屬細線况與 線1、1(尤其疋位於階梯部17之最接近的第2引線1⑼ :隙” 口而禾J用金屬細線15C之本身重量、或樹脂密 、日寸之壓力’即使金屬細、線15C朝下方變形之情況，亦可 ^止L伸於h梯部17與半導體元件間之第2引線仙 與金屬細線15C接觸。 參照第3圖（C)，在此接近島部12之第2引線㈣與 =接於島部12上之半導體元件13可介由金屬細線i5C連 ^ 1如此，在連接半導體元件Π與離其最接近之引線η 、U況不在連接有金屬細線15C之部位的引線11Β上設 f皆梯部17，即可進行兩者之連接。亦即，此為通常的打 線接合。 ^ ΐ “弟圖⑴）’在此將設於引線11途中之階梯部17 彼此間’利用超越複數個引線11之金屬細線15C來連接。 亦即利用球形接合來連接—方之階梯部17與金屬細線 15C，利用楔形接合來連接另一方之階梯部㈣金屬細 f照第4圖’說明其他形態之電路裝置3G的構成。第 外圖=)為私路震置3〇之平面圖，第4圖⑻為自以方向 觀看第4圖(A)之區域c的剖視圖。同圖所示之電路裝置 的基本構成係與第1圖所示者相同，差異點在於晶片元 件44之連接構造。 315984 15 1299966 包岭装置30之構成包合·楚^ w a 引線31B，接近第！引線31A\—方^ ;第2 出之第1階梯部45Ah 延伸，且朝上方突 i引㈣之另一方:::途中；第3引線…^ 45B Μ^Ίτ m ^ 申且朝上方突出之第2 P皆梯邱
45B接近第"皆梯部45八而設；以 WP 第1引線31A之方气入Λ 日日片兀件44,以跨越 及第2階梯部45Β上。在此 曰口妾在弟1階梯部45Α 晶片電阻或晶片電容哭，1入明日日凡件44係例如為 線電連接。合"其介由谭錫等之烊接材料仏與引 參照第4圖⑻，設於晶片元件 線31，係介由煤l ^ 兩鳊的電極與引 接材枓46而連接。然後，以將箆？ d始
31B ^ * 1 P, # „ 45a. ^ ^ 3 31C ^ ^ 2 ' fR 進行架橋的方式載置有晶u件44。因而，利 之形成則晶片元件44對5丨線31之 止用於曰y - 9艾回。由此可防 :::件44之連接的焊接材料46、與其他引線3】 之方==晶片元件44’係以跨越第1引、_ 之方式，連接在第2及第3引線31Β、31 由以跨越第1引線31Α之方式配 如此，猎 較大型之晶片電容器等的晶片元株 件44,即可採用 件44之女丨 ^ 日日 件。又，亦可按照晶片元 之大小，以跨越複數個第丨引 第2及第3引線31B、31C。又，口夕咖之方式’形成 甘μ μ 上述之階梯部45，當與 /、雜之引線31相較時由於其寬度 ς 止焊接材料46之洩漏。 又权見所以了防 315984 16 1299966 a上述說明中雖就具有引線之型式的封裝進行說明，但 是亦可使上述構成適用於其他型式之封裝中。例如，亦; 使上述構成適用於使用QFP(QuadFlatPackage :四方平坦 構裝）或 QFN(QuadFlatNon_leadedpackage)、玻璃環氧基 板等内插板之封裝等其他形態的封裝中。 土 (發明效果） 本發明可達成如下所述之效果。 在延伸於複數個半導體元件之整齊排列方向的方向上 延伸有第2引線’介由該第2引線與金屬細線，電性連接 半導體元件彼此間H以採用彳丨線之構造，可獲得較 為複雜之配線構造。又’即使在電路裝置内部之電路中】 生叹计變更之情況’也不用變更引線之圖案，只要進行形 成有金屬細線部位之變更、或金屬細線之數目增減即可進 行某程度之對應。 1 j進
更且’本發明在引線之中途設置朝上方突出之階梯 部’以使進行半導體元件㈣線之連接的金屬細線連接 該階梯部上。藉此由於可使金屬細線全體之位置位於引 之更上方’所以即使金屬細線报長之情況，亦可防止金 細線與引線之不必要的接觸 “ 个乂要的接觸。又，亦可介由焊接材料將, ^妾m梯部上。藉由該構成即可防止焊接材3 與其他引線之短路。 【圖式簡單說明】 第1圖係說明本發明之電路裝置的平面圖 第2圖係說明本發明之電路裝置的平面圖 315984 17 1299966 第3圖係說明本發明之電路裝置的剖視圖（a)_(D)。 第4圖係說明本發明之電路裝置的平面圖（A)、剖視圖 第5圖係說明先前之電路裝置的平面圖（A)、剖視圖 (B) 〇 U、31、101 引線 第1引線 第2引線 島部 【主要元件符號說明】 1() ' 30、10Q電路裝置
IIA、 liAl、31A
IIB、 11B1、31B IIC、 31C第3引線 12A 第1島部 13、104半導體元件 13B 第2半導體元件 15A至15E金屬細線 17、45 階梯部 19 懸吊引線 21 平坦部 45A 第1階梯部 46 焊接材料 A、B 區域 12B 第2島部 13A 第1半導體元件 15、 1 〇 5金屬細線 16、 103密封樹脂 18 連結部 20 傾斜部 44 晶片元件 45B 第2階梯部 102 焊盤
El、E2 電極 315984 18

Claims (1)

  1. _ 第931 18742號專利申請案 申請專利範圍修正本 (95年〇1月〇5曰 1· 一種電路裝置，其特徵在於包含： 複數個半導體元件； 、第1引線，與上述半導體元件之搭接焊墊相連接並 v出至封裝體之外部，而構成外部端子，·以及 此相連接， 第2引線，在上述封裝體内部將上述半導體元件彼 而且上述第1引線及上述第2引線的端部係從上述 封裝體的側面露出。 2· —種電路裝置，其特徵在於包含： 第1半導體元件及第2半導體元件；
    地乐1及上述第2半導體元件，
    封裝菔的惻面蕗出。 如申睛專利範圍第2項之電路裝置 線係超越至少一 其中，上述金屬細
    接在上述第2引線。 315984(修正版) 1299966 (如申請專利範圍第2項之電路震置，其中，在與上述全 屬細線相連接部位之上述第2引線設置朝対突出 梯部。 5. 如申請專利範圍帛4項之電路裝置，其中，±述階梯部 ° ^自上述第2引線朝斜上方延伸之傾斜部、及自上 述傾斜部延伸之平坦部。 6. 如申請專利範圍帛！項之電路裝置，其中，上述第2引 線係與上述第i及上述第2半導體元件整齊排列之方向 平行延伸。 7. 如申請專利範圍第2項之電路裝置’其中’上述金屬細 $所連接部位之上述引線係形成比其他部位之寬度更 寬。 8·如申請專利範圍第丨項之電路裝置，其中，上述第2引 線之端部係自上述封裝體朝外部導出。 9·如申請專利範圍帛i項之電路裝置，其中，上述第2引 線之端部係收納在上述封裝體之内部。 10·—種電路裝置，其特徵在於包含： 第1引線； 第2引線，接近上述第丨引線之一方而延伸，並設 有朝上方突出之第1階梯部； 第3引線，接近上述第1引線之另一方而延伸，並 w又有朝上方突出之第2階梯部；以及 晶片元件，以跨越上述第1引線之方式，介由焊接 材料固接在上述第1階梯部及上述第2階梯部。 315984(修正版) 2 1299966 11. 如申請專利範圍第U)項之電路裝置，其中，上 及第2階梯部包含：自上述第2及上述第3弓丨線 方延伸之傾斜部、及自上述傾斜部延伸之平坦部。’ 12. 如申請專利範圍第1〇項之電路裝置，其中，上、成> 階梯部及上述第2¾匕梯部係形成比其他部位 的寬度更寬。 13. —種電路裝置，其特徵在於包含： 第1電路元件； 、第1引線，介由金屬細線與上述第丨電路元件 連接，而其端部導出至外部； 第2引線，介由金屬細線與上述第i引線 以及 &侵’ 電性連接在上述第2引線之第2電路元件。 ⑷如申請專利範圍第13項之電路裝置，其中，上述 細線係超越至少一個上述第1或上述第2引線之上方。 如申請專利範圍第13項之電路裳置，纟中，在上述全 屬細線所連接部位之上述第1或第2引線設置朝上方突 出之階梯部。 ，一〜不 A J丨球 上述傾斜部延伸之平坦部 ·:申請專利範圍第15項之電路裝置，其中，上述 部包含：自上述第2引線朝斜上方延伸之傾斜部、 >{由-巾一丄 〇 iVr7 置，其中，上述金屬 引線係形成比其他部 17·如申睛專利範圍第i3項之電路裝 細線所連接部位之上述第1或第2 位之寬度更寬。 315984(修正版) 3 1299966 \種電路裝置，係包含：島部；具有外部引線之第^ 、=設於上述島部之半導體元件者’該外部引線係介由 將八一端接近設於上述島部周圍之内部引線而使其另 一端自密封樹脂露出所構成，其特徵在於： 具有配線引線，該配線引線自上述密封樹脂所構成 之封裝體一侧邊的一區域延伸至上述封裝體之内部，並 自上述内部延伸至上述封裝體之一側邊的另一區域；W 介由上述配線引線，將上述半導體元件盥密封在上 述封裝體内且和上述半導體以林同之其他電路元件 進行電性連接。 19·如申請專利範圍第18項之電路裝置，其中，上述其他 電路元件係半導體元件或被動元件。 〃 20·如申請專利範圍第18項之電路裝置，其中，在上述島 部上設有經疊層而成之複數個半導體晶片。 21:種電路裝置，係包含··複數個島部；·具有外部引線之 第V引線及分別設於上述複數個島部之半導體元件者， 该外部引線係介由將其一端接近設於上述複數個島部 周圍之内部引線而使其另一端自密封樹脂露出 成，其特徵在於： 具有配線引線，该配線引線自上述密封樹脂所構成 之封裝體一側邊的一區域延伸至上述複數個島部之附 近，並自上述附近延伸至上述封裝體之一側邊的另一區 域； 介由上述配線引線，電性連接密封於上述封裝體内 之上述複數個半導體元件。 315984(修正版) 4 1299966 15D.- ΠΑ1 15A- γπ.π κι π In πι π π π π π η ίτι.π π S I_ QZ3φϋ Π~! U_I □=3dm 麵 ^ 1ύ Ίώ U L| U U/U U^U L! Li U U L' 11A 19 . ν\ \ \ \ \ 1 1 7/Π \ W
    區域Β<^Χ3 -15Β 區域A 15C # WW^ Φ 15E — uA 16 ΠΒΊ
    第1圖 1299966 (jif ot
    第2圖
TW93118742A 2003-08-20 2004-06-28 Circuit device TWI299966B (en)

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JP2008078445A (ja) 2006-09-22 2008-04-03 Yamaha Corp リードフレーム
JP2008147438A (ja) * 2006-12-11 2008-06-26 Nec Electronics Corp 半導体装置
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JP5543724B2 (ja) 2008-08-28 2014-07-09 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 樹脂封止型半導体装置及びその製造方法
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JP5257096B2 (ja) * 2009-01-23 2013-08-07 サンケン電気株式会社 半導体装置
JP2010258289A (ja) * 2009-04-27 2010-11-11 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2018107416A (ja) 2016-12-28 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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