TW200506553A - Photoresist stripping method and its device - Google Patents

Photoresist stripping method and its device

Info

Publication number
TW200506553A
TW200506553A TW093110588A TW93110588A TW200506553A TW 200506553 A TW200506553 A TW 200506553A TW 093110588 A TW093110588 A TW 093110588A TW 93110588 A TW93110588 A TW 93110588A TW 200506553 A TW200506553 A TW 200506553A
Authority
TW
Taiwan
Prior art keywords
photoresist
stripping method
photoresist stripping
treated
applying
Prior art date
Application number
TW093110588A
Other languages
English (en)
Chinese (zh)
Inventor
Kazutoshi Yamazaki
Yoshihiko Furuno
Yoji Fujimori
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of TW200506553A publication Critical patent/TW200506553A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW093110588A 2003-04-16 2004-04-16 Photoresist stripping method and its device TW200506553A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003111996 2003-04-16
JP2003111997 2003-04-16
JP2004024070 2004-01-30

Publications (1)

Publication Number Publication Date
TW200506553A true TW200506553A (en) 2005-02-16

Family

ID=33303692

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110588A TW200506553A (en) 2003-04-16 2004-04-16 Photoresist stripping method and its device

Country Status (4)

Country Link
JP (1) JP4373979B2 (ja)
KR (1) KR20060003346A (ja)
TW (1) TW200506553A (ja)
WO (1) WO2004093172A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173211A (ja) * 2004-12-13 2006-06-29 Sekisui Chem Co Ltd レジスト除去方法及びレジスト除去装置
JP4824395B2 (ja) * 2004-12-13 2011-11-30 積水化学工業株式会社 レジスト除去方法及びレジスト除去装置
JP4555729B2 (ja) * 2005-05-17 2010-10-06 積水化学工業株式会社 レジスト除去方法及びレジスト除去装置
KR100672752B1 (ko) * 2006-01-27 2007-01-22 주식회사 바맥스 포토레지스트 제거 방법 및 이를 수행하기 위한 장치
KR101771250B1 (ko) * 2006-05-30 2017-08-24 호야 가부시키가이샤 레지스트막 박리 방법, 마스크 블랭크의 제조 방법 및 전사마스크의 제조 방법
JP5006111B2 (ja) * 2007-06-12 2012-08-22 国立大学法人 筑波大学 フォトレジスト除去装置
JP5006112B2 (ja) * 2007-06-12 2012-08-22 国立大学法人 筑波大学 フォトレジスト除去方法
US11358172B2 (en) * 2015-09-24 2022-06-14 Suss Microtec Photomask Equipment Gmbh & Co. Kg Method for treating substrates with an aqueous liquid medium exposed to UV-radiation
KR20230175315A (ko) * 2018-07-13 2023-12-29 후지필름 가부시키가이샤 약액, 키트, 패턴 형성 방법, 약액의 제조 방법 및 약액 수용체

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239998B2 (ja) * 1998-08-28 2001-12-17 三菱マテリアルシリコン株式会社 半導体基板の洗浄方法
JP2000277473A (ja) * 1999-03-24 2000-10-06 Mitsubishi Materials Silicon Corp シリコンウエーハの洗浄方法
JP2001035827A (ja) * 1999-07-16 2001-02-09 Memc Kk 高濃度オゾン水、同オゾン水の調製方法、および同オゾン水を使用した洗浄方法
JP2001196348A (ja) * 2000-01-12 2001-07-19 Seiko Epson Corp 有機物の分解方法、および半導体素子の製造方法
JP2002100599A (ja) * 2000-09-21 2002-04-05 Mitsubishi Materials Silicon Corp シリコンウェーハの枚葉洗浄方法

Also Published As

Publication number Publication date
JPWO2004093172A1 (ja) 2006-07-06
KR20060003346A (ko) 2006-01-10
JP4373979B2 (ja) 2009-11-25
WO2004093172A1 (ja) 2004-10-28

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