TW200506553A - Photoresist stripping method and its device - Google Patents

Photoresist stripping method and its device

Info

Publication number
TW200506553A
TW200506553A TW093110588A TW93110588A TW200506553A TW 200506553 A TW200506553 A TW 200506553A TW 093110588 A TW093110588 A TW 093110588A TW 93110588 A TW93110588 A TW 93110588A TW 200506553 A TW200506553 A TW 200506553A
Authority
TW
Taiwan
Prior art keywords
photoresist
stripping method
photoresist stripping
treated
applying
Prior art date
Application number
TW093110588A
Other languages
Chinese (zh)
Inventor
Kazutoshi Yamazaki
Yoshihiko Furuno
Yoji Fujimori
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of TW200506553A publication Critical patent/TW200506553A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention provides a photoresist stripping method and device that enable photoresist on a substrate surface to be stripped with high efficiency. A method of stripping photoresist on a substrate surface includes at least a step (1) of applying an ozone solution to a surface to be treated and the step (2) of applying an organic solvent to the surface to be treated.
TW093110588A 2003-04-16 2004-04-16 Photoresist stripping method and its device TW200506553A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003111997 2003-04-16
JP2003111996 2003-04-16
JP2004024070 2004-01-30

Publications (1)

Publication Number Publication Date
TW200506553A true TW200506553A (en) 2005-02-16

Family

ID=33303692

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110588A TW200506553A (en) 2003-04-16 2004-04-16 Photoresist stripping method and its device

Country Status (4)

Country Link
JP (1) JP4373979B2 (en)
KR (1) KR20060003346A (en)
TW (1) TW200506553A (en)
WO (1) WO2004093172A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4824395B2 (en) * 2004-12-13 2011-11-30 積水化学工業株式会社 Resist removing method and resist removing apparatus
JP2006173211A (en) * 2004-12-13 2006-06-29 Sekisui Chem Co Ltd Method and device for removing resist
JP4555729B2 (en) * 2005-05-17 2010-10-06 積水化学工業株式会社 Resist removing method and resist removing apparatus
KR100672752B1 (en) * 2006-01-27 2007-01-22 주식회사 바맥스 Method of removing photoresist and apparatus for performing the same
KR101771250B1 (en) * 2006-05-30 2017-08-24 호야 가부시키가이샤 Resist film peeling method, mask blank manufacturing method and transfer mask manufacturing method
JP5006112B2 (en) * 2007-06-12 2012-08-22 国立大学法人 筑波大学 Photoresist removal method
JP5006111B2 (en) * 2007-06-12 2012-08-22 国立大学法人 筑波大学 Photoresist removal device
US11358172B2 (en) * 2015-09-24 2022-06-14 Suss Microtec Photomask Equipment Gmbh & Co. Kg Method for treating substrates with an aqueous liquid medium exposed to UV-radiation
JPWO2020013218A1 (en) * 2018-07-13 2021-08-02 富士フイルム株式会社 Chemical solution, kit, pattern formation method, chemical solution manufacturing method and chemical solution container

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239998B2 (en) * 1998-08-28 2001-12-17 三菱マテリアルシリコン株式会社 Semiconductor substrate cleaning method
JP2000277473A (en) * 1999-03-24 2000-10-06 Mitsubishi Materials Silicon Corp Cleaning method of silicon wafer
JP2001035827A (en) * 1999-07-16 2001-02-09 Memc Kk High concentration ozone water, preparation method thereof and cleaning method using the same
JP2001196348A (en) * 2000-01-12 2001-07-19 Seiko Epson Corp Method for decomposing organic matter and method of manufacturing semiconductor element
JP2002100599A (en) * 2000-09-21 2002-04-05 Mitsubishi Materials Silicon Corp Washing method for silicon wafer

Also Published As

Publication number Publication date
JP4373979B2 (en) 2009-11-25
WO2004093172A1 (en) 2004-10-28
JPWO2004093172A1 (en) 2006-07-06
KR20060003346A (en) 2006-01-10

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