TW200504888A - Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method - Google Patents
Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a methodInfo
- Publication number
- TW200504888A TW200504888A TW093102168A TW93102168A TW200504888A TW 200504888 A TW200504888 A TW 200504888A TW 093102168 A TW093102168 A TW 093102168A TW 93102168 A TW93102168 A TW 93102168A TW 200504888 A TW200504888 A TW 200504888A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- channel region
- conductor
- deposited
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 9
- 230000008021 deposition Effects 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/976—Temporary protective layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100213 | 2003-02-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200504888A true TW200504888A (en) | 2005-02-01 |
Family
ID=32842798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093102168A TW200504888A (en) | 2003-02-03 | 2004-01-30 | Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method |
Country Status (6)
Country | Link |
---|---|
US (1) | US7157337B2 (zh) |
EP (1) | EP1593155A1 (zh) |
JP (1) | JP2006518547A (zh) |
KR (1) | KR20050098879A (zh) |
TW (1) | TW200504888A (zh) |
WO (1) | WO2004070834A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6972224B2 (en) * | 2003-03-27 | 2005-12-06 | Freescale Semiconductor, Inc. | Method for fabricating dual-metal gate device |
JP4533155B2 (ja) * | 2005-01-12 | 2010-09-01 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US8178401B2 (en) | 2005-08-25 | 2012-05-15 | Freescale Semiconductor, Inc. | Method for fabricating dual-metal gate device |
US20090302389A1 (en) * | 2005-09-15 | 2009-12-10 | Nxp B.V. | Method of manufacturing semiconductor device with different metallic gates |
CN101263593A (zh) * | 2005-09-15 | 2008-09-10 | Nxp股份有限公司 | 制造具有不同金属栅极的半导体器件的方法 |
JP2007194592A (ja) * | 2005-12-20 | 2007-08-02 | Tdk Corp | 誘電体素子とその製造方法 |
US20070152276A1 (en) * | 2005-12-30 | 2007-07-05 | International Business Machines Corporation | High performance CMOS circuits, and methods for fabricating the same |
JP2009021550A (ja) * | 2007-07-12 | 2009-01-29 | Panasonic Corp | 半導体装置の製造方法 |
JP2009135419A (ja) * | 2007-10-31 | 2009-06-18 | Panasonic Corp | 半導体装置及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2790110B2 (ja) * | 1996-02-28 | 1998-08-27 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH11509987A (ja) * | 1996-03-06 | 1999-08-31 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Pic(パワー集積回路)装置の製造方法及びこの方法により製造したpic装置 |
US6693331B2 (en) * | 1999-11-18 | 2004-02-17 | Intel Corporation | Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation |
US6383879B1 (en) | 1999-12-03 | 2002-05-07 | Agere Systems Guardian Corp. | Semiconductor device having a metal gate with a work function compatible with a semiconductor device |
JP2001284466A (ja) * | 2000-03-29 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4056195B2 (ja) * | 2000-03-30 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP2002198441A (ja) * | 2000-11-16 | 2002-07-12 | Hynix Semiconductor Inc | 半導体素子のデュアル金属ゲート形成方法 |
JP2002198526A (ja) * | 2000-12-27 | 2002-07-12 | Fujitsu Ltd | 半導体装置の製造方法 |
KR100399356B1 (ko) | 2001-04-11 | 2003-09-26 | 삼성전자주식회사 | 듀얼 게이트를 가지는 씨모스형 반도체 장치 형성 방법 |
KR100426441B1 (ko) * | 2001-11-01 | 2004-04-14 | 주식회사 하이닉스반도체 | 반도체 소자의 시모스(cmos) 및 그의 제조 방법 |
-
2004
- 2004-01-16 JP JP2006502525A patent/JP2006518547A/ja active Pending
- 2004-01-16 WO PCT/IB2004/050030 patent/WO2004070834A1/en active Application Filing
- 2004-01-16 EP EP04702771A patent/EP1593155A1/en not_active Withdrawn
- 2004-01-16 US US10/544,412 patent/US7157337B2/en not_active Expired - Lifetime
- 2004-01-16 KR KR1020057014200A patent/KR20050098879A/ko not_active Application Discontinuation
- 2004-01-30 TW TW093102168A patent/TW200504888A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1593155A1 (en) | 2005-11-09 |
US7157337B2 (en) | 2007-01-02 |
JP2006518547A (ja) | 2006-08-10 |
WO2004070834A1 (en) | 2004-08-19 |
US20060138475A1 (en) | 2006-06-29 |
KR20050098879A (ko) | 2005-10-12 |
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