TW200503299A - Electric device comprising phase change material - Google Patents

Electric device comprising phase change material

Info

Publication number
TW200503299A
TW200503299A TW092135564A TW92135564A TW200503299A TW 200503299 A TW200503299 A TW 200503299A TW 092135564 A TW092135564 A TW 092135564A TW 92135564 A TW92135564 A TW 92135564A TW 200503299 A TW200503299 A TW 200503299A
Authority
TW
Taiwan
Prior art keywords
phase
change material
phase change
electric device
resistor
Prior art date
Application number
TW092135564A
Other languages
English (en)
Inventor
Martijn Henri Richard Lankhorst
Pieterson Liesbeth Van
Robertus Adrianus Maria Wolters
Erwin Rinaldo Meinders
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200503299A publication Critical patent/TW200503299A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Inorganic Insulating Materials (AREA)
  • Organic Insulating Materials (AREA)
TW092135564A 2002-12-19 2003-12-16 Electric device comprising phase change material TW200503299A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02080430 2002-12-19
EP03100583 2003-03-07

Publications (1)

Publication Number Publication Date
TW200503299A true TW200503299A (en) 2005-01-16

Family

ID=32683811

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092135564A TW200503299A (en) 2002-12-19 2003-12-16 Electric device comprising phase change material

Country Status (9)

Country Link
US (2) USRE48202E1 (zh)
EP (1) EP1576676B1 (zh)
JP (1) JP2006511971A (zh)
KR (1) KR20050092017A (zh)
AT (1) ATE387726T1 (zh)
AU (1) AU2003282323A1 (zh)
DE (1) DE60319424T2 (zh)
TW (1) TW200503299A (zh)
WO (1) WO2004057684A1 (zh)

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EP1766678A1 (en) 2004-06-30 2007-03-28 Koninklijke Philips Electronics N.V. Method for manufacturing an electric device with a layer of conductive material contacted by nanowire
US7700934B2 (en) 2004-09-27 2010-04-20 Koninklijke Philips Electronics N.V. Electric device with nanowires comprising a phase change material
JP2006245251A (ja) * 2005-03-03 2006-09-14 Mitsubishi Materials Corp 非晶質状態が安定な相変化記録膜およびこの相変化記録膜を形成するためのスパッタリングターゲット
US20070052009A1 (en) * 2005-09-07 2007-03-08 The Regents Of The University Of California Phase change memory device and method of making same
WO2007057972A1 (ja) * 2005-11-21 2007-05-24 Renesas Technology Corp. 半導体装置
KR20090007363A (ko) 2006-03-24 2009-01-16 엔엑스피 비 브이 상변화 저항기를 갖는 전기 디바이스 및 전기 장치
KR101177284B1 (ko) * 2007-01-18 2012-08-24 삼성전자주식회사 상변화 물질층과 그 제조방법과 이 방법으로 형성된 상변화물질층을 포함하는 상변화 메모리 소자와 그 제조 및 동작방법
CN101663771A (zh) 2007-04-20 2010-03-03 Nxp股份有限公司 电子器件和制造电子器件的方法
KR100857466B1 (ko) * 2007-05-16 2008-09-08 한국전자통신연구원 안티몬-아연 합금을 이용한 상변화형 비휘발성 메모리 소자및 이의 제조방법
CN100530739C (zh) * 2007-07-17 2009-08-19 中国科学院上海微系统与信息技术研究所 相变材料呈环形的相变存储器器件单元及制备方法
ATE527702T1 (de) 2008-01-16 2011-10-15 Nxp Bv Mehrschichtige struktur mit einer phasenwechselmaterialschicht und verfahren zu ihrer herstellung
US7906774B2 (en) 2008-02-01 2011-03-15 Industrial Technology Research Institute Phase change memory device
US20110012082A1 (en) * 2008-03-21 2011-01-20 Nxp B.V. Electronic component comprising a convertible structure
US20110108792A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Single Crystal Phase Change Material
US8129268B2 (en) 2009-11-16 2012-03-06 International Business Machines Corporation Self-aligned lower bottom electrode
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US8470635B2 (en) 2009-11-30 2013-06-25 Micron Technology, Inc. Keyhole-free sloped heater for phase change memory
US8017432B2 (en) * 2010-01-08 2011-09-13 International Business Machines Corporation Deposition of amorphous phase change material
CN103247757B (zh) * 2013-04-18 2015-11-18 宁波大学 一种用于相变存储器的Zn-Sb-Te相变存储薄膜材料及其制备方法
US9257643B2 (en) * 2013-08-16 2016-02-09 International Business Machines Corporation Phase change memory cell with improved phase change material
WO2015161257A1 (en) * 2014-04-18 2015-10-22 Northeastern Univeristy Piezoelectric mems resonator with integrated phase change material switches
WO2017066195A1 (en) 2015-10-13 2017-04-20 Northeastern University Piezoelectric cross-sectional lame mode transformer
DE102017210369A1 (de) 2017-06-21 2018-12-27 Lithium Energy and Power GmbH & Co. KG Batteriezelle
CN112331767B (zh) * 2020-10-27 2023-12-22 华中科技大学 一种Ge-Sb基相变材料及多级相变存储器

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WO2004057618A2 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Electric device comprising a layer of phase change material and method of manufacturing the same

Also Published As

Publication number Publication date
DE60319424D1 (de) 2008-04-10
ATE387726T1 (de) 2008-03-15
KR20050092017A (ko) 2005-09-16
USRE48202E1 (en) 2020-09-08
JP2006511971A (ja) 2006-04-06
AU2003282323A1 (en) 2004-07-14
US20060049389A1 (en) 2006-03-09
WO2004057684A1 (en) 2004-07-08
EP1576676B1 (en) 2008-02-27
EP1576676A1 (en) 2005-09-21
DE60319424T2 (de) 2009-02-19
US8779474B2 (en) 2014-07-15

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