200409256 玖、發明說明： 【發明所屬之技術領域】 本發明為關於以電氣連接基板或半導體元件等之 電極連接器。 【先前技術】 先前習知之半導體裝置為一體接合半導體元件和 異性導電薄膜之構造，在元件的外部電極之各銲墊上 合薄膜的導通路之端部，再藉由薄膜連接外部。又， 向異性導電薄膜為在由絕緣性樹脂所構成之薄膜基板 金屬導線互相絕緣之狀態下，且在厚度方向貫通該薄 板之狀態，設有複數個導通路之構造（例如，參照專 獻1 )。（專利文獻1日本專利特開2 0 0 0 - 2 8 6 2 9 3號公 第1頁，第1圖）。 【發明内容】 (發明所欲解決之問題） 先前習知之半導體裝置由於藉被設在絕緣性薄膜 的厚度方向之金屬性的導通路實施半導體裝置之銲墊 和外部的電氣連接，因此，各向異性導電薄膜的導通 銲墊或該導通路和外部之電氣的接合面積很小，半導 置的銲墊和外部會有導電不良之問題。又，即使不至 良，但半導體裝置的銲墊和導通路和外部之接觸電阻 大，而會有發生傳送信號劣化之問題。另一方面，在 體裝置和外部間加上負荷藉以增加半導體裝置的銲墊 通路及導通路和外部之接觸壓力雖然可提高此等間的 312/發明說明書(補件)/92_08/921M890 外部 各向 ，接 該各 中於 膜基 利文 報， 基板 (pad) 路和 體裝 於不 會變 半導 和導 導通 6 200409256 性，但在此情況下，因該負荷半導體裝置的外部電極之基 質層的層間絕緣膜會有發生破裂之問題。 本發明為了解決上述問題而所完成，其目的為在外部電 極間連接時外部電極之基質層較不會發生破裂，而可得到 良好的導電性之外部電極連接器。 (解決問題之手段） 本發明之外部電極連接器為具備有：第1金屬層；及， 被形成於該第1金屬層上同時被與該第1金屬層電氣連接 且導電體和彈性體交替或前述導電體被配列在前述彈性體 主面内部之第1緩衝層；及，被形成於該第1緩衝層上且 電氣連接該第1緩衝層之第2金屬層；前述彈性體的楊氏 模數（Young’s modulus)比前述第 1金屬層，及前述導電 體，及前述第2金屬層的楊氏模數均更小。 【實施方式】 (實施形態1 ) 圖1 ( a )表示本發明的實施形態1之外部電極連接器的 剖面圖，（b )為其I - I剖面圖。如該圖所示，外部電極連 接器1為由：順序重疊金等的第1金屬層2 a ;及，交替配 列金等的導電體3 a和聚醯亞胺或橡膠等的彈性體4 a之第 1緩衝層5 a ;及，金等的第2金屬層2 b ;如此所成之構造。 又，第1金屬層2a和導電體3a，及導電體3a和第2金屬 層2 b為形成導電狀態。又，彈性體4 a的楊氏模數為比第 1金屬層2a、及導電體3a，及第2金屬層2b的楊氏模數 更小0 7 312/發明說明書(補件)/92-08/92114890 200409256 圖2(a)為半導體元件之平面圖，（b)為其II-ΙΙ剖面 圖，及（c)為銲墊周邊部剖面之擴大圖。在半導體元件6 之主面為由半導體元件6的外部電極之鋁等所構成的銲墊 7被配列為棋盤格狀，除了銲墊外開口部8被包覆有表面 保護膜9。又，半導體元件6的剖面為如（b )或（c )所 示，在半導體基板1 0上形成有外部電極之基質層之層間絕 緣膜1 1，在該層間絕緣膜1 1上被形成有銲墊7之構造。 又，雖然未圖示，但銲墊7為電氣連接層間絕緣膜1 1上或 形成在其内部之内部金屬配線所聯繫的内部電路。 圖3 ( a )表示在半導體元件的銲墊上連接此一外部電極 連接器之狀態的圖，（b )表示在安裝基板上安裝連接該外 部電極連接器的半導體元件之狀態的圖，及（c )為在安裝 時的銲墊周邊部之擴大圖，在連接面上塗佈有導電性接著 材料（未圖示）之外部電極連接器1為，以接合器（b ο n d e r ) 被安裝於由鈦等所構成之可防止形成在銲墊7表面上的外 部電極連接器1之第1金屬層2 a的金等擴散至銲墊7之鋁 等的障礙金屬（barrier metal)13上。被安裝有該外部電 極連接器1之半導體元件6和安裝基板1 2為，在連接面被 疊合塗佈有導電性接著材料（未圖示）之外部電極連接器 1和在安裝基板1 2上形成安裝基板1 2的外部電極之基板 電極1 4的位置後，在圖上下方向藉以附加負荷而被連接。 又，圖4 ( a )表示使用該外部電極連接器連接半導體元 件彼此間之狀態，及（b )為在連接時的銲墊周邊部之擴大 圖，半導體元件6彼此也在連接面疊合塗佈有導電性接著 312/發明說明書(補件)/92-08/92114890 200409256 材料（未圖示）之外部電極連接器和連接有2個半導體元 件6的銲墊7之位置，並自圖上下方向藉加予負荷而被連 接。又，在雙方的半導體元件6之銲墊7表面上，對安裝 基板作安裝時亦以同樣理由而被形成障礙金屬1 3。 其次藉圖5及圖6說明外部電極連接器1之製造方法。 圖5 ( a )為在形成外部電極連接器1之前的銲墊周邊部之 圖，其僅表示銲墊7、表面保護膜9、層間絕緣膜1 1。在 銲墊7表面藉濺射而形成障礙金屬1 3 (圖5 ( b ))，其次， 在障礙金屬13的表面藉減：艘（sputtering)形成第1金屬層 2a之金的層（圖5(c))，其次，在第1金屬層2a的表面 藉自旋式塗覆（spin-coat)形成彈性體 4a之聚醯亞胺層 (圖5 ( d ))，其次，藉光微影技術而形成為了在彈性體4 a 形成導電體3 a的開口部1 5 (圖6 ( a ))，其次，藉電鍍在 開口部1 5充填導電體3 a之金（圖6 ( b ))，其次，藉濺鍍 形成第2金屬層2b之金的層（圖6(c))，其次，在光微 影技術後藉餘刻（e t c h i n g )除去不必要之第2金屬層2 b、 彈性體4a、第一金屬層2a、障礙金屬13(圖6(d))。在 此處，在圖 5(d)〜圖 6(b)的步驟所形成之層為第 1 緩衝層5 a。 又，在本實施形態雖然表示在半導體元件6上一體形成 外部電極連接器1之方法，但也可使外部電極連接器1取 代在半導體元件6的銲墊周邊部形成而使具有角柱狀凹部 的金屬模（m ο 1 d )作為基部以上述同樣的步驟製造各別零 件，在半導體元件6的障礙金屬1 3上使用導電性接著材料 9 312/發明說明書(補件)/92-08/92114890 200409256 (未圖示）而接合亦可。又，在本實施形態雖然第1金屬 層 2 a的材料為了防止對銲墊 7的擴散而形成有障礙金屬 1 3，但第1金屬層2 a的材料和銲墊7的材料在相同時或不 須要考慮材料擴散所發生之問題時則不需要有障礙金屬 1 3也可以。 其次，藉圖3說明該外部電極連接器1之效果。要對安 裝基板1 2上安裝裝有外部電極連接器1之半導體元件6 時，雖然在圖3 ( c )的上下方向會有很大的負荷，但因該 負荷彈性體4 a會在圖3 ( c )的左右方向變形將受到的負 荷之一部份分散到圖3 ( c )的左右方向。因此，可減輕銲 墊7及層間絕緣膜1 1所受到的負荷，而使層間絕緣膜1 1 變得難以破裂。又，由於外部電極連接器1接合銲墊7或 基板電極 14之接合面全體為金屬製，因此，可使銲墊 7 和基板電極14安定的導通。又，圖4表示在連接半導體元 件6彼此間時亦可以同樣的原理得到相同的效果。又，在 本實施形態中，雖然說明由於作為外部電極之連接面的面 積很小，因此，使用難以取得導電性之外部電極之基質層 的層間絕緣膜容易損壞之半導體元件的銲墊，或安裝基板 的基板電極之外部電極連接器的效果，但本發明之外部電 極連接器的適用範圍並不限定於此，其也可使用於液晶 板、撓性基板等一般具有外部電極之電氣的連接零件。 又，在實施形態1之第1緩衝層5 a，雖然導電體3 a和 彈性體4a交替配列，但如圖7所示，也可在彈性體4a主 面内部使圓柱狀之導電體3a配列為棋盤格狀。 10 312/發明說明書(補件)/92-08/92114890 200409256 又，第1金屬層2a、導電體3a、彈性體4a其雖各自為 由單一的材料所構成，但也可由合金或聚醯亞胺和橡膠的 混合體等複數的材料所構成。又，第1金屬層2 a、導電體 3 a、及第2金屬層2 b雖為由同一的材料所構成，但也可由 其他的材料所構成。 (實施形態2 ) s 圖8 ( a )表示本發明之實施形態2的外部電極連接器和 銲墊周邊部之剖面圖，及（b )為外部電極連接器之I V - I V 剖面圖和V - V剖面圖。又，在和圖1至圖7所示之實施形 態1相同或相當的部分為附加同一符號而省略其說明。如 該圖所示，實施形態2之外部電極連接器1之構造為，在 第2金屬層2b上具備有第2緩衝層5b，在第2緩衝層5b 上具備有第3金屬層2c，在該第2緩衝層5b的主面之垂 直方向中，在第2緩衝層5b的導電體3b和第1緩衝層5a 之導電體3a在互相不會重疊的位置，配置有導電體3b和 導電體3 a。在連接半導體元件彼此間時或在安裝基板上安 裝半導體元件時的負荷假如加至第2緩衝層 5 b的導電體 3b時，其負荷主要會加至導電體3b之正下面，但在本實 施形態中由於導電體3 b的正下面必定置有第1緩衝層5 a 的彈性體4 a，因此，更容易使負荷分散。 又，實施形態2的第1緩衝層5 a和第2缓衝層5 b，雖 然交替配列有導電體 3 a、3 b和彈性體 4 a、4 b，但如圖 9 所示，也可在彈性體4a、4b主面内部使導電體3a、3b配 列為棋盤格狀。又，實施形態2的外部電極連接器1，以 11 312/發明說明書(補件)/92-08/92114890 200409256 和圖5、圖6所示的實施形態1之外部電極連接器1相同 的步驟形成第2金屬層2 b後，再將形成導電性3 b之位置 在第2缓衝層5b的主面之垂直方向中變更為不會重疊導電 體3a之位置，而藉反覆圖5(d)〜圖6(d)的步驟以製 造 ° (實施形態3 ) 圖10(a)表示本發明的實施形態3之半導體元件的銲 墊周邊部之剖面圖，（b)為該銲墊之擴大圖，及（c)為其 V I I I - V I I I剖面圖。又，在和圖1至圖7表示之實施形態1 相同或相當之部份為附加同一符號而省略其說明。實施形 態3的外部電極連接器為構成銲墊1 0 7之連接器，第1金 屬層2 a被連接半導體元件6的外部電極基質層之層間絕緣 膜1 1及形成在由鋁等所構成的内部金屬配線1 6上之鈦等 的障礙金屬13，第2金屬層2b的表面變成銲墊面17。 圖 11(a)表示在安裝基板上安裝具備有本發明的實施 形態3之銲墊1 0 7的半導體元件之狀態的圖，及（b )表示 在連接該半導體元件彼此間之狀態的圖。如圖 11 ( a )所 示，具備有該銲墊1 〇 7之半導體元件6為，在銲墊1 0 7和 基板電極 1 4之間夾住在連接面上塗佈有導電性接著材料 (未圖示）之焊料1 8，自圖的上下方向藉施加負荷壓著安 裝於安裝基板1 2上。又，如圖1 1 ( b )所示，半導體元件 的銲墊1 0 7彼此間為，在銲墊1 0 7間夾住連接面上塗佈有 導電性接著材料（未圖示）之焊料1 8，自圖的上下方向藉 施加負何而被接合。 12 312/發明說明書(補件)/92-08/92114890 200409256 該實施形態3的半導體元件6之銲墊1 0 7，由於銲墊1 0 7 本身被構成含有彈性體4 a，因此，在連接半導體元件6的 銲墊 1 0 7彼此間或對安裝基板 1 2上要安裝半導體元件 6 時藉銲墊1 0 7受到的負荷彈性體4 a使其變形而和銲墊面分 散至水平方向，因此可減輕層間絕緣膜1 1受到損傷。又， 層間絕緣膜1 1的損傷，雖然在晶圓試驗中對探針之探測針 (未圖示）的銲墊面1 7接觸時也會發生，但此實施形態3 之半導體元件6的銲墊107，由於構成銲墊107本身可分 散負荷，因此，在晶圓試驗中也可減輕層間絕緣膜1 1的損 傷。進一步，該實施形態3的銲墊1 0 7，因為接連内部金 屬配線 1 6之面和接連焊料 1 8 或探測針之面雙方均為金 屬，因此，在内部金屬配線1 6和焊料1 8之間，及内部金 屬配線1 6和探測針之間可成為安定之導通狀態。又，上述 銲墊構造為使用既存之半導體元件製造設備，其可和圖 5 及圖6所記載之外部電極連接器的製造步驟以同樣的步驟 製造。 又，此實施形態3之半導體元件6，雖然在内部金屬配 線1 6和第1金屬層2 a間形成有障礙金屬，但内部金屬配 線1 6和第1金屬層2是同一材料時或在其等間的材料不會 有擴散之問題時則不須要有障礙金屬1 3。另一方面，在第 1金屬層2 a和導電體3 a間會發生材料擴散之問題時或在 導電體3 a和第2金屬層2 b間發生材料擴散之問題時，假 如各自在第1金屬層2 a和第1緩衝層5 a間或在第1緩衝 層5 a和第2金屬層2 b間形成有障礙金屬1 3時則可防止該 13 312/發明說明書(補件)/92-08/92114890 200409256 等間之材料擴散。 又，實施形態 3的半導體元件 6由於内部金屬配線1 6 被形成在層間絕緣膜1 1内部，因此，雖然銲墊1 0 7構成位 於層間絕緣膜1 1和内部金屬配線1 6的兩方上部，但如圖 1 2所示，在層間絕緣膜1 1上要形成内部金屬配線1 6時， 會變成銲墊1 0 7被形成在層間絕緣膜1 1上，内部金屬配線 1 6被連接在第1金屬層2 a的側面上之構造。 又，在圖8、圖9表示和實施形態2的外部電極連接器 同樣，在第2金屬層2b上形成第2緩衝層5b，在第2緩 衝層5b上形成第3金屬2c，在該第2緩衝層5b之主面的 垂直方向中，在第2缓衝層5b的導電體3b和第1缓衝層 5 a的導電體3 a互相不會重疊之位置上，假如構成配置有 導電體3 b和導電體3 a，則在安裝時對層間絕緣膜1 1可更 減輕其損傷性。又，實施形態3之銲墊1 0 7，雖然導電體 3 a和彈性體4 a交替配列，但和圖7表示的實施形態1之 外部電極連接器同樣，也可在彈性體4a的主面内部使圓柱 狀之導電體3 a配列為棋盤格狀。進一步，第1金屬層2 a、 導電體3 a、彈性體4 a為各自由單一之材料所構成，但也 可由合金或聚醯亞胺和橡膠的混合體之複數種材料所構 成。又，即使第1金屬層2a、導電體3a及第2金屬層2b 為由同一材料所構成，但也可由其他的材料所構成。又， 在本實施形態中，由於連接外部電極連接器之連接部的面 積很小，因此難以得到導電性，其雖然可適用於外部電極 基質層之層間絕緣膜1 1容易損壞之半導體元件的銲墊，但 14 312/發明說明書(補件)/92-08/92114890 200409256 也可將此外部電極連接器適用在安裝基板的基板電極或液 晶之銲墊上。 (發明之效果） 如以上所說明，本發明之外部電極連接器為具備有：第 1金屬層；及，導電體和彈性體交替或導電體被配列在彈 性體主面内部之第1緩衝層；及，第2金屬層；由於彈性 體的楊氏模數比第1金屬層及導電體及第2金屬層的楊氏 模數更小，因此，難以發生連接外部電極間時所產生之外 部電極之基質層的破裂。又，其可安定地導通外部電極間。 【圖式之簡單說明】 圖1 ( a )表示在本發明的實施形態1中外部電極連接器 的剖面圖，圖1(b)為其I - I剖面圖。 圖2(a)為半導體元件之平面圖，圖2(b)為其II-II 剖面圖，圖2 ( c )為銲墊周邊部剖面之擴大圖。 圖3 ( a )表示在本發明的實施形態1中，在半導體元件 連接外部電極連接器之狀態的圖，圖3 ( b )表示在安裝基 板上連接外部電極連接器的半導體元件後之狀態的圖，圖 3 ( c )為安裝時之銲墊周邊部的擴大圖。 圖4 ( a )表示在本發明的實施形態1中，藉外部電極連 接器連接半導體元件彼此間之狀態的圖，圖4 ( b )為在安 裝時之銲墊周邊部的擴大圖。 圖5 ( a )〜（d )表示在本發明的實施形態1中之外部電極 連接器的製造步驟圖。 圖6 ( a )〜（d )表示在本發明的實施形態1中之外部電極 15 312/發明說明書(補件)/92-08/92114890 200409256 連接器的製造步驟圖。 圖7 ( a )表示在本發明的實施形態1中之 極連接器之剖面圖，圖7 ( b )為其I I I - I I I 圖8 ( a )表示在本發明的實施形態2中之 器和銲墊周邊部的剖面圖，圖8 ( b )為該外 之I V - I V剖面圖和V - V剖面圖。 圖9 ( a )表示在本發明的實施形態2中之 極連接器和銲墊周邊部的剖面圖，圖9 ( b ) 連接器之V I - V I剖面圖和V I I - V I I剖面圖。 圖1 0 ( a )表示在本發明的實施形態3中之 銲墊周邊部之剖面圖，圖 1 0 ( b )為該銲墊 10(c)為其VIII-VIII剖面圖。 圖1 1 ( a )表示在本發明的實施形態3中 上安裝具備有銲墊的半導體元件之狀態的圖 為表示在連接該半導體元件彼此間之狀態的 圖1 2表示在本發明的實施形態3中之其 件之銲塾周邊部的剖面圖。 (元件符號說明） 1 外部電極連接器 2a 第1金屬層 2b 第2金屬層 2 c 第3金屬層 3a 、 3b 導電體 4a、4b 彈性體 312/發明說明書(補件)/92-08/92114890 其他的外部電 剖面圖。 外部電極連接 部電極連接器 其他的外部電 為該外部電極 半導體元件的 之擴大圖，圖 ’在安裝基板 ，圖 1 1 ( b ) 圖。 他的半導體元 16 200409256 5a 第 1 緩 衝 層 5b 第 2 緩 衝 層 6 半 導 體 元 件 7^107 銲 墊 8 銲 墊 開 V 9 表 面 保 護 膜 10 半 導 體 基 板 11 層 間 絕 緣 膜 12 安 裝 基 板 13 障 礙 金 屬 14 基 板 電 極 15 開 口 部 16 内 部 金 屬 配線 17 銲 墊 面 18 焊 料 17 312/發明說明書(補件)/92-08/92114890200409256 2. Description of the invention: [Technical field to which the invention belongs] The present invention relates to an electrode connector for electrically connecting a substrate or a semiconductor element. [Prior art] A conventionally known semiconductor device has a structure in which a semiconductor element and an anisotropic conductive film are integrally bonded, and the ends of the conductive paths of the film are bonded to the pads of the external electrodes of the element, and then connected to the outside through the film. The anisotropic conductive film has a structure in which a plurality of conductive paths are provided in a state where metal wires of a thin film substrate made of an insulating resin are insulated from each other, and the thin plate is penetrated in the thickness direction (for example, refer to Special Publication 1). ). (Patent Document 1 Japanese Patent Laid-Open No. 2000- 2 8 6 2 9 No. 3, page 1, figure 1). [Summary of the Invention] (Problems to be Solved by the Invention) Since conventionally known semiconductor devices implement electrical connection between the pads of the semiconductor device and the outside by a metallic conductive path provided in the thickness direction of the insulating film, the semiconductor devices are oriented in all directions. The conductive pads of the anisotropic conductive film or the electrical connection area between the conductive path and the outside are small, and the semi-conductive pads and the outside may have a problem of poor conductivity. In addition, even if it is not good, the contact resistance between the pads and the conductive path of the semiconductor device and the outside is large, and there is a problem that the transmission signal is deteriorated. On the other hand, by applying a load between the body device and the outside to increase the contact pressure between the pad path and the conductive path of the semiconductor device and the outside, the 312 / Invention Specification (Supplement) / 92_08 / 921M890 external parts can be increased. Directly connected to the base film, the substrate (pad) and the body are not changed semiconducting and conducting 6 200409256, but in this case, because of the substrate layer of the external electrode of the load semiconductor device The interlayer insulating film has a problem of cracking. The present invention has been made in order to solve the above-mentioned problems, and an object thereof is to prevent the matrix layer of the external electrode from being cracked when the external electrodes are connected, and to obtain an external electrode connector with good conductivity. (Means for Solving the Problem) The external electrode connector of the present invention includes: a first metal layer; and formed on the first metal layer while being electrically connected to the first metal layer while the conductor and the elastomer alternate Or the first buffer layer arranged inside the main surface of the elastomer; and the second metal layer formed on the first buffer layer and electrically connected to the first buffer layer; the Young's of the elastomer The Young's modulus is smaller than the Young's modulus of the first metal layer, the conductor, and the second metal layer. [Embodiment 1] (Embodiment 1) FIG. 1 (a) is a cross-sectional view of an external electrode connector according to Embodiment 1 of the present invention, and (b) is a cross-sectional view taken along the line I-I. As shown in the figure, the external electrode connector 1 is composed of: a first metal layer 2 a in which gold and the like are sequentially stacked; and a conductive body 3 a in which gold and the like are alternately arranged and an elastomer 4 a such as polyimide or rubber. The first buffer layer 5 a; and the second metal layer 2 b of gold, etc .; The first metal layer 2a and the conductor 3a, and the conductor 3a and the second metal layer 2b are in a conductive state. The Young's modulus of the elastic body 4a is smaller than the Young's modulus of the first metal layer 2a, the conductor 3a, and the second metal layer 2b. 0 7 312 / Invention Specification (Supplement) / 92- 08/92114890 200409256 Figure 2 (a) is a plan view of a semiconductor device, (b) is a cross-sectional view of II-II, and (c) is an enlarged view of a cross-section of a peripheral portion of a pad. On the main surface of the semiconductor element 6, pads 7 made of aluminum or the like, which are external electrodes of the semiconductor element 6, are arranged in a checkerboard pattern, and the openings 8 except for the pads are covered with a surface protection film 9. The cross section of the semiconductor element 6 is as shown in (b) or (c). An interlayer insulating film 11 having a matrix layer of external electrodes is formed on the semiconductor substrate 10, and an interlayer insulating film 11 is formed on the interlayer insulating film 11 Structure of the bonding pad 7. Although not shown, the pads 7 are internal circuits connected to the interlayer insulating film 11 which is electrically connected or formed by internal metal wirings. FIG. 3 (a) is a diagram showing a state where this external electrode connector is connected to a pad of a semiconductor element, (b) is a diagram showing a state where a semiconductor element connected to the external electrode connector is mounted on a mounting substrate, and (c ) Is an enlarged view of the periphery of the pad during installation. The external electrode connector 1 coated with a conductive adhesive material (not shown) on the connection surface is a connector (b ο nder) mounted on Titanium or the like prevents gold or the like formed on the first metal layer 2 a of the external electrode connector 1 on the surface of the pad 7 from diffusing to the barrier metal 13 such as aluminum of the pad 7. The semiconductor element 6 and the mounting substrate 12 on which the external electrode connector 1 is mounted are the external electrode connector 1 and the mounting substrate 1 2 on which a conductive adhesive material (not shown) is coated on the connection surface. After the positions of the substrate electrodes 14 on which the external electrodes of the mounting substrate 12 are formed, the substrate electrodes 14 are connected with an additional load in the vertical direction of the figure. 4 (a) shows a state where semiconductor elements are connected to each other using the external electrode connector, and (b) is an enlarged view of a peripheral portion of a pad during connection, and semiconductor elements 6 are also superimposed and coated on a connection surface. Conductive conductive 312 / Invention Specification (Supplement) / 92-08 / 92114890 200409256 The position of the external electrode connector of the material (not shown) and the pads 7 to which the two semiconductor elements 6 are connected. The directions are connected by applying a load. In addition, barrier metals 13 are formed on the surfaces of the pads 7 of the semiconductor elements 6 on both sides for mounting substrates for the same reason. Next, a manufacturing method of the external electrode connector 1 will be described with reference to FIGS. 5 and 6. Fig. 5 (a) is a diagram of a peripheral portion of a bonding pad before the external electrode connector 1 is formed, showing only the bonding pad 7, the surface protection film 9, and the interlayer insulating film 11. Barrier metal 1 3 is formed on the surface of pad 7 by sputtering (FIG. 5 (b)), and secondly, on the surface of barrier metal 13, a layer of gold is formed by sputtering the first metal layer 2 a (FIG. 5). (c)), secondly, a spin-coat is used to form a polyimide layer of the elastomer 4a on the surface of the first metal layer 2a (FIG. 5 (d)), and secondly, by photolithography Technology to form the openings 15 (Fig. 6 (a)) of the conductive body 3a in the elastic body 4a, and then fill the openings 15 with the gold of the conductive body 3a by electroplating (Fig. 6 (b)) Secondly, a gold layer of the second metal layer 2b is formed by sputtering (FIG. 6 (c)). Secondly, unnecessary photoetching is used to remove the second metal layer 2 b after the photolithography technology. B. Elasticity The body 4a, the first metal layer 2a, and the barrier metal 13 (FIG. 6 (d)). Here, the layer formed in the steps of FIGS. 5 (d) to 6 (b) is the first buffer layer 5a. Although the present embodiment shows a method of integrally forming the external electrode connector 1 on the semiconductor element 6, the external electrode connector 1 may be formed instead of a peripheral portion of the pad of the semiconductor element 6 to have a corner pillar-shaped recess. The metal mold (m ο 1 d) is used as a base to manufacture respective parts in the same steps as described above. A conductive adhesive material 9 is used for the barrier metal 1 3 of the semiconductor element 6 312 / Invention Specification (Supplement) / 92-08 / 92114890 200409256 (not shown). Moreover, in this embodiment, although the material of the first metal layer 2 a is formed with a barrier metal 13 to prevent diffusion to the bonding pad 7, the material of the first metal layer 2 a and the material of the bonding pad 7 are the same or When it is not necessary to consider the problem of material diffusion, it is not necessary to have the barrier metal 1 3. Next, the effect of the external electrode connector 1 will be described with reference to FIG. 3. When the semiconductor element 6 with the external electrode connector 1 is mounted on the mounting substrate 12, although there is a large load in the up-down direction of FIG. 3 (c), the elastic body 4 a will cause a load in FIG. 3 due to the load. (c) Deformation in the left-right direction distributes part of the load to the left-right direction in FIG. 3 (c). Therefore, the load on the pads 7 and the interlayer insulating film 11 can be reduced, and the interlayer insulating film 11 can be hardly broken. In addition, since the entire bonding surface of the external electrode connector 1 to the bonding pad 7 or the substrate electrode 14 is made of metal, the bonding pad 7 and the substrate electrode 14 can be conducted in a stable manner. FIG. 4 shows that the same effect can be obtained by connecting the semiconductor elements 6 to each other with the same principle. In addition, in this embodiment, it is explained that since the area of the connection surface of the external electrode is small, a pad of a semiconductor device that uses an interlayer insulating film of a matrix layer of an external electrode that is difficult to obtain conductivity is easily damaged, or is mounted. The effect of the external electrode connector of the substrate electrode of the substrate, but the scope of application of the external electrode connector of the present invention is not limited to this, and it can also be used for electrical connection parts that generally have external electrodes, such as liquid crystal panels and flexible substrates. . In the first buffer layer 5a of the first embodiment, although the conductors 3a and the elastomers 4a are alternately arranged, as shown in FIG. 7, a columnar conductor 3a may be arranged inside the main surface of the elastomer 4a. Checkered. 10 312 / Invention Specification (Supplement) / 92-08 / 92114890 200409256 In addition, although the first metal layer 2a, the conductor 3a, and the elastomer 4a are each composed of a single material, they may also be made of an alloy or polyurethane. Multiple materials such as a mixture of amine and rubber. The first metal layer 2a, the conductor 3a, and the second metal layer 2b are made of the same material, but they may be made of other materials. (Embodiment 2) s Fig. 8 (a) is a cross-sectional view showing an external electrode connector and a pad peripheral portion according to a second embodiment of the present invention, and (b) is an IV-IV cross-sectional view and V- V sectional view. In addition, the same or corresponding parts as those in Embodiment 1 shown in Figs. 1 to 7 are denoted by the same reference numerals, and descriptions thereof will be omitted. As shown in the figure, the external electrode connector 1 according to the second embodiment has a structure in which a second buffer layer 5b is provided on the second metal layer 2b, and a third metal layer 2c is provided on the second buffer layer 5b. In the vertical direction of the main surface of the second buffer layer 5b, the conductor 3b and the conductor are disposed at positions where the conductor 3b of the second buffer layer 5b and the conductor 3a of the first buffer layer 5a do not overlap each other. 3 a. When the semiconductor element is connected to each other or the semiconductor element is mounted on a mounting substrate, if the load is applied to the conductor 3b of the second buffer layer 5b, the load is mainly applied directly below the conductor 3b, but in this implementation In the form, since the elastic body 4 a of the first buffer layer 5 a is inevitably disposed directly below the conductor 3 b, it is easier to distribute the load. The first buffer layer 5 a and the second buffer layer 5 b of the second embodiment are alternately arranged with the conductors 3 a and 3 b and the elastomers 4 a and 4 b, but as shown in FIG. 9, The conductors 3a, 3b are arranged in a checkerboard shape inside the main surfaces of the elastic bodies 4a, 4b. The external electrode connector 1 according to the second embodiment has the same steps as 11 312 / Invention Specification (Supplement) / 92-08 / 92114890 200409256 and the external electrode connector 1 according to the first embodiment shown in FIGS. 5 and 6. After the second metal layer 2 b is formed, the position where the conductive 3 b is formed is changed to a position where the conductive body 3 a does not overlap in the vertical direction of the main surface of the second buffer layer 5 b. By repeating FIG. 5 (d ) To FIG. 6 (d) to manufacture ° (Embodiment 3) FIG. 10 (a) is a cross-sectional view of a peripheral portion of a pad of a semiconductor device according to Embodiment 3 of the present invention, and (b) is an enlarged view of the pad. Figures and (c) are cross-sectional views taken from VIII to VIII. In addition, the same or corresponding parts as those in the first embodiment shown in Figs. 1 to 7 are denoted by the same reference numerals, and descriptions thereof will be omitted. The external electrode connector according to the third embodiment is a connector constituting a solder pad 107. The first metal layer 2a is connected to the interlayer insulating film 11 of the external electrode matrix layer of the semiconductor element 6 and is formed of aluminum or the like. The barrier metal 13 such as titanium on the internal metal wiring 16 and the surface of the second metal layer 2 b become the pad surface 17. Fig. 11 (a) is a diagram showing a state in which a semiconductor element provided with a pad 107 of the third embodiment of the present invention is mounted on a mounting substrate, and (b) is a diagram showing a state in which the semiconductor elements are connected to each other. As shown in FIG. 11 (a), the semiconductor element 6 provided with the solder pad 107 is coated with a conductive adhesive material between a solder pad 107 and a substrate electrode 14 ( The solder 18 (not shown) is mounted on the mounting substrate 12 under pressure by applying a load from the vertical direction in the figure. As shown in FIG. 11 (b), the pads 107 of the semiconductor element are solders coated with a conductive adhesive material (not shown) between the pads 107 and the connection surface. 18, from the up and down direction of the figure, they are joined by applying a load. 12 312 / Invention specification (Supplement) / 92-08 / 92114890 200409256 The pad 1 0 7 of the semiconductor element 6 according to the third embodiment is constituted by the pad 1 0 7 containing an elastomer 4 a. The pads 10 7 of the semiconductor element 6 are mutually or on the mounting substrate 12 when the semiconductor element 6 is to be mounted. The elastic body 4 a is deformed by the load received by the pad 1 7 to disperse the pad surface to the horizontal direction. Therefore, damage to the interlayer insulating film 11 can be reduced. In addition, the damage of the interlayer insulating film 11 may occur when the pad surface 17 of the probe pin (not shown) is contacted in a wafer test, but the soldering of the semiconductor element 6 in the third embodiment is performed. Since the pad 107 constitutes the bonding pad 107 itself to distribute the load, the damage of the interlayer insulating film 11 can also be reduced in the wafer test. Furthermore, since both the surface of the internal metal wiring 16 and the surface of the continuous solder 18 or the probe pin are metal in the solder pad 10 of the third embodiment, the internal metal wiring 16 and the solder 18 Between the internal metal wiring 16 and the probe pin. The pad is constructed using existing semiconductor device manufacturing equipment, and can be manufactured in the same steps as the manufacturing steps of the external electrode connector shown in Figs. 5 and 6. In the semiconductor device 6 according to the third embodiment, although a barrier metal is formed between the internal metal wiring 16 and the first metal layer 2a, the internal metal wiring 16 and the first metal layer 2 are made of the same material or at the same time. Obstacle metals are not required when the materials in the interval do not have the problem of diffusion. On the other hand, when the problem of material diffusion occurs between the first metal layer 2 a and the conductive body 3 a or when the problem of material diffusion occurs between the conductive body 3 a and the second metal layer 2 b, When a barrier metal 1 3 is formed between the metal layer 2 a and the first buffer layer 5 a or between the first buffer layer 5 a and the second metal layer 2 b, this can be prevented. 13 312 / Description of the Invention (Supplement) / 92 -08/92114890 200409256 Diffusion of materials between classes. In the semiconductor element 6 according to the third embodiment, since the internal metal wiring 16 is formed inside the interlayer insulating film 11, the pads 10 and 7 are located on both upper portions of the interlayer insulating film 11 and the internal metal wiring 16. However, as shown in FIG. 12, when the internal metal wiring 16 is to be formed on the interlayer insulating film 11, it will become a bonding pad 10 7 formed on the interlayer insulating film 11, and the internal metal wiring 16 is connected to Structure on the side of the first metal layer 2a. 8 and FIG. 9 show that the second buffer layer 5b is formed on the second metal layer 2b and the third metal 2c is formed on the second buffer layer 5b in the same manner as the external electrode connector of the second embodiment. In the vertical direction of the main surface of the 2 buffer layer 5b, the conductive body 3b of the second buffer layer 5b and the conductive body 3a of the first buffer layer 5a do not overlap each other. 3 b and the conductor 3 a, the damage to the interlayer insulating film 1 1 can be further reduced during installation. In addition, although the pads 107 of the third embodiment are alternately arranged with the conductors 3a and the elastic bodies 4a, the pads 107 can be provided on the main surface of the elastic body 4a in the same manner as the external electrode connector of the first embodiment shown in FIG. Inside, the columnar conductors 3 a are arranged in a checkerboard shape. Further, the first metal layer 2a, the conductor 3a, and the elastomer 4a are each composed of a single material, but may be composed of a plurality of materials such as an alloy or a mixture of polyimide and rubber. Furthermore, even if the first metal layer 2a, the conductor 3a, and the second metal layer 2b are made of the same material, they may be made of other materials. In addition, in this embodiment, since the area of the connection portion to which the external electrode connector is connected is small, it is difficult to obtain conductivity. Although it can be applied to the soldering of semiconductor devices that are easily damaged by the interlayer insulating film 11 of the external electrode matrix layer Pad, but 14 312 / Invention Specification (Supplement) / 92-08 / 92114890 200409256 This external electrode connector can also be applied to the substrate electrode of the mounting substrate or the solder pad of the liquid crystal. (Effects of the Invention) As described above, the external electrode connector of the present invention includes: a first metal layer; and a first buffer layer in which the conductor and the elastomer are alternately or the conductor is arranged inside the main surface of the elastomer. ; And the second metal layer; since the Young's modulus of the elastomer is smaller than the Young's modulus of the first metal layer, the conductor, and the second metal layer, it is difficult to generate an external generated when connecting between external electrodes Rupture of the matrix layer of the electrode. In addition, it can stably conduct between the external electrodes. [Brief description of the drawings] Fig. 1 (a) is a cross-sectional view of an external electrode connector according to a first embodiment of the present invention, and Fig. 1 (b) is a cross-sectional view taken along the line I-I. FIG. 2 (a) is a plan view of a semiconductor device, FIG. 2 (b) is a cross-sectional view taken along line II-II, and FIG. 2 (c) is an enlarged view of a cross-section of a peripheral portion of a bonding pad. FIG. 3 (a) shows a state where a semiconductor element is connected to an external electrode connector in Embodiment 1 of the present invention, and FIG. 3 (b) shows a state after the semiconductor element of the external electrode connector is connected to a mounting substrate. Figure, Figure 3 (c) is an enlarged view of the periphery of the pad during mounting. Fig. 4 (a) is a diagram showing a state in which semiconductor elements are connected to each other by an external electrode connector in the first embodiment of the present invention, and Fig. 4 (b) is an enlarged view of a peripheral portion of a pad during mounting. 5 (a) to (d) are diagrams showing manufacturing steps of the external electrode connector according to the first embodiment of the present invention. FIGS. 6 (a) to (d) show manufacturing steps of the external electrode 15 312 / Invention Specification (Supplement) / 92-08 / 92114890 200409256 in the first embodiment of the present invention. Fig. 7 (a) is a cross-sectional view of a pole connector in the first embodiment of the present invention, and Fig. 7 (b) is its III-III. Fig. 8 (a) shows the device and the solder in the second embodiment of the present invention. A sectional view of the peripheral portion of the pad, and FIG. 8 (b) is an IV-IV sectional view and a V-V sectional view of the outside. Fig. 9 (a) is a cross-sectional view of a pole connector and a peripheral portion of a pad in a second embodiment of the present invention, and Fig. 9 (b) is a cross-sectional view of the connector in a V I-V I and a cross-sectional view in a V I-V I I. Fig. 10 (a) is a cross-sectional view of a peripheral portion of a pad in Embodiment 3 of the present invention, and Fig. 10 (b) is a cross-sectional view of the pad 10 (c) thereof. FIG. 11 (a) shows a state where a semiconductor element provided with a pad is mounted on a third embodiment of the present invention. FIG. 12 shows a state where the semiconductor elements are connected to each other. FIG. 12 shows an embodiment of the present invention. 3 is a cross-sectional view of the peripheral portion of the welding pad. (Explanation of component symbols) 1 External electrode connector 2a 1st metal layer 2b 2nd metal layer 2c 3rd metal layer 3a, 3b Conductor 4a, 4b Elastomer 312 / Inventory (Supplement) / 92-08 / 92114890 Other external electrical profile views. External electrode connection Part electrode connector Other external power is an enlarged view of the external electrode semiconductor element, which is shown on the mounting substrate, and FIG. 1 (b). His semiconductor element 16 200409256 5a 1st buffer layer 5b 2nd buffer layer 6 semiconductor element 7 ^ 107 pad 8 pad open V 9 surface protection film 10 semiconductor substrate 11 interlayer insulation film 12 mounting substrate 13 barrier metal 14 substrate electrode 15 Opening 16 Internal metal wiring 17 Pad surface 18 Solder 17 312 / Invention manual (Supplement) / 92-08 / 92114890