TW201924505A - Through-electrode substrate and semiconductor device using through-electrode substrate - Google Patents

Abstract

This through-electrode substrate comprises: a substrate constituted by an inorganic material; first wiring disposed on the substrate; a through-hole disposed on the substrate at a position apart from the first wiring; a through-electrode disposed on the inner wall of the through-hole; and second wiring connecting the first wiring and the through-electrode. According to the present disclosure, electrical continuity between the through-electrode and the wiring on the substrate is ensured in a high aspect ratio through-electrode substrate using a glass substrate, and a through-electrode substrate with improved electrical reliability and a method for producing the same can be provided.

Description

Through electrode substrate and semiconductor device using through electrode substrate

The present invention relates to a through electrode substrate. In particular, the present invention relates to a through electrode substrate having a crosslinked wiring that crosslinks a through electrode and a wiring on a substrate.

In recent years, with the miniaturization and high speed of electronic devices such as smart phones and notebook computers, the wiring boards that constitute semiconductor devices or semiconductor components that are used for electronic devices have been increasing in density and speed.

In the multilayer wiring board in which a plurality of wiring boards are laminated, a through electrode substrate on which a through electrode penetrating the wiring board is formed is used in order to connect the upper and lower wirings. In the case of forming such a through electrode, when the substrate is an organic substrate of an organic material, in order to form a wiring in the through hole, the wiring formed on the substrate can be obtained by performing electroless copper plating. The through electrode in the through hole is electrically connected.

Patent Document 1 discloses a printed wiring board having a via hole formed in a hole in which a bottom portion is formed in a substrate, and then a conductive layer is formed in a hole having a bottom portion, wherein the conductive layer is formed The substrate is a glass epoxy.
[Previous Technical Literature]
[Patent Literature]

Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-205070

[Problems to be solved by the invention]

However, when the substrate is a substrate made of an inorganic material such as glass, tantalum or ceramic, it is difficult to roughen the inner wall of the through hole, and in order to form the electroless copper, it is necessary to form an adhesion layer in advance. Further, when electroless copper is formed after forming the adhesion layer, copper plating is formed only in the portion where the adhesion layer is formed. In this case, when the wiring on the substrate and the through electrode in the through hole are connected by electroless copper plating, since the wiring and the through electrode are connected through the insulating adhesive layer, electrical reliability may be problematic.

In view of the above problems, an object of the present invention is to provide a through electrode substrate which is a through electrode substrate having a high aspect ratio of a substrate made of an inorganic material such as glass, and a method for manufacturing the same, which can ensure the penetration. The electrical conductivity is improved by the conduction of the electrodes to the wiring on the substrate.
[Means to solve the problem]

A through electrode substrate according to an embodiment of the present invention has:
a substrate composed of an inorganic material;
a first wiring provided on the substrate;
a through hole formed in the substrate at a position separated from the first wiring;
a through electrode provided on an inner wall of the through hole; and a second wire connecting the first wire and the through electrode.

The through electrode substrate according to the embodiment of the present invention may further include an adhesion layer provided between the substrate and the through electrode.

In the through electrode substrate according to the embodiment of the present invention, the second wiring may be further in contact with the adhesion layer.

In the through electrode substrate according to the embodiment of the present invention, the adhesion layer may contain an organic resin material.

The through electrode substrate according to the embodiment of the present invention may further include:
An insulating layer provided on the first wiring, the second wiring, and the through electrode;
a third wiring provided on the insulating layer; and a fourth wiring in contact with the insulating layer, the third wiring, and the through electrode.

In the through electrode substrate according to the embodiment of the present invention, the insulating layer may be made of an organic resin material, and the through electrode may be provided on an inner wall of the through hole and inside an opening of the insulating layer.

In the through electrode substrate according to the embodiment of the present invention, the through electrode may further include:
a first through electrode provided on an inner wall of the through hole; and a second through electrode provided inside the opening of the insulating layer.

In the through electrode substrate according to the embodiment of the present invention, the through hole may have an aspect ratio of 3 or more.
[Effects of the Invention]

According to the present invention, it is possible to provide a through electrode substrate which is a through electrode substrate using a high aspect ratio of a glass substrate, and which can ensure conduction between the through electrode and the wiring on the substrate, and improve electrical reliability. .

Hereinafter, each embodiment of the present invention will be described with reference to the drawings and the like. However, the present invention can be implemented in various forms without departing from the spirit and scope of the invention, and is not limited to the description of the embodiments exemplified below.

The drawings sometimes show the width, thickness, shape, and the like of the respective portions in order to clarify the description, but the present invention is merely illustrative and does not limit the explanation of the present invention. In the specification and the drawings, the same reference numerals will be given to the elements having the same functions as those described in the drawings, and the description thereof will be omitted.

In the case of the present specification and the patent application, when a structure in which another structure is disposed on a certain structure is described as being "on", unless otherwise specified, "including" There are two cases where the other structure is placed directly above the structure, and the case where the other structure is placed above the structure by the different structures. Further, in the specification and the patent application, "U" and its arrows indicate upper or upper in the cross section, and "D" and its arrows indicate lower or lower in the cross section.

In the context of the present specification and the patent application, the expression "overlap" of a structure with another structure means that at least a part of the structure overlaps when looking down on the structures. In other words, it means that when any one of these structures is above or below the other and views of such structures from above or below, at least a portion overlaps each other.

The configuration of the through electrode substrate 100 and the method of manufacturing the through electrode substrate 100 according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 6 .

[Configuration of Semiconductor Device]
A plan view showing an example of a semiconductor device 1000 is disclosed in FIG. 1. The semiconductor device 1000 has a through electrode substrate 100 which is one embodiment of the present invention. The semiconductor device 1000 includes a printed circuit board 200, a through electrode substrate 100, an integrated circuit 300, bumps 122, and a wiring layer 120.

The integrated circuit 300 may be provided in plural numbers on the wiring layer 120, and the plurality of integrated circuits 300 may be electrically connected to each other through the wiring layer 120. Further, each integrated circuit 300 is electrically connected to the through electrode substrate 100 through a conductor such as the wiring layer 120 and the bump 122. The through electrode substrate 100 is electrically connected to the printed circuit board 200 through a through electrode 108 which will be described later.

FIG. 1 shows an example in which one integrated circuit 300 electrically connected to the wiring layer 120 is mounted on the through electrode substrate 100, but is not limited to the example shown here. The number of terminals of the integrated circuit 300 may be four, or may be five or more, or may be less than four. Further, the number of the integrated circuits 300 that are formed in the through electrode substrate 100 may be plural or one. Further, the integrated circuit 300 that is formed in the through-electrode substrate 100 may be configured with a plurality of integrated circuits having different numbers of terminals. It can be appropriately selected depending on the use of the semiconductor device 1000. 1 shows an example in which the through electrode substrate 100 is mounted on the printed circuit board 200, but the invention is not limited thereto. The through-electrode substrate 100 may be formed, for example, on a glass substrate or on a flexible material such as an FPC. It can be appropriately selected depending on the use of the semiconductor device.

[Configuration of wiring board 1]
An example of a through electrode substrate according to an embodiment of the present invention is shown in Fig. 2 . Fig. 2 (A) is a plan view showing a through electrode substrate according to an embodiment of the present invention. Fig. 2(B) is a cross-sectional view taken along the line of Fig. 2(A).

A partial plan view and a partial cross-sectional view of the through electrode substrate 100 shown in Fig. 1 are shown in Fig. 2 . The through electrode substrate 100 includes a glass substrate 102 and a through electrode 108 provided on the inner wall of the through hole 10, and the glass substrate 102 has a first surface 102a, a second surface 102b, and a through hole penetrating the first surface 102a and the second surface 102b. 10. Further, in FIG. 2, a part of the wiring layer 120 as shown in FIG. 1 may be provided on the first surface 102a. The first wiring 104 shown in FIG. 2 is a part of the wiring layer 120 shown in FIG.

The wiring layer 120 and the bump 122 are electrically connected to the through electrode 108. The through electrode 108 is electrically connected to the bump 122. The integrated circuit 300 is electrically connected to the wiring layer 120 through the bumps 122. The through electrode substrate 100 is electrically connected to the printed circuit board 200 through the bump 122. Further, the first surface 102a and the second surface 102b are in the relationship of the upper surface and the lower surface, or the surface and the back surface with respect to the through electrode substrate 100.

As shown in FIG. 2, the through electrode substrate 100 has a "glass substrate 102", a "through hole 10 that penetrates the second surface 102b from the first surface 102a of the glass substrate 102", and "formed on the first surface 102a of the glass substrate 102. The first wiring 104" and the "adhesion layer 106 provided on the inner wall of the through hole 10 and the through electrode 108 formed on the adhesion layer 106" are electrically connected to the through electrode 108 on the first surface 102a of the glass substrate 102. The second wiring 110 is connected to the first wiring 104.

In the present embodiment, an example in which a glass substrate 102 made of a glass material is used as a substrate is disclosed. However, the present invention is not limited thereto, and a tantalum substrate made of a material containing tantalum may be used, and a material containing alumina may be used. Ceramic substrate.

The glass substrate 102 has the first surface 102a and the second surface 102b as two main surfaces, and the first wiring 104 is formed on at least the first surface 102a. The first wiring 104 may be, for example, a TFT (thin film transistor).

In the present embodiment, the first wiring 104 is formed only on the first surface 102a. However, the present invention is not limited thereto, and wiring may be formed on both surfaces of the first surface 102a and the second surface 102b of the glass substrate 102. . The material of the first wiring 104 can be, for example, copper or the like.

The thickness of the glass substrate 102 can be, for example, about 200 μm to 900 μm.

The "adhesion layer 106" and the "through electrode 108 formed on the adhesion layer 106" are formed on the side wall of the through hole 10 of the glass substrate 102. The adhesion layer 106 functions as a substrate for forming a material of the through electrode 108 on the glass substrate 102 by electroless plating. The adhesion layer 106 may be formed of a material containing an organic resin. The material containing the organic resin constituting the adhesion layer 106 may be, for example, an epoxy resin, an acrylic resin, a polyimide resin, an urethane resin, or the like. By forming the adhesion layer 106, a functional group having excellent catalyst adsorption property can be further introduced compared to the surface of the glass, and electroless plating such as copper or nickel which is excellent in adhesion can be formed.

The through electrode 108 is formed on a portion of the surface of the glass substrate 102 where the adhesion layer 106 is formed. Since the through electrode 108 is formed to obtain the conduction of the glass substrate 102 up and down, it is formed so as to cover all the side walls in the through hole 10 of the glass substrate 102, and is formed in a hollow cylindrical shape along the inner wall of the through hole 10. The hollow portion of the through electrode 108 is sometimes referred to as a through hole 130. Further, the through electrode 108 may have a land 108-1 (larger than the perforation diameter) on the peripheral edge portion of the perforation 130 on the first surface 102a or the second surface 102b of the glass substrate 102 in order to be electrically connected to the upper and lower wirings. The "bearing (connecting disk) portion). The material of the through electrode 108 may be, for example, copper or nickel.

As shown in FIG. 2, the through hole 10 and the through hole 130 may be concentric circles having the same central axis. The diameter of the through hole 10 may be, for example, about 40 μm to 140 μm, and the diameter of the through hole 130 may be, for example, about 30 μm to 135 μm. In the wiring substrate shown in FIG. 2, the diameter of the through hole 10 is larger than the diameter of the through hole 130.

Although the hollow perforation 130 is disclosed in FIG. 2, the inside of the perforation 130 may be filled with the same plating as the through electrode 108, or may be filled with an organic resin or a metal different from the through electrode 108.

On the first surface 102a of the glass substrate 102, a second wiring 110 that is in contact with the glass substrate 102 and the first wiring 104 and the through electrode 108 is formed. The second wiring 110 has a function as a cross-linked wiring that electrically connects the first wiring 104 and the through electrode 108 to the land 108-1 on the first surface 102a. The material of the second wiring 110 may be any material if it is a material having conductivity such as copper, nickel or tin.

As shown in FIG. 2, the second wiring 110 may be a single layer, but the present invention is not limited thereto. For example, when the material of the second wiring 110 is copper, it may have a multilayer structure in which one layer or more of Ti is contained between the copper and the glass substrate 102 in order to improve the adhesion between the copper and the glass substrate 102. An adhesion layer composed of a low-resistance metal film.

Fig. 10 is a cross-sectional view showing a through electrode substrate according to an embodiment of the present invention. The second wiring 110' shown in FIG. 10 has a two-layer structure formed on the glass substrate 102 with an adhesion layer 110-1 made of a low-resistance metal mold such as Ti and formed on the adhesion layer 110-1. The second wiring portion 110-2 made of a conductive material such as copper is laminated. According to the configuration shown in FIG. 10, the adhesion between the second wiring portion 110-2 of the second wiring 110' and the glass substrate 102 can be improved. Further, although not shown, the adhesion layer 110-1 of the second wiring 110' shown in FIG. 10 may have a multilayer structure of two or more layers of a low-resistance metal film.

In addition, the second wiring 110 may be a wiring that can be electrically connected to the first wiring 104 and the through electrode 108 which are formed separately on one main surface of the glass substrate 102, and may be electrically connected. For example, the second wiring 110 may be a wire bonding that electrically connects the first wiring 104 and the through electrode 108 , or may be a solder that electrically connects the first wiring 104 and the through electrode 108 . The material of the second wiring 110 may be, for example, a metal oxide such as nickel, gold, tin, copper, aluminum, titanium, chromium or ITO.

As shown in FIG. 2, a plurality of second wirings 110 can be connected to one through electrode 108 so as to be pulled in different directions. However, the invention is not limited thereto. Figure 11 is a plan view of a through electrode substrate according to an embodiment of the present invention. As shown in FIG. 11 , only one second wiring 110 may be connected to one through electrode 108 and electrically connected to the first wiring 104 .

The first wiring 104, the second wiring 110, and the through electrode 108 are formed of a material having conductivity. For example, gold, silver, copper, platinum, nickel, rhodium, ruthenium or iridium may be used. The first wiring 104, the second wiring 110, and the blade-passing electrode 108 may be made of the same material or may be used in combination with different materials. By forming the first wiring 104, the second wiring 110, and the through electrode 108 with the same material, the characteristic impedance matching can be improved.

In the present embodiment, since the through electrode 108 and the first wiring 104 are electrically connected by the second wiring 110, conduction between the through electrode 108 and the first wiring 104 on the glass substrate 102 can be ensured, and electrical reliability can be improved.

[Modification of Structure 1 of Wiring Substrate]
In the example shown in FIG. 2, the second wiring 110 is directly connected to the land 108-1 on the first surface 102a of the through electrode 108, but the present invention is not limited thereto. Fig. 9 is a view showing a modification of the through electrode substrate according to the embodiment of the present invention shown in Fig. 2; Fig. 9 (A) is a plan view showing a through electrode substrate according to an embodiment of the present invention. Fig. 9(B) is a cross-sectional view taken along the line indicated by Fig. 9(A).

As shown in FIG. 9, the through electrode 108 may have a wiring portion 108-2 extended from the land 108-1 formed on the first surface 102a. In this case, the second wiring 110 may be directly connected to the wiring portion 108-2 extended from the land 108-1 formed on the first surface 102a of the through electrode 108.

[Manufacturing Method 1 of Wiring Substrate]
A method of manufacturing the through electrode substrate 100 according to the first embodiment of the present invention shown in FIG. 2 will be described with reference to FIGS. 2 to 6 . In addition, in FIGS. 3 to 6, the same configurations as those in FIGS. 1 to 2 are denoted by the same reference numerals.

First, the first wiring 104 (see FIG. 3) is formed on the glass substrate 102. The first wiring 104 may be an element constituting a TFT or the like. In FIG. 3, the first wiring 104 is formed on the first surface 102a of the glass substrate 102. However, the first wiring 104 is not limited thereto, and the first wiring 104 may be formed not only on the first surface 102a but also on the second surface 102b.

Next, the glass substrate 102 of the first wiring 104 is formed on one surface or both surfaces, and a through hole 10 penetrating the first surface 102a and the second surface 102b is formed (see FIG. 4). The through hole 10 is formed at a position of the glass substrate 102 and is a portion where the first wiring 104 is not formed. The through hole 10 is formed at a position separated from the first wiring 104. The shape of the through hole 10 may be a cylindrical shape in which the upper and lower apertures are substantially constant.

The method of forming the through hole 10 in the glass substrate 102 can be any method.

Next, an adhesion layer 106 is formed on the inner wall of the through hole 10 of the glass substrate 102, and the peripheral edge portion of the through hole on the first surface 102a and the second surface 102b (see FIG. 5). The adhesion layer 106 can be formed, for example, by spin coating, dip coating, spray coating, or the like. The adhesion layer 106 functions as an adhesion layer for forming a film through the electrode material. The adhesion layer 106 may be formed of a material containing an organic resin.

Next, a portion of the surface of the glass substrate 102 in which the adhesion layer 106 is formed is formed to form a through electrode 108 (see FIG. 6). The through electrode 108 is formed on the adhesion layer 106 formed on the surface of the glass substrate 102. The through electrode 108 is formed by forming copper, nickel, or the like into a film by electroless plating.

Here, when a modification of the structure 1 of the wiring board shown in FIG. 9 is manufactured, the wiring portion 108-2 extended from the land 108-1 formed on the first surface 102a by the through electrode 108 may be The through electrode 108 is simultaneously formed in the above steps. Specifically, a portion where the adhesion layer 106 is formed on the surface of the glass substrate 102 is formed, and a through electrode 108 including the land 108-1 and the wiring portion 108-2 extended from the land 108-1 is formed (refer to FIG. 9). . The through electrode 108 is formed on the adhesion layer 106 formed on the surface of the glass substrate 102. The through electrode 108 is formed by forming copper, nickel, or the like into a film by electroless plating.

In the present invention, by using the adhesion layer 106 as an adhesion layer or a reducing agent, the through electrode material can be formed into the through hole 10 formed in the glass substrate 102 by electroless plating or the like.

There is also a method different from the present invention, that is, the adhesion layer 106 is not formed, and a through electrode material such as copper is formed into the through hole 10 formed in the glass substrate 102 by sputtering.

When the aspect ratio of the through hole of the glass substrate is low (for example, when the thickness is thin or the aperture is large), an electrode material such as copper is formed in the through hole by sputtering. In the case of the method, a through electrode can also be formed.

The aspect ratio refers to the value of the thickness/aperture, and the relationship between the "thickness of the glass substrate 102" and the "aperture of the through hole of the glass substrate 102" is expressed by the aspect ratio of the through hole of the glass substrate. For example, when the thickness of the plate is thick or the aperture is small, the aspect ratio becomes high, and when the thickness of the plate is thin or the aperture is large, the aspect ratio becomes small.

However, when the aspect ratio of the through-hole of the glass substrate is high (for example, when the thickness of the plate is thick or the aperture is small), the electrode material cannot be sufficiently formed by sputtering to be away from the main surface of the glass substrate. Since the inside of the through hole is formed, a blank portion (void or hollow hole) in which the electrode material is not formed inside the through hole is likely to occur, and there is a problem in electrical reliability. For example, when the aspect ratio of the through hole of the glass substrate is 3 or more, when the sputtering method is used, voids or hollow holes are likely to occur in the through hole, which causes a problem in electrical reliability.

In the present invention, when the adhesion layer 106 is used as the adhesion layer or the reducing agent, even when the aspect ratio of the through hole 10 formed in the glass substrate 102 is high, the electroless plating method or the like can be sufficiently performed. The through electrode material is formed in the through hole 10 . Therefore, the present invention is particularly useful for a wiring board having a high-density arrangement in which the aspect ratio of the through-holes 10 of the glass substrate 102 is 3 or more, which can further improve electrical reliability.

Next, in order to electrically connect the first wiring 104 formed on the glass substrate 102 and the through electrode 108 formed at a position separated from the first wiring 104, the first wiring 104 and the glass substrate 102 are in contact with the through electrode 108. The second wiring 110 (see FIG. 2). In FIG. 2, the second wiring 110 is formed to be in contact with the first surface 102a of the glass substrate by a sputtering method or the like, but the present invention is not limited thereto.

As described above, in order to form the through electrode 108 by electroless copper plating on the glass substrate 102, it is necessary to form the adhesion layer 106 as an adhesion layer on the glass substrate 102. In addition, when the through electrode 108 is formed only through the adhesion layer 106, conduction between the wiring layer such as the first wiring 104 and the through electrode 108 which are formed in advance on the glass substrate 102 cannot be obtained. Therefore, in order to obtain the conduction between the wiring layer such as the first wiring 104 formed on the glass substrate 102 and the through electrode 108 formed in the transmission adhesion layer 106, the second wiring 110 is provided as the crosslinked wiring.

In the present invention, since the second wiring 110 is electrically connected to the first wiring 104 and the through electrode 108 which are formed on one main surface of the glass substrate 102 in the form of a crosslinked wiring, the through electrode 108 and the first wiring 104 can be secured. The conduction can provide a through-electrode substrate with improved electrical reliability.

Moreover, as shown in FIG. 2, the second wiring 110 may be a wiring which is formed in contact with the first surface 102a of the glass substrate by a sputtering method or the like. In this case, the second wiring 110 is disposed so as to be in direct contact with one main surface of the glass substrate 102 (uninsulated and separated), and directly contacts the first wiring 104 and the through electrode 108 on the same surface (except for the through electrode 108 and The glass substrate 102 is cross-linked by the adhesion layer 106. Specifically, in FIG. 2, the first wiring 104 directly contacting the first surface 102a of the glass substrate and the lands 108-1 of the penetration electrode 108 on the first surface 102a are directly contacted with the glass substrate. The second wiring 110 of the first surface 102a is electrically connected.

According to the structure of the second wiring 110 shown in FIG. 2, the first wiring 104 directly contacting the first surface 102a of the glass substrate and the lands 108-1 of the through electrode 108 are directly in contact with the glass substrate. Since the second wiring 110 of the one surface 102a is electrically connected, the wiring density in the layer directly contacting the glass substrate first surface 102a such as the lands 108-1 on which the first wiring 104 or the through electrode 108 is formed can be increased. In this manner, when the wiring density in the layer directly in contact with the glass substrate first surface 102a is increased, it becomes easy to form wiring for other layers, and the degree of freedom in designing wiring becomes high.

Further, since the first wiring 104 and the lands 108-1 of the through electrodes 108 are connected in the same layer that is in direct contact with the first surface 102a of the glass substrate, the wiring length of the second wiring 110 can be shortened, so that the electric resistance is low. Stable power up. Further, since the second wiring 110 is in direct contact with the surface of the first wiring 104 or the connection pad 108-1 of the through electrode 108, the wiring layer can be made lower in profile. Further, when another wiring is laminated on the wiring layer through the insulating layer, the flatness of the lower wiring layer can be ensured.

Further, since the first wiring 104 and the lands 108-1 and the second wiring 110 of the through electrode 108 are formed by using the first surface 102a of the same glass substrate as a base, the thermal expansion of the first surface 102a of the glass substrate is generated. Since the stress acts uniformly on each of the first wiring 104, the through electrode 108, and the second wiring 110, the wiring is less likely to be twisted or broken, and the connection reliability is increased.

[Configuration of wiring board 2]
As a configuration 2 of the wiring board, a through electrode substrate according to another embodiment of the present invention will be described with reference to FIGS. 7 and 8. The same components as those in FIGS. 1 and 2 are denoted by the same reference numerals.

The through electrode substrate 100' shown in FIG. 7 includes the glass substrate 102, the first through electrode 108a, the first wiring 104, and the second wiring 110 which constitute the through electrode substrate 100 shown in FIG. The through electrode substrate 100' shown in FIG. 7 further includes an insulating layer 112, and the insulating layer 112 has a third wiring 114 constituting a wiring layer of the upper layer of the first wiring 104. The insulating layer 112 has an opening 20 in the first through electrode 108a, and a second through electrode 108b is formed on the inner wall of the opening 20. The second through electrode 108b and the third wiring 114 have a configuration in which the fourth wiring 116 on the insulating layer 112 is crosslinked.

The insulating layer 112 is provided to cover the first wiring 104, the second wiring 110, and the first through electrode 108 on the first surface 102a of the glass substrate 102. The insulating layer 112 is an insulating layer made of an organic resin material, and functions as an interlayer insulating film for laminating another wiring formed of the third wiring layer 114 on the wiring layer formed of the first wiring 104.

The insulating layer 112 has an opening 20 at a position overlapping the through hole 10 in which the first through electrode 108a is formed, and a second through electrode 108b is formed on the inner wall of the opening 20 of the insulating layer 112.

Since the second through electrode 108b is formed in the opening 20 of the insulating layer 112 made of an organic resin material, it is different from the first through electrode 108a, and it is not necessary to have the adhesive layer interposed therebetween. Therefore, the second through electrode 108b can be directly formed on the surface of the insulating layer 112 by a method such as electroless copper plating.

The second through electrode 108b electrically connects the third wiring 114 formed on the upper layer and the first through electrode 108a, and is formed on the second surface 114 formed on the first surface 102a of the glass substrate 102 and on the second surface 102b. The other wirings and the like are connected to each other.

The second through electrode 108b and the third wiring are formed at a position separated from each other on the insulating layer 112, and the fourth wiring 116 crosslinks the second through electrode 108b and the third wiring on the insulating layer 112, and is electrically connected to the layer.

The through electrode substrate 100' shown in FIG. 7 has a configuration in which a wiring layer including the first wiring 104 and a wiring layer including the third wiring are laminated on the first surface 102a of the glass substrate 102. In the wiring layer of the wiring 104, the first through electrode 108a that is in direct contact with the first surface 102a of the glass substrate 102 and the first wiring 104 are in contact with the second wiring 110 that is in direct contact with the first surface 102a of the glass substrate 102. Union. Further, the wiring layer including the third wiring 114 has a configuration in which the second through electrode 108b that is in direct contact with the upper surface of the insulating layer 112 and the third wiring 114 are in direct contact with the upper surface of the insulating layer 112. 116 crosslinks at this layer. The other configuration is the same as that of the through electrode substrate 100 shown in FIGS. 1 and 2 .

In FIG. 7, the wiring layer including the first wiring 104 and the wiring layer including the third wiring are laminated on the first surface 102a of the glass substrate 102. However, the present invention is not limited thereto, and may be laminated. 3 or more wiring layers.

Further, as shown in FIG. 7 , the through electrode substrate 100 ′ may further include a third through electrode 108 c that electrically connects the third wiring 114 and other wirings formed on the second surface 102 b of the glass substrate 102 up and down. As shown in FIG. 7, an insulating layer 112 may be formed between the third through electrode 108c and the glass substrate 102. As a method of manufacturing the insulating layer 112, for example, the insulating layer 112 can be formed by applying an insulating liquid resist film to the surface of the glass substrate 102 using a roller coater. Alternatively, the insulating layer 112 may be formed using a dip coater or a spray coater.

Fig. 8 is a plan view of the through electrode substrate shown in Fig. 7; In Fig. 8, the uppermost wiring or the through electrode is indicated by a solid line, and the wiring or the through electrode located at the lower layer is indicated by a broken line in a perspective view. As shown in FIG. 7 and FIG. 8 , the plurality of first through electrodes 108 a are connected to each other in the wiring layer including the first wiring 104 , and the second through electrodes 108 b are included in the upper layer of the first wiring 104 , that is, the third wiring 114 . The wiring layer is connected to the third through electrode 108c which is another through electrode.

In the fourth wiring 116, the third wiring 114 and the second through electrode 108b which are separated and formed on the insulating layer 112 are cross-linked in this layer, so that the second through electrode 108b and the third wiring 114 can be secured. Turning on, the through electrode substrate 100' having improved electrical reliability can be provided.

As shown in FIG. 7 and FIG. 8, the second through-wire 108b has a lands 108b-1 formed on the peripheral portion of the through-hole 130b of the hollow portion, and this lands function as a connecting portion that electrically connects the other wires to the through electrodes. Further, the first through electrode 108a and the third through electrode 108c may have a land at the peripheral portion of the perforation similarly to the second through electrode 108b.

According to the through electrode substrate 100' having the plurality of wiring layers shown in FIGS. 7 and 8, electrical reliability can be ensured, and at the same time, the wiring density can be further increased by stacking the wiring layers.

The respective embodiments described above as the embodiments of the present invention can be implemented by being combined as appropriate without any contradiction. Further, in the respective embodiments, it is intended that the person skilled in the art adds, deletes, or changes the design of the appropriate constituent elements, and the scope of the present invention is included in the scope of the present invention.

Further, even if it is a different effect from the effects achieved by the above-described respective embodiments, it can be understood as a borrowing as long as it is clearly known from the description of the specification or can be easily expected by the industry. The person achieved by the present invention.

10‧‧‧through holes

20‧‧‧ openings

100, 100'‧‧‧through electrode substrate

102‧‧‧ glass substrate

102a‧‧‧1st

102b‧‧‧2nd

104‧‧‧1st wiring

106, 110-1‧‧ ‧ close layer

108, 108a, 108b‧‧‧through electrodes

108c‧‧‧3rd through electrode

108-1, 108b-1‧‧‧Connector

108-2‧‧‧Wiring section

110‧‧‧2nd wiring

110-2‧‧‧2nd wiring part

112‧‧‧Insulation

114‧‧‧3rd wiring

116‧‧‧4th wiring

120‧‧‧Wiring layer

122‧‧‧Bumps

130, 130b‧‧‧ perforation

200‧‧‧Printed substrate

300‧‧‧ integrated circuit

1000‧‧‧Semiconductor device

Fig. 1 is a cross-sectional view showing a semiconductor device using a through electrode substrate according to an embodiment of the present invention.

Fig. 2 is a plan view showing a through electrode substrate according to an embodiment of the present invention. Fig. 2(B) is a cross-sectional view taken along the line indicated by Fig. 2(A).

Fig. 3 is a cross-sectional view showing a method of manufacturing a through electrode substrate according to an embodiment of the present invention.

Fig. 4 is a cross-sectional view showing a method of manufacturing a through electrode substrate according to an embodiment of the present invention.

Fig. 5 is a cross-sectional view showing a method of manufacturing a through electrode substrate according to an embodiment of the present invention.

Fig. 6 is a cross-sectional view showing a method of manufacturing a through electrode substrate according to an embodiment of the present invention.

Figure 7 is a cross-sectional view showing a through electrode substrate according to another embodiment of the present invention.

Fig. 8 is a plan view of the through electrode substrate shown in Fig. 7;

Fig. 9 is a plan view showing a through electrode substrate according to an embodiment of the present invention. Fig. 9(B) is a cross-sectional view taken along the line indicated by Fig. 9(A).

Figure 10 is a cross-sectional view showing a through electrode substrate according to an embodiment of the present invention.

Fig. 11 is a plan view showing a through electrode substrate according to an embodiment of the present invention.

Claims (9)

A through electrode substrate having: a substrate composed of an inorganic material; a first wiring provided on the substrate; a through hole provided in the substrate at a position separated from the first wiring; a through electrode disposed on an inner wall of the through hole; and The first wiring and the second wiring of the through electrode are connected. The through electrode substrate according to claim 1, further comprising an adhesion layer provided between the substrate and the through electrode. The through electrode substrate according to claim 2, wherein the second wiring is further in contact with the adhesion layer. The through electrode substrate according to claim 2, wherein the adhesion layer contains an organic resin material. The through electrode substrate according to any one of claims 1 to 4, further comprising: An insulating layer provided on the first wiring, the second wiring, and the through electrode; a third wiring disposed on the insulating layer; and The fourth wiring that is in contact with the insulating layer, the third wiring, and the through electrode. The through electrode substrate according to claim 5, wherein the insulating layer is made of an organic resin material, and the through electrode is provided on an inner wall of the through hole and inside an opening of the insulating layer. The through electrode substrate according to claim 6, wherein the through electrode comprises: a first through electrode provided on an inner wall of the through hole; and The second through electrode is provided inside the opening of the insulating layer. The through electrode substrate according to any one of claims 1 to 4, wherein the through hole has an aspect ratio of 3 or more. A semiconductor device using the through electrode substrate according to any one of claims 1 to 4.