WO2019065656A1

WO2019065656A1 - Through-electrode substrate and semiconductor device using through-electrode substrate

Info

Publication number: WO2019065656A1
Application number: PCT/JP2018/035524
Authority: WO
Inventors: 進中澤; 恵大笹生; 直大高橋; 宏樹古庄; 敦子千吉良; 祐治成田
Original assignee: 大日本印刷株式会社
Priority date: 2017-09-29
Filing date: 2018-09-25
Publication date: 2019-04-04
Also published as: TW201924505A; JP7180605B2; JPWO2019065656A1; TWI782100B

Abstract

This through-electrode substrate comprises: a substrate constituted by an inorganic material; first wiring disposed on the substrate; a through-hole disposed on the substrate at a position apart from the first wiring; a through-electrode disposed on the inner wall of the through-hole; and second wiring connecting the first wiring and the through-electrode. According to the present disclosure, electrical continuity between the through-electrode and the wiring on the substrate is ensured in a high aspect ratio through-electrode substrate using a glass substrate, and a through-electrode substrate with improved electrical reliability and a method for producing the same can be provided.

Description

Semiconductor device using through electrode substrate and through electrode substrate

The present disclosure relates to a through electrode substrate. In particular, the present invention relates to a through electrode substrate having a crosslinked wiring which bridges the through electrode and the wiring on the substrate.

In recent years, with miniaturization and speeding up of electronic devices such as smartphones and notebook computers, higher density and higher speed are being promoted also for semiconductor parts constituting electronic devices and wiring boards on which semiconductor parts are mounted. .

In a multilayer wiring board in which a plurality of wiring boards are stacked, in order to connect upper and lower wirings, a through electrode board in which a through electrode penetrating through the wiring board is formed is used. As a method of forming such a through electrode, in the case where the base material is an organic substrate made of an organic substance, it is formed on the substrate by performing electroless copper plating to form a wiring in the through hole and obtain conduction. It is possible to obtain conduction between the formed wiring and the through electrode formed in the through hole.

Patent Document 1 discloses a printed wiring board having a via hole in which a bottomed hole is formed in a substrate whose base material is glass epoxy and a conductive layer is formed in the bottomed hole.

JP 2008-205070 A

However, in the case where the substrate is a substrate made of an inorganic material such as glass, silicon, or ceramic, it is difficult to uniformly roughen the inner wall of the through hole, and in order to form electroless copper plating, an adhesion layer is formed in advance. Need to form. Moreover, when forming an adhesion layer and performing electroless copper plating, copper plating is only formed in the part in which the adhesion layer was formed. In this case, when the wiring on the substrate and the through electrode in the through hole are connected by electroless copper plating, the wiring and the through electrode are connected through the insulating adhesion layer, which causes a problem in electrical reliability. .

In view of the above problems, according to the present disclosure, in a high aspect ratio through electrode substrate using a substrate made of an inorganic material such as glass, conduction between the through electrode and the wiring on the substrate is ensured, and the electrical reliability is improved. An object of the present invention is to provide a through electrode substrate and a method of manufacturing the same.

A through electrode substrate according to an embodiment of the present disclosure is provided on a substrate made of an inorganic material, a first wiring provided on the substrate, and the substrate at a position separated from the first wiring. It has a penetration hole, the penetration electrode provided in the inner wall of the penetration hole, and the 2nd wiring which connects the 1st wiring and the penetration electrode.

The penetration electrode substrate concerning one embodiment of this indication may further have an adhesion layer provided between the substrate and the penetration electrode.

In the through electrode substrate according to an embodiment of the present disclosure, the second wiring may further be in contact with the adhesion layer.

In the through electrode substrate according to the embodiment of the present disclosure, the adhesion layer may include an organic resin material.

A through electrode substrate according to an embodiment of the present disclosure includes: an insulating layer provided on the first wiring, the second wiring, and the through electrode; and a third wiring provided on the insulating layer. The semiconductor device may further include a fourth wiring in contact with the insulating layer, the third wiring, and the through electrode.

In the through electrode substrate according to an embodiment of the present disclosure, the insulating layer is made of an organic resin material, and the through electrode is provided on the inner wall of the through hole and an opening provided in the insulating layer. May be

In the through electrode substrate according to an embodiment of the present disclosure, the through electrode is provided inside a first through electrode provided on the inner wall of the through hole and the opening provided in the insulating layer. It may include two through electrodes.

In the through electrode substrate according to the embodiment of the present disclosure, the aspect ratio of the through hole may be 3 or more.

According to the present disclosure, in a through electrode substrate with a high aspect ratio using a glass substrate, a conduction between the through electrode and the wiring on the substrate is ensured, and a through electrode substrate with improved electrical reliability and a method of manufacturing the same are provided. can do.

1 is a cross-sectional view of a semiconductor device using a through electrode substrate according to an embodiment of the present disclosure. FIG. 2A is a top view of a through electrode substrate according to an embodiment of the present disclosure. FIG. 2B is a cross-sectional view taken along the cutting line shown in FIG. It is a sectional view explaining a manufacturing method of a penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a manufacturing method of a penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a manufacturing method of a penetration electrode substrate concerning one embodiment of this indication. It is a sectional view explaining a manufacturing method of a penetration electrode substrate concerning one embodiment of this indication. FIG. 7 is a cross-sectional view of a through electrode substrate according to another embodiment of the present disclosure. It is a top view of the penetration electrode substrate shown in FIG. FIG. 9A is a top view of a through electrode substrate according to an embodiment of the present disclosure. FIG. 9B is a cross-sectional view taken along the section line shown in FIG. It is a sectional view of a penetration electrode substrate concerning one embodiment of this indication. It is a top view of the penetration electrode substrate concerning one embodiment of this indication.

Hereinafter, each embodiment of the present disclosure will be described with reference to the drawings and the like. However, the present disclosure can be implemented in various aspects without departing from the scope of the present disclosure, and is not construed as being limited to the description contents of the embodiments illustrated below.

Although the drawings may schematically represent the width, thickness, shape, etc. of each portion in comparison with the actual embodiment in order to make the description clearer, this is merely an example, and the interpretation of the present disclosure is limited. It is not something to do. In the present specification and the drawings, elements having the same functions as those described with reference to the existing drawings may be denoted by the same reference numerals and redundant description may be omitted.

In the present specification and claims, when expressing an aspect in which another structure is disposed on a certain structure, when it is simply described as “on”, unless otherwise specified, it refers to a certain structure. As described above, it includes both the case where another structure is arranged immediately above and the case where another structure is arranged above another structure via another structure. Also, in the present specification and claims, “U” and its arrow represent upper or upper in the cross section, and “D” and its arrow represent lower or lower in the cross section.

In the present specification and claims, the expression "overlap" between a certain structure and another structure means that at least a part of the structures overlap in a plan view of these structures. In other words, one of these structures is located above or below the other, and these structures at least partially overlap each other when viewed from the top or the bottom. .

The configuration of the through electrode substrate 100 and the method of manufacturing the through electrode substrate 100 according to the first embodiment of the present disclosure will be described with reference to FIGS. 1 to 6.

[Structure of semiconductor device]
FIG. 1 is a top view showing an example of a semiconductor device 1000 having a through electrode substrate 100 which is an embodiment of the present disclosure. The semiconductor device 1000 includes a printed circuit board 200, a through electrode substrate 100, an integrated circuit 300, bumps 122, and a wiring layer 120.

A plurality of integrated circuits 300 may be provided on the wiring layer 120, and the plurality of integrated circuits 300 may be electrically connected to each other through the wiring layer 120. Each integrated circuit 300 is electrically connected to the through electrode substrate 100 via a conductor such as the wiring layer 120 and the bumps 122. The through electrode substrate 100 is electrically connected to the printed circuit board 200 through a through electrode 108 described later.

Although FIG. 1 shows an example in which one integrated circuit 300 electrically connected to the wiring layer 120 is mounted on the through electrode substrate 100, the present invention is not limited to the example shown here. The number of terminals of the integrated circuit 300 may be four, five or more, or less than four. Further, the number of integrated circuits 300 mounted on the through electrode substrate 100 may be plural or one. Furthermore, in the integrated circuit 300 mounted on the through electrode substrate 100, a plurality of integrated circuits having different numbers of terminals may be mounted. It can be selected as appropriate depending on the application of the semiconductor device 1000. Although FIG. 1 shows an example in which the through electrode substrate 100 is mounted on the printed circuit board 200, the present invention is not limited to this example. The through electrode substrate 100 may be mounted, for example, on a glass substrate or on a flexible material such as an FPC. It can be selected as appropriate depending on the application of the semiconductor device.

[Structure 1 of wiring board]
FIG. 2 illustrates an example of a through electrode substrate according to an embodiment of the present disclosure. FIG. 2A is a top view of a through electrode substrate according to an embodiment of the present disclosure. FIG. 2B is a cross-sectional view taken along the cutting line shown in FIG.

FIG. 2 shows a partial top view and a partial cross-sectional view of through electrode substrate 100 shown in FIG. The through electrode substrate 100 includes a first surface 102 a, a second surface 102 b, a glass substrate 102 having a through hole 10 penetrating the first surface 102 a and the second surface 102 b, and a through electrode provided on the inner wall of the through hole 10. It has 108. Further, although partially omitted in FIG. 2, a multilayer wiring layer such as the wiring layer 120 shown in FIG. 1 may be provided on the first surface 102a. The first wiring 104 shown in FIG. 2 constitutes a part of the wiring layer 120 shown in FIG.

The wiring layer 120 and the bumps 122 are electrically connected to the through electrodes 108. The through electrode 108 is electrically connected to the bump 122. The integrated circuit 300 is electrically connected to the wiring layer 120 through the bumps 122. The through electrode substrate 100 is electrically connected to the printed circuit board 200 through the bumps 122. The first surface 102 a and the second surface 102 b are in a relationship of top and bottom or front and back with respect to the through electrode substrate 100.

As shown in FIG. 2, the through electrode substrate 100 is formed on the glass substrate 102, the through holes 10 penetrating the first surface 102 a to the second surface 102 b of the glass substrate 102, and the first surface 102 a of the glass substrate 102. And the adhesion layer 106 provided on the inner wall of the through hole 10 and the penetration electrode 108 formed on the adhesion layer 106, and the penetration is made on the first surface 102a of the glass substrate 102. A second wire 110 electrically connecting the electrode 108 and the first wire 104 is provided.

In this embodiment, an example using a glass substrate 102 made of a glass material as a substrate is shown, but the present disclosure is not limited to this, and a silicon substrate made of a material containing silicon, a material containing alumina A ceramic substrate made of the above may be used.

The glass substrate 102 has a first surface 102 a and a second surface 102 b as two main surfaces, and the first wiring 104 is formed on at least the first surface 102 a. The first wiring 104 may form, for example, a thin film transistor (TFT).

In the present embodiment, the first wiring 104 is formed only on the first surface 102a, but the present disclosure is not limited thereto, and both surfaces of the first surface 102a and the second surface 102b of the glass substrate 102 are formed. Wiring may be formed on the The material of the first wiring 104 may be, for example, copper.

The plate thickness of the glass substrate 102 may be, for example, about 200 μm to 900 μm.

The adhesion layer 106 and the penetration electrode 108 formed on the adhesion layer 106 are formed on the side wall in the through hole 10 of the glass substrate 102. The adhesion layer 106 functions as a base for forming the material of the through electrode 108 on the glass substrate 102 by electroless plating. The adhesion layer 106 may be formed of a material containing an organic resin. The material containing the organic resin constituting the adhesion layer 106 may be, for example, an epoxy resin, an acrylic resin, a polyimide resin, a urethane resin or the like. By forming the adhesion layer 106, it is possible to introduce a functional group which is more excellent in catalyst adsorption than the glass surface, and to form a film of electroless plating of copper, nickel or the like having good adhesiveness.

The through electrode 108 is formed on a portion of the surface of the glass substrate 102 where the adhesion layer 106 is formed. Since the through electrode 108 is formed to obtain conduction between the upper and lower sides of the glass substrate 102, the through electrode 108 is formed to cover all the side walls in the through hole 10 of the glass substrate 102, and a hollow circle is formed along the inner wall of the through hole 10. It is formed in a columnar shape. The hollow portion of the through electrode 108 may be referred to as a through hole 130. Further, since the through electrode 108 is electrically connected to the upper and lower wirings, the land 108-1 (from the diameter of the through hole) is formed on the peripheral portion of the through hole 130 on the first surface 102a to the second surface 102b of the glass substrate 102. May also have a large "land" portion). The material of the through electrode 108 may be, for example, copper or nickel.

As shown in FIG. 2, the through holes 10 and the through holes 130 may be concentric circles having the same central axis. The hole diameter of the through hole 10 may be, for example, about 40 μm to 140 μm, and the hole diameter of the through hole 130 may be, for example, about 30 μm to 135 μm. In the wiring substrate shown in FIG. 2, the hole diameter of the through hole 10 is larger than the hole diameter of the through hole 130.

Although the hollow through hole 130 is shown in FIG. 2, the inside of the through hole 130 may be filled with the same plating as the through electrode 108, or may be filled with an organic resin or a metal different from the through electrode 108. It is also good.

On the first surface 102 a of the glass substrate 102, a second wiring 110 in contact with the glass substrate 102, the first wiring 104, and the through electrode 108 is formed. The second wiring 110 has a function as a bridge wiring which electrically connects the first wiring 104 and the land 108-1 on the first surface 102a of the through electrode 108. The material of the second wiring 110 may be any material having conductivity, such as copper, nickel, or tin.

The second wire 110 may be a single layer as shown in FIG. 2, but the present disclosure is not limited thereto. For example, when the material of the second wiring 110 is copper, in order to improve the adhesion between copper and the glass substrate 102, an adhesion layer made of a metal film of low resistance such as Ti is interposed between the copper and the glass substrate 102. It may be a multilayer structure including one or more layers.

FIG. 10 is a cross-sectional view of a through electrode substrate according to an embodiment of the present disclosure. The second wiring 110 ′ shown in FIG. 10 includes an adhesion layer 110-1 formed of a metal film of low resistance such as Ti formed on the glass substrate 102, and a conductor such as copper formed on the adhesion layer 110-1. It has a two-layer structure in which a second wiring portion 110-2 made of a material having elasticity is laminated. According to the configuration shown in FIG. 10, the adhesion between the second wiring portion 110-2 of the second wiring 110 'and the glass substrate 102 can be improved. Further, although not shown, the adhesion layer 110-1 of the second wiring 110 'shown in FIG. 10 may have a multilayer structure made of two or more low resistance metal films.

Also, as long as the second wiring 110 is a wiring which can bridge and electrically connect the first wiring 104 and the through electrode 108 which are formed separately on one main surface of the glass substrate 102. It may be For example, the second wiring 110 may be wire bonding that electrically connects the first wiring 104 and the through electrode 108, and solder that electrically connects the first wiring 104 and the through electrode 108. It may be. The material of the second wiring 110 may be, for example, a metal oxide such as nickel, gold, tin, copper, aluminum, titanium, chromium, or ITO.

As shown in FIG. 2, a plurality of second wires 110 may be connected to one through electrode 108 so as to be drawn out in different directions. However, the present disclosure is not limited to this. FIG. 11 is a top view of a through electrode substrate according to an embodiment of the present disclosure. As shown in FIG. 11, only one second wiring 110 may be connected to one through electrode 108 and electrically connected to the first wiring 104.

The first wiring 104, the second wiring 110, and the through electrode 108 are formed of a conductive material. For example, gold, silver, copper, platinum, nickel, rhodium, ruthenium, or iridium can be used. The first wire 104, the second wire 110, and the through electrode 108 may use the same material, or may use different materials in combination. Characteristic impedance matching can be improved by forming the first wiring 104, the second wiring 110, and the through electrode 108 using the same material.

In the present embodiment, since the through electrode 108 and the first wire 104 are electrically connected by the second wire 110, the conduction between the through electrode 108 and the first wire 104 on the glass substrate 102 is ensured. Electrical reliability is improved.

[Modification of Structure 1 of Wiring Board]
In the example shown in FIG. 2, the second wiring 110 is directly connected to the land 108-1 on the first surface 102a of the through electrode 108, but the present disclosure is not limited to this. FIG. 9 is a view showing a modification of the through electrode substrate according to the embodiment of the present disclosure shown in FIG. FIG. 9A is a top view of a through electrode substrate according to an embodiment of the present disclosure. FIG. 9B is a cross-sectional view taken along the section line shown in FIG.

As shown in FIG. 9, the through electrode 108 may have a wiring portion 108-2 extending from the land 108-1 formed on the first surface 102a. In this case, the second wire 110 may be directly connected to the wire portion 108-2 extending from the land 108-1 formed on the first surface 102a of the through electrode 108.

[Method 1 of manufacturing wiring board]
A method of manufacturing the through electrode substrate 100 according to the first embodiment of the present disclosure shown in FIG. 2 will be described with reference to FIGS. 2 to 6. In FIGS. 3 to 6, the same components as those in FIGS. 1 to 2 will be described with the same reference numerals.

First, the first wiring 104 is formed on the glass substrate 102 (see FIG. 3). The first wiring 104 may constitute an element such as a TFT. Although the first wiring 104 is formed on the first surface 102 a of the glass substrate 102 in FIG. 3, the present invention is not limited to this, and the first wiring is not only limited to the first surface 102 a but also to the second surface 102 b. 104 may be formed.

Next, a through hole 10 penetrating the first surface 102a and the second surface 102b is formed in the glass substrate 102 having the first wiring 104 formed on one side or both sides (see FIG. 4). The position where the through hole 10 is formed in the glass substrate 102 is a portion where the first wiring 104 is not formed. The through hole 10 is formed at a position separated from the first wiring 104. The shape of the through hole 10 may be a cylindrical shape in which the upper and lower hole diameters are substantially constant.

The method of forming the through holes 10 in the glass substrate 102 may be any method.

Next, the adhesion layer 106 is formed on the inner wall of the through hole 10 formed in the glass substrate 102 and the peripheral portion of the through hole on the first surface 102 a and the second surface 102 b (see FIG. 5). The adhesion layer 106 may be formed by a method such as spin coating, dip coating, spray coating, or the like. The adhesion layer 106 functions as an adhesion layer for forming a through electrode material thereafter. The adhesion layer 106 may be formed of a material containing an organic resin.

Next, the through electrode 108 is formed on a portion of the surface of the glass substrate 102 where the adhesion layer 106 is formed (see FIG. 6). The through electrode 108 is formed on the adhesion layer 106 formed on the surface of the glass substrate 102. The through electrode 108 is formed by coating copper or nickel using an electroless plating method.

Here, in the case of manufacturing the modified example of the structure 1 of the wiring substrate shown in FIG. 9, the wiring portion 108-2 extending from the land 108-1 formed on the first surface 102a of the through electrode 108 is also penetrated It may be formed at the same time as the electrode 108 in the above process. Specifically, the through electrode 108 including the land 108-1 and the wiring portion 108-2 extending from the land 108-1 is formed on the surface of the glass substrate 102 where the adhesion layer 106 is formed (FIG. 9). See). The through electrode 108 is formed on the adhesion layer 106 formed on the surface of the glass substrate 102. The through electrode 108 is formed by coating copper or nickel using an electroless plating method.

In the present disclosure, by using the adhesion layer 106 as the adhesion layer or the reducing agent, it is possible to form a through electrode material in the through holes 10 formed on the glass substrate 102 by the electroless plating method or the like.

Unlike the present disclosure, there is also a method of forming a through electrode material such as copper in the through holes 10 formed on the glass substrate 102 without forming the adhesion layer 106 by a sputtering method.

If the aspect ratio of the through holes in the glass substrate is low (for example, if the plate thickness is small or the hole diameter is large), even if a method of forming an electrode material such as copper in the through holes by sputtering is used. It is possible to form through electrodes.

The aspect ratio is a value of plate thickness / hole diameter, and the relationship between the plate thickness of the glass substrate 102 and the hole diameter of the through hole of the glass substrate 102 is expressed by the aspect ratio of the through hole of the glass substrate. For example, when the plate thickness is large or the hole diameter is small, the aspect ratio is high, and when the plate thickness is small or the hole diameter is large, the aspect ratio is small.

However, when the aspect ratio of the through holes in the glass substrate is high (for example, when the plate thickness is large or the hole diameter is small), the sputtering method is sufficient for the electrode material to reach the inside of the through holes far from the main surface of the glass substrate. Since film formation can not be performed, a blank portion (void or soot) in which the electrode material is not formed is likely to be generated inside the through hole, and there is a problem in electrical reliability. For example, when the aspect ratio of the through holes of the glass substrate is 3 or more, in the sputtering method, voids or soot are easily generated in the through holes, and a problem occurs in the electrical reliability.

In the present disclosure, even if the aspect ratio of the through hole 10 formed in the glass substrate 102 is high by using the adhesion layer 106 as the adhesion layer or reducing agent, the penetration hole 10 is penetrated by the electroless plating method or the like. The electrode material can be sufficiently deposited. Therefore, the present disclosure is advantageous in that the electrical reliability can be further improved, particularly in a wiring substrate in a high density arrangement in which the aspect ratio of the through holes 10 formed in the glass substrate 102 is 3 or more.

Next, in order to electrically connect the first wiring 104 formed on the glass substrate 102 and the through electrode 108 formed at a position separated from the first wiring 104, the first wiring 104 and the glass substrate 102 are connected. A second wiring 110 is formed in contact with the through electrode 108 (see FIG. 2). In FIG. 2, the second wiring 110 is a wiring formed to be in contact with the first surface 102 a of the glass substrate by sputtering or the like, but the present disclosure is not limited to this.

As described above, in order to form the through electrode 108 by performing electroless copper plating on the glass substrate 102, the adhesion layer 106 needs to be formed on the glass substrate 102 as an adhesion layer. Further, by forming the through electrode 108 only via the adhesion layer 106, it is not possible to obtain conduction between the through electrode 108 and a wiring layer such as the first wiring 104 formed in advance on the glass substrate 102. Therefore, in the present disclosure, in order to obtain conduction between a wiring layer such as the first wiring 104 formed in advance on the glass substrate 102 and the through electrode 108 formed via the adhesion layer 106, 2 wiring 110 is provided.

In the present disclosure, since the second wiring 110 electrically connects the first wiring 104 and the through electrode 108 which are formed apart on one main surface of the glass substrate 102 as the bridge wiring, the through electrode 108 and the first wiring 104 are separated. Electrical connection with the first wiring 104 can be secured, and a through electrode substrate with improved electrical reliability can be provided.

Further, as shown in FIG. 2, the second wiring 110 may be a wiring formed to be in contact with the first surface 102 a of the glass substrate by a sputtering method or the like. In this case, the second wiring 110 is disposed so as to be in direct contact with (not isolated from) one main surface of the glass substrate 102, and is directly in contact with the same surface. The adhesion layer 106 intervenes between the glass substrate 102 and the glass substrate 102). Specifically, in FIG. 2, the first wiring 104 in direct contact with the first surface 102 a of the glass substrate and the land 108-1 on the first surface 102 a of the through electrode 108 are on the first surface 102 a of the glass substrate It is electrically connected by the 2nd wiring 110 which touches directly.

According to the structure of the second wiring 110 shown in FIG. 2, the first wiring 104 in direct contact with the first surface 102a of the glass substrate and the land 108-1 of the through electrode 108 are in direct contact with the first surface 102a of the glass substrate. Since the second wiring 110 is electrically connected, the wiring density in the layer directly in contact with the first surface 102 a of the glass substrate on which the first wiring 104 and the land 108-1 of the through electrode 108 are formed is It can be enhanced. As described above, if the wiring density in the layer directly in contact with the first surface 102 a of the glass substrate is increased, the wiring formation to other layers becomes easier, and the design freedom of the wiring is increased.

Further, since the first wiring 104 and the land 108-1 of the through electrode 108 are connected in the same layer in direct contact with the first surface 102a of the glass substrate, the wiring length of the second wiring 110 can be shortened. Therefore, the resistance is low and current can flow stably. In addition, since the second wiring 110 is in direct contact with the same surface as the first wiring 104 and the land 108-1 of the through electrode 108, the height of the wiring layer can be reduced. Furthermore, when another wiring is stacked on the wiring layer via the insulating layer, the flatness of the lower wiring layer can be secured.

In addition, since the first wiring 104, the land 108-1 of the through electrode 108, and the second wiring 110 are formed with the first surface 102a of the same glass substrate as a base, the thermal expansion of the first surface 102a of the glass substrate Since the stress due to the stress uniformly applies to each of the first wiring 104, the through electrode 108, and the second wiring 110, distortion and disconnection of the wiring are less likely to occur, and connection reliability is enhanced.

[Structure 2 of wiring board]
As a second configuration of the wiring substrate, a through electrode substrate according to another embodiment of the present disclosure will be described with reference to FIGS. 7 and 8. In addition, about the same structure as FIG.1 and FIG.2, the same code | symbol is attached | subjected and demonstrated.

A through electrode substrate 100 ′ shown in FIG. 7 includes a glass substrate 102 constituting the through electrode substrate 100 shown in FIG. 2, a first through electrode 108 a, a first wire 104, and a second wire 110. The through electrode substrate 100 ′ shown in FIG. 7 further has an insulating layer 112, and on the insulating layer 112, a third wiring 114 that constitutes a wiring layer above the first wiring 104. The insulating layer 112 has an opening 20 on the first through electrode 108 a, and the second through electrode 108 b is formed on the inner wall of the opening 20. The second through electrode 108 b and the third wiring 114 are configured to be bridged by the fourth wiring 116 on the insulating layer 112.

The insulating layer 112 is provided so as to cover the first wiring 104, the second wiring 110, and the first through electrode 108 on the first surface 102 a of the glass substrate 102. The insulating layer 112 is an insulating layer formed of an organic resin material, and is an interlayer insulating layer for laminating another wiring layer formed of the third wiring layer 114 on the wiring layer formed of the first wiring 104. It functions as a membrane.

The insulating layer 112 has an opening 20 at a position overlapping the through hole 10 in which the first through electrode 108 a is formed, and the second through electrode 108 b is formed on the inner wall of the opening 20 of the insulating layer 112. There is.

The second through electrode 108b is formed in the opening 20 of the insulating layer 112 made of an organic resin material, and therefore, unlike the first through electrode 108a, it is not necessary to interpose an adhesion layer. Therefore, the second through electrode 108 b can be formed directly on the surface of the insulating layer 112 by a method such as electroless copper plating.

The second through electrode 108 b electrically connects the third wire 114 formed in the upper layer to the first through electrode 108 a, and the third wire 114 and the second wire 114 formed on the first surface 102 a of the glass substrate 102. It functions to obtain upper and lower conduction with other interconnections and the like formed on the surface 102b.

The second through electrode 108 b and the third wire are formed at spaced positions on the insulating layer 112, and the fourth wire 116 bridges the second through electrode 108 b and the third wire on the insulating layer 112. Electrically connect in the same layer.

In the through electrode substrate 100 ′ shown in FIG. 7, the wiring layer including the first wiring 104 and the wiring layer including the third wiring are stacked on the first surface 102 a of the glass substrate 102. In the included wiring layer, the first through electrode 108a and the first wiring 104 in direct contact with the first surface 102a of the glass substrate 102 are bridged in the same layer by the second wiring 110 in direct contact with the first surface 102a of the glass substrate 102. Configuration. Furthermore, in the wiring layer including the third wiring 114, the second through electrode 108b in direct contact with the upper surface of the insulating layer 112 and the third wiring 114 are bridged in the same layer by the fourth wiring 116 in direct contact with the upper surface of the insulating layer 112. Configuration. The other configuration is the same as that of the through electrode substrate 100 shown in FIGS. 1 and 2.

In FIG. 7, two layers of the wiring layer including the first wiring 104 and the wiring layer including the third wiring are stacked on the first surface 102 a of the glass substrate 102, but the present disclosure is limited thereto Instead, three or more wiring layers may be stacked.

In addition, as shown in FIG. 7, the through electrode substrate 100 ′ includes a third through electrode 108 c which vertically conducts the third wiring 114 and another wiring or the like formed on the second surface 102 b of the glass substrate 102. You may provide further. As shown in FIG. 7, an insulating layer 112 may be formed between the third through electrode 108 c and the glass substrate 102. As a method of manufacturing the insulating layer 112, for example, the insulating layer 112 may be formed by a method in which an insulating liquid resist film is coated on the surface of the glass substrate 102 using a roller coater. In addition, the insulating layer 112 may be formed using a dip coater or a spray coater.

FIG. 8 is a top view of the through electrode substrate shown in FIG. In FIG. 8, the wiring and the through electrode on the uppermost surface are indicated by a solid line, and the wiring and the through electrode positioned in the lower layer are indicated by a broken line as a transparent view. As shown in FIGS. 7 and 8, the plurality of first through electrodes 108 a are connected to one another by the wiring layer including the first wiring 104, and the second through electrode 108 b is a third wiring that is the upper layer of the first wiring 104. It is connected to the third through electrode 108 c which is another through electrode by the wiring layer including 114.

In the present disclosure, since the fourth wire 116 bridges and connects the third wire 114 and the second through electrode 108 b which are separately formed on the insulating layer 112 in the same layer, the second through electrode 108 b and the second through electrode 108 b are separated. Electrical connection with the three wires 114 is ensured, and a through electrode substrate 100 'with improved electrical reliability can be provided.

As shown in FIGS. 7 and 8, the second through electrode 108b forms a land 108b-1 at the periphery of the through hole 130b which is a hollow portion, and this land electrically connects the other wiring and the through electrode. Function as a connection part that connects Also, the first through electrode 108a and the third through electrode 108c may also have lands at the peripheral edge of the through hole, as with the second through electrode 108b.

According to the through electrode substrate 100 'having a plurality of wiring layers shown in FIG. 7 and FIG. 8, the wiring density can be further improved by laminating the wiring layers while securing the electrical reliability.

The embodiments described above as the embodiments of the present disclosure can be implemented in combination as appropriate as long as they do not contradict each other. In addition, those to which a person skilled in the art appropriately adds, deletes, or changes the design of components based on each embodiment are also included in the scope of the present disclosure as long as they include the gist of the present disclosure.

In addition, even if other functions and effects different from the functions and effects provided by the above-described embodiments are apparent from the description of the present specification or those that can be easily predicted by those skilled in the art, it is natural. It is understood that the present disclosure results.

100, 100 ': through electrode substrate, 102: glass substrate, 102a: first surface, 102b: second surface, 104: first wiring, 10: through hole, 108, 108a, 108b: through electrode, 110: second Wiring, 106: adhesion layer, 112: insulating layer, 114: third wiring, 116: fourth wiring, 20: opening

Claims

A substrate made of an inorganic material,
A first wire provided on the substrate;
A through hole provided in the substrate at a position separated from the first wiring;
A through electrode provided on the inner wall of the through hole;
A second wire connecting the first wire and the through electrode;
Through electrode substrate.
The penetration electrode substrate according to claim 1, further comprising an adhesion layer provided between the substrate and the penetration electrode.
The through electrode substrate according to claim 2, wherein the second wiring further contacts the adhesion layer.
The through electrode substrate according to claim 2, wherein the adhesion layer contains an organic resin material.
An insulating layer provided on the first wiring, the second wiring, and the through electrode;
A third wire provided on the insulating layer;
The penetration electrode substrate according to any one of claims 1 to 4, further comprising: a fourth interconnection in contact with the insulating layer, the third interconnection, and the penetration electrode.
The insulating layer is made of an organic resin material,
The through electrode substrate according to claim 5, wherein the through electrode is provided on an inner wall of the through hole and an opening provided in the insulating layer.
The said penetration electrode is a 1st penetration electrode provided in the inner wall of the said penetration hole, and the 2nd penetration electrode provided in the inside of the said opening provided in the said insulating layer. Through electrode substrate.
The through electrode substrate according to any one of claims 1 to 4, wherein an aspect ratio of the through hole is 3 or more.
The semiconductor device using the penetration electrode substrate according to any one of claims 1 to 4.